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Shani L, Chaaban J, Nilson A, Clerc E, Menning G, Riggert C, Lueb P, Rossi M, Badawy G, Bakkers EPAM, Pribiag VS. Thermal scanning probe and laser lithography for patterning nanowire based quantum devices. NANOTECHNOLOGY 2024; 35:255302. [PMID: 38467064 DOI: 10.1088/1361-6528/ad3257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 03/10/2024] [Indexed: 03/13/2024]
Abstract
Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin-orbit coupling andg-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.
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Affiliation(s)
- Lior Shani
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Jana Chaaban
- Heidelberg Instruments Nano AG, Zurich, Switzerland
| | - Alec Nilson
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Eliott Clerc
- Heidelberg Instruments Nano AG, Zurich, Switzerland
| | - Gavin Menning
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Colin Riggert
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Pim Lueb
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Marco Rossi
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Vlad S Pribiag
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
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2
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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3
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Zhang J, Liu L, Zheng C, Li W, Wang C, Wang T. Embedded nano spin sensor for in situ probing of gas adsorption inside porous organic frameworks. Nat Commun 2023; 14:4922. [PMID: 37582960 PMCID: PMC10427628 DOI: 10.1038/s41467-023-40683-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 08/01/2023] [Indexed: 08/17/2023] Open
Abstract
Spin-based sensors have attracted considerable attention owing to their high sensitivities. Herein, we developed a metallofullerene-based nano spin sensor to probe gas adsorption within porous organic frameworks. For this, spin-active metallofullerene, Sc3C2@C80, was selected and embedded into a nanopore of a pyrene-based covalent organic framework (Py-COF). Electron paramagnetic resonance (EPR) spectroscopy recorded the EPR signals of Sc3C2@C80 within Py-COF after adsorbing N2, CO, CH4, CO2, C3H6, and C3H8. Results indicated that the regularly changing EPR signals of embedded Sc3C2@C80 were associated with the gas adsorption performance of Py-COF. In contrast to traditional adsorption isotherm measurements, this implantable nano spin sensor could probe gas adsorption and desorption with in situ, real-time monitoring. The proposed nano spin sensor was also employed to probe the gas adsorption performance of a metal-organic framework (MOF-177), demonstrating its versatility. The nano spin sensor is thus applicable for quantum sensing and precision measurements.
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Affiliation(s)
- Jie Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Linshan Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China
| | - Chaofeng Zheng
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wang Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China
| | - Chunru Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China
| | - Taishan Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Beijing, 100190, China.
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4
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Lozano MS, Gómez VJ. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires. NANOSCALE ADVANCES 2023; 5:1890-1909. [PMID: 36998660 PMCID: PMC10044505 DOI: 10.1039/d2na00956k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
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5
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Malkoc O, Stano P, Loss D. Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits. PHYSICAL REVIEW LETTERS 2022; 129:247701. [PMID: 36563265 DOI: 10.1103/physrevlett.129.247701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 09/27/2022] [Accepted: 11/09/2022] [Indexed: 06/17/2023]
Abstract
We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.
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Affiliation(s)
- Ognjen Malkoc
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
| | - Peter Stano
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
- Institute of Physics, Slovak Academy of Sciences, 845 11 Bratislava, Slovakia
| | - Daniel Loss
- RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan
- RIKEN Center for Quantum Computing, Wako, Saitama 351-0198, Japan
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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6
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The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots. Sci Rep 2022; 12:10444. [PMID: 35729358 PMCID: PMC9213468 DOI: 10.1038/s41598-022-14669-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 06/10/2022] [Indexed: 11/08/2022] Open
Abstract
We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the quantum dot can be modulated. In addition, when quantum dots in different channels are capacitively coupled, the reservoir offset voltage of one of the QDs can work as a gate voltage for the others. Our results show that the technique will lead to reduction of the number of gate electrodes, which is advantageous for future qubit integration.
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7
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Zhang L, Chen Y, Pan D, Huang S, Zhao J, Xu HQ. Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices. NANOTECHNOLOGY 2022; 33:325303. [PMID: 35504264 DOI: 10.1088/1361-6528/ac6c34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Accepted: 04/29/2022] [Indexed: 06/14/2023]
Abstract
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ∼7300 cm2V-1s-1and a low gate hysteresis of ∼0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1 × 104cm2V-1s-1at a sheet electron density of ∼6.1 × 1011cm-2and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations.
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Affiliation(s)
- Li Zhang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanjie Chen
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
| | - Shaoyun Huang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
| | - H Q Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
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8
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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9
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Li Y, Shao ZC, Zhang C, Yu SH. Catalyzed Growth for Atomic-Precision Colloidal Chalcogenide Nanowires and Heterostructures: Progress and Perspective. J Phys Chem Lett 2021; 12:10695-10705. [PMID: 34709833 DOI: 10.1021/acs.jpclett.1c02358] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
One-dimensional colloidal semiconductor nanowires are of wide interest in nanoscale electronics and photonics. As compared to the zero-dimensional counterparts, their geometrical anisotropy offers an additional degree of freedom to tailor the electronic and optical properties and enables customized heterostructures with increased complexity. The colloidal synthetic chemistry developed over past decades has fueled the emergence of diverse one-dimensional nanocrystals and heterostructures, whereas the synthetic pursuit for compositionally and structurally defining them at the atomic-level precision remains yet a giant challenge. Catalyzed growth, wherein nanowires grow at the catalyst-nanowire interfaces in a layer-by-layer manner, offers a promising path toward such an ultimate goal. In this Perspective, we will take a close look at how catalyzed growth would enable the on-demand, atomic-precision control of colloidal nanowires and their heterostructures. We then further highlight their potentials for constructing higher-order heteroarchitectures with new and/or enhanced performances. Finally, we conclude with a forward-looking perspective on future challenges.
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Affiliation(s)
- Yi Li
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhen-Chao Shao
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chong Zhang
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shu-Hong Yu
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
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10
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4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot. Sci Rep 2021; 11:20039. [PMID: 34625617 PMCID: PMC8501031 DOI: 10.1038/s41598-021-99560-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Accepted: 09/27/2021] [Indexed: 11/30/2022] Open
Abstract
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
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11
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Hendrickx NW, Lawrie WIL, Petit L, Sammak A, Scappucci G, Veldhorst M. A single-hole spin qubit. Nat Commun 2020; 11:3478. [PMID: 32651363 PMCID: PMC7351715 DOI: 10.1038/s41467-020-17211-7] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Accepted: 06/16/2020] [Indexed: 11/09/2022] Open
Abstract
Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their compatibility with standard semiconductor manufacturing. While early research focused on the simpler electron system, recent demonstrations using multi-hole quantum dots illustrated the favourable properties holes can offer for fast and scalable quantum control. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing. To demonstrate the integration of single-shot readout and qubit operation, we show Rabi driving on both qubits. We find remarkable electric control over the qubit resonance frequencies, providing great qubit addressability. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole quantum dot qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of quantum hardware. While most results so far in semiconductor spin-based quantum computation use electron spins, devices based on hole spins may have more favourable properties for quantum applications. Here, the authors demonstrate single-shot readout and coherent control of a qubit made from a single hole spin.
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Affiliation(s)
- N W Hendrickx
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands.
| | - W I L Lawrie
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands
| | - L Petit
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands
| | - A Sammak
- QuTech and Netherlands Organisation for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CK, Delft, The Netherlands
| | - G Scappucci
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands
| | - M Veldhorst
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands.
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12
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Yang Z, Heischmidt B, Gazibegovic S, Badawy G, Car D, Crowell PA, Bakkers EPAM, Pribiag VS. Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices. NANO LETTERS 2020; 20:3232-3239. [PMID: 32338518 DOI: 10.1021/acs.nanolett.9b05331] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Signatures of Majorana zero modes (MZMs) have been observed in semiconductor nanowires (NWs) with a strong spin-orbital interaction (SOI) with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this platform requires eliminating spin degeneracy by applying a magnetic field. However, the field can adversely impact the induced superconductivity and places geometric restrictions on the device. These challenges could be circumvented by integrating magnetic elements with the NWs. Here, we report the first experimental investigation of spin transport across InSb NWs with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and reveals a regime where the device acts as a spin filter. These results open an avenue toward developing MZM devices with spin degeneracy lifted locally without external fields. They could also enable spin-based devices that leverage spin-orbital states in quantum wires.
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Affiliation(s)
- Zedong Yang
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Brett Heischmidt
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Sasa Gazibegovic
- Eindhoven University of Technology, Eindhoven, North Brabant 5600, The Netherlands
| | - Ghada Badawy
- Eindhoven University of Technology, Eindhoven, North Brabant 5600, The Netherlands
| | - Diana Car
- Eindhoven University of Technology, Eindhoven, North Brabant 5600, The Netherlands
| | - Paul A Crowell
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Erik P A M Bakkers
- Eindhoven University of Technology, Eindhoven, North Brabant 5600, The Netherlands
| | - Vlad S Pribiag
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
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13
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Dalelkhan B, Göransson DJO, Thelander C, Li K, Xing YJ, Maisi VF, Xu HQ. Ambipolar transport in narrow bandgap semiconductor InSb nanowires. NANOSCALE 2020; 12:8159-8165. [PMID: 32239037 DOI: 10.1039/d0nr00775g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report on a transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the Fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by the resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1 μm-long device made from a nanowire of 50 nm in diameter, we extracted a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260 nm-long device is found to exhibit a finite off-state current and a circumference-normalized on-state hole current of 11 μA μm-1 at VD = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.
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Affiliation(s)
- B Dalelkhan
- NanoLund and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden.
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14
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Wang R, Deacon RS, Sun J, Yao J, Lieber CM, Ishibashi K. Gate Tunable Hole Charge Qubit Formed in a Ge/Si Nanowire Double Quantum Dot Coupled to Microwave Photons. NANO LETTERS 2019; 19:1052-1060. [PMID: 30636426 DOI: 10.1021/acs.nanolett.8b04343] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A controllable and coherent light-matter interface is an essential element for a scalable quantum information processor. Strong coupling to an on-chip cavity has been accomplished in various electron quantum dot systems, but rarely explored in the hole systems. Here we demonstrate a hybrid architecture comprising a microwave transmission line resonator controllably coupled to a hole charge qubit formed in a Ge/Si core/shell nanowire (NW), which is a natural one-dimensional hole gas with a strong spin-orbit interaction (SOI) and lack of nuclear spin scattering, potentially enabling fast spin manipulation by electric manners and long coherence times. The charge qubit is established in a double quantum dot defined by local electrical gates. Qubit transition energy can be independently tuned by the electrochemical potential difference and the tunnel coupling between the adjacent dots, opening transverse (σ x) and longitudinal (σ z) degrees of freedom for qubit operation and interaction. As the qubit energy is swept across the photon level, the coupling with resonator is thus switched on and off, as detected by resonator transmission spectroscopy. The observed resonance dynamics is replicated by a complete quantum numerical simulation considering an efficient charge dipole-photon coupling with a strength up to 2π × 55 MHz, yielding an estimation of the spin-resonator coupling rate through SOI to be about 10 MHz. The results inspire the future researches on the coherent hole-photon interaction in Ge/Si nanowires.
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Affiliation(s)
- Rui Wang
- Advanced Device Laboratory , RIKEN , Wako , Saitama 351-0198 , Japan
- Department of Physics , Tokyo University of Science , Kagurazaka, Tokyo 162-8601 , Japan
| | - Russell S Deacon
- Advanced Device Laboratory , RIKEN , Wako , Saitama 351-0198 , Japan
- Center for Emergent Matter Science (CEMS) , RIKEN , Wako , Saitama 351-0198 , Japan
| | - Jian Sun
- Advanced Device Laboratory , RIKEN , Wako , Saitama 351-0198 , Japan
- Hunan Key Laboratory of Super Micro-Structure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , China
| | - Jun Yao
- Department of Electrical and Computer Engineering, Institute for Applied Life Sciences , University of Massachusetts , Amherst , Massachusetts 01003 , United States
| | - Charles M Lieber
- Deparment of Chemistry and Chemical Biology , Harvard University , Cambridge , Massachusetts 02138 , United States
- School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States
| | - Koji Ishibashi
- Advanced Device Laboratory , RIKEN , Wako , Saitama 351-0198 , Japan
- Center for Emergent Matter Science (CEMS) , RIKEN , Wako , Saitama 351-0198 , Japan
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15
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Kang N, Fan D, Zhi J, Pan D, Li S, Wang C, Guo J, Zhao J, Xu H. Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets. NANO LETTERS 2019; 19:561-569. [PMID: 30561213 DOI: 10.1021/acs.nanolett.8b04556] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin-orbit coupling in the InSb nanosheet is verified by the low-field magnetotransport measurements, characterized by weak antilocalization effect. Finally, we demonstrate the realization of high-quality InSb nanosheet-superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin-orbit coupling.
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Affiliation(s)
- Ning Kang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Dingxun Fan
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jinhua Zhi
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors , Chinese Academy of Sciences , P.O. Box 912, Beijing 100083 , China
| | - Sen Li
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Cheng Wang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jingkun Guo
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors , Chinese Academy of Sciences , P.O. Box 912, Beijing 100083 , China
| | - Hongqi Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
- Division of Solid State Physics , Lund University , Box 118, S-22100 Lund , Sweden
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16
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Leandro L, Gunnarsson CP, Reznik R, Jöns KD, Shtrom I, Khrebtov A, Kasama T, Zwiller V, Cirlin G, Akopian N. Nanowire Quantum Dots Tuned to Atomic Resonances. NANO LETTERS 2018; 18:7217-7221. [PMID: 30336054 DOI: 10.1021/acs.nanolett.8b03363] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of powerful possibilities, such as precise positioning of the emitters, excellent photon extraction efficiency and direct electrical contacting of quantum dots. Notably, nanowire structures can be grown on silicon substrates, allowing for a straightforward integration with silicon-based photonic devices. In this work we show controlled growth of nanowire-quantum-dot structures on silicon, frequency tuned to atomic transitions. We grow GaAs quantum dots in AlGaAs nanowires with a nearly pure crystal structure and excellent optical properties. We precisely control the dimensions of quantum dots and their position inside nanowires and demonstrate that the emission wavelength can be engineered over the range of at least 30 nm around 765 nm. By applying an external magnetic field, we are able to fine-tune the emission frequency of our nanowire quantum dots to the D2 transition of 87Rb. We use the Rb transitions to precisely measure the actual spectral line width of the photons emitted from a nanowire quantum dot to be 9.4 ± 0.7 μeV, under nonresonant excitation. Our work brings highly desirable functionalities to quantum technologies, enabling, for instance, a realization of a quantum network, based on an arbitrary number of nanowire single-photon sources, all operating at the same frequency of an atomic transition.
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Affiliation(s)
- Lorenzo Leandro
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Christine P Gunnarsson
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Rodion Reznik
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Klaus D Jöns
- Department of Applied Physics , KTH Royal Institute of Technology , SE-100 44 Stockholm , Sweden
| | - Igor Shtrom
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
| | - Artem Khrebtov
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Takeshi Kasama
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Valery Zwiller
- Department of Applied Physics , KTH Royal Institute of Technology , SE-100 44 Stockholm , Sweden
- Kavli Institute of Nanoscience , TU Delft , 2628CJ Delft , Netherlands
| | - George Cirlin
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Nika Akopian
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
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17
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Sun J, Deacon RS, Wang R, Yao J, Lieber CM, Ishibashi K. Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire. NANO LETTERS 2018; 18:6144-6149. [PMID: 30226052 DOI: 10.1021/acs.nanolett.8b01799] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Helical states, a prerequisite for the engineering of Majorana zero modes in solid-state systems, have recently been reported in the conduction band of III-V nanowires (NWs) subject to strong Rashba spin-orbit interaction. We report the observation of re-entrant conductance features consistent with the presence of helical hole states in multiple conduction modes of a Ge/Si core/shell NW. The Ge/Si system has several potential advantages over electron systems such as longer spin coherence time due to weaker coupling to nuclear spins and the possibility of isotope-purified materials for nuclear spin-free devices. We derive the Landé g factor of 3.6 from magneto-transport measurements, comparable to theoretical predictions and significantly larger when compared with that in strongly confined quantum dots. The spin-orbit energy is evaluated as ∼2.1 meV, on par with values in III-V NWs, showing good agreement with previous theoretical predictions and weak antilocalization measurements.
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Affiliation(s)
- Jian Sun
- Advanced Device Laboratory , RIKEN , 2-1 Hirosawa , Wako, Saitama 351-0198 , Japan
- School of Physical Science and Electronics , Central South University , Changsha 410083 , China
| | - Russell S Deacon
- Advanced Device Laboratory , RIKEN , 2-1 Hirosawa , Wako, Saitama 351-0198 , Japan
- Center for Emergent Matter Science , RIKEN , Wako, Saitama 351-0198 , Japan
| | - Rui Wang
- Advanced Device Laboratory , RIKEN , 2-1 Hirosawa , Wako, Saitama 351-0198 , Japan
| | - Jun Yao
- Deparment of Chemistry and Chemical Biology , Harvard University , Cambridge , Massachusetts 02138 , United States
- Department of Electrical and Computer Engineering, Institute for Applied Life Sciences , University of Massachusetts , Amherst , Massachusetts 01003 , United States
| | - Charles M Lieber
- Deparment of Chemistry and Chemical Biology , Harvard University , Cambridge , Massachusetts 02138 , United States
- School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States
| | - Koji Ishibashi
- Advanced Device Laboratory , RIKEN , 2-1 Hirosawa , Wako, Saitama 351-0198 , Japan
- Center for Emergent Matter Science , RIKEN , Wako, Saitama 351-0198 , Japan
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18
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Marcellina E, Srinivasan A, Miserev DS, Croxall AF, Ritchie DA, Farrer I, Sushkov OP, Culcer D, Hamilton AR. Electrical Control of the Zeeman Spin Splitting in Two-Dimensional Hole Systems. PHYSICAL REVIEW LETTERS 2018; 121:077701. [PMID: 30169055 DOI: 10.1103/physrevlett.121.077701] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2018] [Indexed: 06/08/2023]
Abstract
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a gallium arsenide quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector k. We find a threefold enhancement of the in-plane g-factor g_{∥}(k). We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realizing Majorana systems in p-type superconductor systems.
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Affiliation(s)
- E Marcellina
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - A Srinivasan
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - D S Miserev
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - A F Croxall
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - D A Ritchie
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - I Farrer
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - O P Sushkov
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - A R Hamilton
- School of Physics, The University of New South Wales, Sydney 2052, Australia
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19
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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot. Nat Commun 2018; 9:3255. [PMID: 30108212 PMCID: PMC6092405 DOI: 10.1038/s41467-018-05700-9] [Citation(s) in RCA: 32] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2018] [Accepted: 07/18/2018] [Indexed: 11/28/2022] Open
Abstract
Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed understanding of the spin and orbital states. Here we show a planar silicon metal-oxide-semiconductor-based quantum dot device and demonstrate operation down to the last hole. Magneto-spectroscopy studies show magic number shell filling consistent with the Fock–Darwin states of a circular two-dimensional quantum dot, with the spin filling sequence of the first six holes consistent with Hund’s rule. Next, we use pulse-bias spectroscopy to determine that the orbital spectrum is heavily influenced by the strong hole–hole interactions. These results provide a path towards scalable silicon hole-spin qubits. For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.
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20
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Mizokuchi R, Maurand R, Vigneau F, Myronov M, De Franceschi S. Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium. NANO LETTERS 2018; 18:4861-4865. [PMID: 29995419 DOI: 10.1021/acs.nanolett.8b01457] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2 e2/ h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.
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Affiliation(s)
- R Mizokuchi
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - R Maurand
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - F Vigneau
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - M Myronov
- Department of Physics , University of Warwick , Coventry CV4 7AL , United Kingdom
| | - S De Franceschi
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
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21
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Rieger T, Zellekens P, Demarina N, Hassan AA, Hackemüller FJ, Lüth H, Pietsch U, Schäpers T, Grützmacher D, Lepsa MI. Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires. NANOSCALE 2017; 9:18392-18401. [PMID: 29147699 DOI: 10.1039/c7nr05201d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.
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Affiliation(s)
- Torsten Rieger
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
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22
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Kotekar-Patil D, Nguyen BM, Yoo J, Dayeh SA, Frolov SM. Quasiballistic quantum transport through Ge/Si core/shell nanowires. NANOTECHNOLOGY 2017; 28:385204. [PMID: 28703121 DOI: 10.1088/1361-6528/aa7f82] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1-3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.
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Affiliation(s)
- D Kotekar-Patil
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
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23
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Yang ZX, Liu L, Yip S, Li D, Shen L, Zhou Z, Han N, Hung TF, Pun EYB, Wu X, Song A, Ho JC. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. ACS NANO 2017; 11:4237-4246. [PMID: 28355076 DOI: 10.1021/acsnano.7b01217] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
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Affiliation(s)
- Zai-Xing Yang
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
| | - Lizhe Liu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - SenPo Yip
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Lifan Shen
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | | | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190, PR China
| | | | - Edwin Yue-Bun Pun
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
| | - Xinglong Wu
- Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China
| | - Aimin Song
- Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China
- School of Electrical and Electronic Engineering, University of Manchester , Manchester M13 9PL, U.K
| | - Johnny C Ho
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
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24
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Bogan A, Studenikin SA, Korkusinski M, Aers GC, Gaudreau L, Zawadzki P, Sachrajda AS, Tracy LA, Reno JL, Hargett TW. Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor. PHYSICAL REVIEW LETTERS 2017; 118:167701. [PMID: 28474907 DOI: 10.1103/physrevlett.118.167701] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2016] [Indexed: 06/07/2023]
Abstract
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.
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Affiliation(s)
- A Bogan
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - S A Studenikin
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - M Korkusinski
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - G C Aers
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - L Gaudreau
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - P Zawadzki
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - A S Sachrajda
- Emerging Technology Division, National Research Council, Ottawa, Canada K1A0R6
| | - L A Tracy
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - J L Reno
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - T W Hargett
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
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25
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Fan J, Chen Y, Chen G, Xiao L, Jia S, Nori F. Electric-field-induced interferometric resonance of a one-dimensional spin-orbit-coupled electron. Sci Rep 2016; 6:38851. [PMID: 27966598 PMCID: PMC5155278 DOI: 10.1038/srep38851] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2016] [Accepted: 11/15/2016] [Indexed: 11/10/2022] Open
Abstract
The efficient control of electron spins is of crucial importance for spintronics, quantum metrology, and quantum information processing. We theoretically formulate an electric mechanism to probe the electron spin dynamics, by focusing on a one-dimensional spin-orbit-coupled nanowire quantum dot. Owing to the existence of spin-orbit coupling and a pulsed electric field, different spin-orbit states are shown to interfere with each other, generating intriguing interference-resonant patterns. We also reveal that an in-plane magnetic field does not affect the interval of any neighboring resonant peaks, but contributes a weak shift of each peak, which is sensitive to the direction of the magnetic field. We find that this proposed external-field-controlled scheme should be regarded as a new type of quantum-dot-based interferometry. This interferometry has potential applications in precise measurements of relevant experimental parameters, such as the Rashba and Dresselhaus spin-orbit-coupling strengths, as well as the Landé factor.
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Affiliation(s)
- Jingtao Fan
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser spectroscopy, Shanxi University, Taiyuan 030006, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Yuansen Chen
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China.,State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opt-Electronics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Gang Chen
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser spectroscopy, Shanxi University, Taiyuan 030006, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Liantuan Xiao
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser spectroscopy, Shanxi University, Taiyuan 030006, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Suotang Jia
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser spectroscopy, Shanxi University, Taiyuan 030006, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Franco Nori
- CEMS, RIKEN, Saitama 351-0198, Japan.,Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
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26
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Wang DQ, Klochan O, Hung JT, Culcer D, Farrer I, Ritchie DA, Hamilton AR. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot. NANO LETTERS 2016; 16:7685-7689. [PMID: 27960447 DOI: 10.1021/acs.nanolett.6b03752] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here, we present electrical transport measurements on holes in a gate-defined double quantum dot in a GaAs/AlxGa1-xAs heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.
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Affiliation(s)
- Daisy Q Wang
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
| | - Oleh Klochan
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
| | - Jo-Tzu Hung
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
| | - Dimitrie Culcer
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
| | - Ian Farrer
- Cavendish Laboratory, J. J. Thomson Avenue , Cambridge CB3 0HE, United Kingdom
| | - David A Ritchie
- Cavendish Laboratory, J. J. Thomson Avenue , Cambridge CB3 0HE, United Kingdom
| | - Alex R Hamilton
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
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27
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Maurand R, Jehl X, Kotekar-Patil D, Corna A, Bohuslavskyi H, Laviéville R, Hutin L, Barraud S, Vinet M, Sanquer M, De Franceschi S. A CMOS silicon spin qubit. Nat Commun 2016; 7:13575. [PMID: 27882926 PMCID: PMC5123048 DOI: 10.1038/ncomms13575] [Citation(s) in RCA: 313] [Impact Index Per Article: 39.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2016] [Accepted: 10/14/2016] [Indexed: 12/11/2022] Open
Abstract
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
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Affiliation(s)
- R. Maurand
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - X. Jehl
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - D. Kotekar-Patil
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - A. Corna
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - H. Bohuslavskyi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - R. Laviéville
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - L. Hutin
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - S. Barraud
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Vinet
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Sanquer
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - S. De Franceschi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
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28
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Fang H, Hu W, Wang P, Guo N, Luo W, Zheng D, Gong F, Luo M, Tian H, Zhang X, Luo C, Wu X, Chen P, Liao L, Pan A, Chen X, Lu W. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire. NANO LETTERS 2016; 16:6416-6424. [PMID: 27598791 DOI: 10.1021/acs.nanolett.6b02860] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.
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Affiliation(s)
- Hehai Fang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Weida Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Peng Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Nan Guo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Wenjin Luo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Dingshan Zheng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Fan Gong
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Man Luo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Hongzheng Tian
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Xutao Zhang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Chen Luo
- Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China
| | - Xing Wu
- Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China
| | - Pingping Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronics, Hunan University , Changsha 410082, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
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29
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Salfi J, Mol JA, Culcer D, Rogge S. Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. PHYSICAL REVIEW LETTERS 2016; 116:246801. [PMID: 27367400 DOI: 10.1103/physrevlett.116.246801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2015] [Indexed: 06/06/2023]
Abstract
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.
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Affiliation(s)
- Joe Salfi
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jan A Mol
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Sven Rogge
- School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
- Centre for Quantum Computation and Communication Technology, The University of New South Wales, Sydney, New South Wales 2052, Australia
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30
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Salfi J, Tong M, Rogge S, Culcer D. Quantum computing with acceptor spins in silicon. NANOTECHNOLOGY 2016; 27:244001. [PMID: 27171901 DOI: 10.1088/0957-4484/27/24/244001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.
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Affiliation(s)
- Joe Salfi
- School of Physics, The University of New South Wales, Sydney 2052, Australia
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31
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de la Mata M, Leturcq R, Plissard SR, Rolland C, Magén C, Arbiol J, Caroff P. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System. NANO LETTERS 2016; 16:825-833. [PMID: 26733426 DOI: 10.1021/acs.nanolett.5b05125] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
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Affiliation(s)
- María de la Mata
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Renaud Leturcq
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
- Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) , 5, avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg
| | - Sébastien R Plissard
- CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse, France
| | - Chloé Rolland
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
| | - César Magén
- Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain
| | - Philippe Caroff
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia
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32
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Voisin B, Maurand R, Barraud S, Vinet M, Jehl X, Sanquer M, Renard J, De Franceschi S. Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET. NANO LETTERS 2016; 16:88-92. [PMID: 26599868 DOI: 10.1021/acs.nanolett.5b02920] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.
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Affiliation(s)
- B Voisin
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
| | - R Maurand
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
| | - S Barraud
- CEA, LETI , MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
| | - M Vinet
- CEA, LETI , MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
| | - X Jehl
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
| | - M Sanquer
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
| | - J Renard
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
| | - S De Franceschi
- Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France
- CEA, INAC-SPSMS , F-38000 Grenoble, France
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33
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Li R, Hudson FE, Dzurak AS, Hamilton AR. Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot. NANO LETTERS 2015; 15:7314-8. [PMID: 26434407 DOI: 10.1021/acs.nanolett.5b02561] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ~0.93 and the strength of spin-orbit interaction ~110 μeV can be obtained. The demonstrated strong spin-orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.
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Affiliation(s)
- Ruoyu Li
- School of Physics, ‡Australian National Fabrication Facility, and §Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Fay E Hudson
- School of Physics, ‡Australian National Fabrication Facility, and §Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Andrew S Dzurak
- School of Physics, ‡Australian National Fabrication Facility, and §Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Alexander R Hamilton
- School of Physics, ‡Australian National Fabrication Facility, and §Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales , Sydney, New South Wales 2052, Australia
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34
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Fan D, Li S, Kang N, Caroff P, Wang LB, Huang YQ, Deng MT, Yu CL, Xu HQ. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy. NANOSCALE 2015; 7:14822-14828. [PMID: 26308470 DOI: 10.1039/c5nr04273a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.
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Affiliation(s)
- Dingxun Fan
- Department of Electronics and Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China.
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35
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Mueller F, Konstantaras G, Spruijtenburg PC, van der Wiel WG, Zwanenburg FA. Electron-Hole Confinement Symmetry in Silicon Quantum Dots. NANO LETTERS 2015; 15:5336-5341. [PMID: 26134900 DOI: 10.1021/acs.nanolett.5b01706] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron-hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.
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Affiliation(s)
- Filipp Mueller
- NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Georgios Konstantaras
- NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Paul C Spruijtenburg
- NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Wilfred G van der Wiel
- NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Floris A Zwanenburg
- NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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36
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Sivaram SV, Shin N, Chou LW, Filler MA. Direct Observation of Transient Surface Species during Ge Nanowire Growth and Their Influence on Growth Stability. J Am Chem Soc 2015; 137:9861-9. [DOI: 10.1021/jacs.5b03818] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Saujan V. Sivaram
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Naechul Shin
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Li-Wei Chou
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Michael A. Filler
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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37
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Hnida KE, Bäβler S, Akinsinde L, Gooth J, Nielsch K, Socha RP, Łaszcz A, Czerwinski A, Sulka GD. Tuning the polarity of charge transport in InSb nanowires via heat treatment. NANOTECHNOLOGY 2015; 26:285701. [PMID: 26112309 DOI: 10.1088/0957-4484/26/28/285701] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
InSb nanowire (NW) arrays were prepared by pulsed electrodeposition combined with a porous template technique. The resulting polycrystalline material has a stoichiometric composition (In:Sb = 1:1) and a high length-to-diameter ratio. Based on a combination of Fourier transform infrared spectroscopy (FTIR) analysis and field-effect measurements, the band gap, the charge carrier polarity, the carrier concentration, the mobility and the effective mass for the InSb NWs was investigated. In this preliminary work, a transition from p-type to n-type charge transport was observed when the InSb NWs were subjected to annealing.
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Affiliation(s)
- Katarzyna E Hnida
- Jagiellonian University in Krakow, Department of Physical Chemistry and Electrochemistry, Ingardena 3, 30-060 Krakow, Poland. AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, A. Mickiewicza 30, 30-059 Krakow, Poland
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38
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Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain. Nat Commun 2015; 6:6348. [PMID: 25704639 PMCID: PMC4346613 DOI: 10.1038/ncomms7348] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2014] [Accepted: 01/20/2015] [Indexed: 11/08/2022] Open
Abstract
Interaction with nuclear spins leads to decoherence and information loss in solid-state electron-spin qubits. One particular, ineradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclear-nuclear dipolar interactions. Owing to its many-body nature nuclear decoherence is difficult to predict, especially for an important class of strained nanostructures where nuclear quadrupolar effects have a significant but largely unknown impact. Here, we report direct measurement of nuclear spin bath coherence in individual self-assembled InGaAs/GaAs quantum dots: spin-echo coherence times in the range 1.2-4.5 ms are found. Based on these values, we demonstrate that strain-induced quadrupolar interactions make nuclear spin fluctuations much slower compared with lattice-matched GaAs/AlGaAs structures. Our findings demonstrate that quadrupolar effects can potentially be used to engineer optically active III-V semiconductor spin-qubits with a nearly noise-free nuclear spin bath, previously achievable only in nuclear spin-0 semiconductors, where qubit network interconnection and scaling are challenging.
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39
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Chen G, McGuckin T, Hawley CJ, Gallo EM, Prete P, Miccoli I, Lovergine N, Spanier JE. Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires. NANO LETTERS 2015; 15:75-79. [PMID: 25545191 DOI: 10.1021/nl502995q] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We demonstrate spatial probing of carrier transport within GaAs/AlGaAs core-shell nanowires with nanometer lateral resolution and subsurface sensitivity by energy-variable electron beam induced current imaging. Carrier drift that evolves with applied electric field is distinguished from a coupled drift-diffusion length. Along with simulation of injected electron trajectories, combining beam energy tuning with precise positioning for selective probing of core and shell reveals axial position- and bias-dependent differences in carrier type and transport along parallel conduction channels. These results indicate how analysis of transport within heterostructured nanomaterials is no longer limited to nonlocal or surface measurements.
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Affiliation(s)
- Guannan Chen
- Department of Materials Science and Engineering and ∥Department of Physics, Drexel University , 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, United States
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Rossella F, Bertoni A, Ercolani D, Rontani M, Sorba L, Beltram F, Roddaro S. Nanoscale spin rectifiers controlled by the Stark effect. NATURE NANOTECHNOLOGY 2014; 9:997-1001. [PMID: 25383514 DOI: 10.1038/nnano.2014.251] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2014] [Accepted: 10/01/2014] [Indexed: 05/27/2023]
Abstract
The control of orbitals and spin states of single electrons is a key ingredient for quantum information processing and novel detection schemes and is, more generally, of great relevance for spintronics. Coulomb and spin blockade in double quantum dots enable advanced single-spin operations that would be available even for room-temperature applications with sufficiently small devices. To date, however, spin operations in double quantum dots have typically been observed at sub-kelvin temperatures, a key reason being that it is very challenging to scale a double quantum dot system while retaining independent field-effect control of individual dots. Here, we show that the quantum-confined Stark effect allows two dots only 5 nm apart to be independently addressed without the requirement for aligned nanometre-sized local gating. We thus demonstrate a scalable method to fully control a double quantum dot device, regardless of its physical size. In the present implementation we present InAs/InP nanowire double quantum dots that display an experimentally detectable spin blockade up to 10 K. We also report and discuss an unexpected re-entrant spin blockade lifting as a function of the magnetic field intensity.
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Affiliation(s)
- Francesco Rossella
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56124 Pisa, Italy
| | - Andrea Bertoni
- S3, Istituto Nanoscienze-CNR, Via Campi 213a, I-41125 Modena, Italy
| | - Daniele Ercolani
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56124 Pisa, Italy
| | - Massimo Rontani
- S3, Istituto Nanoscienze-CNR, Via Campi 213a, I-41125 Modena, Italy
| | - Lucia Sorba
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56124 Pisa, Italy
| | - Fabio Beltram
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56124 Pisa, Italy
| | - Stefano Roddaro
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56124 Pisa, Italy
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Pawłowski J, Szumniak P, Skubis A, Bednarek S. Electron spin separation without magnetic field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:345302. [PMID: 25106038 DOI: 10.1088/0953-8984/26/34/345302] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A nanodevice capable of separating spins of two electrons confined in a quantum dot formed in a gated semiconductor nanowire is proposed. Two electrons confined initially in a single quantum dot in the singlet state are transformed into the system of two electrons confined in two spatially separated quantum dots with opposite spins. In order to separate the electrons' spins we exploit transitions between the singlet and the triplet state, which are induced by resonantly oscillating Rashba spin-orbit coupling strength. The proposed device is all electrically controlled and the electron spin separation can be realized within tens of picoseconds. The results are supported by solving numerically the quasi-one-dimensional time-dependent Schroedinger equation for two electrons, where the electron-electron correlations are taken into account in the exact manner.
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Affiliation(s)
- J Pawłowski
- Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Kraków, Poland
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Higginbotham AP, Larsen TW, Yao J, Yan H, Lieber CM, Marcus CM, Kuemmeth F. Hole spin coherence in a Ge/Si heterostructure nanowire. NANO LETTERS 2014; 14:3582-6. [PMID: 24797219 DOI: 10.1021/nl501242b] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
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Affiliation(s)
- A P Higginbotham
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
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van der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S. Probing the spin states of a single acceptor atom. NANO LETTERS 2014; 14:1492-1496. [PMID: 24571637 DOI: 10.1021/nl4047015] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.
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Affiliation(s)
- Joost van der Heijden
- Centre for Quantum Computation and Communication Technology and ‡School of Physics, University of New South Wales , Sydney NSW 2052, Australia
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Huang S, Zhu F, Qiu H, Xiao Q, Zhou Q, Su W, Hu B. A sensitive quantum dots-based "OFF-ON" fluorescent sensor for ruthenium anticancer drugs and ctDNA. Colloids Surf B Biointerfaces 2014; 117:240-7. [PMID: 24657609 DOI: 10.1016/j.colsurfb.2014.02.031] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2013] [Revised: 02/17/2014] [Accepted: 02/19/2014] [Indexed: 12/11/2022]
Abstract
In this contribution, a simple and sensitive fluorescent sensor for the determination of both the three ruthenium anticancer drugs (1 to 3) and calf thymus DNA (ctDNA) was established based on the CdTe quantum dots (QDs) fluorescence "OFF-ON" mode. Under the experimental conditions, the fluorescence of CdTe QDs can be effectively quenched by ruthenium anticancer drugs because of the surface binding of these drugs on CdTe QDs and the subsequent photoinduced electron transfer (PET) process from CdTe QDs to ruthenium anticancer drugs, which render the system into fluorescence "OFF" status. The system can then be "ON" after the addition of ctDNA which brought the restoration of CdTe QDs fluorescence intensity, since ruthenium anticancer drugs broke away from the surface of CdTe QDs and inserted into double helix structure of ctDNA. The fluorescence quenching effect of the CdTe QDs-ruthenium anticancer drugs systems was mainly concentration dependent, which could be used to detect three ruthenium anticancer drugs. The limits of detection were 5.5 × 10(-8) M for ruthenium anticancer drug 1, 7.0 × 10(-8) M for ruthenium anticancer drug 2, and 7.9× 10(-8) M for ruthenium anticancer drug 3, respectively. The relative restored fluorescence intensity was directly proportional to the concentration of ctDNA in the range of 1.0 × 10(-8) M ∼ 3.0 × 10(-7) M, with a correlation coefficient (R) of 0.9983 and a limit of detection of 1.1 × 10(-9) M. The relative standard deviation (RSD) for 1.5 × 10(-7) M ctDNA was 1.5% (n = 5). There was almost no interference to some common chemical compounds, nucleotides, amino acids, and proteins. The proposed method was applied to the determination of ctDNA in three synthetic samples with satisfactory results. The possible reaction mechanism of CdTe QDs fluorescence "OFF-ON" was further investigated. This simple and sensitive approach possessed some potential applications in the investigation of interaction between drug molecules and DNA.
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Affiliation(s)
- Shan Huang
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China.
| | - Fawei Zhu
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China
| | - Hangna Qiu
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China
| | - Qi Xiao
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China.
| | - Quan Zhou
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China
| | - Wei Su
- College of Chemistry and Life Science, Guangxi Teachers Education University, Nanning 530001, PR China.
| | - Baoqing Hu
- Key Laboratory of Beibu Gulf Environment Change and Resources Utilization (Guangxi Teachers Education University), Ministry of Education, China
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It's all about data. NATURE NANOTECHNOLOGY 2013; 8:691. [PMID: 24091446 DOI: 10.1038/nnano.2013.216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
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Yang F, Wang Q, Gu Z, Fang K, Marriott G, Gu N. Silver nanoparticle-embedded microbubble as a dual-mode ultrasound and optical imaging probe. ACS APPLIED MATERIALS & INTERFACES 2013; 5:9217-23. [PMID: 23988030 DOI: 10.1021/am4029747] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Microbubbles (MBs) coupled with nanoparticles represent a new class of multifunctional probe for multiscale biomedical imaging and drug delivery. In this study, we describe the development of multifunctional, microscale microbubble probes that are composed of a nitrogen gas core and a biocompatible polymer shell harboring silver nanoparticles (AgNPs). Ultrasound imaging studies show that the presence of AgNPs in the MB significantly improves the contrast of ultrasound images. The AgNPs within individual MB can be also imaged by using dark-field microscopy (DFM), which suggests that AgNPs in the polymer shell adopt multiple structural forms. AgNPs are released from the polymer shell following a brief exposure to an ultrasonic field and are subsequently taken up by living cells. AgNPs within labeled cells are imaged by DFM, while surface-enhanced Raman scattering is used to identify specific cytoplasmic biomolecules that bind to the surface of the AgNP. Collectively, these studies demonstrate the application of multifunctional MBs for micrometer scale contrast-enhanced ultrasound imaging, as vehicles for the ultrasound-based delivery of optical probes and drugs to cells, and for imaging of chemical sensing of individual nanopartiles within cells and tissue.
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Affiliation(s)
- Fang Yang
- State Key Laboratory of Bioelectronics, Jiangsu Key Laboratory for Biomaterials and Devices, School of Biological Science and Medical Engineering, Southeast University , Nanjing 210096, P. R. China
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