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Das A, Yadav RK. Electronic and vibrational properties of pristine and Cd, Si, Zn and Ge-doped InN nanosheet: a first principle study. Struct Chem 2020. [DOI: 10.1007/s11224-020-01632-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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2
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Ra YH, Lee CR. Core-Shell Tunnel Junction Nanowire White-Light-Emitting Diode. NANO LETTERS 2020; 20:4162-4168. [PMID: 32105489 DOI: 10.1021/acs.nanolett.0c00420] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We have demonstrated a new class of phosphor-free white LEDs with the use of tunnel junction structure in nonpolar core-shell InGaN nanowires. It is confirmed that the tunnel junction based nanowire LEDs can eliminate the use of the resistive p-GaN:Mg contact layer, leading to significantly enhanced hole injection and dramatically reduced voltage loss. The nonpolar core-shell nanowire heterostructure showed the enhanced carrier injection efficiency through the widened shell n-GaN contact area. The TEM analysis verified that the core-shell Al tunnel junction layers were uniformly grown on nonpolar surfaces of the GaN wurtzite crystal nanowire structure. We have also showed the monolithic integration of multiple-color emission on a single chip by using the multiple-stacked tunnel junction core-shell nanowire heterostructure. Compared to the conventional film based quantum well LEDs, the demonstrated nonpolar core-shell tunnel junction nanowire LEDs will be a very promising candidate for future solid-state lighting applications as well as phosphor-free white LEDs.
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Affiliation(s)
- Yong-Ho Ra
- Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology, Jinju 52851, Republic of Korea
| | - Cheul-Ro Lee
- School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Deokjin-dong 664-14, Jeonju 54896, Republic of Korea
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3
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Velpula RT, Jain B, Philip MR, Nguyen HD, Wang R, Nguyen HPT. Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum. Sci Rep 2020; 10:2547. [PMID: 32054926 PMCID: PMC7018839 DOI: 10.1038/s41598-020-59442-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2019] [Accepted: 01/17/2020] [Indexed: 11/09/2022] Open
Abstract
We report the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the ultraviolet wavelength range. During epitaxial growth of the AlInN layer, an AlInN shell is spontaneously formed, resulting in reduced nonradiative recombination on the nanowire surface. The AlInN nanowires exhibit a high internal quantum efficiency of ~52% at room temperature for emission at 295 nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth conditions. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded, which is ~4 times stronger than the transverse electric (TE) polarized light at 295 nm. This study provides an alternative approach for the fabrication of new types of high-performance ultraviolet light emitters.
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Affiliation(s)
- Ravi Teja Velpula
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Barsha Jain
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Moab Rajan Philip
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Hoang Duy Nguyen
- Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City, 700000, Vietnam.
| | - Renjie Wang
- Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7, Canada
| | - Hieu Pham Trung Nguyen
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
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4
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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. MICROMACHINES 2020; 11:mi11020125. [PMID: 31979274 PMCID: PMC7074201 DOI: 10.3390/mi11020125] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Revised: 01/19/2020] [Accepted: 01/22/2020] [Indexed: 12/12/2022]
Abstract
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
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5
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Photoluminescence Characteristics of Zinc Blende InAs Nanowires. Sci Rep 2019; 9:17665. [PMID: 31776377 PMCID: PMC6881312 DOI: 10.1038/s41598-019-54047-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2019] [Accepted: 10/18/2019] [Indexed: 11/24/2022] Open
Abstract
A detailed understanding of the optical properties of self-catalysed (SC), zinc blende (ZB) dominant, nanowires (NWs) is crucial for the development of functional and impurity-free nanodevices. Despite the fact that SC InAs NWs mostly crystallize in the WZ/ZB phase, there are very limited reports on the photoluminescence (PL) properties of ZB InAs NWs. Here, we report on the PL properties of Molecular Beam Epitaxy grown, SC InAs NWs. The as-grown NWs exhibit a dominant band to band (BtB) peak associated with ZB, InAs with an emission energy of ~0.41 eV in good agreement with the band gap energy of ZB InAs and significantly lower than that of the wurtzite phase (~0.48 eV). The strong BtB peak persists to near room temperature with a distinct temperature-dependent red-shift and very narrow spectral linewidth of ~20 meV (10 K) which is much smaller than previously reported values. A narrowing in PL linewidth with increasing NWs diameter is correlated with a decline in the influence of surface defects resulting from an enlargement in NWs diameter. This study demonstrates the high optical property of SC InAs NWs which is compatible with the Si-complementary metal-oxide-semiconductor technology and paves the way for the monolithic integration of InAs NWs with Si in novel nanodevices.
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6
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Casallas-Moreno YL, Gallardo-Hernández S, Yee-Rendón CM, Ramírez-López M, Guillén-Cervantes A, Arias-Cerón JS, Huerta-Ruelas J, Santoyo-Salazar J, Mendoza-Álvarez JG, López-López M. Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE. MATERIALS 2019; 12:ma12193203. [PMID: 31574912 PMCID: PMC6804043 DOI: 10.3390/ma12193203] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Revised: 09/14/2019] [Accepted: 09/20/2019] [Indexed: 11/16/2022]
Abstract
Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400 ∘ C of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.72 eV at 20 K for the InN nanocolumns, confirmed by photoreflectance spectroscopy.
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Affiliation(s)
- Y L Casallas-Moreno
- Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Av. IPN 2580, Gustavo A. Madero, Ciudad de México 07340, Mexico.
| | - S Gallardo-Hernández
- Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
| | - C M Yee-Rendón
- Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, Av. de las Américas y Blvd. Universitarios, Culiacán, Sinaloa 80000, Mexico
| | - M Ramírez-López
- Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Av. IPN 2580, Gustavo A. Madero, Ciudad de México 07340, Mexico
| | - A Guillén-Cervantes
- Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
| | - J S Arias-Cerón
- Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
| | - J Huerta-Ruelas
- Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Cerro Blanco 141, Querétaro C.P. 76090, Mexico
| | - J Santoyo-Salazar
- Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
| | - J G Mendoza-Álvarez
- Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
| | - M López-López
- Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Apartado Postal 14-740, Ciudad de México 07360, Mexico
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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8
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Chen D, Zhang X, Tang J, Cui Z, Cui H. Pristine and Cu decorated hexagonal InN monolayer, a promising candidate to detect and scavenge SF 6 decompositions based on first-principle study. JOURNAL OF HAZARDOUS MATERIALS 2019; 363:346-357. [PMID: 30321839 DOI: 10.1016/j.jhazmat.2018.10.006] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 09/30/2018] [Accepted: 10/01/2018] [Indexed: 05/28/2023]
Abstract
We carried out the first-principle study of four types of SF6 decompositions adsorbed on pristine and Cu atom decorated hexagonal InN monolayer. The adsorption structures, adsorption energy, electron transfer, band structure, density of states and desorption properties were discussed to evaluate the possible application of InN monolayer in field of adsorbent and gas sensor. The results revealed that the pristine InN monolayer has the largest adsorption energy to SO2 with evident chemical interactions. The introduction of Cu adatom on InN monolayer significantly enhanced the chemical interactions between the InN monolayer and the SO2, SOF2, SO2F2 gas molecule but declined the adsorption energy of HF. We also investigated the electronic properties of all adsorption configurations and estimated the desorption time of every gas molecule from pristine and Cu decorated InN monolayer to evaluate the potential application in noxious gas detecting and scavenging in gas insulated switch-gear (GIS).
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Affiliation(s)
- Dachang Chen
- School of Electrical Engineering, Wuhan University, Wuhan 430072, China
| | - Xiaoxing Zhang
- School of Electrical Engineering, Wuhan University, Wuhan 430072, China; State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Ju Tang
- School of Electrical Engineering, Wuhan University, Wuhan 430072, China
| | - Zhaolun Cui
- School of Electrical Engineering, Wuhan University, Wuhan 430072, China
| | - Hao Cui
- State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China
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9
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Song W, Si J, Wu S, Hu Z, Long L, Li T, Gao X, Zhang L, Zhu W, Wang L. Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition. CrystEngComm 2019. [DOI: 10.1039/c9ce00975b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
InN can form ternary alloys with Ga or Al, which increases the versatility of group-III nitride optoelectronic devices.
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10
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Askari S, Mariotti D, Stehr JE, Benedikt J, Keraudy J, Helmersson U. Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN. NANO LETTERS 2018; 18:5681-5687. [PMID: 30137994 DOI: 10.1021/acs.nanolett.8b02260] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1- x, 0.017 < x < 0.085) in highly degenerate NCs using a nonequilibrium gas-phase growth process. Despite the significant reduction in the carrier mobility relative to intrinsic InN, the mobility in degenerate InN NCs (>60 cm2/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III-V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications.
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Affiliation(s)
- Sadegh Askari
- Department of Physics , Linköping University , SE-581 83 Linköping , Sweden
- Institute for Experimental and Applied Physics , Christian-Albrechts-Universität zu Kiel , Leibnizstraße 17 , 24118 Kiel , Germany
| | - Davide Mariotti
- Nanotechnology & Integrated Bioengineering Centre (NIBEC) , Ulster University , BT37 0QB , Northern Ireland , United Kingdom
| | - Jan Eric Stehr
- Department of Physics , Linköping University , SE-581 83 Linköping , Sweden
| | - Jan Benedikt
- Institute for Experimental and Applied Physics , Christian-Albrechts-Universität zu Kiel , Leibnizstraße 17 , 24118 Kiel , Germany
| | - Julien Keraudy
- Department of Physics , Linköping University , SE-581 83 Linköping , Sweden
| | - Ulf Helmersson
- Department of Physics , Linköping University , SE-581 83 Linköping , Sweden
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11
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Madapu KK, Sivadasan AK, Baral M, Dhara S. Observation of surface plasmon polaritons in 2D electron gas of surface electron accumulation in InN nanostructures. NANOTECHNOLOGY 2018; 29:275707. [PMID: 29658895 DOI: 10.1088/1361-6528/aabe60] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recently, heavily doped semiconductors have been emerging as an alternative to low-loss plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property of surface electron accumulation (SEA), which provides a 2D electron gas (2DEG) system. In this report, we demonstrated the surface plasmon properties of InN nanoparticles originating from SEA using the real-space mapping of the surface plasmon fields for the first time. The SEA is confirmed by Raman studies, which are further corroborated by photoluminescence and photoemission spectroscopic studies. The frequency of 2DEG corresponding to SEA is found to be in the THz region. The periodic fringes are observed in the near-field scanning optical microscopic images of InN nanostructures. The observed fringes are attributed to the interference of propagated and back-reflected surface plasmon polaritons (SPPs). The observation of SPPs is solely attributed to the 2DEG corresponding to the SEA of InN. In addition, a resonance kind of behavior with the enhancement of the near-field intensity is observed in the near-field images of InN nanostructures. Observation of SPPs indicates that InN with SEA can be a promising THz plasmonic material for light confinement.
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Affiliation(s)
- Kishore K Madapu
- Nanomaterials Characterization and Sensors Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam-603102, India
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12
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He Y, Fishman ZS, Yang KR, Ortiz B, Liu C, Goldsamt J, Batista VS, Pfefferle LD. Hydrophobic CuO Nanosheets Functionalized with Organic Adsorbates. J Am Chem Soc 2018; 140:1824-1833. [PMID: 29298055 DOI: 10.1021/jacs.7b11654] [Citation(s) in RCA: 40] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
A new class of hydrophobic CuO nanosheets is introduced by functionalization of the cupric oxide surface with p-xylene, toluene, hexane, methylcyclohexane, and chlorobenzene. The resulting nanosheets exhibit a wide range of contact angles from 146° (p-xylene) to 27° (chlorobenzene) due to significant changes in surface composition induced by functionalization, as revealed by XPS and ATR-FTIR spectroscopies and computational modeling. Aromatic adsorbates are stable even up to 250-350 °C since they covalently bind to the surface as alkoxides, upon reaction with the surface as shown by DFT calculations and FTIR and 1H NMR spectroscopy. The resulting hydrophobicity correlates with H2 temperature-programmed reduction (H2-TPR) stability, which therefore provides a practical gauge of hydrophobicity.
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Affiliation(s)
- Yulian He
- Department of Chemical & Environmental Engineering, Yale University , New Haven, Connecticut 06520-8286, United States
| | - Zachary S Fishman
- Department of Chemical & Environmental Engineering, Yale University , New Haven, Connecticut 06520-8286, United States
| | - Ke R Yang
- Department of Chemistry, Yale University , New Haven, Connecticut 06520-8107, United States.,Energy Science Institute, Yale University , West Haven, Connecticut 06516-7394, United States
| | - Brandon Ortiz
- Department of Chemical & Environmental Engineering, Yale University , New Haven, Connecticut 06520-8286, United States
| | - Chaolun Liu
- Department of Chemistry, University of Hawaii at Manoa , Honolulu, Hawaii 96816, United States
| | - Julia Goldsamt
- Great Neck North High School , Great Neck, New York 11023, United States
| | - Victor S Batista
- Department of Chemistry, Yale University , New Haven, Connecticut 06520-8107, United States.,Energy Science Institute, Yale University , West Haven, Connecticut 06516-7394, United States
| | - Lisa D Pfefferle
- Department of Chemical & Environmental Engineering, Yale University , New Haven, Connecticut 06520-8286, United States
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Bolshakov AD, Mozharov AM, Sapunov GA, Shtrom IV, Sibirev NV, Fedorov VV, Ubyivovk EV, Tchernycheva M, Cirlin GE, Mukhin IS. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:146-154. [PMID: 29441260 PMCID: PMC5789400 DOI: 10.3762/bjnano.9.17] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Accepted: 11/14/2017] [Indexed: 06/08/2023]
Abstract
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm-3.
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Affiliation(s)
- Alexey D Bolshakov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
| | - Alexey M Mozharov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Georgiy A Sapunov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Igor V Shtrom
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Nickolay V Sibirev
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
| | - Vladimir V Fedorov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Evgeniy V Ubyivovk
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Maria Tchernycheva
- Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France
| | - George E Cirlin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Ivan S Mukhin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
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15
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Wang X, Zhang GZ, Xu Y, Gan XW, Chen C, Wang Z, Wang Y, Wang JL, Wang T, Wu H, Liu C. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers. NANOSCALE RESEARCH LETTERS 2016; 11:21. [PMID: 26759357 PMCID: PMC4710628 DOI: 10.1186/s11671-016-1232-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/26/2015] [Accepted: 01/05/2016] [Indexed: 06/05/2023]
Abstract
InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10(-9) A/cm(2) at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.
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Affiliation(s)
- X Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - G Z Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - Y Xu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - X W Gan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - C Chen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - Z Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - Y Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - J L Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - T Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China
| | - H Wu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.
| | - C Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.
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16
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Tessarek C, Fladischer S, Dieker C, Sarau G, Hoffmann B, Bashouti M, Göbelt M, Heilmann M, Latzel M, Butzen E, Figge S, Gust A, Höflich K, Feichtner T, Büchele M, Schwarzburg K, Spiecker E, Christiansen S. Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy. NANO LETTERS 2016; 16:3415-3425. [PMID: 27187840 DOI: 10.1021/acs.nanolett.5b03889] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usually inapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.
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Affiliation(s)
- C Tessarek
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
- Institute of Optics, Information and Photonics, Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Staudtstr. 7/B2, 91058 Erlangen, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - S Fladischer
- Institut für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Cauerstr. 6, 91058 Erlangen, Germany
| | - C Dieker
- Institut für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Cauerstr. 6, 91058 Erlangen, Germany
| | - G Sarau
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - B Hoffmann
- Institute of Optics, Information and Photonics, Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Staudtstr. 7/B2, 91058 Erlangen, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - M Bashouti
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - M Göbelt
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - M Heilmann
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - M Latzel
- Institute of Optics, Information and Photonics, Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Staudtstr. 7/B2, 91058 Erlangen, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - E Butzen
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - S Figge
- Institute of Solid State Physics, University of Bremen , Otto-Hahn-Allee 1, 28359 Bremen, Germany
| | - A Gust
- Institute of Solid State Physics, University of Bremen , Otto-Hahn-Allee 1, 28359 Bremen, Germany
| | - K Höflich
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - T Feichtner
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - M Büchele
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
| | - K Schwarzburg
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
| | - E Spiecker
- Institut für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-University Erlangen-Nürnberg (FAU) , Cauerstr. 6, 91058 Erlangen, Germany
| | - S Christiansen
- Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, 14109 Berlin, Germany
- Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
- Physics Department, Freie Universität Berlin , Arnimallee 14, 14195 Berlin, Germany
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17
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Liu G, Zhao S, Henderson RDE, Leonenko Z, Abdel-Rahman E, Mi Z, Ban D. Nanogenerators based on vertically aligned InN nanowires. NANOSCALE 2016; 8:2097-106. [PMID: 26700694 DOI: 10.1039/c5nr06841j] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Piezoelectric nanogenerators (NGs) based on vertically aligned InN nanowires (NWs) are fabricated, characterized, and evaluated. In these NGs, arrays of p-type and intrinsic InN NWs prepared by plasma-assisted molecular beam epitaxy (MBE) demonstrate similar piezoelectric properties. The p-type NGs show 160% more output current and 70% more output power product than the intrinsic NGs. The features driving performance enhancement are reduced electrostatic losses due to better NW array morphology, improved electromechanical energy conversion efficiency due to smaller NW diameters, and the higher impedance of intrinsic NGs due to elevated NW surface charge levels. These findings highlight the potential of InN based NGs as a power source for self-powered systems and the importance of NW morphology and surface state in overall NG performance.
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Affiliation(s)
- Guocheng Liu
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L3G1, Canada.
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada
| | - Robert D E Henderson
- Department of Physics & Astronomy, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Zoya Leonenko
- Department of Physics & Astronomy, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Eihab Abdel-Rahman
- Department of Systems Design Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Zetian Mi
- Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada
| | - Dayan Ban
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L3G1, Canada.
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18
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Sadaf SM, Ra YH, Nguyen HPT, Djavid M, Mi Z. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes. NANO LETTERS 2015; 15:6696-701. [PMID: 26384135 DOI: 10.1021/acs.nanolett.5b02515] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.
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Affiliation(s)
- S M Sadaf
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Y-H Ra
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - H P T Nguyen
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - M Djavid
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Z Mi
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
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19
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Fang Z, Robin E, Rozas-Jiménez E, Cros A, Donatini F, Mollard N, Pernot J, Daudin B. Si Donor Incorporation in GaN Nanowires. NANO LETTERS 2015; 15:6794-6801. [PMID: 26426262 DOI: 10.1021/acs.nanolett.5b02634] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs.
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Affiliation(s)
- Zhihua Fang
- Univ. Grenoble Alpes , F-38000 Grenoble, France
- CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group , F-38000 Grenoble, France
- CNRS, Inst. NEEL , F-38042 Grenoble, France
| | - Eric Robin
- CEA, INAC , MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France
| | - Elena Rozas-Jiménez
- Materials Science Institute, University of Valencia , ES-46071 Valencia, Spain
| | - Ana Cros
- Materials Science Institute, University of Valencia , ES-46071 Valencia, Spain
| | - Fabrice Donatini
- Univ. Grenoble Alpes , F-38000 Grenoble, France
- CNRS, Inst. NEEL , F-38042 Grenoble, France
| | - Nicolas Mollard
- CEA, INAC , MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France
| | - Julien Pernot
- Univ. Grenoble Alpes , F-38000 Grenoble, France
- CNRS, Inst. NEEL , F-38042 Grenoble, France
- Institut Universitaire de France , 103 boulevard Saint-Michel, F-75005 Paris, France
| | - Bruno Daudin
- Univ. Grenoble Alpes , F-38000 Grenoble, France
- CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group , F-38000 Grenoble, France
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20
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Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping. NANOSCALE 2015; 7:11692-11701. [PMID: 26100114 DOI: 10.1039/c5nr00623f] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.
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Affiliation(s)
- M Tchernycheva
- Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, 91405 Orsay cedex, France.
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21
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Zhang Y, Sanchez AM, Wu J, Aagesen M, Holm JV, Beanland R, Ward T, Liu H. Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires. NANO LETTERS 2015; 15:3128-3133. [PMID: 25822399 DOI: 10.1021/acs.nanolett.5b00188] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A quasi-3-fold composition symmetry has for the first time been observed in self-catalyzed III-V-V core-shell nanowires. In GaAsP nanowires, phosphorus-rich sheets on radial {110} planes originating at the corners of the hexagonal core were observed. In a cross section, they appear as six radial P-rich bands that originate at the six outer corners of the hexagonal core, with three of them higher in P content along ⟨112⟩A direction and others along ⟨112⟩B, forming a quasi-3-fold composition symmetry. We propose that these P-rich bands are caused by a curvature-induced high surface chemical potential at the small corner facets, which drives As adatoms away more efficiently than P adatoms. Moreover, their polarity related P content difference can be explained by the different adatom bonding energies at these polar corner facets. These results provide important information on the further development of shell growth in the self-catalyzed core-shell NW structure and, hence, device structure for multicomponent material systems.
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Affiliation(s)
- Yunyan Zhang
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Ana M Sanchez
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Jiang Wu
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Martin Aagesen
- §Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark
| | - Jeppe V Holm
- §Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark
- ∥Center for Quantum Devices, Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
| | - Richard Beanland
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Thomas Ward
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Huiyun Liu
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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22
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Zhao S, Connie AT, Dastjerdi MHT, Kong XH, Wang Q, Djavid M, Sadaf S, Liu XD, Shih I, Guo H, Mi Z. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Sci Rep 2015; 5:8332. [PMID: 25684335 PMCID: PMC4329565 DOI: 10.1038/srep08332] [Citation(s) in RCA: 158] [Impact Index Per Article: 17.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2014] [Accepted: 01/05/2015] [Indexed: 12/24/2022] Open
Abstract
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated.
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Affiliation(s)
- S Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - A T Connie
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - M H T Dastjerdi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - X H Kong
- Department of Physics, McGill University, 3600 University Street, Montreal, Quebec, Canada H3A 2T8
| | - Q Wang
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - M Djavid
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - S Sadaf
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - X D Liu
- Facility for Electron Microscopy Research, McGill University, 3640 University Street, Montreal, Quebec H3A 0C7
| | - I Shih
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
| | - H Guo
- Department of Physics, McGill University, 3600 University Street, Montreal, Quebec, Canada H3A 2T8
| | - Z Mi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
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23
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Luna E, Grandal J, Gallardo E, Calleja JM, Sánchez-García MÁ, Calleja E, Trampert A. Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2014; 20:1471-1478. [PMID: 25156830 DOI: 10.1017/s1431927614013038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3-nm thick) around the InN NWs. The shell layer is composed of bcc In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3<110>||InN<1120>.
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Affiliation(s)
- Esperanza Luna
- 1Paul-Drude-Institut für Festkörperelektronik,Hausvogteiplatz 5-7,D-10117 Berlin,Germany
| | - Javier Grandal
- 1Paul-Drude-Institut für Festkörperelektronik,Hausvogteiplatz 5-7,D-10117 Berlin,Germany
| | - Eva Gallardo
- 1Paul-Drude-Institut für Festkörperelektronik,Hausvogteiplatz 5-7,D-10117 Berlin,Germany
| | - José M Calleja
- 2Departamento de Física de Materiales,Universidad Autónoma de Madrid,E-28049 Madrid,Spain
| | - Miguel Á Sánchez-García
- 3ISOM and Departamento Ingeniería Electrónica,ETSI Telecomunicación,Universidad Politécnica de Madrid,E-28040 Madrid,Spain
| | - Enrique Calleja
- 3ISOM and Departamento Ingeniería Electrónica,ETSI Telecomunicación,Universidad Politécnica de Madrid,E-28040 Madrid,Spain
| | - Achim Trampert
- 1Paul-Drude-Institut für Festkörperelektronik,Hausvogteiplatz 5-7,D-10117 Berlin,Germany
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24
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Wang Q, Liu X, Kibria MG, Zhao S, Nguyen HPT, Li KH, Mi Z, Gonzalez T, Andrews MP. p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy. NANOSCALE 2014; 6:9970-9976. [PMID: 25074362 DOI: 10.1039/c4nr01608d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.
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Affiliation(s)
- Q Wang
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada.
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25
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Quddus EB, Wilson A, Webb RA, Koley G. Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature. NANOSCALE 2014; 6:1166-1172. [PMID: 24296526 DOI: 10.1039/c3nr03991a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A novel method for synthesis of high quality InN nanowires, at temperatures well above their decomposition temperature, has been demonstrated by utilizing controlled oxygen flow in the growth chamber. Detailed structural and chemical analyses indicate that the nanowires consist of pure InN, with no evidence of In2O3 detected by any of the characterization methods. It is proposed that the oxygen, pre-adsorbed on the Au catalyst surface, assists in accelerating the decomposition of NH3 at the growth temperature by providing high concentration of atomic nitrogen to assist in the growth, and prevent decomposition of the InN nanowires, without getting incorporated in them. The proposed role of oxygen is supported by improved material quality at higher oxygen flow rates.
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Affiliation(s)
- Ehtesham B Quddus
- Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA.
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26
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Zhao S, Le BH, Liu DP, Liu XD, Kibria MG, Szkopek T, Guo H, Mi Z. p-Type InN nanowires. NANO LETTERS 2013; 13:5509-5513. [PMID: 24090401 DOI: 10.1021/nl4030819] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by "direct" magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.
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Affiliation(s)
- S Zhao
- Department of Electrical and Computer Engineering, McGill University 3480 University Street, Montreal, Quebec H3A 0E9, Canada
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AlOtaibi B, Nguyen HPT, Zhao S, Kibria MG, Fan S, Mi Z. Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode. NANO LETTERS 2013; 13:4356-4361. [PMID: 23927558 DOI: 10.1021/nl402156e] [Citation(s) in RCA: 42] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We report on the first demonstration of stable photoelectrochemical water splitting and hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide), which is achieved by InGaN/GaN core/shell nanowire arrays grown on Si substrate using catalyst-free molecular beam epitaxy. The nanowires are doped n-type using Si to reduce the surface depletion region and increase current conduction. Relatively high incident-photon-to-current-conversion efficiency (up to ~27%) is measured under ultraviolet and visible light irradiation. Under simulated sunlight illumination, steady evolution of molecular hydrogen is further demonstrated.
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Affiliation(s)
- B AlOtaibi
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
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28
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Wang Q, Connie AT, Nguyen HPT, Kibria MG, Zhao S, Sharif S, Shih I, Mi Z. Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa₁-xN nanowire based light emitting diodes. NANOTECHNOLOGY 2013; 24:345201. [PMID: 23899873 DOI: 10.1088/0957-4484/24/34/345201] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of ∼59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.
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Affiliation(s)
- Q Wang
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada
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AlOtaibi B, Harati M, Fan S, Zhao S, Nguyen HPT, Kibria MG, Mi Z. High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode. NANOTECHNOLOGY 2013; 24:175401. [PMID: 23548782 DOI: 10.1088/0957-4484/24/17/175401] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l(-1) solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ~15% and 18% are measured for undoped and Si-doped GaN nanowires under ~350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode.
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Affiliation(s)
- B AlOtaibi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, Canada
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30
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Zhao S, Wang Q, Mi Z, Fathololoumi S, Gonzalez T, Andrews MP. Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study. NANOTECHNOLOGY 2012; 23:415706. [PMID: 23018196 DOI: 10.1088/0957-4484/23/41/415706] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
In this work, photoluminescence and micro-Raman scattering experiments were performed on undoped InN nanowires. It was found that, besides the main photoluminescence peak, a clear phonon sideband emission peak, with an extremely narrow linewidth ~9 meV, was measured. The phonon spectrum revealed by micro-Raman scattering indicates only uncoupled LO phonons are involved in such phonon sideband emission. The clearly resolved phonon sideband emission peak with a narrow linewidth, together with the uncoupled LO phonon modes, suggests the superior quality of the presented InN nanowires, i.e., extremely low residual electron density and the absence of surface electron accumulation, which is consistent with the physical properties of intrinsic InN nanowires as in the previous studies. The detailed phonon sideband properties are also discussed in the text.
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Affiliation(s)
- S Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 2A7, Canada
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