Graphene structures at an extreme degree of buckling

Impacts of Random Atomic Defects on Critical Buckling Stress of Graphene under Different Boundary Conditions

Buckled graphene has potential applications in energy harvest, storage, conversion, and hydrogen storage. The investigation and quantification analysis of the random porosity in buckled graphene not only contributes to the performance reliability evaluation, but it also provides important references for artificial functionalization. This paper proposes a stochastic finite element model to quantify the randomly distributed porosities in pristine graphene. The Monte Carlo stochastic sampling process is combined with finite element computation to simulate the mechanical property of buckled graphene. Different boundary conditions are considered, and the corresponding results are compared. The impacts of random porosities on the buckling patterns are recorded and analyzed. Based on the large sampling space provided by the stochastic finite element model, the discrepancies caused by the number of random porosities are discussed. The possibility of strengthening effects in critical buckling stress is tracked in the large sampling space. The distinguishable interval ranges of probability density distribution for the relative variation of the critical buckling stress prove the promising potential of artificial control by the atomic vacancy amounts. In addition, the approximated Gaussian density distribution of critical buckling stress demonstrates the stochastic sampling efficiency by the Monte Carlo method and the artificial controllability of porous graphene. The results of this work provide new ideas for understanding the random porosities in buckled graphene and provide a basis for artificial functionalization through porosity controlling.

Unconventional Atomic Structure of Graphene Sheets on Solid Substrates

The atomic structure of free-standing graphene comprises flat hexagonal rings with a 2.5 Å period, which is conventionally considered the only atomic period and determines the unique properties of graphene. Here, an unexpected highly ordered orthorhombic structure of graphene is directly observed with a lattice constant of ≈5 Å, spontaneously formed on various substrates. First-principles computations show that this unconventional structure can be attributed to the dipole between the graphene surface and substrates, which produces an interfacial electric field and induces atomic rearrangement on the graphene surface. Further, the formation of the orthorhombic structure can be controlled by an artificially generated interfacial electric field. Importantly, the 5 Å crystal can be manipulated and transformed in a continuous and reversible manner. Notably, the orthorhombic lattice can control the epitaxial self-assembly of amyloids. The findings reveal new insights about the atomic structure of graphene, and open up new avenues to manipulate graphene lattices.

Buckling Analysis of Vacancy-Defected Graphene Sheets by the Stochastic Finite Element Method

Vacancy defects are unavoidable in graphene sheets, and the random distribution of vacancy defects has a significant influence on the mechanical properties of graphene. This leads to a crucial issue in the research on nanomaterials. Previous methods, including the molecular dynamics theory and the continuous medium mechanics, have limitations in solving this problem. In this study, the Monte Carlo-based finite element method, one of the stochastic finite element methods, is proposed and simulated to analyze the buckling behavior of vacancy-defected graphene. The critical buckling stress of vacancy-defected graphene sheets deviated within a certain range. The histogram and regression graphs of the probability density distribution are also presented. Strengthening effects on the mechanical properties by vacancy defects were detected. For high-order buckling modes, the regularity and geometrical symmetry in the displacement of graphene were damaged because of a large amount of randomly dispersed vacancy defects.

Compressive response and buckling of graphene nanoribbons

We examine the mechanical response of single layer graphene nanoribbons (GNR) under constant compressive loads through molecular dynamics simulations. Compressive stress-strain curves are presented for GNRs of various lengths and widths. The dependence of GNR's buckling resistance on its size, aspect ratio, and chiral angle is discussed and approximate corresponding relations are provided. A single master curve describing the dependence of the critical buckling stress of GNRs on their aspect ratio is presented. Our findings were compared to the continuum elasticity theories for wide plates and wide columns. In the large width limit, the response of the GNRs agrees with the predictions of the wide plates theory and thus, with that of wide graphenes. In the small width limit, the behavior of graphene nanoribbons deviates from that of periodic graphenes due to various edge related effects which govern the stiffness and the stability of the graphene membranes, but it qualitatively agrees with the theory of wide columns. In order to assess the effect of thermal fluctuations on the critical buckling stress a wide range of temperatures is examined. The findings of the current study could provide important insights regarding the feasibility and the evaluation of the performance of graphene-based devices.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Rehybridization-induced charge density oscillations in the long-range corrugated silicene

One-dimensional long-range periodic structural deformation leads to a novel state of matter, called the rehybridization-induced sublattice-polarized charge density oscillation phase.

Out-of-plane structural flexibility of phosphorene

Phosphorene has been rediscovered recently, establishing itself as one of the most promising two-dimensional group-V elemental monolayers with direct band gap, high carrier mobility, and anisotropic electronic properties. In this paper, surface buckling and its effect on its electronic properties are investigated by using molecular dynamics simulations together with density functional theory calculations. We find that phosphorene shows superior structural flexibility along the armchair direction allowing it to have large curvatures. The semiconducting and direct band gap nature are retained with buckling along the armchair direction; the band gap decreases and transforms to an indirect band gap with buckling along the zigzag direction. The structural flexibility and electronic robustness along the armchair direction facilitate the fabrication of devices with complex shapes, such as folded phosphorene and phosphorene nano-scrolls, thereby offering new possibilities for the application of phosphorene in flexible electronics and optoelectronics.

Anisotropic growth of buckling-driven wrinkles in graphene monolayer

We theoretically and numerically investigate the growth of buckling-driven wrinkles in graphene monolayers. It is found that the growth of buckling-driven wrinkles in a graphene monolayer is remarkably chirality- and size-dependent. In small sizes, the flexural response of a graphene sheet cannot be accurately described by the classical Euler regime, and the non-continuum effect leads to zigzag-along-preferred buckling. With the increase of size, the width/length ratio α of the compressed region plays an important role in the growth of buckling-driven wrinkles. When α < 0.5, the oblique buckling happens in armchair-along compression; when 0.5 < α < 1.0, the effect of edge warp leads to zigzag-along-preferred buckling. When 1.0 < α < 3.0, the potential energy density difference due to chiral bending stiffness leads to armchair-along-preferred buckling. When α > 3.0, the non-continuum effect and chiral bending stiffness can both be neglected, and the buckling in a graphene monolayer is isotropic. The chirality-along-preferred transition of compressed buckling in a graphene monolayer leads to an improved fundamental understanding of the dynamics mechanism of graphene-based nanodevices, especially for the nanodevices with high frequency response.

Direct imaging of atomic-scale ripples in few-layer graphene

Graphene has been touted as the prototypical two-dimensional solid of extraordinary stability and strength. However, its very existence relies on out-of-plane ripples as predicted by theory and confirmed by experiments. Evidence of the intrinsic ripples has been reported in the form of broadened diffraction spots in reciprocal space, in which all spatial information is lost. Here we show direct real-space images of the ripples in a few-layer graphene (FLG) membrane resolved at the atomic scale using monochromated aberration-corrected transmission electron microscopy (TEM). The thickness of FLG amplifies the weak local effects of the ripples, resulting in spatially varying TEM contrast that is unique up to inversion symmetry. We compare the characteristic TEM contrast with simulated images based on accurate first-principles calculations of the scattering potential. Our results characterize the ripples in real space and suggest that such features are likely common in ultrathin materials, even in the nanometer-thickness range.

A stable "flat" form of two-dimensional crystals: could graphene, silicene, germanene be minigap semiconductors?

The discovery of a flat two-dimensional crystal known as graphene has contradicted Landau-Peierls-Mermin-Wagner arguments that there is no stable flat form of such crystals. Here, we show that the "flat" shape of graphene arises due to a microscopic buckling at the smallest possible interatomic scale. We show that the graphene, silicene, and other two-dimensional crystals are stable due to transverse short-range displacements of appropriate atoms. The distortions are small and form various patterns, which we describe in a framework of Ising model with competing interactions. We show that when temperature decreases, two transitions, disorder into order and order into disorder, arise. The ordered state has a form of stripes where carbon atoms are shifted regularly with respect to the plane. The flat graphene, silicene, or germanene planes look like a microscopic "washboard" with the wavelength of about couple of interatomic spacing of appropriate sublattices, which for graphene is about 1.8-3.6 Å. At lower temperatures, the ordered state transforms into a glass. Because of up-down asymmetry in buckled graphene, silicene and other two-dimensional crystals deposited on substrate, a minibandgap may arise. We derive a criterion for the minigap formation and show how it is related to the buckling and to the graphene-substrate interaction. Because of the bandgap, there may arise new phenomena and in particular a rectification of ac current induced by microwave or infrared radiation. We show that the amplitude of direct current arising at wave mixing of two harmonics of microwave electromagnetic radiation is huge. Moreover, we predict the existence of miniexcitons and a new type of fermionic minipolaritons whose behavior can be controlled by the microwave and terahertz radiation.