Spectroscopic imaging of photopotentials and photoinduced potential fluctuations in a bulk heterojunction solar cell film

Surface photovoltage microscopy for mapping charge separation on photocatalyst particles

Solar-driven photocatalytic reactions offer a promising route to clean and sustainable energy, and the spatial separation of photogenerated charges on the photocatalyst surface is the key to determining photocatalytic efficiency. However, probing the charge-separation properties of photocatalysts is a formidable challenge because of the spatially heterogeneous microstructures, complicated charge-separation mechanisms and lack of sensitivity for detecting the low density of separated photogenerated charges. Recently, we developed surface photovoltage microscopy (SPVM) with high spatial and energy resolution that enables the direct mapping of surface-charge distributions and quantitative assessment of the charge-separation properties of photocatalysts at the nanoscale, potentially providing unprecedented insights into photocatalytic charge-separation processes. Here, this protocol presents detailed procedures that enable researchers to construct the SPVM instruments by integrating Kelvin probe force microscopy with an illumination system and the modulated surface photovoltage (SPV) approach. It then describes in detail how to perform SPVM measurements on actual photocatalyst particles, including sample preparation, tuning of the microscope, adjustment of the illuminated light path, acquisition of SPVM images and measurements of spatially resolved modulated SPV signals. Moreover, the protocol also includes sophisticated data analysis that can guide non-experts in understanding the microscopic charge-separation mechanisms. The measurements are ordinarily performed on photocatalysts with a conducting substrate in gases or vacuum and can be completed in 15 h.

Charge Carrier Inversion in a Doped Thin Film Organic Semiconductor Island

Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is exhibiting n-doped like response. The source of the additional charges in the pentacene island can be identified by charging rings in the dissipation channel of the noncontact atomic force microscopy (AFM) signal, a typical signature for localized charge transfer from the AFM tip to the sample. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20 nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.

Functional Scanning Force Microscopy for Energy Nanodevices

Energy nanodevices, including energy conversion and energy storage devices, have become a major cross-disciplinary field in recent years. These devices feature long-range electron and ion transport coupled with chemical transformation, which call for novel characterization tools to understand device operation mechanisms. In this context, recent developments in functional scanning force microscopy techniques and their application in thin-film photovoltaic devices and lithium batteries are reviewed. The advantages of scanning force microscopy, such as high spatial resolution, multimodal imaging, and the possibility of in situ and in operando imaging, are emphasized. The survey indicates that functional scanning force microscopy is making significant contributions in understanding materials and interfaces in energy nanodevices.

Imaging photogenerated charge carriers on surfaces and interfaces of photocatalysts with surface photovoltage microscopy

Recent advances in imaging and characterizing charge separation on surfaces and interfaces of photocatalysts by surface photovoltage spectroscopy were reviewed and highlighted.

Microsecond photocapacitance transients observed using a charged microcantilever as a gated mechanical integrator

How light is converted to electricity in blends of organic donor and acceptor molecules is an unsettled question, partly because the spatial heterogeneity present in these blends makes them challenging to characterize. Although scanned-probe measurements have provided crucially important microscopic insights into charge generation and transport in these blends, achieving the subnanosecond time resolution needed to directly observe the fate of photogenerated charges has proven difficult. We use a charged microcantilever as a gated mechanical integrator to record photocapacitance indirectly by measuring the accumulated change in cantilever phase as a function of the time delay between precisely synchronized voltage and light pulses. In contrast with previous time-resolved scanned-probe photocapacitance measurements, the time resolution of this method is set by the rise and fall time of the voltage and light pulses and not by the inverse detection bandwidth. We demonstrate in an organic donor-acceptor blend the ability of this indirect, "phase-kick" technique to record multiexponential photocapacitance transients on time scales ranging from 40 μs to 10 ms. The technique's ability to measure subcycle, nanosecond charge dynamics is demonstrated by measuring the tens of nanosecond sample electrical charging time.

Imaging Charge Transfer State Excitations in Polymer/Fullerene Solar Cells with Time-Resolved Electrostatic Force Microscopy

We demonstrate nanoscale imaging of charge transfer state photoexcitations in polymer/fullerene bulk heterojunction solar cells using time-resolved electrostatic force microscopy (trEFM). We compare local trEFM charging rates and external quantum efficiencies (EQE) for both above-gap and below-gap excitation of the model system poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM). We show that the local trEFM charging rate correlates with device EQE for both above-gap and below-gap photoexcitation, demonstrating that EFM methods have sufficient sensitivity to detect the low EQEs associated with CT state formation, a result that could be useful for probing weak subgap excitations in nanostructured materials such as quantum dot and organometal halide perovskite solar cells. Further, we use trEFM to map spatial variations in EQE arising from subgap CT excitation in organic photovoltaics (OPVs) and find that the local distribution of photocurrent arising from these states is nearly identical to the spatial variation in EQE from above-gap singlet excitation. These results are consistent with recent work showing that both above-gap and below-gap excitation have similar internal quantum efficiency.

Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures

Monolayer transition metal dichalcogenides (TMDs) and their van der Waals heterostructures have been experimentally and theoretically demonstrated as potential candidates for photovoltaic and optoelectronic devices due to the suitable bandgap and excellent light absorption. In this work, we report the observation of photodiode behavior in (both n- and p- type) silicon/monolayer MoS2 vertical heterostructures. The photocurrent and photoresponsivity of heterostructures photodiodes were dependent both on the incident light wavelength and power density, and the highest photoresponsivity of 7.2 A/W was achieved in n-Si/monolayer MoS2 vertical heterostructures photodiodes. Compared with n-Si/MoS2 heterostructures, the photoresponsivity of p-Si/MoS2 heterostructure was much lower. Kelvin probe microscope (KFM) results demonstrated the more efficient separation of photogenerated excitons in n-Si/MoS2 than that in p-Si/MoS2. Coupling KFM results with band alignments of (p-, n-) Si/MoS2 heterostructures, the origins of photodiode-like phenomena of p-Si/MoS2 and n-Si/MoS2 have been unveiled, that is intrinsic built-in electric field in p-n junction, and modulated barrier height and width at the interface in n-n junction. Our work may benefit to the deep understanding of the integration of two-dimensional materials with more conventional three-dimensional semiconductors, and then contribute to the developments in the area of van der Waals heterostructures.

Mapping orientational order in a bulk heterojunction solar cell with polarization-dependent photoconductive atomic force microscopy

New methods connecting molecular structure, self-organization, and optoelectronic performance are important for understanding the current generation of organic photovoltaic (OPV) materials. In high power conversion efficiency (PCE) OPVs, light-harvesting small-molecules or polymers are typically blended with fullerene derivatives and deposited in thin films, forming a bulk heterojunction (BHJ), a self-assembled three-dimensional nanostructure of electron donors and acceptors that separates and transports charges. Recent data suggest micrometer-scale orientational order of donor domains exists within this complex nanomorphology, but the link to the optoelectronic properties is yet unexplored. Here we introduce polarization-dependent, photoconductive atomic force microscopy (pd-pcAFM) as a combined probe of orientational order and nanoscale optoelectronic properties (∼20 nm resolution). Using the donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl[2,2'-bithiophen]-5-yl)benzo[c][1,2,5]thiadiazole), p-DTS(FBTTh2)2, we show significant spatial dependence of the nanoscale photocurrent with polarized light in both pristine and BHJ blends (up to 7.0% PCE) due to the local alignment of the molecular transition dipoles. By mapping the polarization dependence of the nanoscale photocurrent, we estimate the molecular orientation and orientational order parameter. Liquid crystalline disclinations are observed in all films, in agreement with complementary electron microscopy experiments, and the order parameter exceeds 0.3. The results demonstrate the utility of pd-pcAFM to investigate the optical/structural anisotropy that exists within a well-performing BHJ system and its relationship to optoelectronic properties on both the nanometer and micrometer length scales.

In situ KPFM imaging of local photovoltaic characteristics of structured organic photovoltaic devices

Here, we discuss the local photovoltaic characteristics of a structured bulk heterojunction, organic photovoltaic devices fabricated with a liquid carbazole, and a fullerene derivative based on analysis by scanning kelvin probe force microscopy (KPFM). Periodic photopolymerization induced by an interference pattern from two laser beams formed surface relief gratings (SRG) in the structured films. The surface potential distribution in the SRGs indicates the formation of donor and acceptor spatial distribution. Under illumination, the surface potential reversibly changed because of the generation of fullerene anions and hole transport from the films to substrates, which indicates that we successfully imaged the local photovoltaic characteristics of the structured photovoltaic devices. Using atomic force microscopy, we confirmed the formation of the SRG because of the material migration to the photopolymerized region of the films, which was induced by light exposure through photomasks. The structuring technique allows for the direct fabrication and the control of donor and acceptor spatial distribution in organic photonic and electronic devices with minimized material consumption. This in situ KPFM technique is indispensable to the fabrication of nanoscale electron donor and electron acceptor spatial distribution in the devices.