Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors

Collinear optical links based on a GaN-integrated chip for fiber-optic acoustic detection

This Letter reports a collinear optical interconnect architecture for acoustic sensing via a monolithic integrated GaN optoelectronic chip. The chip is designed with a ring-shaped photodiode (PD) surrounding a light-emitting diode (LED) of a spectral range from 420-530 nm. The axisymmetric structure helps the coaxial propagation of light transmission and reception. By placing this multiple-quantum wells (MQW)-based device and a piece of aluminum-coated polyethylene terephthalate (Al/PET) film on fiber ends, an ultra-compact acoustic sensing system is built. The sound vibrations can be simply detected by direct measurement of the diaphragm deformation-induced power change. An average signal noise ratio (SNR) of 40 dB and a maximum sensitivity of 82 mV/Pa are obtained when the acoustic vibration frequency changes from 400 Hz to 3.2 kHz. This work provides a feasible solution to miniaturize the sensing system footprint and reduce the cost.

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.

Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires

The luminescence of In_xGa_1-xN nanowires (NWs) is frequently reported with large red-shifts as compared to the theoretical value expected from the average In content. Both compositional fluctuations and radial built-in fields were considered accountable for this effect, depending on the size, structure, composition, and surrounding medium of the NWs. In the present work, the emission properties of InGaN/GaN NWs grown by plasma-assisted molecular beam epitaxy are investigated in a comprehensive study combining ultraviolet-Raman and photoluminescence spectroscopy (PL) on vertical arrays, polarization-dependent PL on bundles of a few NWs, scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and calculations of the band profiles. The roles of inhomogeneous In distribution and radial fields in the context of optical emission properties are addressed. The radial built-in fields are found to be modest, with a maximum surface band bending below 350 meV. On the other hand, variations in the local In content have been observed that give rise to potential fluctuations whose impact on the emission properties is shown to prevail over band-bending effects. Two luminescence bands with large positive and moderate negative polarization ratios of ≈+80% and ≤-60%, respectively, were observed. The red-shift in the luminescence is associated with In-rich inclusions in the NWs due to thermodynamic decomposition during growth. The negative polarization anisotropy is suggested to result from spontaneously formed superlattices in the In-rich regions of the NWs. The NWs show a preferred orthogonal absorption due to the dielectric boundary conditions and highlight the extreme sensitivity of these structures towards light polarization.

Heterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier

The heterogeneous integration of a GaN-based photonic integrated circuit (PIC) and an Si-based transimpedance amplifier (TIA) is demonstrated in this work. The monolithic GaN PIC, fabricated from a GaN-on-Si light-emitting diode (LED) wafer, comprises LEDs whose optical outputs are coupled to photodetectors (PD) through suspended waveguides. The PIC chip is mounted onto a printed circuit board together with a TIA chip and two filter chip capacitors, occupying a compact footprint. The components are interconnected directly using wire-bonds to minimize signal delays and attenuation. The integrated system achieves rise and fall times of 2.21 and 2.10 ns, respectively, a transmission delay of 3.54 ns, and a bandwidth exceeding 390 MHz. Transmission of a pseudorandom binary sequence-3 (PRBS-3) signal across the integrated system is also demonstrated at the data transmission rate of 280 Mbit/s with a clearly resolved open eye diagram.

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them. Based on this observation we proposed a theoretical model able to explain the results by taking into account the vapour liquid solid growth that takes place under the droplet by direct impingement of nitrogen adatoms.

Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.

Reflection-type photoplethysmography pulse sensor based on an integrated optoelectronic chip with a ring structure

Reflection-type photoplethysmography (PPG) pulse sensors are widely used in consumer markets to measure cardiovascular signals. Different from off-chip package solutions in which the light-emitting diode (LED) and photodetector (PD) are in separate chips, a GaN integrated optoelectronic chip with a novel ring structure is proposed to realize a PPG pulse sensor. The integrated optoelectronic chip consists of two multiple-quantum well (MQW) diodes. For higher sensitivities, the central and peripheral MQW diodes are suitable as the LED and PD, respectively. The results indicate that the integrated optoelectronic chip based on a blue LED epitaxial wafer is more suitable for the integrated PPG sensor based on device performance. Moreover, the amplitude of the PPG pulse signal collected from fingertips is higher than that from a wrist. The feasibility of the reflection-type PPG pulse sensor based on a GaN integrated optoelectronic chip is fully verified with the advantages of smaller sizes and lower costs.

Constant Optical Power Operation of an Ultraviolet LED Controlled by a Smartphone

Constant light power operation of an ultraviolet (UV) LED based on portable low-cost instrumentation and a monolithically integrated monitoring photodiode (MPD) has been reported for the first time. UV light irradiation has become one of the essential measures for disinfection and sterilization. Monitoring and maintaining a specified light power level is important to meet the criteria of sterilization. We built a module composed of a monolithically integrated UV LED and MPD, a transimpedance amplifier, an Arduino Uno card, a digital-to-analog converter and a Bluetooth transceiver. An Android App that we wrote remotely controlled the UV LED module via Bluetooth. The Arduino Uno card was programmed to receive demands from the smartphone, sent a driving voltage to the LED and returned the present MPD voltage to the smartphone. A feedback loop was used to adjust the LED voltage for maintaining a constant light output. We successfully demonstrated the functioning of remote control of the App, and the resultant UV LED measured power remained the same as the setting power. This setup can also be applied to visible or white LEDs for controlling/maintaining mixed light’s chromaticity coordinates or color temperature. With such controlling and internet capability, custom profiling and maintenance of precision lighting remotely would be possible.

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

Single-Crystalline All-Oxide α-γ-β Heterostructures for Deep-Ultraviolet Photodetection

Recent advancements in gallium oxide (Ga₂O₃)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga₂O₃ layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga₂O₃ layer grown on an α-Al₂O₃ substrate through an interfacial γ-In₂O₃ layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In₂O₃ provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga₂O₃, cubic γ-In₂O₃, and trigonal α-Al₂O₃, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga₂O₃/γ-In₂O₃ interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga₂O₃/γ-In₂O₃/α-Al₂O₃ all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 10⁴%, and a specific detectivity of 3.09 × 10¹² Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.

Hot electrons in a nanowire hard X-ray detector

Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption. The core functionality of many nanowire-based devices is embedded in their p-n junctions. To fully unleash their potential, such nanowire-based devices require - besides a high performance - stability and reliability. Here, we report on an axial p-n junction GaAs nanowire X-ray detector that enables ultra-high spatial resolution (~200 nm) compared to micron scale conventional ones. In-operando X-ray analytical techniques based on a focused synchrotron X-ray nanobeam allow probing the internal electrical field and observing hot electron effects at the nanoscale. Finally, we study device stability and find a selective hot electron induced oxidization in the n-doped segment of the p-n junction. Our findings demonstrate capabilities and limitations of p-n junction nanowires, providing insight for further improvement and eventual integration into on-chip devices.

Output Power Monitoring of Ultraviolet Light-Emitting Diode via Sapphire Substrate

Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED) via sapphire substrate is reported. A p–i–n photodiode loop that surrounds the UV-A LED was designed and fabricated to monitor the output power by detecting the scattered light of the LED propagating through the sapphire substrate. No particular waveguide structure or processing parameter control was needed. The monitoring responsivities per unit of surface-emitting power obtained were approximately 21 and 25 mA/W at photodiode biases of 0 and 3 V, respectively. When combined with a transimpedance amplifier, a monitoring responsivity of 1.87 V/mW at zero bias was measured, and a different monitoring responsivity could be customized by adjusting the gain of the transimpedance amplifier. The operation principle of this device might be applicable to UV-B or UV-C LEDs.

Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon

This article reports a nonpolar GaN metal-semiconductor-metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN MSM-PD exhibits a responsivity of 695.3 A/W at 1 V bias and 12628.3 A/W at 5 V bias, both under 360 nm ultraviolet illumination, which are more than 20 times higher and 4 orders of magnitude higher compared to the current state-of-the-art photodetector, respectively. The nonpolar GaN MSM-PD displays a rise time and a fall time of 66 and 43 μs, respectively, which are 3 orders of magnitude faster compared to the current state-of-the-art photodetector.

Nanostructured Organic/Hybrid Materials and Components in Miniaturized Optical and Chemical Sensors

In the last decade, biochemical sensors have brought a disruptive breakthrough in analytical chemistry and microbiology due the advent of technologically advanced systems conceived to respond to specific applications. From the design of a multitude of different detection modalities, several classes of sensor have been developed over the years. However, to date they have been hardly used in point-of-care or in-field applications, where cost and portability are of primary concern. In the present review we report on the use of nanostructured organic and hybrid compounds in optoelectronic, electrochemical and plasmonic components as constituting elements of miniaturized and easy-to-integrate biochemical sensors. We show how the targeted design, synthesis and nanostructuring of organic and hybrid materials have enabled enormous progress not only in terms of modulation and optimization of the sensor capabilities and performance when used as active materials, but also in the architecture of the detection schemes when used as structural/packing components. With a particular focus on optoelectronic, chemical and plasmonic components for sensing, we highlight that the new concept of having highly-integrated architectures through a system-engineering approach may enable the full expression of the potential of the sensing systems in real-setting applications in terms of fast-response, high sensitivity and multiplexity at low-cost and ease of portability.

Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region

Plasmonic nanolasers based on wide bandgap semiconductors are presently attracting immense research interests due to the breaking in light diffraction limit and subwavelength mode operation with fast dynamics. However, these plasmonic nanolasers have so far been mostly realized in the visible light ranges, or most are still under optical excitation pumping. In this work, III-nitride-based plasmonic nanolasers emitting from the green to the deep-ultraviolet (UV) region by energetic electron beam injection are reported, and a threshold as low as 8 kW cm^-2 is achieved. A fast decay time as short as 123 ps is collected, indicating a strong coupling between excitons and surface plasmon. Both the spatial and temporal coherences are observed, which provide a solid evidence for exciton-plasmon coupled polariton lasing. Consequently, the achievements in III-nitride-based plasmonic nanolaser devices represent a significant step toward practical applications for biological technology, computing systems, and on-chip optical communication.

Monolithic integration of GaN-based phototransistors and light-emitting diodes

Monolithic integration of GaN-based phototransistors and light-emitting diodes (LEDs) is reported. Starting with an LED epitaxial wafer, selective Si diffusion was performed to produce an n-p-i-n structure for the phototransistor. A traditional AlGaN bulk electron-blocking layer (EBL) can block electron injection from an emitter to a collector, thereby hindering the photocurrent amplification process. We used an LED wafer with a superlattice EBL; blocking can be removed under a bias of approximately 7 V and above. External quantum efficiencies of more than 100% and 600% at approximately 380 nm and 330 nm, respectively, were achieved at room temperature and a bias of 11 V, corresponding to responsivities of 0.31 and 1.6 A/W, respectively, significantly higher than commercially available ultraviolet (UV) detectors. Furthermore, we demonstrated an integrated operation of the device. UV light was detected using a phototransistor that sent signals to drive an integrated LED as an indicator.

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity. Unexpectedly, these detrimental effects can be suppressed even by a small increase in the nitrogen composition from 0.08% to 0.12%. This is attributed to more efficient trapping of excited carriers/excitons to the localized states promoted by N-induced localization and also the presence of other NR channels. At room temperature, the structural defects no longer dominate in carrier recombination even in the NWs with the lower nitrogen content, likely due to increasing importance of other recombination channels. Our work underlines the need in eliminating important thermally activated NR defects, other than the structural defects, for future optoelectronic applications of these NWs.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO₂ surface. The growth temperature window was found to be rather narrow (815°C ± 5°C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 °C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).

Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector

A self-powered, broad band and ultrafast photodetector based on n⁺-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n⁺ type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n⁺-InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm²), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized.

Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment

Here we have demonstrated the profound impact of surface potential on the luminescence of an array of InGaN/GaN nano-disk in a wire heterostructure. The change in surface potential is brought about by a combination of dry and successive wet-processing treatments. The photoluminescence (PL) properties are determined as a function of size and height of this array of nano-disks. The observed characteristics are coherently explained by considering a change in quantum confinement induced by the change in surface potential, quantum-confined Stark effect, exciton binding energy and strain relaxation for varying surface potential. The change in hole bound state energy due to parabolic potential well near the side-wall is found to be the dominating factor. The PL peak position, full width at half-maximum, strain relaxation and integrated PL intensity are studied as a function of incident power and temperature. The devices demonstrate higher integrated PL intensity and slope efficiency.

Nanoscopic Spotlight in a Spindle Semiconductor Nanowire

Theoretically, no matter how thin a nanowire is, it can transport light in the form of an evanescent field. However, in practice, the low propagation efficiency induced by complex dissipation makes light transport difficult to realize when the nanowire is distinctly thinner than ∼ λ/2. Accordingly, nanowire photonics research at such a scale is limited. Herein, light propagation was achieved in a very thin spindle nanowire (diameter below 70 nm), in which a nanoscopic spotlight formed. The nanowire output a maximum emission in the transverse dimension as small as ∼53 nm. The finite-difference time-domain (FDTD) simulation implied that the increased dimension gradient near the tip induced a maximum leakage of the propagating light at a transverse feature, precisely determined by the intrinsic feature of the nanowire. Moreover, a spectrum splitter phenomenon was observed and demonstrated based on the wavelength-dependent light propagation behavior in such a nanowire. These results contribute to the rational design of nanoscopic near-field illuminant, optoelectric, and photobiological probes with improved resolution largely superior to the so-called subwavelength level.

Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods

Higher indium incorporation in self-organized triangular nanoprisms at the edges of InGaN/GaN core-shell nanorods is directly evidenced by spectral cathodoluminescence microscopy in a scanning transmission electron microscope. The nanoprisms are terminated by three 46 nm wide a-plane nanofacets with sharp interfaces forming a well-defined equilateral triangular base in the basal plane. Redshifted InGaN luminescence and brighter Z-contrast are resolved for these structures compared to the InGaN layers on the nanorod sidewalls, which is attributed to at least 4 % higher indium content. Detailed analysis of the inner optical and structural properties reveals luminescence contributions from 417 nm up to 500 nm peak wavelength proving the increasing indium concentration inside the nanoprism towards the nanorod surface.

Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores

The integration of optically active III-V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the growth of GaAs/Ge core-shell nanowires on Si substrates by molecular beam epitaxy and investigate the radial and axial Ge epitaxy on GaAs nanowires in detail. High-quality core-shell nanowires with smooth side facets and dislocation-free, sharp interfaces are achieved. It is found that the low shell growth temperature leads to smoother side facets, while higher shell growth temperatures lead to more relaxed structures with significantly faceted sidewalls. The possibility of forming a III-V/IV heterostructure nanowire with a Ge section development in the axial direction of a GaAs nanowire using a Ga droplet is also revealed. These nanowires provide an ideal platform for nanoscale III-V/IV combination, which is promising for highly integrated photonic and electronic hybrid devices on a single chip.

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

The optimized design of a photonic platform based on a nanowire light emitting diode (LED) and a nanowire photodetector connected with a waveguide is proposed. The light coupling efficiency from the LED to the detector is optimized as a function of the geometrical parameters of the system using the finite difference time domain simulation tool Lumerical. Starting from a design reported in the literature with a coupling efficiency of only 8.7%, we propose an optimized photonic platform with efficiency reaching 65.5%.

Tandem dual-functioning multiple-quantum-well diodes for a self-powered light source

Nitride-based semiconductor materials inherently have the intriguing functionalities of emission and photodetection. In particular, InGaN/GaN multiple-quantum-well (MQW) diodes exhibit dual light-harvesting and light-emitting modes of operation. Here a multifunctional system is proposed to integrate MQW diodes within a single chip with enhanced functionalities toward diverse applications of the Internet of Things (IoT). When we shine light on the MQW diodes, the absorbed photons can produce electron-hole pairs to charge an external capacitor. The energy of the ambient light is converted into electrical energy, which in turn powers the same MQW diode for lighting. The electrical energy within the capacitor is finally converted into the energy of the emitted light. Therefore, InGaN/GaN MQW diodes can be made to harvest energy from ambient light sources for IoT applications from a self-powered light source to intelligent terminal charging system.

Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics

The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition of photoelectric conversion and optical transition. Here, electric-field-driven photoluminescence (PL) in both steady-state and transient-state has been utilized to directly investigate the internal photoelectric conversion processes in InGaN-based MQW photovoltaic cell. As applying the reversed external electric field, the compensation of the quantum confined stark effect (QCSE) in InGaN QW is beneficial to help the photoabsorbed minor carriers drift out from the localized states, whereas extremely weakening the PL radiative recombination. A directly driven force by the reversed external electric field decreases the transit time of photocarriers drifting in InGaN QW. And hence, the overall dynamic PL decay including both the slow and fast processes gradually speeds up from 19.2 ns at the open-circuit condition to 3.9 ns at a negative bias of -3 V. In particular, the slow PL decay lifetime declines more quickly than that of the fast one. It is the delocalization of photocarriers by electric-field drift that helps to further enhance the high-efficiency photoelectric conversion except for the tunneling transport in InGaN-based MQW photovoltaics. Therefore, it can be concluded that the electric-field PL probe may provide a direct method for evaluating the photoelectric conversion in multilayer quantum structures and related multijunction photovoltaic cells.

On-chip multicomponent system made with an InGaN directional coupler

An on-chip multicomponent system is implemented on a III-nitride-on-silicon platform by integrating a transmitter, InGaN waveguide, InGaN directional coupler, and receivers onto a single chip. The transmitter and the receiver share an identical InGaN/GaN multiple-quantum-well (MQW) diode structure and are produced by using the same wafer-level process flow. The receiver sensitively responds to the short-wavelength half of the emission spectrum of the transmitter, thus realizing the multicomponent system with the capability for inplane light communication. A SiO₂ isolation layer is employed to decrease the p-n junction capacitance, thus improving the modulation rate without modifying the MQW structure. The wire-bonded monolithic multicomponent system experimentally demonstrates inplane data transmission at 80 Mbps and spatial light communication at 100 Mbps, paving the way for diverse applications from on-chip power monitoring to inplane light communication in the visible light spectrum.

Controlled synthesis of organic single-crystalline nanowires via the synergy approach of the bottom-up/top-down processes

The controlled fabrication of organic single-crystalline nanowires (OSCNWs) with a uniform diameter in the nanoscale via the bottom-up approach, which is just based on weak intermolecular interaction, is a great challenge. Herein, we utilize the synergy approach of the bottom-up and the top-down processes to fabricate OSCNWs with diameters of 120 ± 10 nm through stepwise evolution processes. Specifically, the evolution processes vary from the self-assembled organic micro-rods with a quadrangular pyramid-like end-structure bounded with {111}s and {11-1}s crystal planes to the "top-down" synthesized organic micro-rods with the flat cross-sectional {002}s plane, to the organic micro-tubes with a wall thickness of ∼115 nm, and finally to the organic nanowires. Notably, the anisotropic etching process caused by the protic solvent molecules (such as ethanol) is crucial for the evolution of the morphology throughout the whole top-down process. Therefore, our demonstration opens a new avenue for the controlled-fabrication of organic nanowires, and also contributes to the development of nanowire-based organic optoelectronics such as organic nanowire lasers.

Monolithic III-nitride photonic integration toward multifunctional devices

The multiple functionalities of III-nitride semiconductors enable the integration with different components into a multicomponent system with enhanced functions. Here, we propose to fabricate and characterize a monolithic InGaN photonic circuit of a transmitter, waveguide, and receiver on an III-nitride-on-silicon platform. Both the transmitter and the receiver, sharing identical InGaN/GaN multiple-quantum-well structures and fabrication procedures, work to emit light and detect light independently. The 8 μm wide and 200 μm long InGaN waveguide couples the modulated light from the transmitter and sends the guided light to the receiver, leading to the formation of an in-plane light transmission system. The induced photocurrent at the receiver is highly sensitive to the light output of the transmitter. Multi-dimensional light transmissions are experimentally demonstrated at 200 Mb/s. These multifunctional photonic circuits open feasible approaches to the development of III-nitride multicomponent systems with integrated functions for comprehensive applications in the visible region.

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 μm. The combination of spectral photocurrent measurements with 8-band k·p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly efficient quantum cascade emitters with improved thermal stability.

Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers

Single nanowire lasers based on bottom-up III-V materials have been shown to exhibit room-temperature near-infrared lasing, making them highly promising for use as nanoscale, silicon-integrable, and coherent light sources. While lasing behavior is reproducible, small variations in growth conditions across a substrate arising from the use of bottom-up growth techniques can introduce interwire disorder, either through geometric or material inhomogeneity. Nanolasers critically depend on both high material quality and tight dimensional tolerances, and as such, lasing threshold is both sensitive to and a sensitive probe of such inhomogeneity. We present an all-optical characterization technique coupled to statistical analysis to correlate geometrical and material parameters with lasing threshold. For these multiple-quantum-well nanolasers, it is found that low threshold is closely linked to longer lasing wavelength caused by losses in the core, providing a route to optimized future low-threshold devices. A best-in-group room temperature lasing threshold of ∼43 μJ cm^-2 under pulsed excitation was found, and overall device yields in excess of 50% are measured, demonstrating a promising future for the nanolaser architecture.

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Single-material monolithic optoelectronic integrated circuits via CMOS compatible low-temperature approaches are crucial to the continued development of post-Moore electronics. Liu et al., report carbon nanotube based electrically driven 3D monolithic optoelectronic integrated circuits.

Lattice-Matched Epitaxial Growth of Organic Heterostructures for Integrated Optoelectronic Application

Development of nanowire photonics requires integration of different nanowire components into highly ordered functional heterostructures. Herein, we report a sequential self-assembly of binary molecular components into branched nanowire heterostructures (BNHs) via lattice-matched epitaxial growth, in which the microribbon backbone of 2,5-Bis(5-tert-butyl-2-benzoxazolyl)thiophene (BBOT) functions as blue-emitting microlaser source to pump the nanowire branches of BODIPY. By constructing Au electrodes on both branch sides and measuring the photocurrent in them, we successfully realize the integration of an organic laser and a power meter in a single device. This work provides a new insight into the integration of 1D organic nanostructures into BNHs for realizing organic multifunctional photonic devices.

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

We report on strain-induced structural defect formation in core Si nanowires of a Si/Ge core/shell nanowire heterostructure and the influence of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in the Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only the Ge shell region or in both the Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relaxation of the misfit strain in the [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of crossover of defect formation is of great importance for understanding heteroepitaxy in radial heterostructures at the nanoscale and for building three dimensional heterostructures for the various applications. Furthermore, the effect of the defect formation on the nanomaterial's functionality is investigated using electrochemical performance tests. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W⁻¹ at 300 nm.

Ultraviolet optomechanical crystal cavities with ultrasmall modal mass and high optomechanical coupling rate

Optomechanical crystal (OMC) cavities which exploit the simultaneous photonic and phononic bandgaps in periodic nanostructures have been utilized to colocalize, couple, and transduce optical and mechanical resonances for nonlinear interactions and precision measurements. The development of near-infrared OMC cavities has difficulty in maintaining a high optomechanical coupling rate when scaling to smaller mechanical modal mass because of the reduction of the spatial overlap between the optical and mechanical modes. Here, we explore OMC nanobeam cavities in gallium nitride operating at the ultraviolet wavelengths to overcome this problem. With a novel optimization strategy, we have successfully designed an OMC cavity, with a size of 3.83 × 0.17 × 0.13 μm³ and the mechanical modal mass of 22.83 fg, which possesses an optical mode resonating at the wavelength of 393.03 nm and the fundamental mechanical mode vibrating at 14.97 GHz. The radiation-limited optical Q factor, mechanical Q factor, and optomechanical coupling rate are 2.26 × 10⁷, 1.30 × 10⁴, and 1.26 MHz, respectively. Our design and optimization approach can also serve as the general guidelines for future development of OMC cavities with improved device performance.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Single nanowire green InGaN/GaN light emitting diodes

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.

On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

Localised excitation of a single photon source by a nanowaveguide

Nowadays, integrated photonics is a key technology in quantum information processing (QIP) but achieving all-optical buses for quantum networks with efficient integration of single photon emitters remains a challenge. Photonic crystals and cavities are good candidates but do not tackle how to effectively address a nanoscale emitter. Using a nanowire nanowaveguide, we realise an hybrid nanodevice which locally excites a single photon source (SPS). The nanowire acts as a passive or active sub-wavelength waveguide to excite the quantum emitter. Our results show that localised excitation of a SPS is possible and is compared with free-space excitation. Our proof of principle experiment presents an absolute addressing efficiency ηa ~ 10(-4) only ~50% lower than the one using free-space optics. This important step demonstrates that sufficient guided light in a nanowaveguide made of a semiconductor nanowire is achievable to excite a single photon source. We accomplish a hybrid system offering great potentials for electrically driven SPSs and efficient single photon collection and detection, opening the way for optimum absorption/emission of nanoscale emitters. We also discuss how to improve the addressing efficiency of a dipolar nanoscale emitter with our system.

Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique

The growth of regularly patterned multi-section GaN nanorod (NR) arrays based on a pulsed growth technique with metalorganic chemical vapor deposition is demonstrated. Such an NR with multiple sections of different cross-sectional sizes is formed by tapering a uniform cross section to another through stepwise decreasing of the Ga supply duration to reduce the size of the catalytic Ga droplet. Contrast line structures are observed in either a scanning electron microscopy or transmission electron microscopy image of an NR. Such a contrast line-marker corresponds to a thin Ga-rich layer formed at the beginning of GaN precipitation of a pulsed growth cycle and illustrates the boundary between two successive growth cycles in pulsed growth. By analyzing the geometry variation of the contrast line-markers, the morphology evolution in the growth of a multi-section NR, including a tapering process, can be traced. Such a morphology variation is controlled by the size of the catalytic Ga droplet and its coverage range on the slant facets at the top of an NR. The comparison of emission spectra between single-, two-, and three-section GaN NRs with sidewall InGaN/GaN quantum wells indicates that a multi-section NR can lead to a significantly broader sidewall emission spectrum.

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electroluminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.

Mode Profiling of Semiconductor Nanowire Lasers

We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO2 substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111)

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.