Synthesis of luminescent europium defects in diamond

Rare isotope-containing diamond colour centres for fundamental symmetry tests

Detecting a non-zero electric dipole moment in a particle would unambiguously signify physics beyond the Standard Model. A potential pathway towards this is the detection of a nuclear Schiff moment, the magnitude of which is enhanced by the presence of nuclear octupole deformation. However, due to the low production rate of isotopes featuring such 'pear-shaped' nuclei, capturing, detecting and manipulating them efficiently is a crucial prerequisite. Incorporating them into synthetic diamond optical crystals can produce defects with defined, molecule-like structures and isolated electronic states within the diamond band gap, increasing capture efficiency, enabling repeated probing of even a single atom and producing narrow optical linewidths. In this study, we used density functional theory to investigate the formation, structure and electronic properties of crystal defects in diamond containing [Formula: see text], a rare isotope that is predicted to have an exceptionally strong nuclear octupole deformation. In addition, we identified and studied stable lanthanide-containing defects with similar electronic structures as non-radioactive proxies to aid in experimental methods. Our findings hold promise for the existence of such defects and can contribute to the development of a quantum information processing-inspired toolbox of techniques for studying rare isotopes. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

X-ray Excited Optical Luminescence of Eu in Diamond Crystals Synthesized at High Pressure High Temperature

Powder diamonds with integrated europium atoms were synthesized at high pressure (7.7 GPa) and temperature (1800 °C) from a mixture of pentaerythritol with pyrolyzate of diphthalocyanine (C₆₄H₃₂N₁₆Eu) being a special precursor. In diamonds prepared by X-ray fluorescence spectroscopy, we have found a concentration of Eu atoms of 51 ± 5 ppm that is by two orders of magnitude greater than that in natural and synthetic diamonds. X-ray diffraction, SEM, X-ray exited optical luminescence, and Raman and IR spectroscopy have confirmed the formation of high-quality diamond monocrystals containing Eu and a substantial amount of nitrogen (~500 ppm). Numerical simulation has allowed us to determine the energy cost of 5.8 eV needed for the incorporation of a single Eu atom with adjacent vacancy into growing diamond crystal (528 carbons).

Synthesis of Y3Al5O12:Ce Powders for X-ray Luminescent Diamond Composites

A concentration series of Y3Al5O12:Ce solid solutions were prepared, and the composition demonstrating the highest X-ray luminescence intensity of cerium was identified. Based on the best composition, a series of luminescent diamond–Y3Al5O12:Ce composite films were synthesized using microwave plasma-assisted chemical vapor deposition (CVD) in methane–hydrogen gas mixtures. Variations in the amounts of the embedded Y3Al5O12:Ce powders allowed for the fine-tuning of the luminescence intensity of the composite films.

CVD Nanocrystalline Diamond Film Doped with Eu

This paper submits experimental results of a study directed towards the formation of Eu ions' luminescent centers in CVD diamond films. A new approach is based on use of diamond nanoparticles with a surface modified with Eu ions for seeding at CVD growth. Nanocrystalline diamond films (NCD) doped with Eu have been grown from the gas phase on silicon substrates by microwave plasma-assisted CVD at a frequency of 2.45 GHz. The photoluminescence spectra clearly show several electronic transitions of the Eu³⁺ ions, which confirm the incorporation of Eu ions into the NCD film.

Erbium ion implantation into LiNbO3, Al2O3, ZnO and diamond - measurement and modelling - an overview

The presented overview deals with the study of the luminescence properties of lanthanide ions incorporated into different dielectric crystalline materials for use in photonics and optoelectronics. From the crystalline materials, non-centrosymmetric hexagonal crystals of LiNbO₃, Al₂O₃ and ZnO, together with the centrosymmetric cubic crystal of diamond, were chosen. The above-mentioned materials represent a certain cross-section through various crystal structure geometries with different internal bonding of atoms which represent different crystal vicinity for the incorporated Er ions. During more than ten years of our research, each of the crystals was doped with erbium ions and the resulting structural and luminescence properties were studied in detail and compared between the mentioned crystalline materials to find similar behaviour for erbium ions in the different crystalline materials. To better understand the incorporation of erbium in the studied crystalline materials, theoretical simulations of different erbium-doped crystal models were carried out. In the calculations, cohesive energies of the structures and erbium defect-formation energies were compared in order to find the most favourable erbium positions in the crystals. Also, from the geometry optimization calculations, the optimal geometry arrangements in the vicinity of erbium ions in different crystals were studied and visualized. The results of the theoretical simulations confirmed the experimental results - i.e., from all the theoretical erbium-doped crystal models, the most stable structures contained erbium in the substitutional positions with octahedral oxygen coordination.

Tailoring of Typical Color Centers in Diamond for Photonics

On the demand of single-photon entangled light sources and high-sensitivity probes in the fields of quantum information processing, weak magnetic field detection and biosensing, the nitrogen vacancy (NV) color center is very attractive and has been deeply and intensively studied, due to its convenience of spin initialization, operation, and optical readout combined with long coherence time in the ambient environment. Although the application prospect is promising, there are still some problems to be solved before fully exerting its characteristic performance, including enhancement of emission of NV centers in certain charge state (NV^- or NV⁰ ), obtaining indistinguishable photons, and improving of collecting efficiency for the photons. Herein, the research progress in these issues is reviewed and commented on to help researchers grasp the current trends. In addition, the development of emerging color centers, such as germanium vacancy defects, and rare-earth dopants, with great potential for various applications, are also briefly surveyed.

Crystallization of Diamond from Melts of Europium Salts

Diamond crystallization in melts of europium salts (Eu2(C2O4)3·10H2O, Eu2(CO3)3·3H2O, EuCl3, EuF3, EuF2) at 7.8 GPa and in a temperature range of 1800–2000 °C was studied for the first time. Diamond growth on seed crystals was realized at a temperature of 2000 °C. Spontaneous diamond nucleation at these parameters was observed only in an Eu oxalate melt. The maximum growth rate in the europium oxalate melt was 22.5 μm/h on the {100} faces and 12.5 μm/h on the {111} faces. The diamond formation intensity in the tested systems was found to decrease in the following sequence: Eu2(C2O4)3·10H2O > Eu2(CO3)3·3H2O > EuF3 > EuF2 = EuCl3. Diamond crystallization occurred in the region of stable octahedral growth in melts of Eu3+ salts and in the region of cubo-octahedral growth in an EuF2 melt. The microrelief of faces was characterized by specific features, depending on the system composition and diamond growth rate. In parallel with diamond growth, the formation of metastable graphite in the form of independent crystals and inclusions in diamond was observed. From the spectroscopic characterization, it was found that diamonds synthesized from Eu oxalate contain relatively high concentrations of nitrogen (about 1000−1200 ppm) and show weak PL features due to inclusions of Eu-containing species.

Integrated Photonic Platform for Rare-Earth Ions in Thin Film Lithium Niobate

Rare-earth ion ensembles doped in single crystals are a promising materials system with widespread applications in optical signal processing, lasing, and quantum information processing. Incorporating rare-earth ions into integrated photonic devices could enable compact lasers and modulators, as well as on-chip optical quantum memories for classical and quantum optical applications. To this end, a thin film single crystalline wafer structure that is compatible with planar fabrication of integrated photonic devices would be highly desirable. However, incorporating rare-earth ions into a thin film form-factor while preserving their optical properties has proven challenging. We demonstrate an integrated photonic platform for rare-earth ions doped in a single crystalline thin film lithium niobate on insulator. The thin film is composed of lithium niobate doped with Tm³⁺. The ions in the thin film exhibit optical lifetimes identical to those measured in bulk crystals. We show narrow spectral holes in a thin film waveguide that require up to 2 orders of magnitude lower power to generate than previously reported bulk waveguides. Our results pave the way for scalable on-chip lasers, optical signal processing devices, and integrated optical quantum memories.

Nanodiamond-Based Theranostic Platform for Drug Delivery and Bioimaging

Nanodiamonds (NDs) are promising candidates for biomedical application due to their excellent biocompatibility and innate physicochemical properties. In this Concept article, nanodiamond-based theranostic platforms, which combine both drug delivery features and bioimaging functions, are discussed. The latest developments of therapeutic strategies are introduced and future perspectives for theranostic NDs are addressed.

Effect of Rare-Earth Element Oxides on Diamond Crystallization in Mg-Based Systems

Diamond crystallization in Mg-R2O3-C systems (R = Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb) was studied at 7.8 GPa and 1800 °C. It was found that rare-earth oxide additives in an amount of 10 wt % did not significantly affect both the degree of graphite-to-diamond conversion and crystal morphology relative to the Mg-C system. The effect of higher amounts of rare-earth oxide additives on diamond crystallization was studied for a Mg-Sm2O3-C system with a Sm2O3 content varied from 0 to 50 wt %. It was established that with an increase in the Sm2O3 content in the growth system, the degree of graphite-to-diamond conversion decreased from 80% at 10% Sm2O3 to 0% at 40% Sm2O3. At high Sm2O3 contents (40 and 50 wt %), instead of diamond, mass crystallization of metastable graphite was established. The observed changes in the degree of the graphite-to-diamond conversion, the changeover of diamond crystallization to the crystallization of metastable graphite, and the changes in diamond crystal morphology with increasing the Sm2O3 content attested the inhibiting effect of rare-earth oxides on diamond crystallization processes in the Mg-Sm-O-C system. The crystallized diamonds were studied by a suite of optical spectroscopy techniques, and the major characteristics of their defect and impurity structures were revealed. For diamond crystals produced with 10 wt % and 20 wt % Sm2O3 additives, a specific photoluminescence signal comprising four groups of lines centered at approximately 580, 620, 670, and 725 nm was detected, which was tentatively assigned to emission characteristic of Sm3+ ions.

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 × 1015 ions·cm-2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 °C in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 μm, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.

Ion implantation in nanodiamonds: size effect and energy dependence

Nanoparticles are ubiquitous in nature and are increasingly important for technology. They are subject to bombardment by ionizing radiation in a diverse range of environments. In particular, nanodiamonds represent a variety of nanoparticles of significant fundamental and applied interest. Here we present a combined experimental and computational study of the behaviour of nanodiamonds under irradiation by xenon ions. Unexpectedly, we observed a pronounced size effect on the radiation resistance of the nanodiamonds: particles larger than 8 nm behave similarly to macroscopic diamond (i.e. characterized by high radiation resistance) whereas smaller particles can be completely destroyed by a single impact from an ion in a defined energy range. This latter observation is explained by extreme heating of the nanodiamonds by the penetrating ion. The obtained results are not limited to nanodiamonds, making them of interest for several fields, putting constraints on processes for the controlled modification of nanodiamonds, on the survival of dust in astrophysical environments, and on the behaviour of actinides released from nuclear waste into the environment.

Tin-Vacancy Quantum Emitters in Diamond

Tin-vacancy (Sn-V) color centers were created in diamond via ion implantation and subsequent high-temperature annealing up to 2100 °C at 7.7 GPa. The first-principles calculation suggested that a large atom of tin can be incorporated into a diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The Sn-V center showed a sharp zero phonon line at 619 nm at room temperature. This line split into four peaks at cryogenic temperatures, with a larger ground state splitting (∼850  GHz) than that of color centers based on other group-IV elements, i.e., silicon-vacancy (Si-V) and germanium-vacancy (Ge-V) centers. The excited state lifetime was estimated, via Hanbury Brown-Twiss interferometry measurements on single Sn-V quantum emitters, to be ∼5  ns. The order of the experimentally obtained optical transition energies, compared with those of Si-V and Ge-V centers, was in good agreement with the theoretical calculations.

Biomedical applications of nanodiamond (Review)

The interest in nanodiamond applications in biology and medicine is on the rise over recent years. This is due to the unique combination of properties that nanodiamond provides. Small size (∼5 nm), low cost, scalable production, negligible toxicity, chemical inertness of diamond core and rich chemistry of nanodiamond surface, as well as bright and robust fluorescence resistant to photobleaching are the distinct parameters that render nanodiamond superior to any other nanomaterial when it comes to biomedical applications. The most exciting recent results have been related to the use of nanodiamonds for drug delivery and diagnostics-two components of a quickly growing area of biomedical research dubbed theranostics. However, nanodiamond offers much more in addition: it can be used to produce biodegradable bone surgery devices, tissue engineering scaffolds, kill drug resistant microbes, help us to fight viruses, and deliver genetic material into cell nucleus. All these exciting opportunities require an in-depth understanding of nanodiamond. This review covers the recent progress as well as general trends in biomedical applications of nanodiamond, and underlines the importance of purification, characterization, and rational modification of this nanomaterial when designing nanodiamond based theranostic platforms.

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. This variation allowed rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.

Erbium ion implantation into diamond – measurement and modelling of the crystal structure

Doping of diamond with erbium as an optically active centre.

Germanium: a new catalyst for diamond synthesis and a new optically active impurity in diamond

Diamond attracts considerable attention as a versatile and technologically useful material. For many demanding applications, such as recently emerged quantum optics and sensing, it is important to develop new routes for fabrication of diamond containing defects with specific optical, electronic and magnetic properties. Here we report on successful synthesis of diamond from a germanium-carbon system at conditions of 7 GPa and 1,500–1,800 °C. Both spontaneously nucleated diamond crystals and diamond growth layers on seeds were produced in experiments with reaction time up to 60 h. We found that diamonds synthesized in the Ge-C system contain a new optical centre with a ZPL system at 2.059 eV, which is assigned to germanium impurities. Photoluminescence from this centre is dominated by zero-phonon optical transitions even at room temperature. Our results have widened the family of non-metallic elemental catalysts for diamond synthesis and demonstrated the creation of germanium-related optical centres in diamond.

Germanium-Vacancy Single Color Centers in Diamond

Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.