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Yang R, Li J, Cai Y, Blankenship BW, Wu J, Grigoropoulos CP. Near-Field Nanoimaging of Phases and Carrier Dynamics in Vanadium Dioxide Nanobeams. ACS PHOTONICS 2024; 11:3359-3364. [PMID: 39184182 PMCID: PMC11342413 DOI: 10.1021/acsphotonics.4c00848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Revised: 07/09/2024] [Accepted: 07/10/2024] [Indexed: 08/27/2024]
Abstract
The stable coexistence of insulating and metallic phases in strained vanadium dioxide (VO2) has garnered significant research interest due to the intriguing phase transition phenomena. However, the temporal behavior of charge carriers in different phases of VO2 remains elusive. Herein, we employ near-field optical nanoscopy to capture nanoscale alternating phase domains in bent VO2 nanobeams. By conducting transient measurements across the different phases, we observed a prolonged carrier recombination lifetime in the metallic phase of VO2, accompanied by an accelerated diffusion process. Our findings reveal nanoscale carrier dynamics in VO2 nanobeams, offering insights that can facilitate further investigations into phase-change materials and their potential applications in sensing and microelectromechanical devices.
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Affiliation(s)
- Rundi Yang
- Laser
Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States
| | - Jingang Li
- Laser
Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States
| | - Yuhang Cai
- Department
of Materials Science and Engineering, University
of California, Berkeley, California 94720, United States
| | - Brian W. Blankenship
- Laser
Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States
| | - Junqiao Wu
- Department
of Materials Science and Engineering, University
of California, Berkeley, California 94720, United States
| | - Costas P. Grigoropoulos
- Laser
Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States
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2
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Suleiman AA, Parsi A, Razeghi M, Başçı U, Oh S, Pehlivanoğlu D, Jeong HY, Kang K, Kasırga TS. Ion transport induced room-temperature insulator-metal transition in single-crystalline Cu 2Se. NANOSCALE HORIZONS 2024; 9:1137-1145. [PMID: 38764332 DOI: 10.1039/d4nh00003j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2024]
Abstract
Cu2Se is a superionic conductor above 414 K, with ionic conductivities reaching that of molten salts. The superionic behavior results from hopping Cu ions between different crystallographic sites within the Se scaffold. However, the properties of Cu2Se below 414 K are far less known due to experimental limitations imposed by the bulk or polycrystalline samples that have been available so far. Here, we report the synthesis of ultra-thin, large-area single crystalline Cu2Se samples using a chemical vapor deposition method. The as-synthesized Cu2Se crystals exhibit optically and electrically detectable and controllable robust phases at room temperature and above. We demonstrate that Cu ion vacancies can be manipulated to induce an insulator-metal transition, which exhibits 6 orders of magnitude change in the electrical resistance of two terminal devices, accompanied by an optical change in the phase configuration. Our experiments show that the high mobility of the liquid-like Cu ion vacancies in Cu2Se causes macroscopic ordering in the Cu vacancies. Consequently, phase distribution over the crystals is not dictated by the diffusive motion of the ions but by the local energy minima formed due to the phase transition. As a result, long-range vacancy ordering of the crystal below 414 K becomes optically observable at a micrometer scale. This work demonstrates that Cu2Se could be a prototypical system where long-range ordering properties can be studied via electrical and optical methods.
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Affiliation(s)
- Abdulsalam Aji Suleiman
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Amir Parsi
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Mohammadali Razeghi
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Uğur Başçı
- Department of Physics, Bilkent University, Ankara 06800, Turkey
| | - Saeyoung Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | | | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - T Serkan Kasırga
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
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3
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Khanyile BS, Numan N, Simo A, Nkosi M, Mtshali CB, Khumalo Z, Madiba IG, Mabakachaba B, Swart H, Coetsee-Hugo E, Duvenhage MM, Lee E, Henini M, Gibaud A, Chaker M, Rezaee P, Lethole N, Akbari M, Morad R, Maaza M. Towards Room Temperature Thermochromic Coatings with controllable NIR-IR modulation for solar heat management & smart windows applications. Sci Rep 2024; 14:2818. [PMID: 38307893 PMCID: PMC10837131 DOI: 10.1038/s41598-024-52021-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 01/12/2024] [Indexed: 02/04/2024] Open
Abstract
Solar heat management & green air-conditioning are among the major technologies that could mitigate heat islands phenomenon while minimizing significantly the CO2 global foot-print within the building & automotive sectors. Chromogenic materials in general, and thermochromic smart coatings especially are promising candidates that consent a noteworthy dynamic solar radiation Infrared (NIR-IR) regulation and hence an efficient solar heat management especially with the expected increase of the global seasonal temperature. Within this contribution, two major challenging bottlenecks in vanadium oxide based smart coatings were addressed. It is validated for the first time that the NIR-IR modulation of the optical transmission (∆TTRANS = T(T〈TMIT) - T(T〉TMIT) of Vanadium oxide based smart coatings can be controlled & tuned. This upmost challenging bottle-neck controllability/tunability is confirmed via a genuine approach alongside to a simultaneous drastic reduction of the phase transition temperature TMIT from 68.8 °C to nearly room temperature. More precisely, a substantial thermochromism in multilayered V2O5/V/V2O5 stacks equivalent to that of standard pure VO2 thin films but with a far lower transition temperature, is reported. Such a multilayered V2O5/V/V2O5 thermochromic system exhibited a net control & tunability of the optical transmission modulation in the NIR-IR (∆TTRANS) via the nano-scaled thickness' control of the intermediate Vanadium layer. In addition, the control of ∆TTRANS is accompanied by a tremendous diminution of the thermochromic transition temperature from the elevated bulk value of 68.8 °C to the range of 27.5-37.5 ºC. The observed remarkable and reversible thermochromism in such multilayered nano-scaled system of V2O5/V/V2O5 is likely to be ascribed to a noteworthy interfacial diffusion, and an indirect doping by alkaline ions diffusing from the borosilicate substrate. It is hoped that the current findings would contribute in advancing thermochromic smart window technology and their applications for solar heat management in glass windows in general, skyscraper especially & in the automotive industry. If so, this would open a path to a sustainable green air-conditioning with zero-energy input.
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Affiliation(s)
- B S Khanyile
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa.
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa.
| | - N Numan
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - A Simo
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - M Nkosi
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - C B Mtshali
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
| | - Z Khumalo
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
| | - I G Madiba
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - B Mabakachaba
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
- Physics Department, University of the Western Cape, P.O. Box 1906, Bellville, 7535, South Africa
| | - H Swart
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - E Coetsee-Hugo
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - Mart-Mari Duvenhage
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - E Lee
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - M Henini
- School of Physics & Astronomy, Nottingham University, Nottingham, NG7 2RD7, UK
| | - A Gibaud
- IMMM, UMR 6283 CNRS, Bd O. Messiaen, University of Le Maine, 72085, Le Mans Cedex 09, France
| | - M Chaker
- INRS-Energie et Matériaux, 1650 Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada
| | - P Rezaee
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - N Lethole
- Department Physics, University of Fort Hare, Alice, Eastern Cape Province, South Africa
| | - M Akbari
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - R Morad
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - M Maaza
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa.
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa.
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4
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Li Z, Zhang Z, Zhou X. Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305234. [PMID: 37394705 DOI: 10.1002/smll.202305234] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Indexed: 07/04/2023]
Abstract
The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.
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Affiliation(s)
- Zejun Li
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Zhi Zhang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
| | - Xiaoli Zhou
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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5
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Zhang Z, Zhang L, Zhou Y, Cui Y, Chen Z, Liu Y, Li J, Long Y, Gao Y. Thermochromic Energy Efficient Windows: Fundamentals, Recent Advances, and Perspectives. Chem Rev 2023. [PMID: 37053573 DOI: 10.1021/acs.chemrev.2c00762] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/15/2023]
Abstract
Thermochromic energy efficient windows represent an important protocol technology for advanced architectural windows with energy-saving capabilities through the intelligent regulation of indoor solar irradiation and the modulation of window optical properties in response to real-time temperature stimuli. In this review, recent progress in some promising thermochromic systems is summarized from the aspects of structures, the micro-/mesoscale regulation of thermochromic properties, and integration with other emerging energy techniques. Furthermore, the challenges and opportunities in thermochromic energy-efficient windows are outlined to promote future scientific investigations and practical applications in building energy conservation.
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Affiliation(s)
- Zongtao Zhang
- School of Materials Science and Engineering, Zhengzhou University, Kexue Avenue 100, Zhengzhou 450001, China
| | - Liangmiao Zhang
- School of Materials Science and Engineering, Shanghai University, Shangda Road 99, Shanghai 200444, China
| | - Yang Zhou
- State Key Laboratory of Petroleum Resources and Prospecting, China University of Petroleum (Beijing), Beijing 102249, China
| | - Yuanyuan Cui
- School of Materials Science and Engineering, Shanghai University, Shangda Road 99, Shanghai 200444, China
| | - Zhang Chen
- School of Materials Science and Engineering, Shanghai University, Shangda Road 99, Shanghai 200444, China
| | - Yinping Liu
- State Key Laboratory of Petroleum Resources and Prospecting, China University of Petroleum (Beijing), Beijing 102249, China
| | - Jin Li
- School of Materials Science and Engineering, Zhengzhou University, Kexue Avenue 100, Zhengzhou 450001, China
| | - Yi Long
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR 999077, China
| | - Yanfeng Gao
- School of Materials Science and Engineering, Shanghai University, Shangda Road 99, Shanghai 200444, China
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6
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Hu P, Hu P, Vu TD, Li M, Wang S, Ke Y, Zeng X, Mai L, Long Y. Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications. Chem Rev 2023; 123:4353-4415. [PMID: 36972332 PMCID: PMC10141335 DOI: 10.1021/acs.chemrev.2c00546] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V2O3, V3O5, VO2, V3O7, V2O5, V2O2, V6O13, and V4O9. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.
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7
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Bahrami M, Vasilopoulos P. Transverse Magnetic Surface Plasmons in Graphene Nanoribbon Qubits: The Influence of a VO 2 Substrate. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:718. [PMID: 36839087 PMCID: PMC9965028 DOI: 10.3390/nano13040718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 02/08/2023] [Accepted: 02/11/2023] [Indexed: 06/18/2023]
Abstract
We study the influence of the phase-change material VO2 on transverse magnetic (TM) surface plasmon (SP) modes in metallic arm-chair graphene nanoribbon (AGNR) qubits in the Lindhard approximation. We assess the effects of temperature as a dynamic knob for the transition from the insulating to the metallic phase on the TM SP modes in single-band (SB) and two-band (TB) transitions. We show that a VO2 substrate leads to TM SP modes in both SB and TB transitions. In addition, we observe that the SP modes have a lower frequency than those for a substrate of constant permittivity. In addition, we study the influence of the substrate-induced band gap Δ' on SP modes in TB transitions for the insulating and metallic phases of VO2.
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Affiliation(s)
- Mousa Bahrami
- Bita Quantum AI Inc., 2021 Av. Atwater, Montréal, QC H3H 2P2, Canada
| | - Panagiotis Vasilopoulos
- Department of Physics, Concordia University, 7141 Sherbrooke Ouest, Montréal, QC H4B 1R6, Canada
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8
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Coughlin AL, Pan Z, Hong J, Zhang T, Zhan X, Wu W, Xie D, Tong T, Ruch T, Heremans JJ, Bao J, Fertig HA, Wang J, Kim J, Zhu H, Li D, Zhang S. Enhanced Electron Correlation and Significantly Suppressed Thermal Conductivity in Dirac Nodal-Line Metal Nanowires by Chemical Doping. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204424. [PMID: 36437041 PMCID: PMC9839858 DOI: 10.1002/advs.202204424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 10/08/2022] [Indexed: 06/16/2023]
Abstract
Enhancing electron correlation in a weakly interacting topological system has great potential to promote correlated topological states of matter with extraordinary quantum properties. Here, the enhancement of electron correlation in a prototypical topological metal, namely iridium dioxide (IrO2 ), via doping with 3d transition metal vanadium is demonstrated. Single-crystalline vanadium-doped IrO2 nanowires are synthesized through chemical vapor deposition where the nanowire yield and morphology are improved by creating rough surfaces on substrates. Vanadium doping leads to a dramatic decrease in Raman intensity without notable peak broadening, signifying the enhancement of electron correlation. The enhanced electron correlation is further evidenced by transport studies where the electrical resistivity is greatly increased and follows an unusual T $\sqrt T $ dependence on the temperature (T). The lattice thermal conductivity is suppressed by an order of magnitude via doping even at room temperature where phonon-impurity scattering becomes less important. Density functional theory calculations suggest that the remarkable reduction of thermal conductivity arises from the complex phonon dispersion and reduced energy gap between phonon branches, which greatly enhances phase space for phonon-phonon Umklapp scattering. This work demonstrates a unique system combining 3d and 5d transition metals in isostructural materials to enrich the system with various types of interactions.
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Affiliation(s)
| | - Zhiliang Pan
- Department of Mechanical EngineeringVanderbilt UniversityNashvilleTN37235USA
| | - Jeonghoon Hong
- Department of PhysicsIncheon National UniversityIncheon22012Korea
| | - Tongxie Zhang
- Department of PhysicsIndiana UniversityBloomingtonIN47405USA
| | - Xun Zhan
- Electron Microscopy CenterIndiana UniversityBloomingtonIN47405USA
| | - Wenqian Wu
- Department of Mechanical and Materials EngineeringUniversity of NebraskaLincolnNE68588USA
| | - Dongyue Xie
- Department of Mechanical and Materials EngineeringUniversity of NebraskaLincolnNE68588USA
- Center for Integrated Nanotechnologies, MPA DivisionLos Alamos National LaboratoryLos Alamos87545United States
| | - Tian Tong
- Department of Electrical and Computer Engineering and Texas Center for Superconductivity (TcSUH)University of HoustonHoustonTX77204USA
| | - Thomas Ruch
- Department of PhysicsIndiana UniversityBloomingtonIN47405USA
| | | | - Jiming Bao
- Department of Electrical and Computer Engineering and Texas Center for Superconductivity (TcSUH)University of HoustonHoustonTX77204USA
| | | | - Jian Wang
- Department of Mechanical and Materials EngineeringUniversity of NebraskaLincolnNE68588USA
| | - Jeongwoo Kim
- Department of PhysicsIncheon National UniversityIncheon22012Korea
| | - Hanyu Zhu
- Department of Materials Science and NanoEngineeringRice UniversityHoustonTX77005USA
| | - Deyu Li
- Department of Mechanical EngineeringVanderbilt UniversityNashvilleTN37235USA
| | - Shixiong Zhang
- Department of PhysicsIndiana UniversityBloomingtonIN47405USA
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9
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Bahrami M, Vasilopoulos P. RPA Plasmons in Graphene Nanoribbons: Influence of a VO 2 Substrate. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2861. [PMID: 36014730 PMCID: PMC9412389 DOI: 10.3390/nano12162861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 08/13/2022] [Accepted: 08/16/2022] [Indexed: 06/15/2023]
Abstract
We study the effect of the phase-change material VO2 on plasmons in metallic arm-chair graphene nanoribbons (AGNRs) within the random-phase approximation (RPA) for intra- and inter-band transitions. We assess the influence of temperature as a knob for the transition from the insulating to the metallic phase of VO2 on localized and propagating plasmon modes. We show that AGNRs support localized and propagating plasmon modes and contrast them in the presence and absence of VO2 for intra-band (SB) transitions while neglecting the influence of a substrate-induced band gap. The presence of this gap results in propagating plasmon modes in two-band (TB) transitions. In addition, there is a critical band gap below and above which propagating modes have a linear negative or positive velocity. Increasing the band gap shifts the propagating and localized modes to higher frequencies. In addition, we show how the normalized Fermi velocity increases plasmon modes frequency.
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Affiliation(s)
- Mousa Bahrami
- Bita Quantum AI Inc., 2021 Av. Atwater, Montréal, QC H3H 2P2, Canada
| | - Panagiotis Vasilopoulos
- Department of Physics, Concordia University, 7141 Sherbrooke Ouest, Montreal, QC H4B 1R6, Canada
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10
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Xue Y, Yin S. Element doping: a marvelous strategy for pioneering the smart applications of VO 2. NANOSCALE 2022; 14:11054-11097. [PMID: 35900045 DOI: 10.1039/d2nr01864k] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Smart materials are leading the future of materials by virtue of their autonomous response behavior to external stimuli; it is widely believed their development and application will bring a new revolution. Among them, vanadium dioxide (VO2) is a special one showing a unique multi-stimulus responsive metal-insulator transition (MIT) accompanied by a structural phase transition (SPT) with striking changes of physical properties including optical, electrical and thermal properties, etc., making it ideal for smart windows, micro-bolometers, actuators, etc. Since the attractive performances of VO2 are rooted in MIT behavior (coupled with SPT), element doping becomes a powerful tool in tailoring VO2 performance. Oriented on the practical requirements, element-doped VO2 is more promising and competitive in terms of performance, prospect, and cost. Here we focus specifically on element-doped VO2, the recent progress and potential challenges of which are discussed. We devote attention to the crucial roles of element doping in modulating the properties and driving the practicality of VO2, aiming to inspire current research to pioneer new applications of VO2.
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Affiliation(s)
- Yibei Xue
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan
| | - Shu Yin
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan.
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11
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Zheng C, Simpson RE, Tang K, Ke Y, Nemati A, Zhang Q, Hu G, Lee C, Teng J, Yang JKW, Wu J, Qiu CW. Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics. Chem Rev 2022; 122:15450-15500. [PMID: 35894820 DOI: 10.1021/acs.chemrev.2c00171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and chalcogenides when there is a change in external conditions such as temperature and pressure. Along with phase transitions in these phase change materials (PCMs) come dramatic contrasts in various physical properties, which can be engineered to manipulate electrons, photons, polaritons, and phonons at the nanoscale, offering new opportunities for reconfigurable, active nanodevices. In this review, we particularly discuss phase-transition-enabled active nanotechnologies in nonvolatile electrical memory, tunable metamaterials, and metasurfaces for manipulation of both free-space photons and in-plane polaritons, and multifunctional emissivity control in the infrared (IR) spectrum. The fundamentals of PCMs are first introduced to explain the origins and principles of phase transitions. Thereafter, we discuss multiphysical nanodevices for electronic, photonic, and thermal management, attesting to the broad applications and exciting promises of PCMs. Emerging trends and valuable applications in all-optical neuromorphic devices, thermal data storage, and encryption are outlined in the end.
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Affiliation(s)
- Chunqi Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.,NUS Graduate School, National University of Singapore, Singapore 119077, Singapore
| | - Robert E Simpson
- Engineering Product Development, Singapore University of Technology and Design (SUTD), Singapore 487372, Singapore
| | - Kechao Tang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yujie Ke
- Engineering Product Development, Singapore University of Technology and Design (SUTD), Singapore 487372, Singapore
| | - Arash Nemati
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Qing Zhang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guangwei Hu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Joel K W Yang
- Engineering Product Development, Singapore University of Technology and Design (SUTD), Singapore 487372, Singapore.,Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, and Lawrence Berkeley National Laboratory, California 94720, United States
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
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12
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Nonlinear control of switchable wavelength-selective absorption in a one-dimensional photonic crystal including ultrathin phase transition material-vanadium dioxide. Sci Rep 2022; 12:10715. [PMID: 35739149 PMCID: PMC9226042 DOI: 10.1038/s41598-022-14486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 04/01/2022] [Indexed: 11/14/2022] Open
Abstract
Based on the transfer matrix theory, I realize a nearly perfect wavelength-selective absorption of near-IR waves in a one-dimensional defective photonic crystal, \documentclass[12pt]{minimal}
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\begin{document}$$(AB)^ND(BA)^M$$\end{document}(AB)ND(BA)M, containing a vanadium dioxide (VO\documentclass[12pt]{minimal}
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\begin{document}$$_2$$\end{document}2) phase transition layer as a defect. Firstly, the effect of the period numbers, N and M, on the absorption spectrum is studied to achieve a perfect absorption peak. It is shown that optimal period numbers of the structure to maximize the absorption peak are N = 7 and M = 16. Our results also indicate that a narrow-band, almost perfect absorption is achieved due to the symmetry of the structure with respect to VO\documentclass[12pt]{minimal}
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\begin{document}$$_2$$\end{document}2. Also, the absorption amount of the considered structure is about 50 times larger than that of a free-standing VO\documentclass[12pt]{minimal}
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\begin{document}$$_2$$\end{document}2. Furthermore, the absorption peak value and resonant wavelength can be continuously tuned while VO\documentclass[12pt]{minimal}
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\begin{document}$$_2$$\end{document}2 transits from semiconductor to metal phase at 340 K temperature. In addition, how different parameters such as the polarization and incident angle affect the absorption spectra is discussed. Finally, the nonlinear absorption spectra of the structure are graphically demonstrated beside the linear case. The current system can be applied in designing practical tunable optical devices such as IR sensors, limiters, and switches.
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13
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Zheng Z, Zheng Y, Luo Y, Yi Z, Zhang J, Liu Z, Yang W, Yu Y, Wu X, Wu P. A switchable terahertz device combining ultra-wideband absorption and ultra-wideband complete reflection. Phys Chem Chem Phys 2022; 24:2527-2533. [PMID: 35023523 DOI: 10.1039/d1cp04974g] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Terahertz functional devices have been instrumental in the development of terahertz technology. Moreover, the advent of metamaterials has greatly contributed to the advancement of terahertz devices. However, most of today's metamaterials in the terahertz band exhibit poor performance and are mono-functional. This greatly limits the scalability and application potential of the devices. To achieve diversification and tunability of device functionality, we propose a combination of metamaterial structures and vanadium dioxide film. A metamaterial absorber based on the thermotropic phase change material VO2 has been designed. Flexible switching of absorption performance (complete reflection and ultra-broadband perfect absorption) can be achieved through temperature adjustment. Moreover, the perfectly absorbed bandwidth is a staggering 3.3 THz. The thermal tuning of spectral absorbance has a maximal range of 0.01 to 0.999. The shift in absorption properties is explained by the phase change process of vanadium oxide (MIT). The electric field intensity on the absorber surface at different temperatures was monitored and analysed as a way to correlate the VO2 film phase transition process. The impedance matching theory is applied to explain the high level of absorption generated by the absorber. Finally, the effects of the structural parameters on the performance of the absorber are analysed. This work will have many applications in the terahertz field and offers a wide range of ideas for the design of terahertz-enabled devices.
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Affiliation(s)
- Zhipeng Zheng
- Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
| | - Ying Zheng
- Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
| | - Yao Luo
- Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
| | - Zao Yi
- Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
| | - Jianguo Zhang
- Department of Physics, Jinzhong University, Jinzhong 030619, China
| | - Zhimin Liu
- School of Science, East China Jiaotong University, Nanchang 330013, China.
| | - Wenxing Yang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei 434023, China
| | - Yang Yu
- College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
| | - Xianwen Wu
- School of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China
| | - Pinghui Wu
- Fujian Provincial Key Laboratory for Advanced Micro-nano Photonics Technology and Devices, Quanzhou Normal University, Quanzhou 362000, China
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14
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Huang T, Zhang R, Zhang L, Xu P, Shao Y, Yang W, Chen Z, Chen X, Dai N. Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition. RSC Adv 2022; 12:35579-35586. [DOI: 10.1039/d2ra06866d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 12/07/2022] [Indexed: 12/14/2022] Open
Abstract
Adaptive energy-scaling resistive switching with active response and self-regulation via controllable insulator–metal transition shows promise in energy-efficient devices.
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Affiliation(s)
- Tiantian Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Rui Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lepeng Zhang
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China
| | - Peiran Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yunkai Shao
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Wanli Yang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhimin Chen
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China
| | - Xin Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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15
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Guo X, Tan Y, Hu Y, Zafar Z, Liu J, Zou J. High quality VO 2 thin films synthesized from V 2O 5 powder for sensitive near-infrared detection. Sci Rep 2021; 11:21749. [PMID: 34741070 PMCID: PMC8571292 DOI: 10.1038/s41598-021-01025-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Accepted: 10/14/2021] [Indexed: 11/29/2022] Open
Abstract
Vapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.
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Affiliation(s)
- Xitao Guo
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China. .,Engineering Research Center of Nuclear Technology Application, East China University of Technology, Ministry of Education, Nanchang, 330013, China.
| | - Yonghao Tan
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Yupei Hu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Zainab Zafar
- National Centre for Physics, Islamabad, 44000, Pakistan
| | - Jun Liu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Jijun Zou
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China. .,Engineering Research Center of Nuclear Technology Application, East China University of Technology, Ministry of Education, Nanchang, 330013, China.
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16
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Li D, Wang Q, Xu X. Thermal Conductivity of VO 2 Nanowires at Metal-Insulator Transition Temperature. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2428. [PMID: 34578742 PMCID: PMC8472604 DOI: 10.3390/nano11092428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 09/15/2021] [Accepted: 09/16/2021] [Indexed: 11/16/2022]
Abstract
Vanadium dioxide (VO2) nanowires endowed with a dramatic metal-insulator transition have attracted enormous attention. Here, the thermal conductance of VO2 nanowires with different sizes, measured using the thermal bridge method, is reported. A size-dependent thermal conductivity was observed where the thicker nanowire showed a higher thermal conductivity. Meanwhile, the thermal conductivity jump at metal-insulator transition temperature was measured to be much higher in the thicker samples. The dominant heat carriers were phonons both at the metallic and the insulating regimes in the measured samples, which may result from the coexistence of metal and insulator phases at high temperature. Our results provide a window into exploring the mechanism of the metal-insulator transition of VO2 nanowires.
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Affiliation(s)
| | | | - Xiangfan Xu
- Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (D.L.); (Q.W.)
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17
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Shi R, Chen Y, Cai X, Lian Q, Zhang Z, Shen N, Amini A, Wang N, Cheng C. Phase management in single-crystalline vanadium dioxide beams. Nat Commun 2021; 12:4214. [PMID: 34244501 PMCID: PMC8270972 DOI: 10.1038/s41467-021-24527-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 06/24/2021] [Indexed: 11/10/2022] Open
Abstract
A systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2. Control of the phases associated with the metal-insulator transition in VO2 underpins its applications as a phase change material. Here, the authors report phase management by means of oxide inhibitor-assisted growth and present high-performance VO2 actuators based on asymmetric phase transition routes.
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Affiliation(s)
- Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Yong Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Xiangbin Cai
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Qing Lian
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Zhuoqiong Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Nan Shen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW, Australia
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.
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18
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Jiang W, Zheng T, Wu B, Jiao H, Wang X, Chen Y, Zhang X, Peng M, Wang H, Lin T, Shen H, Ge J, Hu W, Xu X, Meng X, Chu J, Wang J. A versatile photodetector assisted by photovoltaic and bolometric effects. LIGHT, SCIENCE & APPLICATIONS 2020; 9:160. [PMID: 32963772 PMCID: PMC7484767 DOI: 10.1038/s41377-020-00396-3] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 07/31/2020] [Accepted: 08/24/2020] [Indexed: 05/13/2023]
Abstract
The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p-n junction exhibits ultrasensitive detection (450 nm-2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.
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Affiliation(s)
- Wei Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
- University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Tan Zheng
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai, 201620 China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hanxue Jiao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xiaoyu Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
- University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Jun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xiaofeng Xu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai, 201620 China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
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19
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Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. CRYSTALS 2020. [DOI: 10.3390/cryst10080631] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO2 electronic domains confined into a 20 nm length scale. The confined domains in VO2 exhibited an intrinsic first-order MIT and IMT with an unusually steep single-step change in the temperature dependent resistivity (R-T) curve. The investigation of the temperature-sweep-rate dependent MIT and IMT properties revealed the statistical transition behavior among the domains. These results are the first demonstration approaching the transition dynamics: the competition between the phase-transition kinetics and experimental temperature-sweep-rate in a nano scale. We proposed a statistical transition model to describe the correlation between the domain behavior and the observable R-T curve, which connect the progression of the MIT and IMT from the macroscopic to microscopic viewpoints.
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20
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Liu M, Yu T, Huang R, Qi W, He Z, Su R. Fabrication of nanohybrids assisted by protein-based materials for catalytic applications. Catal Sci Technol 2020. [DOI: 10.1039/c9cy02466b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Protein units and architectures were applied as supports in the synthesis of metal and metal oxide nanoparticles for environmentally benign catalytic applications.
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Affiliation(s)
- Mingyue Liu
- School of Pharmaceutical and Chemical Engineering
- Taizhou University
- Taizhou 318000
- China
| | - Tao Yu
- State Key Laboratory of Chemical Engineering
- Tianjin Key Laboratory of Membrane Science and Desalination Technology
- School of Chemical Engineering and Technology
- Tianjin University
- Tianjin 300072
| | - Renliang Huang
- School of Environmental Science and Engineering
- Tianjin University
- Tianjin 300072
- P. R. China
| | - Wei Qi
- State Key Laboratory of Chemical Engineering
- Tianjin Key Laboratory of Membrane Science and Desalination Technology
- School of Chemical Engineering and Technology
- Tianjin University
- Tianjin 300072
| | - Zhimin He
- State Key Laboratory of Chemical Engineering
- Tianjin Key Laboratory of Membrane Science and Desalination Technology
- School of Chemical Engineering and Technology
- Tianjin University
- Tianjin 300072
| | - Rongxin Su
- State Key Laboratory of Chemical Engineering
- Tianjin Key Laboratory of Membrane Science and Desalination Technology
- School of Chemical Engineering and Technology
- Tianjin University
- Tianjin 300072
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21
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Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope. ELECTRONICS 2019. [DOI: 10.3390/electronics8020151] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO2 (NP-VO2) using the electric field effect in a metal-oxide-VO2 field-effect transistor (MOVFET) at room temperature was investigated for the first time. The IMT induced by current in NP-VO2 is a function of nano-particle size and was studied first using the conducting atomic force microscope (cAFM) current-voltage (I-V) measurements. NP-VO2 switching threshold voltage (VT), leakage current (Ileakage), and the sub-threshold slope of their conductivity (Sc) were all determined. The cAFM data had a large scatter. However, VT increased as a function of particle height (h) approximately as VT(V) = 0.034 h, while Ileakage decreased as a function of h approximately as Ileakage (A) = 3.4 × 10−8e−h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and a tunneling (carrier) decay constant of ~9.1 nm were determined. Sc increased as a function of h approximately as Sc (mV/decade) = 2.1 × 10−3eh/6 and was around 0.6 mV/decade at h~34 nm. MOVFETs composed of Pt drain, source and gate electrodes, HfO2 gate oxide, and NP-VO2 channels were then fabricated and showed gate voltage dependent drain-source switching voltage and current (IDS). The subthreshold slope (St) of drain-source current (IDS) varied from 42 mV/decade at VG = −5 V to 54 mV/decade at VG = +5 V.
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22
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Zhou J, Xie M, Cui A, Zhou B, Jiang K, Shang L, Hu Z, Chu J. Manipulating Behaviors from Heavy Tungsten Doping on Interband Electronic Transition and Orbital Structure Variation of Vanadium Dioxide Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:30548-30557. [PMID: 30105904 DOI: 10.1021/acsami.8b09909] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Vanadium dioxide (VO2) with a metal-insulator transition (MIT) has been supposed as a candidate for optoelectronic devices. However, the MIT temperature ( TMIT) above room temperature limits its application scope. Here, high-quality V1- xW xO2 films have been prepared by pulsed laser deposition. On the basis of temperature-dependent transmittance and Raman spectra, it was found that TMIT increases from 241 to 279 K, when increasing the doping concentration in the range of 0.16 ≤ x ≤ 0.20. The interband electronic transitions and orbital structures of V1- xW xO2 films have been investigated via fitting transmittance spectra. Moreover, with the aid of first-principles calculations, an effective orbital theory has been proposed to explain the unique phenomenon. When the W doping concentration increases, the π* and dII orbitals shift toward the π orbital. Meanwhile, the energy gap between the π* and dII orbitals decreases at the insulator state. It indicates that the bandwidth is narrowed, which impedes MIT. In addition, the overlap of the π* and dII orbitals increases at the metal state, and more doping electrons occupy the π* orbital induced by increasing W doping concentration. It manifests that the Mott insulating state becomes more stable, which further improves TMIT. The present work provides a feasible approach to tune TMIT via orbital variation and can be helpful in developing the potential VO2-based optoelectronic devices.
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Affiliation(s)
- Jiaoyan Zhou
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Mingzhang Xie
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Anyang Cui
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Bin Zhou
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Kai Jiang
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Liyan Shang
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Zhigao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
- Collaborative Innovation Center of Extreme Optics , Shanxi University , Taiyuan , Shanxi 030006 , China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
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23
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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24
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Riapanitra A, Asakura Y, Cao W, Noda Y, Yin S. Supercritical temperature synthesis of fluorine-doped VO 2(M) nanoparticle with improved thermochromic property. NANOTECHNOLOGY 2018; 29:244005. [PMID: 29547395 DOI: 10.1088/1361-6528/aab752] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Fluorine-doped VO2(M) nanoparticles have been successfully synthesized using the hydrothermal method at a supercritical temperature of 490 °C. The pristine VO2(M) has the critical phase transformation temperature of 64 °C. The morphology and homogeneity of the monoclinic structure VO2(M) were adopted by the fluorine-doped system. The obtained particle size of the samples is smaller at the higher concentration of anion doping. The best reduction of critical temperature was achieved by fluorine doping of 0.13% up to 48 °C. The thin films of the fluorine-doped VO2(M) showed pronounced thermochromic property and therefore are suitable for smart window applications.
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Affiliation(s)
- Anung Riapanitra
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
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25
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Averyanov DV, Parfenov OE, Tokmachev AM, Karateev IA, Kondratev OA, Taldenkov AN, Platunov MS, Wilhelm F, Rogalev A, Storchak VG. Fine structure of metal-insulator transition in EuO resolved by doping engineering. NANOTECHNOLOGY 2018; 29:195706. [PMID: 29469062 DOI: 10.1088/1361-6528/aab16e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Metal-insulator transitions (MITs) offer new functionalities for nanoelectronics. However, ongoing attempts to control the resistivity by external stimuli are hindered by strong coupling of spin, charge, orbital and lattice degrees of freedom. This difficulty presents a quest for materials which exhibit MIT caused by a single degree of freedom. In the archetypal ferromagnetic semiconductor EuO, magnetic orders dominate the MIT. Here we report a new approach to take doping under control in this material on the nanoscale: formation of oxygen vacancies is strongly suppressed to exhibit the highest MIT resistivity jump and magnetoresistance among thin films. The nature of the MIT is revealed in Gd doped films. The critical doping is determined to be more than an order of magnitude lower than in all previous studies. In lightly doped films, a remarkable thermal hysteresis in resistivity is discovered. It extends over 100 K in the paramagnetic phase reaching 3 orders of magnitude. In the warming mode, the MIT is shown to be a two-step process. The resistivity patterns are consistent with an active role of magnetic polarons-formation of a narrow band and its thermal destruction. High-temperature magnetic polaron effects include large negative magnetoresistance and ferromagnetic droplets revealed by x-ray magnetic circular dichroism. Our findings have wide-range implications for the understanding of strongly correlated oxides and establish fundamental benchmarks to guide theoretical models of the MIT.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center 'Kurchatov Institute', Kurchatov Sq. 1, Moscow 123182, Russia
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26
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Jo YR, Myeong SH, Kim BJ. Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition. RSC Adv 2018; 8:5158-5165. [PMID: 35542437 PMCID: PMC9078109 DOI: 10.1039/c7ra10865f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2017] [Revised: 09/13/2018] [Accepted: 01/23/2018] [Indexed: 11/21/2022] Open
Abstract
Among the techniques to create VO2 nanostructures, the sol–gel method is the most facile and benefits from simple, manipulable synthetic parameters. Here, by utilizing various TEM techniques, we report the sequential morphological evolution of VO2 nanostructures in a sol–gel film spin-coated on a customized TEM grid, which underwent oxygen reduction as the annealing temperature increased. In situ TEM dark-field imaging and Raman spectroscopy allowed us to confirm the sharp phase transition behavior of an individual nanowire by illustrating the effect of electrode-clamping-induced tensile stress on the nucleation of the R phase from the M1 phase. The electrical transport properties of a single-nanowire device fabricated on a customized TEM grid showed excellent control of the stoichiometry and crystallinity of the wire. These results offer critical information for preparing tailored VO2 nanostructures with advanced transition properties by the sol–gel method to enable the fabrication of scalable flexible devices. The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.![]()
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Affiliation(s)
- Y.-R. Jo
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology (GIST)
- Gwangju
- Korea
| | - S.-H. Myeong
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology (GIST)
- Gwangju
- Korea
| | - B.-J. Kim
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology (GIST)
- Gwangju
- Korea
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27
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Sohn JI, Cha SN, Son SB, Kim JM, Welland ME, Hong WK. Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO 2 nanobeams. NANOSCALE 2017; 9:8200-8206. [PMID: 28580984 DOI: 10.1039/c7nr00318h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.
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Affiliation(s)
- Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
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28
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Imaging metal-like monoclinic phase stabilized by surface coordination effect in vanadium dioxide nanobeam. Nat Commun 2017; 8:15561. [PMID: 28613281 PMCID: PMC5474733 DOI: 10.1038/ncomms15561] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2016] [Accepted: 04/05/2017] [Indexed: 11/24/2022] Open
Abstract
In correlated systems, intermediate states usually appear transiently across phase transitions even at the femtosecond scale. It therefore remains an open question how to determine these intermediate states—a critical issue for understanding the origin of their correlated behaviour. Here we report a surface coordination route to successfully stabilize and directly image an intermediate state in the metal-insulator transition of vanadium dioxide. As a prototype metal-insulator transition material, we capture an unusual metal-like monoclinic phase at room temperature that has long been predicted. Coordinate bonding of L-ascorbic acid molecules with vanadium dioxide nanobeams induces charge-carrier density reorganization and stabilizes metallic monoclinic vanadium dioxide, unravelling orbital-selective Mott correlation for gap opening of the vanadium dioxide metal–insulator transition. Our study contributes to completing phase-evolution pathways in the metal-insulator transition process, and we anticipate that coordination chemistry may be a powerful tool for engineering properties of low-dimensional correlated solids. Identifying intermediates during phase transitions is critical for our understanding of correlated materials, but difficult to achieve experimentally. Here, the authors report a surface coordination route to stabilize and directly image a phase-transition intermediate during the metal-insulator transition in vanadium dioxide.
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29
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Fisher B, Patlagan L. Switching VO₂ Single Crystals and Related Phenomena: Sliding Domains and Crack Formation. MATERIALS 2017; 10:ma10050554. [PMID: 28772918 PMCID: PMC5459034 DOI: 10.3390/ma10050554] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2017] [Revised: 05/09/2017] [Accepted: 05/11/2017] [Indexed: 11/16/2022]
Abstract
VO2 is the prototype material for insulator–metal transition (IMT). Its transition at TIMT = 340 K is fast and consists of a large resistance jump (up to approximately five orders of magnitude), a large change in its optical properties in the visible range, and symmetry change from monoclinic to tetragonal (expansion by 1% along the tetragonal c-axis and 0.5% contraction in the perpendicular direction). It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. Static or dynamic domain patterns in the mixed-state of self-heated single crystals during electric-field induced switching are in strong contrast with the percolative nature of the mixed state in switching VO2 films. The most impressive effect—so far unique to VO2—is the sliding of narrow semiconducting domains within a metallic background in the positive sense of the electric current. Here we show images from videos obtained using optical microscopy for sliding domains along VO2 needles and confirm a relation suggested in the past for their velocity. We also show images for the disturbing damage induced by the structural changes in switching VO2 crystals obtained for only a few current–voltage cycles.
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30
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Real-time atomistic observation of structural phase transformations in individual hafnia nanorods. Nat Commun 2017; 8:15316. [PMID: 28497788 PMCID: PMC5437304 DOI: 10.1038/ncomms15316] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2016] [Accepted: 03/20/2017] [Indexed: 11/10/2022] Open
Abstract
High-temperature phases of hafnium dioxide have exceptionally high dielectric constants and large bandgaps, but quenching them to room temperature remains a challenge. Scaling the bulk form to nanocrystals, while successful in stabilizing the tetragonal phase of isomorphous ZrO2, has produced nanorods with a twinned version of the room temperature monoclinic phase in HfO2. Here we use in situ heating in a scanning transmission electron microscope to observe the transformation of an HfO2 nanorod from monoclinic to tetragonal, with a transformation temperature suppressed by over 1000°C from bulk. When the nanorod is annealed, we observe with atomic-scale resolution the transformation from twinned-monoclinic to tetragonal, starting at a twin boundary and propagating via coherent transformation dislocation; the nanorod is reduced to hafnium on cooling. Unlike the bulk displacive transition, nanoscale size-confinement enables us to manipulate the transformation mechanism, and we observe discrete nucleation events and sigmoidal nucleation and growth kinetics. The high-temperature tetragonal phase of HfO2 is technologically useful but difficult to stabilize at room temperature. Here, the authors observe in real-time the transformation of a HfO2 nanorod from its room temperature to tetragonal phase, at 1000° less than its bulk temperature, suggesting that size confinement may kinetically trap this phase.
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31
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Hardy WJ, Ji H, Paik H, Schlom DG, Natelson D. Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:185601. [PMID: 28362641 DOI: 10.1088/1361-648x/aa674d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in H x VO2, a poor metal (in violation of the Mott-Ioffe-Regel limit) stabilized by the suppression of the VO2 metal-insulator transition through atomic hydrogen doping. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed doping level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals.
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Affiliation(s)
- Will J Hardy
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, 6100 Main St., Houston, TX 77005, United States of America
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32
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Fadlelmula MM, Sürmeli EC, Ramezani M, Kasırga TS. Effects of Thickness on the Metal-Insulator Transition in Free-Standing Vanadium Dioxide Nanocrystals. NANO LETTERS 2017; 17:1762-1767. [PMID: 28221803 DOI: 10.1021/acs.nanolett.6b05067] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Controlling solid state phase transitions via external stimuli offers rich physics along with possibilities of unparalleled applications in electronics and optics. The well-known metal-insulator transition (MIT) in vanadium dioxide (VO2) is one instance of such phase transitions emerging from strong electronic correlations. Inducing the MIT using electric field has been investigated extensively for the applications in electrical and ultrafast optical switching. However, as the Thomas-Fermi screening length is very short, for considerable alteration in the material's properties with electric field induced MIT, crystals below 10 nm are needed. So far, the only way to achieve thin crystals of VO2 has been via epitaxial growth techniques. Yet, stress due to lattice mismatch as well as interdiffusion with the substrate complicate the studies. Here, we show that free-standing vapor-phase grown crystals of VO2 can be milled down to the desired thickness using argon ion-beam milling without compromising their electronic and structural properties. Among our results, we show that even below 4 nm thickness the MIT persists and the transition temperature is lowered in two-terminal devices as the crystal gets thinner. The findings in this Letter can be applied to similar strongly correlated materials to study quantum confinement effects.
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Affiliation(s)
- Mustafa M Fadlelmula
- National Nanotechnology Research Center, ‡Institute of Materials Science and Nanotechnology, and §Department of Physics, Bilkent University , Bilkent, Ankara 06800, Turkey
| | - Engin C Sürmeli
- National Nanotechnology Research Center, ‡Institute of Materials Science and Nanotechnology, and §Department of Physics, Bilkent University , Bilkent, Ankara 06800, Turkey
| | - Mehdi Ramezani
- National Nanotechnology Research Center, ‡Institute of Materials Science and Nanotechnology, and §Department of Physics, Bilkent University , Bilkent, Ankara 06800, Turkey
| | - T Serkan Kasırga
- National Nanotechnology Research Center, ‡Institute of Materials Science and Nanotechnology, and §Department of Physics, Bilkent University , Bilkent, Ankara 06800, Turkey
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34
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Zhang Z, Guo H, Ding W, Zhang B, Lu Y, Ke X, Liu W, Chen F, Sui M. Nanoscale Engineering in VO 2 Nanowires via Direct Electron Writing Process. NANO LETTERS 2017; 17:851-855. [PMID: 28080071 DOI: 10.1021/acs.nanolett.6b04118] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO2) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO2. This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.
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Affiliation(s)
- Zhenhua Zhang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Wenqiang Ding
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Bin Zhang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Yue Lu
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Xiaoxing Ke
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Weiwei Liu
- Beijing Computational Science Research Center , Beijing 100084, China
| | - Furong Chen
- Department of Engineering and System Science, National Tsing Hua University , Hsinchu 300, Taiwan
| | - Manling Sui
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
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35
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Lee S, Hippalgaonkar K, Yang F, Hong J, Ko C, Suh J, Liu K, Wang K, Urban JJ, Zhang X, Dames C, Hartnoll SA, Delaire O, Wu J. Anomalously low electronic thermal conductivity in metallic vanadium dioxide. Science 2017; 355:371-374. [DOI: 10.1126/science.aag0410] [Citation(s) in RCA: 230] [Impact Index Per Article: 32.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2016] [Accepted: 12/22/2016] [Indexed: 01/18/2023]
Affiliation(s)
- Sangwook Lee
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Kedar Hippalgaonkar
- Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, 08-03, 138634 Singapore
| | - Fan Yang
- Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jiawang Hong
- School of Aerospace Engineering and Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, China
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Changhyun Ko
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Joonki Suh
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Kai Liu
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, LBNL, Berkeley, CA 94720, USA
| | - Kevin Wang
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Jeffrey J. Urban
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Xiang Zhang
- Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, LBNL, Berkeley, CA 94720, USA
- Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Chris Dames
- Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, LBNL, Berkeley, CA 94720, USA
| | - Sean A. Hartnoll
- Department of Physics, Stanford University, Stanford, CA 94305, USA
| | - Olivier Delaire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708, USA
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, LBNL, Berkeley, CA 94720, USA
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36
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Zhu J, Huang A, Ma H, Chen Y, Zhang S, Ji S, Bao S, Jin P. Hybrid films of VO2 nanoparticles and a nickel(ii)-based ligand exchange thermochromic system: excellent optical performance with a temperature responsive colour change. NEW J CHEM 2017. [DOI: 10.1039/c6nj03369e] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This work reports a VO2/NLETS hybrid film with a 127% increase in ΔTsol and an evident temperature-responsive colour change.
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Affiliation(s)
- Jingting Zhu
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Aibin Huang
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Haibin Ma
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Yunxiang Chen
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Sanpei Zhang
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- University of Chinese Academy of Sciences
| | - Shidong Ji
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
| | - Shanhu Bao
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
| | - Ping Jin
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Shanghai
- China
- National Institute of Advanced Industrial Science and Technology (AIST)
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37
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Tao Z, Zhou F, Han TRT, Torres D, Wang T, Sepulveda N, Chang K, Young M, Lunt RR, Ruan CY. The nature of photoinduced phase transition and metastable states in vanadium dioxide. Sci Rep 2016; 6:38514. [PMID: 27982066 PMCID: PMC5159834 DOI: 10.1038/srep38514] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2016] [Accepted: 11/10/2016] [Indexed: 11/30/2022] Open
Abstract
Photoinduced threshold switching processes that lead to bistability and the formation of metastable phases in photoinduced phase transition of VO2 are elucidated through ultrafast electron diffraction and diffusive scattering techniques with varying excitation wavelengths. We uncover two distinct regimes of the dynamical phase change: a nearly instantaneous crossover into an intermediate state and its decay led by lattice instabilities over 10 ps timescales. The structure of this intermediate state is identified to be monoclinic, but more akin to M2 rather than M1 based on structure refinements. The extinction of all major monoclinic features within just a few picoseconds at the above-threshold-level (~20%) photoexcitations and the distinct dynamics in diffusive scattering that represents medium-range atomic fluctuations at two photon wavelengths strongly suggest a density-driven and nonthermal pathway for the initial process of the photoinduced phase transition. These results highlight the critical roles of electron correlations and lattice instabilities in driving and controlling phase transformations far from equilibrium.
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Affiliation(s)
- Zhensheng Tao
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
| | - Faran Zhou
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
| | - Tzong-Ru T Han
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
| | - David Torres
- Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 USA
| | - Tongyu Wang
- Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 USA
| | - Nelson Sepulveda
- Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 USA
| | - Kiseok Chang
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
| | - Margaret Young
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824 USA
| | - Richard R Lunt
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA.,Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824 USA
| | - Chong-Yu Ruan
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
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38
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Wu H, Li M, Zhong L, Luo YY, Li GH. Electrochemical Synthesis of Amorphous VO2Colloids and Their Rapid Thermal Transforming to VO2(M) Nanoparticles with Good Thermochromic Performance. Chemistry 2016; 22:17627-17634. [DOI: 10.1002/chem.201604101] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2016] [Indexed: 11/06/2022]
Affiliation(s)
- Hao Wu
- Key Laboratory of Materials Physics and; Anhui Key Laboratory of Nanomaterials and Nanostructures; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China
| | - Ming Li
- Key Laboratory of Materials Physics and; Anhui Key Laboratory of Nanomaterials and Nanostructures; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China
| | - Li Zhong
- Key Laboratory of Materials Physics and; Anhui Key Laboratory of Nanomaterials and Nanostructures; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China
- School of Chemistry and Materials Science; University of Science and Technology of China; Hefei 230026 P.R. China
| | - Yuan Yuan Luo
- Key Laboratory of Materials Physics and; Anhui Key Laboratory of Nanomaterials and Nanostructures; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China
| | - Guang Hai Li
- Key Laboratory of Materials Physics and; Anhui Key Laboratory of Nanomaterials and Nanostructures; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P.R. China
- School of Chemistry and Materials Science; University of Science and Technology of China; Hefei 230026 P.R. China
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Jo YR, Kim MW, Kim BJ. Direct correlation of structural and electrical properties of electron-doped individual VO 2 nanowires on devised TEM grids. NANOTECHNOLOGY 2016; 27:435704. [PMID: 27658734 DOI: 10.1088/0957-4484/27/43/435704] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nano-scale VO2 wires with controlled parameters such as electron-doping have attracted intense interest due to their capability of suppressing the temperature of the metal-insulator transition (MIT). However, because their diameters are smaller than the spatial resolutions of the conventional measuring equipment, the ability to perform a thorough examination of the wires has been hindered. Here, we report the fabrication of a transmission electron microscopy (TEM) grid with an optimum design of Si3N4 windows on which the photolithography for individual electron-doped VO2 nanowire devices can be safely accomplished, allowing the cross-examination of the structural and electrical properties. TEM dark-field imaging was used to quantitatively investigate the fractions of rutile and M1 phases, and their lattice alignments were observed using high-resolution TEM (HRTEM) with small area diffraction. Moreover, electron energy loss spectroscopy (EELS) revealed that the rutile domain would be created by the strain induced by oxygen vacancies. Importantly, we successfully tuned the transition temperature by changing the rutile fraction while maintaining a high level of resistivity change. The resistivity at room temperature linearly decreased with the rutile fraction, following a simple model. Furthermore, the T dependence of the threshold voltage can be attributed to the Joule heating, exhibiting an identical thermal dependence, irrespective of the rutile fraction.
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Affiliation(s)
- Y-R Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, Korea
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40
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Kasırga TS, Coy JM, Park JH, Cobden DH. Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2. NANOTECHNOLOGY 2016; 27:345708. [PMID: 27454751 DOI: 10.1088/0957-4484/27/34/345708] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen doping in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 °C. We observe hydrogen diffusion along the rutile c-axis but not perpendicular to it, making this a highly one-dimensional diffusion system. We obtain an activated diffusion coefficient, [Formula: see text] applicable in metallic phase. In addition, we observe dramatic supercooling of the hydrogen-induced metallic phase and spontaneous segregation of the hydrogen into stripes implying that the diffusion process is highly nonlinear, even in the absence of defects. Similar complications may occur in hydrogen motion in other materials but are not revealed by conventional measurement techniques.
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Affiliation(s)
- T Serkan Kasırga
- Department of Physics, University of Washington, Seattle, WA 98195, USA. UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
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41
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Kim MW, Ha SS, Seo O, Noh DY, Kim BJ. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters. NANO LETTERS 2016; 16:4074-4081. [PMID: 27253750 DOI: 10.1021/acs.nanolett.6b00719] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT.
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Affiliation(s)
- Min-Woo Kim
- School of Materials Science and Engineering and ‡Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, South Korea
| | - Sung-Soo Ha
- School of Materials Science and Engineering and ‡Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, South Korea
| | - Okkyun Seo
- School of Materials Science and Engineering and ‡Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, South Korea
| | - Do Young Noh
- School of Materials Science and Engineering and ‡Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, South Korea
| | - Bong-Joong Kim
- School of Materials Science and Engineering and ‡Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, South Korea
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42
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Strelcov E, Ievlev A, Belianinov A, Tselev A, Kolmakov A, Kalinin SV. Local coexistence of VO2 phases revealed by deep data analysis. Sci Rep 2016; 6:29216. [PMID: 27384473 PMCID: PMC4935893 DOI: 10.1038/srep29216] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2016] [Accepted: 06/13/2016] [Indexed: 11/25/2022] Open
Abstract
We report a synergistic approach of micro-Raman spectroscopic mapping and deep data analysis to study the distribution of crystallographic phases and ferroelastic domains in a defected Al-doped VO2 microcrystal. Bayesian linear unmixing revealed an uneven distribution of the T phase, which is stabilized by the surface defects and uneven local doping that went undetectable by other classical analysis techniques such as PCA and SIMPLISMA. This work demonstrates the impact of information recovery via statistical analysis and full mapping in spectroscopic studies of vanadium dioxide systems, which is commonly substituted by averaging or single point-probing approaches, both of which suffer from information misinterpretation due to low resolving power.
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Affiliation(s)
- Evgheni Strelcov
- Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.,Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.,Maryland Nanocenter, University of Maryland, College Park, MD 20742, USA
| | - Anton Ievlev
- Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alex Belianinov
- Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander Tselev
- Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Andrei Kolmakov
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Sergei V Kalinin
- Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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43
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Yamin T, Wissberg S, Cohen H, Cohen-Taguri G, Sharoni A. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching. ACS APPLIED MATERIALS & INTERFACES 2016; 8:14863-14870. [PMID: 27183029 DOI: 10.1021/acsami.6b02859] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.
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Affiliation(s)
| | | | - Hagai Cohen
- Department of Chemical Research Support, Weizmann Institute of Science , Rehovot, Israel IL-76100
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44
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Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide. Sci Rep 2016; 6:26391. [PMID: 27211303 PMCID: PMC4876449 DOI: 10.1038/srep26391] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2016] [Accepted: 04/28/2016] [Indexed: 12/03/2022] Open
Abstract
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.
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45
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Dönges SA, Khatib O, O'Callahan BT, Atkin JM, Park JH, Cobden D, Raschke MB. Ultrafast Nanoimaging of the Photoinduced Phase Transition Dynamics in VO2. NANO LETTERS 2016; 16:3029-35. [PMID: 27096877 DOI: 10.1021/acs.nanolett.5b05313] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Many phase transitions in correlated matter exhibit spatial inhomogeneities with expected yet unexplored effects on the associated ultrafast dynamics. Here we demonstrate the combination of ultrafast nondegenerate pump-probe spectroscopy with far from equilibrium excitation, and scattering scanning near-field optical microscopy (s-SNOM) for ultrafast nanoimaging. In a femtosecond near-field near-IR (NIR) pump and mid-IR (MIR) probe study, we investigate the photoinduced insulator-to-metal (IMT) transition in nominally homogeneous VO2 microcrystals. With pump fluences as high as 5 mJ/cm(2), we can reach three distinct excitation regimes. We observe a spatial heterogeneity on ∼50-100 nm length scales in the fluence-dependent IMT dynamics ranging from <100 fs to ∼1 ps. These results suggest a high sensitivity of the IMT with respect to small local variations in strain, doping, or defects that are difficult to discern microscopically. We provide a perspective with the distinct requirements and considerations of ultrafast spatiotemporal nanoimaging of phase transitions in quantum materials.
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Affiliation(s)
- Sven A Dönges
- Department of Physics, Department of Chemistry, and JILA, University of Colorado , Boulder, Colorado 80309, United States
| | - Omar Khatib
- Department of Physics, Department of Chemistry, and JILA, University of Colorado , Boulder, Colorado 80309, United States
| | - Brian T O'Callahan
- Department of Physics, Department of Chemistry, and JILA, University of Colorado , Boulder, Colorado 80309, United States
| | - Joanna M Atkin
- Department of Chemistry, University of North Carolina , Chapel Hill, North Carolina 27514, United States
| | - Jae Hyung Park
- Department of Physics, University of Washington , Seattle, Washington 98195, United States
| | - David Cobden
- Department of Physics, University of Washington , Seattle, Washington 98195, United States
| | - Markus B Raschke
- Department of Physics, Department of Chemistry, and JILA, University of Colorado , Boulder, Colorado 80309, United States
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46
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Brady NF, Appavoo K, Seo M, Nag J, Prasankumar RP, Haglund RF, Hilton DJ. Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:125603. [PMID: 26932975 DOI: 10.1088/0953-8984/28/12/125603] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on ultrafast optical investigations of the light-induced insulator-to-metal phase transition in vanadium dioxide with controlled disorder generated by substrate mismatch. These results reveal common dynamics of this optically-induced phase transition that are independent of this disorder. Above the fluence threshold for completing the transition to the rutile crystalline phase, we find a common time scale, independent of sample morphology, of 40.5 ± 2 ps that is consistent with nucleation and growth dynamics of the R phase from the parent M1 ground state.
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Affiliation(s)
- Nathaniel F Brady
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA
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47
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Huber MA, Plankl M, Eisele M, Marvel RE, Sandner F, Korn T, Schüller C, Haglund RF, Huber R, Cocker TL. Ultrafast Mid-Infrared Nanoscopy of Strained Vanadium Dioxide Nanobeams. NANO LETTERS 2016; 16:1421-7. [PMID: 26771106 DOI: 10.1021/acs.nanolett.5b04988] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO2) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature (∼341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO2 insulating phases by tuning the competition between electron and lattice degrees of freedom. It can even break the mesoscopic spatial symmetry of the transition, leading to a quasiperiodic ordering of insulating and metallic nanodomains. Nanostructuring of strained VO2 could potentially yield unique components for future devices. However, the most spectacular property of VO2--its ultrafast transition--has not yet been studied on the length scale of its phase heterogeneity. Here, we use ultrafast near-field microscopy in the mid-infrared to study individual, strained VO2 nanobeams on the 10 nm scale. We reveal a previously unseen correlation between the local steady-state switching susceptibility and the local ultrafast response to below-threshold photoexcitation. These results suggest that it may be possible to tailor the local photoresponse of VO2 using strain and thereby realize new types of ultrafast nano-optical devices.
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Affiliation(s)
- M A Huber
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - M Plankl
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - M Eisele
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - R E Marvel
- Department of Physics and Astronomy and Interdisciplinary Materials Science Program, Vanderbilt University , Nashville, Tennessee 37235-1807, United States
| | - F Sandner
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - T Korn
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - C Schüller
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - R F Haglund
- Department of Physics and Astronomy and Interdisciplinary Materials Science Program, Vanderbilt University , Nashville, Tennessee 37235-1807, United States
| | - R Huber
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
| | - T L Cocker
- Department of Physics, University of Regensburg , 93040 Regensburg, Germany
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48
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Yoon J, Kim H, Chen X, Tamura N, Mun BS, Park C, Ju H. Controlling the Temperature and Speed of the Phase Transition of VO2 Microcrystals. ACS APPLIED MATERIALS & INTERFACES 2016; 8:2280-2286. [PMID: 26713678 DOI: 10.1021/acsami.5b11144] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigated the control of two important parameters of vanadium dioxide (VO2) microcrystals, the phase transition temperature and speed, by varying microcrystal width. By using the reflectivity change between insulating and metallic phases, phase transition temperature is measured by optical microscopy. As the width of square cylinder-shaped microcrystals decreases from ∼70 to ∼1 μm, the phase transition temperature (67 °C for bulk) varied as much as 26.1 °C (19.7 °C) during heating (cooling). In addition, the propagation speed of phase boundary in the microcrystal, i.e., phase transition speed, is monitored at the onset of phase transition by using the high-speed resistance measurement. The phase transition speed increases from 4.6 × 10(2) to 1.7 × 10(4) μm/s as the width decreases from ∼50 to ∼2 μm. While the statistical description for a heterogeneous nucleation process explains the size dependence on phase transition temperature of VO2, the increase of effective thermal exchange process is responsible for the enhancement of phase transition speed of small VO2 microcrystals. Our findings not only enhance the understanding of VO2 intrinsic properties but also contribute to the development of innovative electronic devices.
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Affiliation(s)
- Joonseok Yoon
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
| | - Howon Kim
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
| | - Xian Chen
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology , Hong Kong 999077, China
| | - Nobumichi Tamura
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | | | - Changwoo Park
- Division of Applied Chemistry and Biotechnology, Hanbat National University , Daejeon 34158, Republic of Korea
- Advanced Nano Products , Sejong, 30077, Republic of Korea
| | - Honglyoul Ju
- Department of Physics, Yonsei University , Seoul 03722, Republic of Korea
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49
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Zhu JT, Huang AB, Ma HB, Bao SH, Ji SD, Jin P. Solar-thermochromism of a hybrid film of VO2 nanoparticles and CoII–Br–TMP complexes. RSC Adv 2016. [DOI: 10.1039/c6ra14232j] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
This work reports a VO2/CoII–Br–TMP hybrid film with excellent optical performance and an evident temperature-dependent colour change.
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Affiliation(s)
- J. T. Zhu
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
- University of Chinese Academy of Sciences
| | - A. B. Huang
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
- University of Chinese Academy of Sciences
| | - H. B. Ma
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
- University of Chinese Academy of Sciences
| | - S. H. Bao
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
| | - S. D. Ji
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
| | - P. Jin
- Shanghai Institute of Ceramics
- Chinese Academy of Sciences
- Changning
- China
- National Institute of Advanced Industrial Science and Technology (AIST)
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50
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Wang N, Chew Shun NT, Duchamp M, Dunin-Borkowski RE, Li Z, Long Y. Effect of lanthanum doping on modulating the thermochromic properties of VO2thin films. RSC Adv 2016. [DOI: 10.1039/c6ra09514c] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
La doping is found to be effective for enhancing the luminous transmission and solar modulating abilities simultaneously for VO2thin films, and they exhibit a lowτcreducing rate of −1.1 °C per at%.
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Affiliation(s)
- Ning Wang
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore
| | - Nigel Tan Chew Shun
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore
| | - Martial Duchamp
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Grünberg Institute (PGI)
- Forschungszentrum Jülich
- Germany
| | - Rafal E. Dunin-Borkowski
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Grünberg Institute (PGI)
- Forschungszentrum Jülich
- Germany
| | - Zhong Li
- School of Mechanical and Aerospace Engineering
- Nanyang Technological University
- 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore
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