A current-driven single-atom memory

Electron beam-induced demetallation of Fe, Co, Ni, Cu, Zn, Pd, and Pt metalloporphyrins: insights in e-beam chemistry and metal cluster formations

Electron beams are versatile tools for nanoscale fabrication processes, however, the underlying e-beam chemistry remains in its infancy. Through operando transmission electron microscopy investigations, we elucidate a redox-driven cargo release of individual metal atoms triggered by electron beams. The chosen organic delivery molecule, tetraphenylporphyrin (TPP), proves highly versatile, forming complexes with nearly all metals from the periodic table and being easily processed in solution. A comprehensive cinematographic analysis of the dynamics of single metal atoms confirms the nearly instantaneous ejection of complexed metal atoms under an 80 kV electron beam, underscoring the system's broad versatility. Providing mechanistic insights, we employ density functional theory to support the proposed reductive demetallation pathway facilitated by secondary electrons, contributing novel perspectives to electron beam-mediated chemical reaction mechanisms. Lastly, our findings demonstrate that all seven metals investigated form nanoclusters once ejected from TPP, highlighting the method's potential for studying and developing sustainable single-atom and nanocluster catalysts.

Atomically Precise Manufacturing of Silicon Electronics

Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

Memristive devices have been demonstrated to exhibit quantum conductance effects at room temperature. In these devices, a detailed understanding of the relationship between electrochemical processes and ionic dynamic underlying the formation of atomic-sized conductive filaments and corresponding electronic transport properties in the quantum regime still represents a challenge. In this work, we report on quantum conductance effects in single memristive Ag nanowires (NWs) through a combined experimental and simulation approach that combines advanced classical molecular dynamics (MD) algorithms and quantum transport simulations (DFT). This approach provides new insights on quantum conductance effects in memristive devices by unravelling the intrinsic relationship between electronic transport and atomic dynamic reconfiguration of the nanofilment, by shedding light on deviations from integer multiples of the fundamental quantum of conductance depending on peculiar dynamic trajectories of nanofilament reconfiguration and on conductance fluctuations relying on atomic rearrangement due to thermal fluctuations.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties

Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two- and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.

Three-Bit Digital Comparator Based on Intracell Diffusion of Silver Single Atom

Using a single atom to construct electronic components is a promising route for the microminiaturization of electronic instruments. However, effective control of the intrinsic property in a molecular/atomic prototype component is full of challenges. Here, we present that the intracell diffusion behavior of a target Ag single atom within a unit cell of Si reconstruction is controllably modulated by constructing Ag nanoclusters and arrays in the neighboring cells. Moreover, a three-bit digital comparator device is fabricated on the basis of the diffusion time of a Ag single atom that can be effectively regulated by using the intercoupling between the target Ag monomer and the surrounding metal arrays.

Phase Transition to Heptagonal-Cluster-Packed Structure of Gold Nanoribbons

Transforming periodic crystals into packing of atomic clusters is attracting enormous interest for both fundamental research and potential application, but it still remains a big challenge for noble metals. Here, we have observed gold nanoribbons packed with heptagonal clusters, where every two or three constituent clusters connect edge-to-edge with their neighbors. This is the first reported metallic structure packed from building blocks with heptagonal symmetry. The cluster-packed nanoribbons transited from two-dimensional hexagonal structure under tensile condition and a reverse transition occurred by compression, resolved by in situ observation. The cluster-packed structure was stabilized by the s-d orbital hybridization. Theoretical calculations demonstrate that the conductance of the ribbons undergoes a quantized change from 6 to 4 G₀ (G₀ = 2e²/h) during the phase transition and backward for the reverse transition.

Stochastic Spiking Behavior in Neuromorphic Networks Enables True Random Number Generation

There is currently a great deal of interest in the use of nanoscale devices to emulate the behaviors of neurons and synapses and to facilitate brain-inspired computation. Here, it is shown that percolating networks of nanoparticles exhibit stochastic spiking behavior that is strikingly similar to that observed in biological neurons. The spiking rate can be controlled by the input stimulus, similar to "rate coding" in biology, and the distributions of times between events are log-normal, providing insights into the atomic-scale spiking mechanism. The stochasticity of the spiking behavior is then used for true random number generation, and the high quality of the generated random bit-streams is demonstrated, opening up promising routes toward integration of neuromorphic computing with secure information processing.

Peculiar Atomic Bond Nature in Platinum Monatomic Chains

Metal atomic chains have been reported to change their electronic or magnetic properties by slight mechanical stimulus. However, the mechanical response has been veiled because of lack of information on the bond nature. Here, we clarify the bond nature in platinum (Pt) monatomic chains by our in situ transmission electron microscope method. The stiffness is measured with sub-N/m precision by quartz length-extension resonator. The bond stiffnesses at the middle of the chain and at the connection to the base are estimated to be 25 and 23 N/m, respectively, which are higher than the bulk counterpart. Interestingly, the bond length of 0.25 nm is found to be elastically stretched to 0.31 nm, corresponding to a 24% strain. Such peculiar bond nature could be explained by a novel concept of "string tension". This study is a milestone that will significantly change the way we think about atomic bonds in one-dimension.

Molecular Chains: Arranging and Programming Logic Gates

One particularly fascinating vision for charge-operated devices is the controlled assembly of structures from single surface-deposited molecules. Here, we report on the assembly of linear clusters that consist of phthalocyanine (H₂Pc) molecules on a Ag(111) surface. The molecules are imaged as well as manipulated with a low-temperature scanning tunneling microscope (STM). Upon deprotonation of every second H₂Pc, the resulting HPc molecule exhibits an isomeric bistability which can be used as inputs in logic gates. Combining our STM measurements with density functional theory calculations we show that the HPc isomers exhibit a repulsive electrostatic interaction with adjacent H₂Pc molecules which, due to the asymmetric charge distribution on HPc, results in a counterclockwise or clockwise molecule tilt of the latter, thereby defining the logic 0 and 1 of the output. It is shown that information can be relayed along molecule chains over distances equivalent to at least nine molecules.

A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

Electrochemically active metals offer advanced functionalities with respect to the well-established gold electrode arrangements in various electronic transport experiments on atomic scale objects. Such functionalities can arise from stronger interactions with the leads which provide better coupling to specific molecules and may also facilitate metallic filament formation in atomic switches. However, the higher reactivity of the electrode metal also imposes challenges in the fabrication and reliability of nanometer scale platforms, limiting the number of reported applications. Here we present a high-yield lithographic fabrication procedure suitable to extend the experimental toolkit with mechanically controllable break junctions of oxygen sensitive metallic electrodes. We fabricate and characterize silver break junctions exhibiting single-atomic conductance and superior mechanical and electrical stability at room temperature. As a proof-of-principle application, we demonstrate resistive switching between metastable few-atom configurations at finite voltage bias.

Voltage-Induced Rearrangements in Atomic-Size Contacts

We study voltage-induced conductance changes of Pb, Au, Al, and Cu atomic contacts. The experiments are performed in vacuum at low temperature using mechanically controllable break junctions. We determine switching histograms, i.e., distribution functions of switching voltages and switching currents, as a function of the conductance. We observe a clear material dependence: Au reveals the highest and almost conductance-independent switching voltage, while Al has the lowest with a pronounced dependence on the conductance. The theoretical study uses density functional theory and a generalized Langevin equation considering the pumping of particular phonon modes. We identify a runaway voltage as the threshold at which the pumping destabilizes the atomic arrangement. We find qualitative agreement between the average switching voltage and the runaway voltage regarding the material and conductance dependence and contact-to-contact variation of the average characteristic voltages, suggesting that the phonon pumping is a relevant mechanism driving the rearrangements in the experimental contacts.

Cold welding assisted self-healing of fractured ultrathin Au nanowires

In nano-electronic field, cold welding is a simple novel method to join ultrathin noble metal nanowires (NWs) without introducing extra energy and defects. In previous works, it always occurred between ultrathin noble metal NWs, tensile fracture parts of a single NW, or a NW formation from nanoparticles. However, some external force is still needed to drive the materials as close to each other as possible before the process. Here, we proposed a new method to achieve cold welding without introducing artificial loadings. The bending fractured ultrathin gold (Au) NW can be self-healed assisted by cold welding during the removal of the tungsten (W) tip by in situ transmission electron microscope (TEM). A new interface with lattice mismatch formed in the welding zone after multiple periodic cycles, leaving an angle between the two rebonded fracture parts. Furthermore, the cold welding assisted self-healing of the bending fractured ultrathin Au NW and atom evolutions were also confirmed by molecular dynamics (MD) simulations. The successful implementation of cold welding makes the self-healing come true when the ultrathin Au NW fractures under the unexpected vibrations.

Key factors affecting Rayleigh instability of ultrathin 4H hexagonal gold nanoribbons

Rayleigh instability was originally used to describe the phenomenon of a cylindrical fluid jet that transforms into a chain of droplets. Very recently, it has been extended to metallic nanostructures like gold (Au) and silver (Ag) nanowires (NWs), as well as mixed alloy NWs by some thermodynamic processes. To date, the key factors affecting the Rayleigh instability have not been well studied. To clarify this, we systematically investigate the features of Rayleigh instability in ultrathin 4H hexagonal Au nanoribbons (NRBs) under electron beam (E-beam) irradiation. We prove that by decreasing the initial widths of 4H Au NRBs and the E-beam current density, as well as the irradiation time and intensity per unit area, the Rayleigh instability can be effectively restrained. Our work thus sheds light on how to effectively reduce or even eliminate the Rayleigh instability of one dimensional nanomaterials.

Atomic scale mechanics explored by in situ transmission electron microscopy with a quartz length-extension resonator as a force sensor

An in situ transmission electron microscopy (TEM) holder equipped with a quartz length-extension resonator (LER) as a force sensor was developed to examine the elastic properties of atomic-scale materials. This holder is a useful means of studying the effects of size and crystal orientation on the properties of nanomaterials via measurements of mechanical responses while simultaneously observing atomic structures. The spring constants of nanocontacts (NCs) were determined based on shifts in the resonance frequency of the LER during TEM observations. The LER spring constant and sensitivity (the ratio of the LER induced charge to its oscillation amplitude), both of which are crucial to mechanical evaluation of NCs, were precisely calibrated from an analysis of TEM images along with the output of the electronics attached to the holder. The mechanical stability of the newly developed TEM holder was sufficient to allow chains of Pt atoms in the NC to be maintained for at least several seconds. The minimum measurable NC spring constant was on the order of 1 N m^-1, comparable to that associated with a single atomic bond. The spring constant of a NC composed of a single-bonded chain of two Pt atoms was found to be 13.2 N m^-1. This holder therefore has significant potential with regard to the characterization of nanoscale mechanical properties.

Breaking the Quantum PIN Code of Atomic Synapses

Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross section on the device conductance, a nanometer-scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. However, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby, the quantum PIN code, i.e., the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions, is revealed. Our measurements on Nb₂O₅ resistive switching junctions provide profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.

Molecular dynamics simulation of the formation of Cu-Pt nanocontacts in the mechanically controlled break junction experiments

The formation of the Cu-Pt nanocontacts has been investigated by means of classical molecular dynamics simulations. The simulations of the mechanically controlled break junction experiment have been performed in wide ranges of temperatures (0-300 K) and at relative Pt concentrations (0-20%). The structure of the breaking area has been studied 2 ns before the final breaking of the nanocontacts. The length of the breaking area increases with the increase of the temperature and decreases with the increase of the relative Pt concentration. The structure of the breaking area has been investigated by means of the radial distribution function method. The breaking area usually has one of the following structures: (i) a bulk-like structure, (ii) a structure consisting of centered icosahedrons rotated 90°, or (iii) an icosahedral structure composed of pentagonal rings. The structure of the breaking area is almost independent of the temperature and the stretching direction due to the strong Cu-Pt interaction.

Fabrication of atomic junctions with experimental parameters optimized using ground-state searches of Ising spin computing

Feedback-controlled electromigration (FCE) is employed to control metal nanowires with quantized conductance and create nanogaps and atomic junctions. In the FCE method, the experimental parameters are commonly selected based on experience. However, optimization of the parameters by way of tuning is intractable because of the impossibility of attempting all different combinations systematically. Therefore, we propose the use of the Ising spin model to optimize the FCE parameters, because this approach can search for a global optimum in a multidimensional solution space within a short calculation time. The FCE parameters were determined by using the energy convergence properties of the Ising spin model. We tested these parameters in actual FCE experiments, and we demonstrated that the Ising spin model could improve the controllability of the quantized conductance in atomic junctions. This result implies that the proposed method is an effective tool for the optimization of the FCE process in which an intelligent machine can conduct the research instead of humans.

Atomic switches of metallic point contacts by plasmonic heating

Electronic switches with nanoscale dimensions satisfy an urgent demand for further device miniaturization. A recent heavily investigated approach for nanoswitches is the use of molecular junctions that employ photochromic molecules that toggle between two distinct isoforms. In contrast to the reports on this approach, we demonstrate that the conductance switch behavior can be realized with only a bare metallic contact without any molecules under light illumination. We demonstrate that the conductance of bare metallic quantum contacts can be reversibly switched over eight orders of magnitude, which substantially exceeds the performance of molecular switches. After the switch process, the gap size between two electrodes can be precisely adjusted with subangstrom accuracy by controlling the light intensity or polarization. Supported by simulations, we reveal a more general and straightforward mechanism for nanoswitching behavior, i.e., atomic switches can be realized by the expansion of nanoelectrodes due to plasmonic heating.

Molecular Orbital Gating Surface-Enhanced Raman Scattering

One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional ∼40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.

Admittance of Atomic and Molecular Junctions and Their Signal Transmission

Atom-sized contacts of metals are usually characterized by their direct current (DC) conductance. However, when atom-sized contacts are used as device interconnects and transmit high frequency signals or fast pulses, the most critical parameter is not their DC conductance but their admittance Y(ω), in particular its imaginary part ImY(ω). In this article, I will present a brief survey of theoretical and experimental results on the magnitude of Y(ω) for atom-sized contacts of metals. Theoretical contact models are first described and followed by numerical evaluation of ImY(ω) based on these models. As for experiments on Y(ω), previous experiments conducted under time-varying biases are surveyed, and then the results of direct signal transmission through atom-sized contacts are discussed. Both theoretical and experimental results indicate that ImY(ω) is negligibly small for typical atom-sized contacts for signal frequencies up to 1 GHz.

Shaping the Atomic-Scale Geometries of Electrodes to Control Optical and Electrical Performance of Molecular Devices

A straightforward method to generate both atomic-scale sharp and atomic-scale planar electrodes is reported. The atomic-scale sharp electrodes are generated by precisely stretching a suspended nanowire, while the atomic-scale planar electrodes are obtained via mechanically controllable interelectrodes compression followed by a thermal-driven atom migration process. Notably, the gap size between the electrodes can be precisely controlled at subangstrom accuracy with this method. These two types of electrodes are subsequently employed to investigate the properties of single molecular junctions. It is found, for the first time, that the conductance of the amine-linked molecular junctions can be enhanced ≈50% as the atomic-scale sharp electrodes are used. However, the atomic-scale planar electrodes show great advantages to enhance the sensitivity of Raman scattering upon the variation of nanogap size. The underlying mechanisms for these two interesting observations are clarified with the help of density functional theory calculation and finite-element method simulation. These findings not only provide a strategy to control the electron transport through the molecule junction, but also pave a way to modulate the optical response as well as to improve the stability of single molecular devices via the rational design of electrodes geometries.

Superconducting properties of lithographic lead break junctions

We have fabricated mechanically controlled break junction samples made of lead (Pb) by means of state-of-the-art nanofabrication methods: electron beam lithography and physical vapour deposition. The electrical and magnetic properties were characterized in a [Formula: see text] cryostat and showed a hard superconducting gap. Temperature and magnetic field dependence of tunnel contacts were compared and quantitatively described by including either thermal broadening of the density of states or pair breaking in the framework of a Skalski model, respectively. We show point contact spectra of few-atom contacts and present tunneling spectra exhibiting a superconducting double-gap structure.

Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact

Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

Two-probe STM experiments at the atomic level

Direct characterization of planar atomic or molecular scale devices and circuits on a supporting surface by multi-probe measurements requires unprecedented stability of single atom contacts and manipulation of scanning probes over large, nanometer scale area with atomic precision. In this work, we describe the full methodology behind atomically defined two-probe scanning tunneling microscopy (STM) experiments performed on a model system: dangling bond dimer wire supported on a hydrogenated germanium (0 0 1) surface. We show that 70 nm long atomic wire can be simultaneously approached by two independent STM scanners with exact probe to probe distance reaching down to 30 nm. This allows direct wire characterization by two-probe I-V characteristics at distances below 50 nm. Our technical results presented in this work open a new area for multi-probe research, which can be now performed with precision so far accessible only by single-probe scanning probe microscopy (SPM) experiments.

Conformation-based signal transfer and processing at the single-molecule level

Building electronic components made of individual molecules is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of molecular devices and circuits for signal transmission and processing at room temperature has proven challenging. Here, we present room-temperature intermolecular signal transfer and processing using SnCl₂Pc molecules on a Cu(100) surface. The in-plane orientations of the molecules are effectively coupled via intermolecular interaction and serve as the information carrier. In the coupled molecular arrays, the signal can be transferred from one molecule to another in the in-plane direction along predesigned routes and processed to realize logical operations. These phenomena enable the use of molecules displaying intrinsic bistable states as complex molecular devices and circuits with novel functions.

Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

Plasmon-induced nanoscale quantised conductance filaments

Plasmon-induced phenomena have recently attracted considerable attention. At the same time, relatively little research has been conducted on electrochemistry mediated by plasmon excitations. Here we report plasmon-induced formation of nanoscale quantized conductance filaments within metal-insulator-metal heterostructures. Plasmon-enhanced electromagnetic fields in an array of gold nanodots provide a straightforward means of forming conductive CrOx bridges across a thin native chromium oxide barrier between the nanodots and an underlying metallic Cr layer. The existence of these nanoscale conducting filaments is verified by transmission electron microscopy and contact resistance measurements. Their conductance was interrogated optically, revealing quantised relative transmission of light through the heterostructures across a wavelength range of 1-12 μm. Such plasmon-induced electrochemical processes open up new possibilities for the development of scalable devices governed by light.

Stochastic resonance in bistable atomic switches

We have investigated the conductance of bistable gold atomic switches as a function of periodic input voltages mixed with a random noise. With increasing noise amplitude, the atomic switches biased below the threshold voltage for conductance switching start exhibiting switching in conductance between two stable states. Clear synchronization between the input and output signals is observed when an optimized noise amplitude is mixed with the periodic input voltage, even when the atomic switches are driven by an input voltage as low as approximately 10% of the threshold voltage. The observed behavior can be explained in terms of the stochastic resonance. The results presented here indicate that utilization of noise can dramatically reduce the operation voltage of metal atomic switches.

Structure and local charging of electromigrated Au nanocontacts

We study the structure and the electronic properties of Au nanocontacts created by controlled electromigration of thin film devices, a method frequently used to contact molecules. In contrast to electromigration testing, a current is applied in a cyclic fashion and during each cycle the resistance increase of the metal upon heating is used to avoid thermal runaway. In this way, nanometer sized-gaps are obtained. The thin film devices with an optimized structure at the origin of the electromigration process are made by shadow evaporation without contamination by organic materials. Defining rounded edges and a thinner area in the center of the device allow to pre-determine the location where the electromigration takes place. Scanning force microscopy images of the pristine Au film and electromigrated contact show its grainy structure. Through electromigration, a 1.5 μm-wide slit is formed, with extensions only on the anode side that had previously not been observed in narrower structures. It is discussed whether this could be explained by asymmetric heating of both electrodes. New grains are formed in the slit and on the extensions on both, the anode and the cathode side. The smaller structures inside the slit lead to an electrode distance below 150 nm. Kelvin probe force microscopy images show a local work function difference with fluctuations of 70 mV on the metal before electromigration. Between the electrodes, disconnected through electromigration, a work function difference of 3.2 V is observed due to charging. Some of the grains newly formed by electromigration are electrically disconnected from the electrodes.

A kilobyte rewritable atomic memory

The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.

Single-Atom Switches and Single-Atom Gaps Using Stretched Metal Nanowires

Utilizing individual atoms or molecules as functional units in electronic circuits meets the increasing technical demands for the miniaturization of traditional semiconductor devices. To be of technological interest, these functional devices should be high-yield, consume low amounts of energy, and operate at room temperature. In this study, we developed nanodevices called quantized conductance atomic switches (QCAS) that satisfy these requirements. The QCAS operates by applying a feedback-controlled voltage to a nanoconstriction within a stretched nanowire. We demonstrated that individual metal atoms could be removed from the nanoconstriction and that the removed metal atoms could be refilled into the nanoconstriction, thus yielding a reversible quantized conductance switch. We determined the key parameters for the QCAS between the "on" and "off" states at room temperature under a small operating voltage. By controlling the applied bias voltage, the atoms can be further completely removed from the constriction to break the nanowire, generating single-atom nanogaps. These atomic nanogaps are quite stable under a sweeping voltage and can be readjusted with subangstrom accuracy, thus fulfilling the requirement of both reliability and flexibility for the high-yield fabrication of molecular devices.

An atomic symmetry-controlled thermal switch

We propose a simple diatomic system trapped inside an optical cavity to control the energy flow between two thermal baths. Through the action of the baths the system is driven to a non-equilibrium steady state. Using the Large Deviation theory we show that the number of photons flowing between the two baths is dramatically different depending on the symmetry of the atomic states. Here we present a deterministic scheme to prepare symmetric and antisymmetric atomic states with the use of external driving fields, thus implementing an atomic control switch for the energy flow.

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

Evaluation of the energy barrier for failure of Au atomic contact based on temperature dependent current–voltage characteristics

Evaluation of the energy barrier for failure of Au atomic contact based on the current–voltage characteristics as a function of sample temperature.

Controlled switching of single-molecule junctions by mechanical motion of a phenyl ring

Mechanical methods for single-molecule control have potential for wide application in nanodevices and machines. Here we demonstrate the operation of a single-molecule switch made functional by the motion of a phenyl ring, analogous to the lever in a conventional toggle switch. The switch can be actuated by dual triggers, either by a voltage pulse or by displacement of the electrode, and electronic manipulation of the ring by chemical substitution enables rational control of the on-state conductance. Owing to its simple mechanics, structural robustness, and chemical accessibility, we propose that phenyl rings are promising components in mechanical molecular devices.

Tuning an Atomic Switch on a Surface with Electric and Magnetic Fields

Controllable switching an adatom position and its magnetization could lead to a single-atom memory. Our theoretical studies show that switching adatom between different surface sites by the quantum tunneling, discovered in several experiments, can be controlled by an external electric field. Switching a single spin by magnetic fields is found to be strongly site-dependent on a surface. This could enable to control a spin-dynamics of adatom.

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

Current-induced forces and hot spots in biased nanojunctions

We investigate theoretically the interplay of current-induced forces (CIFs), Joule heating, and heat transport inside a current-carrying nanoconductor. We find that the CIFs, due to the electron-phonon coherence, can control the spatial heat dissipation in the conductor. This yields a significant asymmetric concentration of excess heating (hot spot) even for a symmetric conductor. When coupled to the electrode phonons, CIFs drive different phonon heat flux into the two electrodes. First-principles calculations on realistic biased nanojunctions illustrate the importance of the effect.

Quantum thermopower of metallic atomic-size contacts at room temperature

We report conductance and thermopower measurements of metallic atomic-size contacts, namely gold and platinum, using a scanning tunneling microscope (STM) at room temperature. We find that few-atom gold contacts have an average negative thermopower, whereas platinum contacts present a positive thermopower, showing that for both metals, the sign of the thermopower in the nanoscale differs from that of bulk wires. We also find that the magnitude of the thermopower exhibits minima at the maxima of the conductance histogram in the case of gold nanocontacts while for platinum it presents large fluctuations. Tight-binding calculations and Green's function techniques, together with molecular dynamics simulations, show that these observations can be understood in the context of the Landauer-Büttiker picture of coherent transport in atomic-scale wires. In particular, we show that the differences in the thermopower between these two metals are due to the fact that the elastic transport is dominated by the 6s orbitals in the case of gold and by the 5d orbitals in the case of platinum.

Evidence for non-conservative current-induced forces in the breaking of Au and Pt atomic chains

This experimental work aims at probing current-induced forces at the atomic scale. Specifically it addresses predictions in recent work regarding the appearance of run-away modes as a result of a combined effect of the non-conservative wind force and a 'Berry force'. The systems we consider here are atomic chains of Au and Pt atoms, for which we investigate the distribution of break down voltage values. We observe two distinct modes of breaking for Au atomic chains. The breaking at high voltage appears to behave as expected for regular break down by thermal excitation due to Joule heating. However, there is a low-voltage breaking mode that has characteristics expected for the mechanism of current-induced forces. Although a full comparison would require more detailed information on the individual atomic configurations, the systems we consider are very similar to those considered in recent model calculations and the comparison between experiment and theory is very encouraging for the interpretation we propose.

Magnetotransport in atomic-size bismuth contacts

We report low-temperature transport experiments on atomic-size contacts of bismuth that are fabricated using the mechanically controlled break-junction technique at low temperatures. We observe stable contacts with conductance values at fractions of one conductance quantum G0 = 2e(2)/h, as is expected for systems with long Fermi wavelength. We defer two preferred conductance scales: the lower one is in the order of 0.015 G0 and can be attributed to single-atom Bi contact, while the higher one amounts to 0.15 G0, as indicated by the appearance of multiples of this value in the conductance histogram. Rich magneto-transport behaviour with significant changes in the magneto-conductance is found in the whole conductance range. Although for the pristine samples and large contacts with G > 5 G0, indications for Shubnikov-de Haas oscillations are present, the smallest contacts show pronounced conductance fluctuations that decay rapidly when a magnetic field is applied. Moreover, large variations are observed when a finite bias voltage is applied. These findings are interpreted as the transition from the diffusive to the ballistic and the ultra-quantum regime when lowering the contact size.

Shot noise variation within ensembles of gold atomic break junctions at room temperature

Atomic-scale junctions are a powerful tool to study quantum transport, and are frequently examined through the mechanically controllable break junction technique. The junction-to-junction variation of atomic configurations often leads to a statistical approach, with ensemble-averaged properties providing access to the relevant physics. However, the full ensemble contains considerable additional information. We report a new analysis of shot noise over entire ensembles of junction configurations using scanning tunneling microscope-style gold break junctions at room temperature in ambient conditions, and compare these data with simulations based on molecular dynamics, a sophisticated tight-binding model, and nonequilibrium Green's functions. The experimental data show a suppression in the variation of the noise near conductances dominated by fully transmitting channels, and a surprising participation of multiple channels in the nominal tunneling regime. Comparison with the simulations, which agree well with published work at low temperatures and ultrahigh vacuum conditions, suggests that these effects likely result from surface contamination and disorder in the electrodes. We propose additional experiments that can distinguish the relative contributions of these factors.