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Zhang C, Guo P, Zhou J. Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials. NANO LETTERS 2022; 22:9297-9305. [PMID: 36441961 DOI: 10.1021/acs.nanolett.2c02802] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe2, FeCl2, and CrI3 bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produces a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.
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Affiliation(s)
- Chunmei Zhang
- School of Physics, Northwest University, Xi'an710069, China
| | - Ping Guo
- School of Physics, Northwest University, Xi'an710069, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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2
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Xia L, Lee S, Jiang Y, Li S, Liu Z, Yu L, Hu D, Wang S, Liu Y, Chen GZ. Physicochemical and Electrochemical Properties of 1,1,2,2‐Tetrafluoroethyl‐2,2,3,3‐Tetrafluoropropyl Ether as a Co‐Solvent for High‐Voltage Lithium‐Ion Electrolytes. ChemElectroChem 2019. [DOI: 10.1002/celc.201900729] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- Lan Xia
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - Saixi Lee
- Ningbo Institute of Materials Technology EngineeringChinese Academy of Sciences (CAS) Zhongguan West Road 1219 Ningbo 315201 China
| | - Yabei Jiang
- Ningbo Institute of Materials Technology EngineeringChinese Academy of Sciences (CAS) Zhongguan West Road 1219 Ningbo 315201 China
| | - Shiqi Li
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - Zhaoping Liu
- Ningbo Institute of Materials Technology EngineeringChinese Academy of Sciences (CAS) Zhongguan West Road 1219 Ningbo 315201 China
| | - Linpo Yu
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - Di Hu
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - Shuhan Wang
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - Yitong Liu
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
| | - George Z. Chen
- Department of Chemical and Environmental Engineering, Faculty of Science and EngineeringUniversity of Nottingham Ningbo China Taikang East Road 199 Ningbo 315100 China
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Gul Y, Creeth GL, English D, Holmes SN, Thomas KJ, Farrer I, Ellis DJ, Ritchie DA, Pepper M. Conductance quantisation in patterned gate In 0.75Ga 0.25As structures up to 6 × (2e 2/h). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:104002. [PMID: 30625452 DOI: 10.1088/1361-648x/aafd05] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We present electrical measurements from In0.75Ga0.25As 1D channel devices with Rashba-type, spin-orbit coupling present in the 2D contact regions. Suppressed backscattering as a result of the time-reversal asymmetry at the 1D channel entrance results in enhanced ballistic transport characteristics with clear quantised conductance plateaus up to 6 × (2e 2/h). Applying DC voltages between the source and drain ohmic contacts and an in-plane magnetic field confirms a ballistic transport picture. For asymmetric patterned gate biasing, a lateral spin-orbit coupling effect is weak. However, the Rashba-type spin-orbit coupling leads to a g-factor in the 1D channel that is reduced in magnitude from the 2D value of 9 to ~6.5 in the lowest subband when the effective Rashba field and the applied magnetic field are perpendicular.
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Affiliation(s)
- Y Gul
- London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
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Vinit V, Ramachandran CN. Spin density transfer from guest to host in endohedral heterofullerene dimers. Phys Chem Chem Phys 2019; 21:7605-7612. [DOI: 10.1039/c9cp00442d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The endohedral heterofullerenes (B@C59B)2, (B@C59N)2, (N@C59B)2 and (B@C59N–N@C59B) are investigated using dispersion corrected density functional theory.
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Affiliation(s)
- Vinit Vinit
- Department of Chemistry
- Indian Institute of Technology Roorkee
- Roorkee
- India
| | - C. N. Ramachandran
- Department of Chemistry
- Indian Institute of Technology Roorkee
- Roorkee
- India
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Zhu Z, Fauqué B, Behnia K, Fuseya Y. Magnetoresistance and valley degree of freedom in bulk bismuth. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:313001. [PMID: 29939150 DOI: 10.1088/1361-648x/aaced7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this paper, we first review fundamental aspects of magnetoresistance in multi-valley systems based on the semiclassical theory. Then we will review experimental evidence and theoretical understanding of magnetoresistance in an archetypal multi-valley system, where the electric conductivity is set by the sum of the contributions of different valleys. Bulk bismuth has three valleys with an extremely anisotropic effective mass. As a consequence the magnetoconductivity in each valley is extremely sensitive to the orientation of the magnetic field. Therefore, a rotating magnetic field plays the role of a valley valve tuning the contribution of each valley to the total conductivity. In addition to this simple semiclassical effect, other phenomena arise in the high-field limit as a consequence of an intricate Landau spectrum. In the vicinity of the quantum limit, the orientation of magnetic field significantly affects the distribution of carriers in each valley, namely, the valley polarization is induced by the magnetic field. Moreover, experiment has found that well beyond the quantum limit, one or two valleys become totally empty. This is the only case in condensed matter physics where a Fermi sea is completely dried up by a magnetic field without a metal-insulator transition. There have been two long-standing problems on bismuth near the quantum limit: the large anisotropic Zeeman splitting of holes, and the extra peaks in quantum oscillations, which cannot be assigned to any known Landau levels. These problems are solved by taking into account the interband effect due to the spin-orbit couplings for the former, and the contributions from the twinned crystal for the latter. Up to here, the whole spectrum can be interpreted within the one-particle theory. Finally, we will discuss transport and thermodynamic signatures of breaking of the valley symmetry in this system. By this term, we refer to the observed spontaneous loss of threefold symmetry at high magnetic field and low temperature. Its theoretical understanding is still missing. We will discuss possible explanations.
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Affiliation(s)
- Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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Flamme B, Haddad M, Phansavath P, Ratovelomanana-Vidal V, Chagnes A. Anodic Stability of New Sulfone-Based Electrolytes for Lithium-Ion Batteries. ChemElectroChem 2018. [DOI: 10.1002/celc.201701343] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Benjamin Flamme
- PSL Research University; Chimie ParisTech-CNRS Institut de Recherche de Chimie Paris; 11 rue Pierre et Marie Curie 75005 Paris France
| | - Mansour Haddad
- PSL Research University; Chimie ParisTech-CNRS Institut de Recherche de Chimie Paris; 11 rue Pierre et Marie Curie 75005 Paris France
| | - Phannarath Phansavath
- PSL Research University; Chimie ParisTech-CNRS Institut de Recherche de Chimie Paris; 11 rue Pierre et Marie Curie 75005 Paris France
| | - Virginie Ratovelomanana-Vidal
- PSL Research University; Chimie ParisTech-CNRS Institut de Recherche de Chimie Paris; 11 rue Pierre et Marie Curie 75005 Paris France
| | - Alexandre Chagnes
- GéoRessources - UMR CNRS 7359-CREGU; Université de Lorraine; 2 Rue du Doyen Roubault 54500 BP 10162 Vandoeuvre-les-Nancy Cedex France
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Wang Z, Mak KF, Shan J. Strongly Interaction-Enhanced Valley Magnetic Response in Monolayer WSe_{2}. PHYSICAL REVIEW LETTERS 2018; 120:066402. [PMID: 29481248 DOI: 10.1103/physrevlett.120.066402] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2017] [Revised: 09/20/2017] [Indexed: 06/08/2023]
Abstract
We measure the doping dependence of the valley Zeeman splitting of the fundamental optical transitions in monolayer WSe_{2} under an out-of-plane magnetic field by optical reflection contrast and photoluminescence spectroscopy. A nonlinear valley Zeeman effect, correlated with an over fourfold enhancement in the g factor, is observed. The effect occurs when the Fermi level crosses the spin-split upper conduction band, corresponding to a change of the spin-valley degeneracy from two to four. The enhancement increases and shows no sign of saturation as the sample temperature decreases. Our result demonstrates the importance of the Coulomb interactions in the valley magnetic response of two-dimensional transition metal dichalcogenide semiconductors.
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Affiliation(s)
- Zefang Wang
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
- School of Applied and Engineering Physics and Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - Kin Fai Mak
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
- School of Applied and Engineering Physics and Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - Jie Shan
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
- School of Applied and Engineering Physics and Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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Melnikov MY, Shashkin AA, Dolgopolov VT, Huang SH, Liu CW, Kravchenko SV. Indication of band flattening at the Fermi level in a strongly correlated electron system. Sci Rep 2017; 7:14539. [PMID: 29109456 PMCID: PMC5674001 DOI: 10.1038/s41598-017-15117-x] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2017] [Accepted: 10/20/2017] [Indexed: 11/29/2022] Open
Abstract
Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, m, with that at the Fermi level, mF, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system.
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Affiliation(s)
- M Yu Melnikov
- Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia
| | - A A Shashkin
- Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia
| | - V T Dolgopolov
- Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia
| | - S-H Huang
- Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106, Taiwan.,National Nano Device Laboratories, Hsinchu, 300, Taiwan
| | - C W Liu
- Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106, Taiwan.,National Nano Device Laboratories, Hsinchu, 300, Taiwan
| | - S V Kravchenko
- Physics Department, Northeastern University, Boston, Massachusetts, 02115, USA.
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Zhu Z, Wang J, Zuo H, Fauqué B, McDonald RD, Fuseya Y, Behnia K. Emptying Dirac valleys in bismuth using high magnetic fields. Nat Commun 2017; 8:15297. [PMID: 28524844 PMCID: PMC5454462 DOI: 10.1038/ncomms15297] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2016] [Accepted: 03/08/2017] [Indexed: 01/28/2023] Open
Abstract
The Fermi surface of elemental bismuth consists of three small rotationally equivalent electron pockets, offering a valley degree of freedom to charge carriers. A relatively small magnetic field can confine electrons to their lowest Landau level. This is the quantum limit attained in other dilute metals upon application of sufficiently strong magnetic field. Here we report on the observation of another threshold magnetic field never encountered before in any other solid. Above this field, Bempty, one or two valleys become totally empty. Drying up a Fermi sea by magnetic field in the Brillouin zone leads to a manyfold enhancement in electric conductance. We trace the origin of the large drop in magnetoresistance across Bempty to transfer of carriers between valleys with highly anisotropic mobilities. The non-interacting picture of electrons with field-dependent mobility explains most results but the Coulomb interaction may play a role in shaping the fine details.
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Affiliation(s)
- Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.,MS-E536, NHMFL, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Jinhua Wang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Huakun Zuo
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Benoît Fauqué
- Laboratoire Physique et Etude de Matériaux (CNRS-UPMC) ESPCI Paris, PSL Research University, Paris 75005, France.,JEIP, USR 3573 CNRS, Collège de France, PSL Research University, 11, place Marcelin Berthelot, Paris Cedex 05 75231, France
| | - Ross D McDonald
- MS-E536, NHMFL, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Yuki Fuseya
- Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
| | - Kamran Behnia
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.,Laboratoire Physique et Etude de Matériaux (CNRS-UPMC) ESPCI Paris, PSL Research University, Paris 75005, France
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Xia W, Dai L, Yu P, Tong X, Song W, Zhang G, Wang Z. Recent progress in van der Waals heterojunctions. NANOSCALE 2017; 9:4324-4365. [PMID: 28317972 DOI: 10.1039/c7nr00844a] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.
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Affiliation(s)
- Wanshun Xia
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China. and Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Liping Dai
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Peng Yu
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Xin Tong
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Wenping Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Guojun Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
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Čukarić NA, Partoens B, Tadić MŽ, Arsoski VV, Peeters FM. The 30-band k ⋅ p theory of valley splitting in silicon thin layers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:195303. [PMID: 27093609 DOI: 10.1088/0953-8984/28/19/195303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The valley splitting of the conduction-band states in a thin silicon-on-insulator layer is investigated using the 30-band k ⋅ p theory. The system composed of a few nm thick [Formula: see text] layer embedded within thick SiO2 layers is analyzed. The valley split states are found to cross periodically with increasing quantum well width, and therefore the energy splitting is an oscillatory function of the quantum well width, with period determined by the wave vector K 0 of the conduction band minimum. Because the valley split states are classified by parity, the optical transition between the ground hole state and one of those valley split conduction band states is forbidden. The oscillations in the valley splitting energy decrease with electric field and with smoothing of the composition profile between the well and the barrier by diffusion of oxygen from the SiO2 layers to the Si quantum well. Such a smoothing also leads to a decrease of the interband transition matrix elements. The obtained results are well parametrized by the effective two-valley model, but are found to disagree from previous 30-band calculations. This discrepancy could be traced back to the fact that the basis for the numerical solution of the eigenproblem must be restricted to the first Brillouin zone in order to obtain quantitatively correct results for the valley splitting.
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Affiliation(s)
- Nemanja A Čukarić
- School of Electrical Engineering, University of Belgrade, PO Box 35-54, 11120 Belgrade, Serbia
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