Atomic-scale investigation of graphene grown on Cu foil and the effects of thermal annealing

Using Graphene-Based Composite Materials to Boost Anti-Corrosion and Infrared-Stealth Performance of Epoxy Coatings

Corrosion prevention and infrared (IR) stealth are conflicting goals. While graphene nanosheets (GN) provide an excellent physical barrier against corrosive agent diffusion, thus lowering the permeability of anti-corrosion coatings, they have the side-effect of decreasing IR stealth. In this work, the anti-corrosion properties of 100-μm-thick composite epoxy coatings with various concentrations (0.01–1 wt.%) of GN fillers thermally reduced at different temperatures (300 °C, 700 °C, 1100 °C) are first compared. The performance was characterized by potentiodynamic polarization scanning, electrochemical impedance spectroscopy, water contact angle and salt spray tests. The corrosion resistance for coatings was found to be optimum at a very low filler concentration (0.05 wt.%). The corrosion current density was 4.57 × 10⁻¹¹ A/cm² for GN reduced at 1100 °C, showing no degradation after 500 h of salt-spray testing: a significant improvement over the anti-corrosion behavior of epoxy coatings. Further, to suppress the high IR thermal signature of GN and epoxy, Al was added to the optimized composite at different concentrations. The increased IR emissivity due to GN was not only eliminated but was in fact reduced relative to the pure epoxy. These optimized coatings of Al-GN-epoxy not only exhibited greatly reduced IR emissivity but also showed no sign of corrosion after 500 h of salt spray test.

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

The alignment-dependent properties and applications of graphene moiré superstructures on the Ru(0001) surface

The moiré superstructure of graphene on a lattice-mismatched metal substrate has profound effects on the electronic properties of graphene and can be used for many applications. Here, we propose to systematically tune the moiré superstructure of graphene on the Ru(0001) surface by rotating the graphene layer. Our study reveals two kinds of graphene moiré superstructures: (i) the ultra-flat graphene layers with height variations of less than 0.1 Å for rotation angles greater than 20° that have the same structural and electronic properties everywhere, and (ii) the highly corrugated graphene moiré superstructures with height variations from 0.4 to 1.6 Å for rotation angles less than 20°, whose electronic properties are highly modulated by the interaction with the substrate. Moreover, these rotated graphene moiré superstructures can serve as templates to produce matrices of size-tunable metal clusters from a few to ∼100 atoms. This study reveals the causes of the structural fluctuation of moiré superstructures of graphene on the transition metal surface and suggests a pathway to tune graphene's electronic properties for various applications.

Time Evolution Studies on Strain and Doping of Graphene Grown on a Copper Substrate Using Raman Spectroscopy

The enhanced growth of Cu oxides underneath graphene grown on a Cu substrate has been of great interest to many groups. In this work, the strain and doping status of graphene, based on the gradual growth of Cu oxides from underneath, were systematically studied using time evolution Raman spectroscopy. The compressive strain to graphene, due to the thermal expansion coefficient difference between graphene and the Cu substrate, was almost released by the nonuniform Cu₂O growth; however, slight tensile strain was exerted. This induced p-doping in the graphene with a carrier density up to 1.7 × 10¹³ cm^-2 when it was exposed to air for up to 30 days. With longer exposure to ambient conditions (>1 year), we observed that graphene/Cu₂O hybrid structures significantly slow down the oxidation compared to that using a bare Cu substrate. The thickness of the CuO layer on the bare Cu substrate was increased to approximately 270 nm. These findings were confirmed through white light interference measurements and scanning electron microscopy.

Fabrication of vertical van der Waals gap array using single-and multi-layer graphene

Arrays of van der Waals gaps were manufactured by synthesizing the vertically aligned graphene layer stacked between two copper (Cu) catalytic films. The Cu-graphene-Cu laminated structure was obtained by directly synthesizing graphene on a patterned Cu film followed by depositing a second copper layer for optical measurements. The synthesis of graphene on the Cu surface was optimized by adjusting the synthesis temperatures and pre-annealing time using plasma enhanced chemical vapor deposition (PECVD). Resonant Raman spectroscopy measurements reveal that graphene can be synthesized on both bulk Cu foil and relatively thin Cu film under the same growth mechanism using PECVD. Structural and optical characterizations of the array of graphene van der Waals gaps were implemented by the transmission electron microscope and terahertz-time domain spectroscopy (THz-TDS). In THz-TDS, the measured THz amplitude transmitted through the graphene van der Waals gap slit array was constant regardless of the gap width determined by the number of graphene layers between the Cu thin films in a single slit. These results imply that the optical dielectric constant of graphene at THz frequencies in the out-of-plane direction is linearly proportional to the gap width. Our results of the manufacturing method can be adopted to investigate mechanical, electrical, and optical properties of other 2D materials such as h-BN, MoS₂, and others. Furthermore, metal-graphene-metal structures with vertical orientations can be used in many electronic, optic, and optoelectronic applications.

Suitable Surface Oxygen Concentration on Copper Contributes to the Growth of Large Graphene Single Crystals

In this Letter, we found that the growth of graphene on Cu oxide foil is significantly affected by the concentration of oxygen. The grain size of graphene grown on a Cu substrate with a relatively high oxygen concentration is much smaller than that on the substrate with lower oxygen concentration. By controlling the oxidation of the Cu substrate at a proper degree, we can obtain millimeter scale graphene single crystals at a growth temperature of 1050 °C. On the basis of our experimental observations, the dual role of oxygen in the CVD growth of graphene was revealed: (i) Oxygen on a Cu surface can contribute to the decomposition of hydrocarbon feedstock and decrease the graphene growth barrier, resulting in an increased growth rate and a larger grain size of graphene; (ii) excess oxygen in the Cu substrate leads to etching of the graphene edge. Our research provides insights to obtain large-area and single-crystalline graphene by choosing a proper Cu oxide substrate.

Thermodynamics and kinetics of an oxygen adatom on pristine and functionalized graphene: insight gained into their anticorrosion properties

The thermodynamic and kinetic stabilities of an O adatom on graphene are critical factors for the formation of oxide defects in graphene, which leads to the breakdown of a graphene protective coating.

Periodic ripples on thermally-annealed graphene on Cu (110)-reconstruction or moiré pattern?

We have used ultrahigh vacuum scanning tunneling microscopy (STM) to investigate the effect of thermal annealing of graphene grown by chemical vapor deposition on a Cu(110) foil. We show that the annealing appears to induce a reconstruction of the Cu surface along the [210] direction, with a period of 1.43 nm. Such reconstructions have been ascribed to the tensile strain induced in the Cu surface by its differential thermal expansion relative to the graphene over-layer, but we show that it is in fact a moiré pattern due to interference between the graphene and the underlying atomic lattice as evidenced by the appearance of an odd-even transition only observed due to misorientation of the top layer of a layered crystal. This highlights that the analysis of STM measurements of graphene on metal surfaces should take such interference effects into account and that the graphene-Cu interface is more complex than previously thought.

Inducing regioselective chemical reactivity in graphene with alkali metal intercalation

First principles calculations demonstrate that alkali metal atoms, intercalated between metal substrates and adsorbed graphene monolayers, induce localised regions of increased reactivity. The extent of this localisation is proportional to the size of the alkali atom and the strength of the graphene-substrate interaction. Thus, larger alkali atoms are more effective (e.g. K > Na > Li), as are stronger-interacting substrates (e.g. Ni > Cu). Despite the electropositivity of these alkali metal adsorbates, analysis of charge transfer between the alkali metal, the substrate and the adsorbed graphene layer indicates that charge transfer does not give rise to the observed regioselective reactivity. Instead, the increased reactivity induced in the graphene structure is shown to arise from the geometrical distortion of the graphene layer imposed by the intercalated adsorbed atom. We show that this strategy can be used with arbitrary adsorbates and substrate defects, provided such structures are stable, towards controlling the mesoscale patterning and chemical functionalisation of graphene structures.

How graphene crosses a grain boundary on the catalyst surface during chemical vapour deposition growth

The chemical vapour deposition (CVD) growth of graphene is normally an epitaxial process, where the atomic structure of the adlayer should copy the texture of the substrate. However, it has been widely observed that single crystalline graphene grown on metal foil may cross a grain boundary (GB) of the substrate without forming any line defect, a necessary condition to change its crystalline orientation and maintain the structure registry with the substrate on the other side of the GB. Here, we present a comprehensive theoretical study on graphene growth behavior on polycrystalline metal substrates. Our density functional theory (DFT) calculations reveal that for graphene growth on most metal surfaces, the binding energy difference between the epitaxial and non-epitaxial graphene on the substrate is not large enough to compensate for the formation energy of a GB in graphene and therefore, during the CVD process, the growing graphene can pass through a GB on the metal surface without changing its crystalline orientation. Hence, graphene CVD growth cannot be strictly regarded as an epitaxial process; this conclusion is further verified by atomic simulations. The present study shows that the growth of graphene on a metal catalyst surface should be regarded rather as a quasi-epitaxial process, where a graphene domain is aligned only on the single crystalline metal facet on which it nucleates, but this structural registry with the metal substrate may be lost when the graphene crosses a GB on the metal surface.

Suppression of Graphene Nucleation by Turning Off Hydrogen Supply Just before Atmospheric Pressure Chemical Vapor Deposition Growth

To exploit the extraordinary property of graphene in practical electrical and optical devices, it is necessary to produce large-sized, single-crystal graphene. Atmospheric pressure chemical vapor deposition (APCVD) on polycrystalline Cu surface is a promising scalable route of graphene synthesis but the unavoidable multiple nucleation limits their reachable domain size. Here, we report that effective suppression of nucleation was achieved by only turning off hydrogen supply before introduction of the carbon source for graphene growth. The density of graphene decreased from 72.0 to 2.2 domains/cm2 by turning off hydrogen for 15 min. X-ray photoelectron spectroscopy and Raman spectroscopy studies show that the Cu surface was covered with 3–4 nm thick highly crystalline Cu2O, which would be caused by oxidation by residual oxidative gasses in the chamber during the turning off period. It was also revealed that elevating the temperature in Ar followed by annealing in H2/Ar before turning off hydrogen led to the enlargement of the Cu domain, resulting in the further suppression of nucleation. By optimizing such growth parameters in the CVD process, a single-crystal graphene with ~2.6 mm in diameter was successfully obtained.

Understanding and Controlling Cu-Catalyzed Graphene Nucleation: The Role of Impurities, Roughness, and Oxygen Scavenging

The mechanism by which Cu catalyst pretreatments control graphene nucleation density in scalable chemical vapor deposition (CVD) is systematically explored. The intrinsic and extrinsic carbon contamination in the Cu foil is identified by time-of-flight secondary ion mass spectrometry as a major factor influencing graphene nucleation and growth. By selectively oxidizing the backside of the Cu foil prior to graphene growth, a drastic reduction of the graphene nucleation density by 6 orders of magnitude can be obtained. This approach decouples surface roughness effects and at the same time allows us to trace the scavenging effect of oxygen on deleterious carbon impurities as it permeates through the Cu bulk. Parallels to well-known processes in Cu metallurgy are discussed. We also put into context the relative effectiveness and underlying mechanisms of the most widely used Cu pretreatments, including wet etching and electropolishing, allowing a rationalization of current literature and determination of the relevant parameter space for graphene growth. Taking into account the wider CVD growth parameter space, guidelines are discussed for high-throughput manufacturing of "electronic-quality" monolayer graphene films with domain size exceeding 1 mm, suitable for emerging industrial applications, such as electronics and photonics.

Atomic resolution of nitrogen-doped graphene on Cu foils

Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.

Tunneling spectra of graphene on copper unraveled

Scanning tunneling spectroscopy is often employed to study two-dimensional (2D) materials on conductive growth substrates, in order to gain information on the electronic structures of the 2D material-substrate systems, which can lead to insight into 2D material-substrate interactions, growth mechanisms, etc. The interpretation of the spectra can be complicated, however. Specifically for graphene grown on copper, there have been conflicting reports of tunneling spectra. A clear understanding of the mechanisms behind the variability is desired. In this work, we have revealed that the root cause of the variability in tunneling spectra is the variation in graphene-substrate coupling under various experimental conditions, providing a salutary perspective on the important role of 2D material-substrate interactions. The conclusions are drawn from measured data and theoretical calculations for monolayer, AB-stacked bilayer, and twisted bilayer graphene coexisting on the same substrates in areas with and without intercalated oxygen, demonstrating a high degree of consistency. The Van Hove singularities of the twisted graphene unambiguously indicate the Dirac energy between them, lending strong evidence to our assignment of the spectral features. In addition, we have discovered an O-Cu superstructure that has never been observed before.

Bottom-up fabrication of graphene nanostructures on Ru(1010)

Investigations on the bottom-up fabrication of graphene nanostructures with 10, 10'-dibromo-9, 9'-bianthryl (DBBA) as a precursor on Ru(1010) were carried out using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. Upon annealing the sample at submonolayer DBBA coverage, N = 7 graphene nanoribbons (GNRs) aligned along the [1210] direction form. Higher DBBA coverage and higher annealing temperature lead to the merging of GNRs into ribbon-like graphene nanoflakes with multiple orientations. These nanoflakes show different Moiré patterns, and their structures were determined by DFT simulations. The results showed that GNRs possess growth preference on the Ru(1010) substrate with a rectangular unit cell, and GNRs with armchair and zigzag boundaries are obtainable. Further DFT calculations suggest that the interaction between graphene and the substrate controls the orientations of the graphene overlayer and the growth of graphene on Ru(1010).

Current-Driven Hydrogen Desorption from Graphene: Experiment and Theory

Electron-stimulated desorption of hydrogen from the graphene/SiC(0001) surface at room temperature was investigated with ultrahigh vacuum scanning tunneling microscopy and ab initio calculations in order to elucidate the desorption mechanisms and pathways. Two different desorption processes were observed. In the high electron energy regime (4-8 eV), the desorption yield is independent of both voltage and current, which is attributed to the direct electronic excitation of the C-H bond. In the low electron energy regime (2-4 eV), however, the desorption yield exhibits a threshold dependence on voltage, which is explained by the vibrational excitation of the C-H bond via transient ionization induced by inelastic tunneling electrons. The observed current independence of the desorption yield suggests that the vibrational excitation is a single-electron process. We also observed that the curvature of graphene dramatically affects hydrogen desorption. Desorption from concave regions was measured to be much more probable than desorption from convex regions in the low electron energy regime (∼2 eV), as would be expected from the identified desorption mechanism.

Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties

Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride (h-BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h-BN and graphene heterostructures are highlighted. Firstly, diverse synthesis approaches for in-plane h-BN and graphene (h-BN-G) heterostructures are reviewed, and their applications in nanoelectronics are briefly introduced. Moreover, the interfacial structures and electronic properties of h-BN-G heterojunctions are discussed, and a zigzag type interface is found to preferentially evolve at the linking edge of the two structural analogues. Secondly, several synthetic routes for the vertically-stacked graphene/h-BN (G/h-BN) heterostructures are also reviewed. The role of h-BN as perfect dielectric layers in promoting the device performance of graphene is presented. Finally, future research directions in the synthesis and application of such heterostructures are discussed.

Temperature Evolution of Quasi-one-dimensional C60 Nanostructures on Rippled Graphene

We report the preparation of novel quasi-one-dimensional (quasi-1D) C60 nanostructures on rippled graphene. Through careful control of the subtle balance between the linear periodic potential of rippled graphene and the C60 surface mobility, we demonstrate that C60 molecules can be arranged into a quasi-1D C60 chain structure with widths of two to three molecules. At a higher annealing temperature, the quasi-1D chain structure transitions to a more compact hexagonal close packed quasi-1D stripe structure. This first experimental realization of quasi-1D C60 structures on graphene may pave a way for fabricating new C60/graphene hybrid structures for future applications in electronics, spintronics and quantum information.

Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode

Transparent conducting film occupies an important position in various optoelectronic devices. To replace the costly tin-doped indium oxide (ITO), promising materials, such as metal nanowires and graphene, have been widely studied. Moreover, a long-pursued goal is to consolidate these two materials together and express their outstanding properties simultaneously. We successfully achieved a direct 3D coating of a graphene layer on an interlacing Cu nanosilks network by the low pressure chemical vapor deposition method. High aspect ratio Cu nanosilks (13 nm diameter with 40 μm length) were synthesized through the nickel ion catalytic process. Large-size, transparent conducting film was successfully fabricated with Cu nanosilks ink by the imprint method. A magnetic manipulator equipped with a copper capsule was used to produce high Cu vapor pressure on Cu nanosilks and realize the graphene 3D-coating. The coated Cu@graphene nanosilks network achieved high transparency, low sheet resistance (41 Ohm sq(-1) at 95% transmittance) and robust antioxidant ability. With this technique, the transfer process of graphene is no longer needed, and a flexible, uniform and high-performance transparent conducting film could be fabricated in unlimited size.

The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition

The influence of various Cu lattices on the texturing of graphene domains during low-pressure chemical vapor deposition was investigated in a large area. The results show that the sizes and shapes of graphene domains grown on Cu(111) substrates match well with those of the underlying Cu(111) domains, which seem to be quasi-single-crystalline. In contrast, on other Cu substrates such as (100) and more intermediate domains, graphene islands with poly-domains (ca. 85 %) are significantly nucleated, eventually merging into polycrystalline graphene. Within the overall channel-length range, graphene from a Cu foil shows a higher resistance compared to graphene from a Cu(111) domain, with the extracted average channel resistances being 34.51 Ω μm(-1) for Cu(111) and 66.17 Ω μm(-1) for the Cu foil.

Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moiré patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics.

Targeted synthesis of vertically stacked graphene (G) and hexagonal boron nitride (h-BN) heterostructures remains a challenge. Here, the authors achieve the selective, CVD growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction.

Suppressing bacterial interaction with copper surfaces through graphene and hexagonal-boron nitride coatings

Understanding biological interaction with graphene and hexagonal-boron nitride (h-BN) membranes has become essential for the incorporation of these unique materials in contact with living organisms. Previous reports show contradictions regarding the bacterial interaction with graphene sheets on metals. Here, we present a comprehensive study of the interaction of bacteria with copper substrates coated with single-layer graphene and h-BN. Our results demonstrate that such graphitic coatings substantially suppress interaction between bacteria and underlying Cu substrates, acting as an effective barrier to prevent physical contact. Bacteria do not "feel" the strong antibacterial effect of Cu, and the substrate does not suffer biocorrosion due to bacteria contact. Effectiveness of these systems as barriers can be understood in terms of graphene and h-BN impermeability to transfer Cu(2+) ions, even when graphene and h-BN domain boundary defects are present. Our results seem to indicate that as-grown graphene and h-BN films could successfully protect metals, preventing their corrosion in biological and medical applications.

Unusual role of epilayer-substrate interactions in determining orientational relations in van der Waals epitaxy

Using selected-area low-energy electron diffraction analysis, we showed strict orientational alignment of monolayer hexagonal boron nitride (h-BN) crystallites with Cu(100) surface lattices of Cu foil substrates during atmospheric pressure chemical vapor deposition. In sharp contrast, the graphene-Cu(100) system is well-known to assume a wide range of rotations despite graphene's crystallographic similarity to h-BN. Our density functional theory calculations uncovered the origin of this surprising difference: The crystallite orientation is determined during nucleation by interactions between the cluster's edges and the substrate. Unlike the weaker B- and N-Cu interactions, strong C-Cu interactions rearrange surface Cu atoms, resulting in the aligned geometry not being a distinct minimum in total energy. The discovery made in this specific case runs counter to the conventional wisdom that strong epilayer-substrate interactions enhance orientational alignment in epitaxy and sheds light on the factors that determine orientational relation in van der Waals epitaxy of 2D materials.

Photoelectron spectroscopy of wet and gaseous samples through graphene membranes

Photoelectron spectroscopy (PES) and microscopy are highly important for exploring morphologically and chemically complex liquid-gas, solid-liquid and solid-gas interfaces under realistic conditions, but the very small electron mean free path inside dense media imposes serious experimental challenges. Currently, near ambient pressure PES is conducted using dexterously designed electron energy analyzers coupled with differentially pumped electron lenses which make it possible to conduct PES measurements at a few hPa. This report proposes an alternative ambient pressure approach that can be applied to a broad class of samples and be implemented in conventional PES instruments. It uses ultrathin electron transparent but molecular impermeable membranes to isolate the high pressure sample environment from the high vacuum PES detection system. We demonstrate that the separating graphene membrane windows are both mechanically robust and sufficiently transparent for electrons in a wide energy range to allow soft X-ray PES of liquid and gaseous water. The performed proof-of-principle experiments confirm the possibility to probe vacuum-incompatible toxic or reactive samples placed inside such hermetic, gas flow or fluidic environmental cells.

Cooperative island growth of large-area single-crystal graphene on copper using chemical vapor deposition

In this work we explore the kinetics of single-crystal graphene growth as a function of nucleation density. In addition to the standard methods for suppressing nucleation of graphene by pretreatment of Cu foils using oxidation, annealing, and reduction of the Cu foils prior to growth, we introduce a new method that further reduces the graphene nucleation density by interacting directly with the growth process at the onset of nucleation. The successive application of these two methods results in roughly 3 orders of magnitude reduction in graphene nucleation density. We use a kinetic model to show that at vanishingly low nucleation densities carbon incorporation occurs by a cooperative island growth mechanism that favors the formation of substrate-size single-crystal graphene. The model reveals that the cooperative growth of millimeter-size single-crystal graphene grains occurs by roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random island nucleation.

Construction of 2D atomic crystals on transition metal surfaces: graphene, silicene, and hafnene

The synthesis and structures of graphene on Ru(0001) and Pt(111), silicene on Ag(111) and Ir(111) and the honeycomb hafnium lattice on Ir(111) are reviewed. Epitaxy on a transition metal (TM) substrate is a pro-mising method to produce a variety of two dimensional (2D) atomic crystals which potentially can be used in next generation electronic devices. This method is particularly valuable in the case of producing 2D materials that do not exist in 3D forms, for instance, silicene. Based on the intensive investigations of epitaxial graphene on TM in recent years, it is known that the quality of graphene is affected by many factors, including the interaction between the 2D material overlayer and the substrate, the lattice mismatch, the nucleation density at the early stage of growth. It is found that these factors also apply to many other epitaxial 2D crystals on TM. The knowledge from the reviewed systems will shine light on the design and synthesis of new 2D crystals with novel properties.

Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition

Single asperity friction experiments using atomic force microscopy (AFM) have been conducted on chemical vapor deposited (CVD) graphene grown on polycrystalline copper foils. Graphene substantially lowers the friction force experienced by the sliding asperity of a silicon AFM tip compared to the surrounding oxidized copper surface by a factor ranging from 1.5 to 7 over loads from the adhesive minimum up to 80 nN. No damage to the graphene was observed over this range, showing that friction force microscopy serves as a facile, high contrast probe for identifying the presence of graphene on Cu. Consistent with studies of epitaxially grown, thermally grown, and mechanically exfoliated graphene films, the friction force measured between the tip and these CVD-prepared films depends on the number of layers of graphene present on the surface and reduces friction in comparison to the substrate. Friction results on graphene indicate that the layer-dependent friction properties result from puckering of the graphene sheet around the sliding tip. Substantial hysteresis in the normal force dependence of friction is observed with repeated scanning without breaking contact with a graphene-covered region. Because of the hysteresis, friction measured on graphene changes with time and maximum applied force, unless the tip slides over the edge of the graphene island or contact with the surface is broken. These results also indicate that relatively weak binding forces exist between the copper foil and these CVD-grown graphene sheets.

Use of graphene as protection film in biological environments

Corrosion of metal in biomedical devices could cause serious health problems to patients. Currently ceramics coating materials used in metal implants can reduce corrosion to some extent with limitations. Here we proposed graphene as a biocompatible protective film for metal potentially for biomedical application. We confirmed graphene effectively inhibits Cu surface from corrosion in different biological aqueous environments. Results from cell viability tests suggested that graphene greatly eliminates the toxicity of Cu by inhibiting corrosion and reducing the concentration of Cu²⁺ ions produced. We demonstrated that additional thiol derivatives assembled on graphene coated Cu surface can prominently enhance durability of sole graphene protection limited by the defects in graphene film. We also demonstrated that graphene coating reduced the immune response to metal in a clinical setting for the first time through the lymphocyte transformation test. Finally, an animal experiment showed the effective protection of graphene to Cu under in vivo condition. Our results open up the potential for using graphene coating to protect metal surface in biomedical application.

Effect of post-annealing on the plasma etching of graphene-coated-copper

High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas.

On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressure

We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical curvilinear graphene domains specifically on Cu{100} surface orientations at atmospheric pressure. We utilize electron backscattered diffraction, scanning electron microscopy and Raman spectroscopy to determine an as-yet unexplored growth mode producing such a shape and demonstrate how its growth and morphology are dependent on the underlying Cu crystal structure especially in the high CH4:H2 regime. We show that both monolayer and bilayer curvilinear domains are grown on Cu{100} surfaces; furthermore, we show that characteristic atmospheric pressure CVD hexagonal domains are grown on all other Cu facets with an isotropic growth rate which is more rapid than that on Cu{100}. These findings indicate that the Cu-graphene complex is predominant mechanistically at atmospheric pressure, which is an important step towards tailoring graphene properties via substrate engineering.

Temperature-driven reversible rippling and bonding of a graphene superlattice

In order to unravel the complex interplay between substrate interactions and film configuration, we investigate and characterize graphene on a support with non-three-fold symmetry, the square Ir(100). Below 500 °C, distinct physisorbed and chemisorbed graphene phases coexist on the surface, respectively characterized by flat and buckled morphology. They organize into alternating domains that extend on mesoscopic lengths, relieving the strain due to the different thermal expansion of film and substrate. The chemisorbed phase exhibits exceptionally large one-dimensional ripples with regular nanometer periodicity and can be reversibly transformed into physisorbed graphene in a temperature-controlled process that involves surprisingly few C-Ir bonds. The formation and rupture of these bonds, rather than ripples or strain, are found to profoundly alter the local electronic structure, changing graphene behavior from semimetal to metallic type. The exploitation of such subtle interfacial changes opens new possibilities for tuning the properties of this unique material.

Influence of gas phase equilibria on the chemical vapor deposition of graphene

We have investigated the influence of gas phase chemistry on the chemical vapor deposition of graphene in a hot wall reactor. A new extended parameter space for graphene growth was defined through literature review and experimentation at low pressures (≥0.001 mbar). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy, and dark field optical microscopy, with the latter showing promise as a rapid and nondestructive characterization technique for graphene films. The equilibrium gas compositions have been calculated across this parameter space. Correlations between the graphene films grown and prevalent species in the equilibrium gas phase revealed that deposition conditions associated with a high acetylene equilibrium concentration lead to good quality graphene deposition, and conditions that stabilize large hydrocarbon molecules in the gas phase result in films with multiple defects. The transition between lobed and hexagonal graphene islands was found to be linked to the concentration of the monatomic hydrogen radical, with low concentrations associated with hexagonal islands.

Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe

We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.

Graphene coatings: probing the limits of the one atom thick protection layer

The limitations of graphene as an effective corrosion-inhibiting coating on metal surfaces, here exemplified by the hex-reconstructed Pt(100) surface, are probed by scanning tunneling microscopy measurements and density functional theory calculations. While exposure of small molecules directly onto the Pt(100) surface will lift the reconstruction, a single graphene layer is observed to act as an effective coating, protecting the reactive surface from O(2) exposure and thus preserving the reconstruction underneath the graphene layer in O(2) pressures as high as 10(-4) mbar. A similar protective effect against CO is observed at CO pressures below 10(-6) mbar. However, at higher pressures CO is observed to intercalate under the graphene coating layer, thus lifting the reconstruction. The limitations of the coating effect are further tested by exposure to hot atomic hydrogen. While the coating can withstand these extreme conditions for a limited amount of time, after substantial exposure, the Pt(100) reconstruction is lifted. Annealing experiments and density functional theory calculations demonstrate that the basal plane of the graphene stays intact and point to a graphene-mediated mechanism for the H-induced lifting of the reconstruction.

Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene

For electronic applications, synthesis of large-area, single-layer graphene with high crystallinity is required. One of the most promising and widely employed methods is chemical vapor deposition (CVD) using Cu foil/film as the catalyst. However, the CVD graphene is generally polycrystalline and contains a significant amount of domain boundaries that limit intrinsic physical properties of graphene. In this Perspective, we discuss the growth mechanism of graphene on a Cu catalyst and review recent development in the observation and control of the domain structure of graphene. We emphasize the importance of the growth condition and crystallinity of the Cu catalyst for the realization of large-area, single-crystalline graphene.

Graphene induced surface reconstruction of Cu

An atomic-scale study utilizing scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV) is performed on large single crystalline graphene grains synthesized on Cu foil by a chemical vapor deposition (CVD) method. After thermal annealing, we observe the presence of periodic surface depressions (stripe patterns) that exhibit long-range order formed in the area of Cu covered by graphene. We suggest that the observed stripe pattern is a Cu surface reconstruction formed by partial dislocations (which appeared to be stair-rod-like) resulting from the strain induced by the graphene overlayer. In addition, these graphene grains are shown to be more decoupled from the Cu substrate compared to previously studied grains that exhibited Moiré patterns.

Nanoscale chemical imaging of single-layer graphene

Electronic properties in different graphene materials are influenced by the presence of defects and their relative position with respect to the edges. Their localization is crucial for the reliable development of graphene-based electronic devices. Graphene samples produced by standard CVD on copper and by the scotch-tape method on gold were investigated using tip-enhanced Raman spectroscopy (TERS). A resolution of <12 nm is reached using TERS imaging with full spectral information in every pixel. TERS is shown to be capable of identifying defects, contaminants, and pristine graphene due to their different spectroscopic signatures, and of performing chemical imaging. TERS allows the detection of smaller defects than visible by confocal Raman microscopy and a far more precise localization. Consecutive scans on the same sample area show the reproducibility of the measurements, as well as the ability to zoom in from an overview scan onto specific sample features. TERS images can be acquired in as few as 5 min with 32 × 32 pixels. Compared to confocal Raman microscopy, a high sensitivity for defects, edges, hydrogen-terminated areas or contaminated areas (in general for deviations from the two-dimensional structure of pristine graphene) is obtained due to selective enhancement as a consequence of the orientation in the electromagnetic field.

Direct imaging of graphene edges: atomic structure and electronic scattering

We report an atomically resolved scanning tunneling microscopy investigation of the edges of graphene grains synthesized on Cu foils by chemical vapor deposition. Most of the edges are macroscopically parallel to the zigzag directions of graphene lattice. These edges have microscopic roughness that is found to also follow zigzag directions at atomic scale, displaying many ∼120° turns. A prominent standing wave pattern with periodicity ∼3a/4 (a being the graphene lattice constant) is observed near a rare-occurring armchair-oriented edge. Observed features of this wave pattern are consistent with the electronic intervalley backscattering predicted to occur at armchair edges but not at zigzag edges.