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Cui L, An S, Yit Loong Lee H, Liu GX, Wang H, Wang HY, Wu L, Dong Z, Wang L. Dynamic Ultrastrong Coupling in a 2 nm Gap Plasmonic Cavity at the Sub-Picosecond Scale. NANO LETTERS 2024. [PMID: 39038175 DOI: 10.1021/acs.nanolett.4c02288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Localized surface plasmon resonances (LSPRs) can enhance the electromagnetic fields on metallic nanostructures upon light illumination, providing an approach for manipulating light-matter interactions at the sub-wavelength scale. However, currently, there is no thorough investigation of the physical mechanism in the dynamic formation of the strongly coupled LSPRs on sub-5 nm plasmonic cavities at the sub-picosecond scale. In this work, through femtosecond broadband transient absorption spectroscopy, we reveal the dynamic ultrastrong coupling processes in a nanoparticle-in-trench (NPiT) structure containing 2 nm gap cavities, and demonstrate a coherent motional coupling between vibrating AuNPs and the nanogaps. We achieve a maximum Rabi splitting energy of ∼660 meV in the sub-picosecond hot-electron relaxation time scale under the resonant excitation of the nanogap cavity's LSPR, reaching the ultrastrong coupling regime. This leads to a change of global vibration modes for the 2 nm gap cavity, potentially related to the dynamical Casimir effect with nanogap resonators.
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Affiliation(s)
- Lin Cui
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Shu An
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Henry Yit Loong Lee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Guang-Xin Liu
- Science, Mathematics, and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Republic of Singapore
| | - Hai Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Hai-Yu Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Lin Wu
- Science, Mathematics, and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Republic of Singapore
- Institute of High Performance Computing, Agency for Science, Technology, and Research (A*STAR), 1 Fusionopolis Way, Innovis #16-16, Singapore 138632, Republic of Singapore
| | - Zhaogang Dong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Republic of Singapore
| | - Lei Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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Zhao K, Wang Y, Lin K, Ji T, Shi L, Zheng K, Cui Y, Li G. High-Quality Solution-Processed Quasi-2D Perovskite for Low-Threshold Lasers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22361-22368. [PMID: 38628106 DOI: 10.1021/acsami.4c00308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Spin-coated quasi-two-dimensional halide perovskite films, which exhibit superior optoelectronic properties and environmental stability, have recently been extensively studied for lasers. Crystallinity is of great importance for the laser performance. Although some parameters related to the spin-coating process have been studied, the in-depth understanding and effective control of the acceleration rate on two-dimensional perovskite crystallization during spin-coating are still unknown. Here we investigate the effect of solvent evaporation on the microstructure of the final perovskite films during the spin-coating process. The crystallization quality of the film can be significantly improved by controlling solvent evaporation. As a result, the prepared quasi-2D perovskite film exhibits a stimulated emission threshold (pump: 343 nm, 6 kHz, 290 fs) of 550 nm as low as 16.2 μJ/cm2. Transient absorption characterization shows that the radiative biexciton recombination time is reduced from 738.5 to 438.3 ps, benefiting from the improved crystallinity. The faster biexciton recombination significantly enhanced the photoluminescence efficiency, which is critical for population inversion. This work could contribute to the development of low-threshold lasers.
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Affiliation(s)
- Kefan Zhao
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Yujing Wang
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Kai Lin
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Ting Ji
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Linlin Shi
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Kaibo Zheng
- Chemical Physics Division and NanoLund, Lund University, Box 124, Lund 22100, Sweden
| | - Yanxia Cui
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030006, China
| | - Guohui Li
- College of Physics and Optoelectronics, Key Laboratory of Interface Science and Engineering in Advanced Materials, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030006, China
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Lou X, Yao L, Zhang J, Sui N, Wu M, Zhang W, Kang Z, Chi X, Zhou Q, Zhang H, Wang Y. Competition of Carrier Kinetics Contributes to Amplified Spontaneous Emission in Quasi-2D/3D (PBA) 2MA n-1Pb nBr 3n+1 Thin Films under Strip Light Mode. J Phys Chem Lett 2023; 14:4050-4057. [PMID: 37093818 DOI: 10.1021/acs.jpclett.3c00490] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Quasi-2D halide perovskites have potential in lasing due to their amplified spontaneous emission (ASE) properties. The ASE of (PBA)2MAn-1PbnBr3n+1 thin films has been confirmed by photoluminescence (PL) testing using stripe light excitation (SLE). The ASE threshold decreases with decreasing environmental temperature (TE) or increasing number of inorganic layers (n). Using the transient absorption technique, the Auger recombination and the cooling process of the high-activity carrier are accelerated with the decrease of n or TE. A new ASE mechanism is proposed where high-activity carriers directly emit photons under photon perturbation from adjacent sites, leading to the accumulation and amplification of emitted photons only in the SLE region for ASE to occur. In addition, the reduction of n promotes light scattering between nano-thin layers, which supports a rapid increase in the ASE signal after the ASE threshold is crossed.
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Affiliation(s)
- Xue Lou
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Lianfei Yao
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Ning Sui
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Min Wu
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Wei Zhang
- School of Physics and Materials Science, Guangzhou University, Guangzhou, 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
| | - Zhihui Kang
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Xiaochun Chi
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Qiang Zhou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Hanzhuang Zhang
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Yinghui Wang
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
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