Optically abrupt localized surface plasmon resonances in si nanowires by mitigation of carrier density gradients

Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures

Peculiar scenarios in the dynamics of BCC and FCC 1D-nanostructures leading to the formation of ultra-short, and sometimes stable, high-amplitude surface modulations are analysed and the means of achieving the desired periodicity are discussed.

Enhancing Detection Sensitivity of ZnO-Based Infrared Plasmonic Sensors Using Capped Dielectric Ga2O3 Layers for Real-Time Monitoring of Biological Interactions

Surface plasmon resonances on Ga-doped ZnO (ZnO/Ga) layer surfaces (ZnO-SPRs) have attracted substantial attention as alternative plasmonic materials in the infrared range. We present further enhancement of the detection limits of ZnO-SPRs to monitor biological interactions by introducing thin dielectric layers into ZnO-SPRs, which remarkably modify the electric fields and the corresponding decay lengths on the sensing surfaces. The presence of a high-permittivity dielectric layer of Ga₂O₃ provides high wavelength sensitivities of the ZnO-SPRs due to the strongly confined electric fields. The superior sensing capabilities of the proposed samples were verified by real-time monitoring of the biological interactions between biotin and streptavidin molecules. Introduction of the high-permittivity dielectric layer into ZnO-SPRs effectively enhances the detection sensitivity and therefore allowed for the observation of biological interactions. This paper provides useful information for the development of optical detection techniques for use in biological fields based on ZnO from the viewpoints of plasmonic applications.

Tailorable Dynamics in Nonlinear Optical Metasurfaces

Controlling light with light is essential for all-optical switching, data processing in optical communications and computing. Until now, all-optical control of light has relied almost exclusively on nonlinear optical interactions in materials. Achieving giant nonlinearities under low light intensity is essential for weak-light nonlinear optics. In the past decades, such weak-light nonlinear phenomena have been demonstrated in photorefractive and photochromic materials. However, their bulky size and slow speed have hindered practical applications. Metasurfaces, which enhance light-matter interactions at the nanoscale, provide a new framework with tailorable nonlinearities for weak-light nonlinear dynamics. Current advances in nonlinear metasurfaces are introduced, with a special emphasis on all-optical light controls. The tuning of the nonlinearity values using metasurfaces, including enhancement and sign reversal is presented. The tailoring of the transient behaviors of nonlinearities in metasurfaces to achieve femtosecond switching speed is also discussed. Furthermore, the impact of quantum effects from the metasurface on the nonlinearities is introduced. Finally, an outlook on the future development of this energetic field is offered.

Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles

Efficient characterization of semiconductor nanowires having complex dopant profiles or heterostructures is critical to fully understand these materials and the devices built from them. Existing electrical characterization techniques are slow and laborious, particularly for multisegment nanowires, and impede the statistical understanding of highly variable samples. Here, it is shown that electro-orientation spectroscopy (EOS)-a high-throughput, noncontact method for statistically characterizing the electrical properties of entire nanowire ensembles-can determine the conductivity and dimensions of two distinct segments in individual Si nanowires with axially encoded dopant profiles. This analysis combines experimental measurements and computational simulations to determine the electrical conductivity of the nominally undoped segment of two-segment Si nanowires, as well as the ratio of the segment lengths. The efficacy of this approach is demonstrated by comparing results generated by EOS with conventional four-point-probe measurements. This work provides new insights into the control and variability of semiconductor nanowires for electronic applications and is a critical first step toward the high-throughput interrogation of complete nanowire-based devices.

Interplay of Surface Recombination and Diode Geometry for the Performance of Axial p-i-n Nanowire Solar Cells

Nanowires (NWs) with axial p-i-n junctions have been widely explored as microscopic diodes for optoelectronic and solar energy applications, and their performance is strongly influenced by charge recombination at the surface. We delineate how the photovoltaic performance of these diodes is dictated not only by the surface but also by the complex and seemingly counterintuitive interplay of diode geometry, that is, radius ( R) and intrinsic length ( L_i), with the surface recombination velocity ( S). An analytical model to describe these relationships is developed and compared to finite-element simulations, which verify the accuracy and limitations of the model. The dependence of the dark saturation current ( I₀), internal quantum efficiency (IQE), short-circuit current ( I_SC), and open-circuit voltage ( V_OC) on both geometric and recombination parameters demonstrates that no single set of parameters produces optimal performance; instead, various trade-offs in performance are observed. For instance, longer L_i might be expected to produce higher I_SC, yet at high values of S the I_SC declines because of decreases in IQE. Moreover, longer L_i produces a concurrent decline in V_OC regardless of S due to increases in I₀. We also find that I_SC and V_OC trends are radius independent, yet I₀ is directly proportional to R, causing NWs with smaller R to display higher turn-on voltages. The analysis regarding the interplay of these parameters, verified by experimental measurements with various p-i-n geometries and surface treatments, provides clear guidance for the rational design of performance metrics for photodiode and photovoltaic devices.

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control. In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs. Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials. We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures and crystal structures that predominate and quantum effects that emerge at nonclassical sizes. We will also emphasize the impact of dopant hybridization with bands of the host lattice as well as the interplay of shape and crystal structure in determining the LSPR characteristics of semiconductor NCs. To illustrate the discussion regarding both physical and synthetic aspects of LSPR-active NCs, we will focus on metal oxides with substantial consideration also of copper chalcogenide NCs, with select examples drawn from the literature on other doped semiconductor materials. Furthermore, we will discuss the promise that LSPR in doped semiconductor NCs holds for a wide range of applications such as infrared spectroscopy, energy-saving technologies like smart windows and waste heat management, biomedical applications including therapy and imaging, and optical applications like two photon upconversion, enhanced luminesence, and infrared metasurfaces.

Atomic-Scale Choreography of Vapor-Liquid-Solid Nanowire Growth

Functional materials and devices require nanoscale control of morphology, crystal structure, and composition. Vapor-liquid-solid (VLS) crystal growth and its related growth modes enable the synthesis of 1D nanostructures, commonly called "nanowires", where the necessary nanoscale heterogeneity can be encoded axially. During the VLS process, a seed particle collects atoms and directs the nucleation of crystalline material. Modulating the delivery of growth species or conditions permits compositional and/or structural encoding. A range of materials and devices (e.g., for electronics, photonics, thermal transport, and bioprobes) have been produced by VLS growth, but plenty of challenges remain: many desirable structures cannot currently be made, and even for those structures that can be made, the parameter window-in terms of, e.g., temperatures and pressures-is often narrow. Moreover, we are quite far from ab initio determination of which growth conditions should be used or even if a desired structure is fundamentally achievable within the VLS framework. To fully understand the challenges and promises of VLS growth, the governing physicochemical processes must be explored and understood at the atomic scale. This final level of detail is being unraveled with the help of in situ characterization techniques. The picture that is emerging is of a highly dynamical process with several deeply interconnected and highly fundamental components that are difficult to detect with postgrowth ex situ interrogation. For example, recent in situ microscopy and spectroscopy studies have shown that the growth front can undergo cyclical reshaping involving dissolution as well as crystallization and that the state of the nanowire surface, which changes with growth conditions as a result of a competition between adsorption and desorption of passivating species, plays a crucial role in determining the transport to/from and the stability of the seed particle. The available in situ observations currently constitute a somewhat disparate list, but if they can be connected to each other and to the outstanding challenges, they promise meaningful advances in our understanding of VLS growth. In this Account, we review the state of the art regarding the atomic-scale thermodynamic and kinetic phenomena that control VLS growth. Rather than cataloging all of the outstanding contributions to the field, we give priority to in situ observations that have revealed unexpected effects as well as those that hint at incongruities in our current knowledge. As such, our discussion should be viewed as an opportunity to gain deeper understanding and control of the fundamental processes at play, which will be crucial in future scale-up efforts and expansion to completely new materials systems and application areas.

Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices

Although silicon (Si) nanowires (NWs) grown by a vapor-liquid-solid (VLS) mechanism have been demonstrated for a range of photonic, electronic, and solar-energy applications, continued progress with these NW-based technologies requires increasingly precise compositional and morphological control of the growth process. However, VLS growth typically encounters problems such as nonselective deposition on sidewalls, inadvertent kinking, unintentional or inhomogeneous doping, and catalyst-induced compositional gradients. Here, we overcome several of these difficulties and report the synthesis of uniform, linear, and degenerately doped Si NW superlattices with abrupt transitions between p-type, intrinsic, and n-type segments. The synthesis of these structures is enabled by in situ chlorination of the NW surface with hydrochloric acid (HCl) at temperatures ranging from 500 to 700 °C, yielding uniform NWs with minimal nonselective growth. Surprisingly, we find the boron (B) doping level in p-type segments to be at least 1 order of magnitude above the solid solubility limit, an effect that we attribute to a high incorporation of B in the liquid catalyst and kinetic trapping of B during crystallization at the liquid-solid interface to yield a highly nonequilibrium concentration. For growth at 510 °C, four-point-probe measurements yield active doping levels of at least 4.5 × 10¹⁹ cm^-3, which is comparable to the phosphorus (P) doping level of n-type segments. Because the B and P dopants are in sufficiently high concentrations for the Si to be degenerately doped, both segments inhibit the etching of Si in aqueous potassium hydroxide (KOH) solution. Moreover, we find that the dopant transitions are abrupt, facilitating nanoscale morphological control in both B- and P-doped segments through selective KOH etching of the NW with a spatial resolution of ∼10 nm. The results presented herein enable the growth of complex, degenerately doped p-n junction nanostructures that can be explored for a variety of advanced applications, such as Esaki diodes, multijunction solar cells, and tunneling field-effect transistors.

Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface

Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent ⟨112⟩ directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

Process Principles for Large-Scale Nanomanufacturing

Nanomanufacturing—the fabrication of macroscopic products from well-defined nanoscale building blocks—in a truly scalable and versatile manner is still far from our current reality. Here, we describe the barriers to large-scale nanomanufacturing and identify routes to overcome them. We argue for nanomanufacturing systems consisting of an iterative sequence of synthesis/assembly and separation/sorting unit operations, analogous to those used in chemicals manufacturing. In addition to performance and economic considerations, phenomena unique to the nanoscale must guide the design of each unit operation and the overall process flow. We identify and discuss four key nanomanufacturing process design needs: (a) appropriately selected process break points, (b) synthesis techniques appropriate for large-scale manufacturing, (c) new structure- and property-based separations, and (d) advances in stabilization and packaging.

Chemically Engraving Semiconductor Nanowires: Using Three-Dimensional Nanoscale Morphology to Encode Functionality from the Bottom Up

The patterning of semiconductors with nanometer-scale precision is a cornerstone of modern technology. Top-down methods, ranging from photolithography to focused-ion beam milling, are typically used to fabricate complex nanostructures. In this Perspective, we discuss an alternative bottom-up method to encode similar high-resolution morphology in semiconductor nanowires (NWs). This process, termed ENGRAVE for "Encoded Nanowire GRowth and Appearance through VLS and Etching", combines fast modulation of nanowire composition during vapor-liquid-solid (VLS) growth with composition-dependent wet-chemical etching. This method produces cylindrically symmetric structures in which the diameter is modulated on a sub-10 nm axial length scale. The process can produce patterns that range from periodic, centrosymmetric to nonperiodic, asymmetric structures, including gratings, fractals, tapers, ratchets, sinusoids, nanogaps, and nanodots. We discuss the prospect for the ENGRAVE process to become a complementary method of lithographic-like patterning that encodes unique morphologies and physical properties in semiconductors for a range of technologies.