Competing ultrafast energy relaxation pathways in photoexcited graphene

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous-wave and long-pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro- and nanopatterning. A forward-looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.

Coherent Terahertz Detection via Ultrafast Dynamics of Hot Dirac Fermions in Graphene

Graphene has recently been shown to exhibit ultrafast conductivity modulation due to periodic carrier heating by either terahertz (THz) waves, leading to self-induced harmonic generation, or the intensity beat note of two-color optical radiation. We exploit the latter to realize an optoelectronic photomixer for coherent, continuous-wave THz detection, based on a photoconductive antenna with multilayer CVD-grown graphene in the gap. While for biased THz emitters the dark current would pose a serious detriment for performance, we show that this is not the case for bias-free THz detection and demonstrate detection up to frequencies of at least 700 GHz at room temperature, even without optimized tuning of the doping. We account for the photocurrent and photomixing response using detailed simulations of the time-dependent carrier distribution, which also indicate significant potential for enhancement of the sensitivity, to become competitive with well-established semiconductor photomixers.

Long-Lived Photo-Response of Multi-Layer N-Doped Graphene-Based Films

New insights into the mechanism of the improved photo(electro)catalytic activity of graphene by heteroatom doping were explored by transient transmittance and reflectance spectroscopy of multi-layer N-doped graphene-based samples on a quartz substrate prepared by chitosan pyrolysis in the temperature range 900-1200 °C compared to an undoped graphene control. All samples had an expected photo-response: fast relaxation (within 1 ps) due to decreased plasmon damping and increased conductivity. However, the N-doped graphenes had an additional transient absorption signal of roughly 10 times lower intensity, with 10-50 ps formation time and the lifetime extending into the nanosecond domain. These photo-induced responses were recalculated as (complex) dielectric function changes and decomposed into Drude-Lorentz parameters to derive the origin of the opto(electronic) responses. Consequently, the long-lived responses were revealed to have different dielectric function spectra from those of the short-lived responses, which was ultimately attributed to electron trapping at doping centers. These trapped electrons are presumed to be responsible for the improved catalytic activity of multi-layer N-doped graphene-based films compared to that of multi-layer undoped graphene-based films.

Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces

Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS₂ vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.

Graphene-based terahertz bias-driven negative-conductivity metasurface

A graphene-based terahertz negative-conductivity metasurface based on two types of unit cell structures is investigated under the control of an external bias voltage. Electrical characterization is conducted and verification is performed using a finite-difference time-domain (FDTD) and an optical-pump terahertz (THz)-probe system in terms of simulation and transient response analysis. Owing to the metal-like properties of graphene, a strong interaction between the metasurface and monolayer graphene yields a short-circuit effect, which considerably weakens the intensity of the resonance mode under passive conditions. Under active conditions, graphene, as an active load, actively induces a negative-conductivity effect, which enhances the THz transmission and recovers the resonance intensity gradually because of the weakening of the short-circuit effect. The resulting resonance frequency shows a blue shift. This study provides a reference value for combining graphene exhibiting the terahertz bias-driven negative-conductivity effect with metasurfaces and its corresponding applications in the future.

Tunable ultrafast electron transfer in WSe2-graphene heterostructures enabled by atomic stacking order

Efficient interfacial light-electric interconversion in van der Waals (vdW) heterostructures is crucial for their optoelectronic applications. However, an in-depth understanding of the necessary process for device operation, namely interfacial charge transfer (CT), has thus far remained elusive. In this study, by using photon energy-dependent transient THz spectroscopy, we complementarily investigate the interfacial CT process in heterostructures comprising monolayers of WSe₂ and graphene with varying stacking orders on a sapphire substrate. We observe that the CT mechanism of the sub-A-exciton excitation is different from that of the above-A-exciton excitation. Notably, the CT process occurs via a photo-thermionic emission for sub-A-exciton excitations and a direct electron (or hole) transfer for above-A-exciton excitations. Furthermore, we demonstrate that the effective electric field induced by the sapphire substrate could adjust the Schottky barrier from a p-type contact (WSe₂/Gr/sapphire) to an n-type contact (Gr/WSe₂/sapphire). Consequently, it is more beneficial for the photo-thermionic electrons to transfer from graphene to WSe₂ over the Schottky barrier in Gr/WSe₂/sapphire. These results can provide new insights into the CT process in graphene-transition metal dichalcogenide (TMDC) vdW interfaces, which are critical to potential optoelectronic applications of graphene-TMDC heterostructures.

Tunable extreme energy transfer of terahertz waves with graphene in a nested cavity

Energy transfer is an essential light-matter interaction. The transfer efficiency is critical for various applications such as light-emitting, optical modulation, and the photoelectric effect. Two primary forms of light-matter energy transfer, including absorption and emission, can be enhanced in optical cavities. Both forms can reach an extremum inside the cavity according to the coupled-mode theory. Graphene conductivity at the terahertz frequency can be tuned from positive to negative, providing a suitable material to study switchable extremums of these two forms. We integrate graphene with a nested cavity where an infrared cavity is inserted in a terahertz cavity, thereby achieving terahertz perfect absorption at the static state and optimal gain under photoexcitation. Leveraging an inserted infrared cavity, we can elevate the working efficiency by strongly absorbing the infrared pump. We also numerically show the feasibility of electrically tunable extreme energy transfer. Our concept of the nested cavity can be extended to different materials and even to guided modes. A switchable synergy of loss and gain potentially enables high-contrast dynamic modulation and photonic devices with multiplexing functions.

Mid-infrared radiative emission from bright hot plasmons in graphene

Carrier excitation and decay processes in graphene are of broad interest since relaxation pathways that are not present in conventional materials are enabled by a gapless Dirac electronic band structure. Here, we report that a previously unobserved decay pathway-hot plasmon emission-results in Fermi-level-dependent mid-infrared emission in graphene. Our observations of non-thermal contributions to Fermi-level-dependent radiation are an experimental demonstration of hot plasmon emission arising from a photo-inverted carrier distribution in graphene achieved via ultrafast optical excitation. Our calculations indicate that the reported plasmon emission process can be several orders of magnitude brighter than Planckian emission mechanisms in the mid-infrared spectral range. Both the use of gold nanodisks to promote scattering and localized plasmon excitation and polarization-dependent excitation measurements provide further evidence for bright hot plasmon emission. These findings define an approach for future work on ultrafast and ultrabright graphene emission processes and mid-infrared light source applications.

Lattice Vibrations and Time-Dependent Evolution of Local Phonon Modes during Exciton Formation in Conjugated Polymeric Molecules

Based on nonadiabatic molecular dynamics that integrate electronic transitions with the time-dependent phonon spectrum, this article provides a panoramic landscape of the dynamical process during the formation of photoinduced excitons in conjugated polymers. When external optical beam/pulses with intensities of 10 µJ/cm² and 20 µJ/cm² are utilized to excite a conjugated polymer, it is found that the electronic transition firstly triggers local lattice vibrations, which not only locally distort alternating bonds but change the phonon spectrum as well. Within the first 60 fs, the occurrence of local distortion of alternating bonds accompanies the localization of the excited-state’s electron. Up to 100 fs, both alternating bonds and the excited electronic state are well localized in the middle of the polymer chain. In the first ~200 fs, the strong lattice vibration makes a local phonon mode at 1097.7 cm⁻¹ appear in the phonon spectrum. The change of electron states then induces the self-trapping effect to act on the following photoexcitation process of 1.2 ps. During the following relaxation of 1.0 ps, new local infrared phonon modes begin to occur. All of this, incorporated with the occurrence of local infrared phonon modes and localized electronic states at the end of the relaxation, results in completed exciton formation.

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Optoelectronic mixing with high-frequency graphene transistors

Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (E_F). At low E_F (<130 meV), a positive photocurrent is generated, while at large E_F (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.).

Electrical tunability of terahertz nonlinearity in graphene

Graphene is conceivably the most nonlinear optoelectronic material we know. Its nonlinear optical coefficients in the terahertz frequency range surpass those of other materials by many orders of magnitude. Here, we show that the terahertz nonlinearity of graphene, both for ultrashort single-cycle and quasi-monochromatic multicycle input terahertz signals, can be efficiently controlled using electrical gating, with gating voltages as low as a few volts. For example, optimal electrical gating enhances the power conversion efficiency in terahertz third-harmonic generation in graphene by about two orders of magnitude. Our experimental results are in quantitative agreement with a physical model of the graphene nonlinearity, describing the time-dependent thermodynamic balance maintained within the electronic population of graphene during interaction with ultrafast electric fields. Our results can serve as a basis for straightforward and accurate design of devices and applications for efficient electronic signal processing in graphene at ultrahigh frequencies.

Long-lived charge separation following pump-wavelength-dependent ultrafast charge transfer in graphene/WS2 heterostructures

Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides have shown great promise for optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely, interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS₂ heterostructures by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS₂ following photoexcitation. We observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. Furthermore, for the CT process across graphene-WS₂ interfaces, we find that it occurs via photo-thermionic emission for sub-A-exciton excitations and direct hole transfer from WS₂ to the valence band of graphene for above-A-exciton excitations. These findings provide insights to further optimize the performance of optoelectronic devices, in particular photodetection.

Grating-Graphene Metamaterial as a Platform for Terahertz Nonlinear Photonics

Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and a small material footprint. Ideally, the material system should allow for chip integration and room-temperature operation. Two-dimensional materials are highly interesting in this regard. Particularly promising is graphene, which has demonstrated an exceptionally large nonlinearity in the terahertz regime. Yet, the light-matter interaction length in two-dimensional materials is inherently minimal, thus limiting the overall nonlinear optical conversion efficiency. Here, we overcome this challenge using a metamaterial platform that combines graphene with a photonic grating structure providing field enhancement. We measure terahertz third-harmonic generation in this metamaterial and obtain an effective third-order nonlinear susceptibility with a magnitude as large as 3 × 10^-8 m²/V², or 21 esu, for a fundamental frequency of 0.7 THz. This nonlinearity is 50 times larger than what we obtain for graphene without grating. Such an enhancement corresponds to a third-harmonic signal with an intensity that is 3 orders of magnitude larger due to the grating. Moreover, we demonstrate a field conversion efficiency for the third harmonic of up to ∼1% using a moderate field strength of ∼30 kV/cm. Finally, we show that harmonics beyond the third are enhanced even more strongly, allowing us to observe signatures of up to the ninth harmonic. Grating-graphene metamaterials thus constitute an outstanding platform for commercially viable, CMOS-compatible, room-temperature, chip-integrated, THz nonlinear conversion applications.

Charge Accumulation of Amplified Spontaneous Emission in a Conjugated Polymer Chain and Its Dynamical Phonon Spectra

In this article, the detailed photoexcitation dynamics which combines nonadiabatic molecular dynamics with electronic transitions shows the occurrence of amplified spontaneous emission (ASE) in conjugated polymers, accompanied by spontaneous electric polarization. The elaborate molecular dynamic process of ultrafast photoexcitation can be described as follows: Continuous external optical pumping (laser of 70 µJ/cm²) not only triggers the appearance of an instantaneous four-level electronic structure but causes population inversion for ASE as well. At the same time, the phonon spectrum of the conjugated polymer changes, and five local infrared lattice vibrational modes form at the two ends, which break the original symmetry in the system and leads to charge accumulation at the ends of the polymer chain without an external electric field. This novel phenomenon gives a brand-new avenue to explain how the lattice vibrations play a role in the evolution of the stimulated emission, which leads to an ultrafast effect in solid conjugated polymers.

Dynamical Control over Terahertz Electromagnetic Interference Shielding with 2D Ti3C2Ty MXene by Ultrafast Optical Pulses

High electrical conductivity and strong absorption of electromagnetic radiation in the terahertz (THz) frequency range by metallic 2D MXene Ti₃C₂T_y make it a promising material for electromagnetic interference shielding, THz detectors, and transparent conducting electrodes. Here, we demonstrate that ultrafast optical pulses with wavelengths straddling the visible range (400 and 800 nm) induce transient broad-band THz transparency in the MXene that persists for nanoseconds. We demonstrate that optically induced transient THz transparency is independent of temperature from 95 to 290 K. This discovery opens new possibilities for development of switchable electromagnetic interference shielding materials and devices that can be rendered partially transparent on demand for transmitting THz signals, or for designing new THz devices such as sensitive optically gated detectors.

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene

Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. Here, we employ terahertz spectroscopy as a contact-free means to investigate the impact of ubiquitous cations (Li⁺, Na⁺, K⁺, and Ca²⁺) in aqueous solution on the electronic properties of SiO₂-supported graphene. We find that, without applying any external potential, cations can shift the Fermi energy of initially hole-doped graphene by ∼200 meV up to the Dirac point, thus counteracting the initial substrate-induced hole doping. Remarkably, the cation concentration and cation hydration complex size determine the kinetics and magnitude of this shift in the Fermi level. Combined with theoretical calculations, we show that the ion-induced Fermi level shift of graphene involves cationic permeation through graphene. The interfacial cations located between graphene and SiO₂ electrostatically counteract the substrate-induced hole doping effect in graphene. These insights are crucial for graphene device processing and further developing graphene as an ion-sensing material.

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Bismuth selenide (Bi₂Se₃) is a prototypical 3D topological insulator whose Dirac surface states have been extensively studied theoretically and experimentally. Surprisingly little, however, is known about the energetics and dynamics of electrons and holes within the bulk band structure of the semiconductor. We use mid-infrared femtosecond transient reflectance measurements on a single nanoflake to study the ultrafast thermalization and recombination dynamics of photoexcited electrons and holes within the extended bulk band structure over a wide energy range (0.3 to 1.2 eV). Theoretical modeling of the reflectivity spectral line shapes at 10 K demonstrates that the electrons and holes are photoexcited within a dense and cold electron gas with a Fermi level positioned well above the bottom of the lowest conduction band. Direct optical transitions from the first and the second spin-orbit split valence bands to the Fermi level above the lowest conduction band minimum are identified. The photoexcited carriers thermalize rapidly to the lattice temperature within a couple of picoseconds due to optical phonon emission and scattering with the cold electron gas. The minority carrier holes recombine with the dense electron gas within 150 ps at 10 K and 50 ps at 300 K. Such knowledge of interaction of electrons and holes within the bulk band structure provides a foundation for understanding how such states interact dynamically with the topologically protected Dirac surface states.

Tunable terahertz photoconductivity of hydrogen functionalized graphene using optical pump-terahertz probe spectroscopy

We show that the terahertz photoconductivity of monolayer graphene following 800 nm femtosecond optical pump excitation can be tuned by different levels of hydrogenation (graphane) and provide a quantitative understanding of the unique spectral dependence of photoconductivity. The real part of terahertz photoconductivity (Δσ_Re(ω)), which is negative in doped pristine graphene, becomes positive after hydrogenation. Frequency and electronic temperature T_e dependent conductivity σ(ω, T_e) is calculated using the Boltzmann transport equation taking into account the energy dependence of different scattering rates of the hot carriers. It is shown that the carrier scattering rate dominated by disorder-induced short-range scattering, though sufficient for pristine graphene, is not able to explain the observed complex Δσ(ω) for graphane. Our results are explained by considering the system to be heterogeneous after hydrogenation where conductivity is a weighted sum of conductivities of two parts: one dominated by Coulomb scattering coming from trapped charge impurities in the underlying substrate and the other dominated by short-range scattering coming from disorder, surface defects, dislocations and ripples in graphene flakes. A finite band gap opening due to hydrogenation is shown to be important in determining Δσ(ω).

The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies

For many of the envisioned optoelectronic applications of graphene, it is crucial to understand the subpicosecond carrier dynamics immediately following photoexcitation and the effect of photoexcitation on the electrical conductivity-the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy have been put forward. We present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump-terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy (E_F ≲ 0.1 eV for our experiments), broadening of the carrier distribution involves interband transitions (interband heating). At higher Fermi energy (E_F ≳ 0.15 eV), broadening of the carrier distribution involves intraband transitions (intraband heating). Under certain conditions, additional electron-hole pairs can be created [carrier multiplication (CM)] for low E_F, and hot carriers (hot-CM) for higher E_F. The resultant photoconductivity is positive (negative) for low (high) E_F, which in our physical picture, is explained using solely electronic effects: It follows from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.

Transient Carrier Cooling Enhanced by Grain Boundaries in Graphene Monolayer

Using a high terahertz (THz) electric field (E_THz), the carrier scattering in graphene was studied with an electric field of up to 282 kV/cm. When the grain size of graphene monolayers varies from small (5 μm) and medium (70 μm) to large grains (500 μm), the dominant carrier scattering source in large- and small-grained graphene differs at high THz field, i.e., there is optical phonon scattering for large grains and defect scattering for small grains. Although the electron-optical phonon coupling strength is the same for all grain sizes in our study, the enhanced optical phonon scattering in the high THz field from the large-grained graphene is caused by a higher optical phonon temperature, originating from the slow relaxation of accelerated electrons. Unlike the large-grained graphene, lower electron and optical phonon temperatures are found in the small-grained graphene monolayer, resulting from the effective carrier cooling through the defects, called supercollisions. Our results indicate that the carrier mobility in the high-crystalline graphene is easily vulnerable to scattering by the optical phonons. Thus, controlling the population of defect sites, as a means for carrier cooling, can enhance the carrier mobility at high electric fields in graphene electronics by suppressing the heating of optical phonons.

Strong field transient manipulation of electronic states and bands

In the present review, laser fields are so strong that they become part of the electronic potential, and sometimes even dominate the Coulomb contribution. This manipulation of atomic potentials and of the associated states and bands finds fascinating applications in gases and solids, both in the bulk and at the surface. We present some recent spectacular examples obtained within the NCCR MUST in Switzerland.

Intensity dependences of the nonlinear optical excitation of plasmons in graphene

Recently, we demonstrated an all-optical coupling scheme for plasmons, which takes advantage of the intrinsic nonlinear optical response of graphene. Frequency mixing using free-space, visible light pulses generates surface plasmons in a planar graphene sample, where the phase matching condition can define both the wavevector and energy of surface waves and intraband transitions. Here, we also show that the plasmon generation process is strongly intensity-dependent, with resonance features washed out for absorbed pulse fluences greater than 0.1 J m^-2 This implies a subtle interplay between the nonlinear generation process and sample heating. We discuss these effects in terms of a non-equilibrium charge distribution using a two-temperature model.This article is part of the themed issue 'New horizons for nanophotonics'.

Photoprompted Hot Electrons from Bulk Cross-Linked Graphene Materials and Their Efficient Catalysis for Atmospheric Ammonia Synthesis

Ammonia synthesis is the single most important chemical process in industry and has used the successful heterogeneous Haber-Bosch catalyst for over 100 years and requires processing under both high temperature (300-500 °C) and pressure (200-300 atm); thus, it has huge energy costs accounting for about 1-3% of human's energy consumption. Therefore, there has been a long and vigorous exploration to find a milder alternative process. Here, we demonstrate that by using an iron- and graphene-based catalyst, Fe@3DGraphene, hot (ejected) electrons from this composite catalyst induced by visible light in a wide range of wavelength up to red could efficiently facilitate the activation of N₂ and generate ammonia with H₂ directly at ambient pressure using light (including simulated sun light) illumination directly. No external voltage or electrochemical or any other agent is needed. The production rate increases with increasing light frequency under the same power and with increasing power under the same frequency. The mechanism is confirmed by the detection of the intermediate N₂H₄ and also with a measured apparent activation energy only ∼1/4 of the iron based Haber-Bosch catalyst. Combined with the morphology control using alumina as the structural promoter, the catalyst retains its activity in a 50 h test.

Subwavelength Terahertz Imaging of Graphene Photoconductivity

Using a spatially structured, optical pump pulse with a terahertz (THz) probe pulse, we are able to determine spatial variations of the ultrafast THz photoconductivity with subwavelength resolution (75 μm ≈ λ/5 at 0.8 THz) in a planar graphene sample. We compare our results to Raman spectroscopy and correlate the existence of the spatial inhomogeneities between the two measurements. We find a strong correlation with inhomogeneity in electron density. This demonstrates the importance of eliminating inhomogeneities in doping density during CVD growth and fabrication for photoconductive devices.

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

Slow Noncollinear Coulomb Scattering in the Vicinity of the Dirac Point in Graphene

The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k directions pointing radially away from the Dirac point. Our study reveals, however, that, in almost intrinsic graphene, full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps time scale. This effect is very promising for infrared and THz devices based on hot carrier effects.

Reduced Photoconductivity Observed by Time-Resolved Terahertz Spectroscopy in Metal Nanofilms with and without Adhesion Layers

Non-contact, optical time-resolved terahertz spectroscopy (TRTS) has been used to study the transient photoconductivity of nanometer-scale metallic films deposited on fused quartz substrates. Samples of 8 nm thick gold or titanium show an instrument-limited (ca. 0.5 ps) decrease in conductivity following photoexcitation due to electron-phonon coupling and subsequent increased lattice temperatures which increases charge carrier scattering. In contrast, for samples of 8 nm gold with a 4 nm adhesion layer of titanium or chromium, a ca. 70 ps rise time for the lattice temperature increase is observed. These results establish the increased transient terahertz transmission sign change of metallic compared to semiconductor materials. The results also suggest nanoscale gold films that utilize an adhesion material do not consist of distinct layers.

Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene

The ultrafast dynamics of hot carriers in graphene are key to both understanding of fundamental carrier–carrier interactions and carrier–phonon relaxation processes in two-dimensional materials, and understanding of the physics underlying novel high-speed electronic and optoelectronic devices. Many recent experiments on hot carriers using terahertz spectroscopy and related techniques have interpreted the variety of observed signals within phenomenological frameworks, and sometimes invoke extrinsic effects such as disorder. Here, we present an integrated experimental and theoretical programme, using ultrafast time-resolved terahertz spectroscopy combined with microscopic modelling, to systematically investigate the hot-carrier dynamics in a wide array of graphene samples having varying amounts of disorder and with either high or low doping levels. The theory reproduces the observed dynamics quantitatively without the need to invoke any fitting parameters, phenomenological models or extrinsic effects such as disorder. We demonstrate that the dynamics are dominated by the combined effect of efficient carrier–carrier scattering, which maintains a thermalized carrier distribution, and carrier–optical–phonon scattering, which removes energy from the carrier liquid.

Design of high-speed graphene-based devices relies on understanding of its ultrafast carrier dynamics. Here, the authors combine time-resolved terahertz spectroscopy and microscopic modelling to unveil the interplay between the scattering mechanisms dominating the ultrafast relaxation pathways in graphene.

Thermodynamic picture of ultrafast charge transport in graphene

The outstanding charge transport properties of graphene enable numerous electronic applications of this remarkable material, many of which are expected to operate at ultrahigh speeds. In the regime of ultrafast, sub-picosecond electric fields, however, the very high conduction properties of graphene are not necessarily preserved, with the physical picture explaining this behaviour remaining unclear. Here we show that in graphene, the charge transport on an ultrafast timescale is determined by a simple thermodynamic balance maintained within the graphene electronic system acting as a thermalized electron gas. The energy of ultrafast electric fields applied to graphene is converted into the thermal energy of its entire charge carrier population, near-instantaneously raising the electronic temperature. The dynamic interplay between heating and cooling of the electron gas ultimately defines the ultrafast conductivity of graphene, which in a highly nonlinear manner depends on the dynamics and the strength of the applied electric fields.

A linear energy–momentum relation of graphene results in a high direct-current electron mobility, but this is not necessarily true at terahertz frequencies. Here, the authors show that its ultrafast conductivity is dependent on a highly nonlinear interplay between heating and cooling of the electron gas.

Generation of photovoltage in graphene on a femtosecond timescale through efficient carrier heating

Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies have addressed the general operation of graphene-based photothermoelectric devices and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster timescale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 fs. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 fs laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity of between 500 and 1,500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.

Hot-carrier photocurrent effects at graphene-metal interfaces

Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an elevated electron temperature and the concomitant generation of a photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for photosensing and light harvesting. Here, we experimentally study the generated photocurrent at the graphene-metal interface, focusing on the time-resolved photocurrent, the effects of photon energy, Fermi energy and light polarization. We show that a single framework based on photo-thermoelectric photocurrent generation explains all experimental results.

Tunable carrier multiplication and cooling in graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.