Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La_0.66Sr_0.33MnO₃ (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites

The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E   to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.

Efficiently Rotating the Magnetization Vector in a Magnetic Semiconductor via Organic Molecules

Local manipulation of the magnetization direction is of significant importance in spintronics because it provides an effective way in nonvolatile device applications for ultrahigh density information storage. However, this modulation is usually restricted to a limited range even through large power input. We demonstrate a large rotation of the magnetization vector in a magnetic semiconductor (Ga,Mn)As (110) thin film by surface decoration of self-assembled molecules. The carrier density of the film is vastly changed by two kinds of molecules acting as electron donors and acceptors, resulting in a prominent variation of the Curie temperature and magnetic anisotropy. The magnetic anisotropic fields tuned by the molecules could be quantitatively determined by planar Hall measurements, based on which the largest rotation angle is calculated to be ∼27°. This value doubles the result obtained by the electric field up to 0.4 V/nm, which is approaching the breakdown strength of common dielectrics. Our work offers a new functionality for effectively tuning the magnetization direction of nanoscale bits, without relying on the magnetic field, spin current, or mechanical strain.

Reversible switching of PEDOT:PSS conductivity in the dielectric–conductive range through the redistribution of light-governing polymers

One of the biggest challenges in the field of organic electronics is the creation of flexible, stretchable, and biofavorable materials. Here the simple and repeatable method for reversible writing/erasing of arbitrary conductive pattern in conductive polymer thin film is proposed. The copolymer azo-modified poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was synthesized to achieve reversible photo-induced local electrical switching in the insulator–semimetal range. The photoisomerization of the polymer was induced by grafting nitrobenzenediazonium tosylate to the PSS main chains. While the as-deposited PEDOT:PSS thin films showed good conductivity, the modification procedure generated polymer redistribution, resulting in an island-like PEDOT distribution and the loss of conductivity. Further local illumination (430 nm) led to the azo-isomerization redistribution of the polymer chains and the creation of a conductive pattern in the insulating polymer film. The created pattern could then be erased by illumination at a second wavelength (470 nm), which was attributed to induction of reverse azo-isomerization. In this way, the reversible writing/erasing of arbitrary conductive patterns in thin polymer films was realized.

Chemical modification of PEDOT:PSS allows grafting light-switchable moieties to PSS chains and light induced reversible tuning of materials conductivity in dielectric-semimetal range.

Measurement Techniques of the Magneto-Electric Coupling in Multiferroics

The current surge of interest in multiferroic materials demands specialized measurement techniques to support multiferroics research. In this review article we detail well-established measurement techniques of the magneto-electric coupling coefficient in multiferroic materials, together with newly proposed ones. This work is intended to serve as a reference document for anyone willing to develop experimental measurement techniques of multiferroic materials.

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn)As by Organic Molecules

Surface adsorption of organic molecules provides a new method for the robust manipulation of ferromagnetism in (Ga,Mn)As. Electron acceptor and donor molecules yield significant enhancement and suppression, respectively, of ferromagnetism with modulation of the Curie temperature spanning 36 K. Dip-pen nanolithography is employed to directly pattern monolayers on (Ga,Mn)As, which is presented as a novel pathway toward producing magnetic nanostructures.

In-plane tunnelling field-effect transistor integrated on Silicon

Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {11̅00} side facets of the cores at much lower temperature (220 °C). High-resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ∼ 17 K.

Rashba spin-orbit anisotropy and the electric field control of magnetism

The control of the magnetism of ultra-thin ferromagnetic layers using an electric field, rather than a current, has many potential technologically important applications. It is usually insisted that such control occurs via an electric field induced surface charge doping that modifies the magnetic anisotropy. However, it remains the case that a number of key experiments cannot be understood within such a scenario. Much studied is the spin-splitting of the conduction electrons of non-magnetic metals or semi-conductors due to the Rashba spin-orbit coupling. This reflects a large surface electric field. For a magnet, this same splitting is modified by the exchange field resulting in a large magnetic anisotropy energy via the Dzyaloshinskii-Moriya mechanism. This different, yet traditional, path to an electrically induced anisotropy energy can explain the electric field, thickness, and material dependence reported in many experiments.

Magnetic-field-induced ferroelectric polarization reversal in the multiferroic Ge(1-x)Mn(x)Te semiconductor

Ge(1-x)Mn(x)Te is shown to be a multiferroic semiconductor, exhibiting both ferromagnetic and ferroelectric properties. By ferromagnetic resonance we demonstrate that both types of order are coupled to each other. As a result, magnetic-field-induced ferroelectric polarization reversal is achieved. Switching of the spontaneous electric dipole moment is monitored by changes in the magnetocrystalline anisotropy. This also reveals that the ferroelectric polarization reversal is accompanied by a reorientation of the hard and easy magnetization axes. By tuning the GeMnTe composition, the interplay between ferromagnetism and ferroelectricity can be controlled.

Confinement Induced Preferential Orientation of Crystals and Enhancement of Properties in Ferroelectric Polymer Nanowires

The physical properties of polymers strongly depend on the molecular or supermolecular order and orientation. Here we demonstrate the preferential orientation of lamellar crystals and the enhancement of ferro/piezoelectric properties in individual poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) nanowires fabricated from anodic alumina oxide (AAO) templates. The crystallographic a axis of P(VDF-TrFE) was found to be aligned along the long axis of nanowires due to geometrical confinement and grapho-expitaxial crystals growth. The alignment of lamellar crystals in P(VDF-TrFE) nanowires and enhancement of crystallization translated into improved ferro/piezoelectric properties such as lower coercive field and higher piezoelectric coefficient, testified by piezoresponse force microscopy images and piezoresponse hysteresis loops.

In-plane uniaxial magnetic anisotropy in (Ga, Mn)As due to local lattice distortions around Mn²⁺ ions

We theoretically investigate the interplay between local lattice distortions around the Mn(2+) impurity ion and its magnetization, mediated through spin-orbit coupling of holes. We show that the tetrahedral symmetry around the Mn(2+) ion is spontaneously broken and that local Jahn-Teller distortions coupled with growth strain result in uniaxial magnetic anisotropy. We also account for the experimentally observed in-plane uniaxial magnetic anisotropy rotation due to variation of hole density. According to this model, lack of inversion and top-down symmetries of (Ga, Mn)As layers lead to in-plane biaxial symmetry breaking in the presence of Jahn-Teller distortions.

Electric field control of magnetism in multiferroic heterostructures

We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.

Resistive switching and magnetic modulation in cobalt-doped ZnO

A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.

Cold-field switching in PVDF-TrFE ferroelectric polymer nanomesas

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data, the piezoresponse force microscopy local switching was nonthermally activated and, at the same time, occurring at electric fields significantly lower than the intrinsic switching threshold. A "cold-field" defect-mediated extrinsic switching is shown to be an adequate scenario describing this peculiar switching behavior. The extrinsic character of the observed polarization reversal suggests that there is no fundamental bar for lowering the coercive field in ferroelectric polymer nanostructures, which is of importance for their applications in functional electronics.

Spin control by application of electric current and voltage in FeCo-MgO junctions

Efficient control and detection of spins are the most important tasks in spintronics. The current and voltage applied to a magnetic tunnel junction may exert a torque on the magnetic thin layer in the junction and cause its reversal or continuous precession. The discovery of the giant tunnelling magnetoresistance effect in ferromagnetic tunnelling junctions using an MgO barrier enabled us to obtain a large signal output from the magnetization reversal and precession. Also, the interplay of large spin configuration-electric conduction coupling provides highly nonlinear effects like the spin-torque diode effect. The negative resistance effect and amplification using it are predicted. A new discovery about a voltage-induced magnetic anisotropy change in Fe ultrathin films is also discussed.

Multi-ferroic and magnetoelectric materials and interfaces

The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor.

Electrically defined ferromagnetic nanodots

While ferromagnetic nanodots are being widely studied from fundamental as well as application points of views, so far all the dots have been physically defined; once made, one cannot change their dimension or size. We show that ferromagnetic nanodots can be electrically defined. To realize this, we utilize an electric field to modulate the in-plane distribution of carriers in a ferromagnetic semiconductor (Ga,Mn)As film with a meshed gate structure having a large number of nanoscaled windows.

Study of Mn interstitials in (Ga, Mn)As using high-resolution x-ray diffraction

We present a method for the determination of the concentration of Mn ions in nonequivalent interstitial positions in the lattice of (Ga, Mn)As. The Mn ions occupy substitutional and/or interstitial positions in the GaAs lattice and the dependence of the structure factor on their concentration differs for various diffractions and for different positions in the lattice. We measured several diffractions including weak diffractions, which are very sensitive to the Mn content. All measured diffraction curves were simultaneously fitted to a theoretical model and the densities of Mn ions, in particular interstitial positions, were obtained. The method reported here allows us to determine the amount of interstitial Mn which, according to current understanding, affects the ferromagnetic properties including the Curie temperature in (Ga, Mn)As.

Magnetoelectric coupling effects in multiferroic complex oxide composite structures

The study of magnetoelectric materials has recently received renewed interest, in large part stimulated by breakthroughs in the controlled growth of complex materials and by the search for novel materials with functionalities suitable for next generation electronic devices. In this Progress Report, we present an overview of recent developments in the field, with emphasis on magnetoelectric coupling effects in complex oxide multiferroic composite materials.

Electrically driven magnetization of diluted magnetic semiconductors actuated by the Overhauser effect

It is well known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductors (DMS) like Ga(1-x)Mn(x)As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that even with a constant hole density, large changes in the magnetization can be obtained with a relatively small imbalance in the quasi-Fermi levels for up-spin and down-spin electrons. We show, by coupling the mean field theory of diluted magnetic semiconductor ferromagnetism with master equations governing the Mn spin-dynamics, that a mere splitting of the up-spin and down-spin quasi-Fermi levels by 0.1 meV will produce the effect of an external magnetic field as large as 1 T as long as the alternative relaxation paths for Mn spins (i.e. spin-lattice relaxation) can be neglected. The physics is similar to the classic Overhauser effect, also called the dynamic nuclear polarization, with the Mn impurities playing the role of the nucleus. We propose that a lateral spin-valve structure in an anti-parallel configuration with a DMS as the channel can be used to demonstrate this effect, as quasi-Fermi level splitting of such magnitude, inside the channel of similar systems, has already been experimentally demonstrated to produce polarization of paramagnetic impurity spins.

Organic nonvolatile memory devices based on ferroelectricity

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (approximately 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

We observe a singularity in the temperature derivative drho/dT of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with Tc's ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the drho/dT singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of drho/dT on the paramagnetic side points to the important role of short-range correlated spin fluctuations.