Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

Thermal Stability and Purity of Graphene and Carbon Nanotubes: Key Parameters for Their Thermogravimetric Analysis (TGA)

Thermal analysis is widely employed for the characterization of nanomaterials. It encompasses a variety of techniques that allow the evaluation of the physicochemical properties of a material by monitoring its response under controlled temperature. In the case of carbon nanomaterials, such as carbon nanotubes and graphene derivatives, thermogravimetric analysis (TGA) is particularly useful to determine the quality and stability of the sample, the presence of impurities and the degree of functionalization or doping after post-synthesis treatments. Furthermore, TGA is widely used to evaluate the thermal stability against oxidation by air, which can be, for instance, enhanced by the purification of the material and by nitrogen doping, finding application in areas where a retarded combustion of the material is required. Herein, we have evaluated key parameters that play a role in the data obtained from TGA, namely, gas flow rate, sample weight and temperature rate, used during the analysis. We found out that the heating rate played the major role in the process of combustion in the presence of air, inducing an increase in the temperature at which the oxidation of CNTs starts to occur, up to ca. 100 °C (from 1 °C min-1 to 50 °C min-1). The same trend was observed for all the evaluated systems, namely N-doped CNTs, graphene produced by mechanical exfoliation and N-doped reduced graphene samples. Other aspects, like the presence of impurities or structural defects in the evaluated samples, were analyzed by TGA, highlighting the versatility and usefulness of the technique to provide information of structural aspects and properties of carbon materials. Finally, a set of TGA parameters are recommended for the analysis of carbon nanomaterials to obtain reliable data.

Highly Sensitive Hall Sensors Based on Chemical Vapor Deposition Graphene

In this work, we demonstrate highly sensitive and scalable Hall sensors fabricated by adopting arrays of monolayer single-crystal chemical vapor deposition (CVD) graphene. The devices are based on graphene Hall bars with a carrier mobility of >12000 cm2 V-1 s-1 and a low residual carrier density of ∼1 × 1011 cm-2, showing Hall sensitivity higher than 5000 V A-1 T-1, which is a value previously only achieved when using exfoliated graphene encapsulated with flakes of hexagonal boron nitride. We also implement a facile and scalable polymeric encapsulation, allowing the performance of graphene Hall bars to be stabilized when measured in an ambient environment. We demonstrate that this capping method can reduce the degradation of electrical transport properties when the graphene devices are kept in air over 10 weeks. State-of-the-art performance of the realized devices, based on scalable synthesis and encapsulation, contributes to the proliferation of graphene-based Hall sensors.

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

Multifunctional carbon nitride nanoarchitectures for catalysis

Catalysis is at the heart of modern-day chemical and pharmaceutical industries, and there is an urgent demand to develop metal-free, high surface area, and efficient catalysts in a scalable, reproducible and economic manner. Amongst the ever-expanding two-dimensional materials family, carbon nitride (CN) has emerged as the most researched material for catalytic applications due to its unique molecular structure with tunable visible range band gap, surface defects, basic sites, and nitrogen functionalities. These properties also endow it with anchoring capability with a large number of catalytically active sites and provide opportunities for doping, hybridization, sensitization, etc. To make considerable progress in the use of CN as a highly effective catalyst for various applications, it is critical to have an in-depth understanding of its synthesis, structure and surface sites. The present review provides an overview of the recent advances in synthetic approaches of CN, its physicochemical properties, and band gap engineering, with a focus on its exclusive usage in a variety of catalytic reactions, including hydrogen evolution reactions, overall water splitting, water oxidation, CO2 reduction, nitrogen reduction reactions, pollutant degradation, and organocatalysis. While the structural design and band gap engineering of catalysts are elaborated, the surface chemistry is dealt with in detail to demonstrate efficient catalytic performances. Burning challenges in catalytic design and future outlook are elucidated.

Graphene Hybrid Metasurfaces for Mid-Infrared Molecular Sensors

We integrated graphene with asymmetric metal metasurfaces and optimised the geometry dependent photoresponse towards optoelectronic molecular sensor devices. Through careful tuning and characterisation, combining finite-difference time-domain simulations, electron-beam lithography-based nanofabrication, and micro-Fourier transform infrared spectroscopy, we achieved precise control over the mid-infrared peak response wavelengths, transmittance, and reflectance. Our methods enabled simple, reproducible and targeted mid-infrared molecular sensing over a wide range of geometrical parameters. With ultimate minimization potential down to atomic thicknesses and a diverse range of complimentary nanomaterial combinations, we anticipate a high impact potential of these technologies for environmental monitoring, threat detection, and point of care diagnostics.

Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions

2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.

Accurate graphene quantum Hall arrays for the new International System of Units

Graphene quantum Hall effect (QHE) resistance standards have the potential to provide superior realizations of three key units in the new International System of Units (SI): the ohm, the ampere, and the kilogram (Kibble Balance). However, these prospects require different resistance values than practically achievable in single graphene devices (~12.9 kΩ), and they need bias currents two orders of magnitude higher than typical breakdown currents I_C ~ 100 μA. Here we present experiments on quantization accuracy of a 236-element quantum Hall array (QHA), demonstrating R_K/236 ≈ 109 Ω with 0.2 part-per-billion (nΩ/Ω) accuracy with I_C ≥ 5 mA (~1 nΩ/Ω accuracy for I_C = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array accuracy, comparable to the most precise universality tests of QHE, together with the scalability and reliability of this approach, pave the road for wider use of graphene in the new SI and beyond.

The 2019 redefinition of the International System of Units requires a 100 Ω quantum resistance standard for the ideal electrical realization of the kilogram via the Kibble Balance. Here, the authors report the realization of an array of 236 graphene quantum Hall bars, demonstrating a quantized resistance of 109 Ω with an accuracy of 0.2 nΩ/Ω over an extended range of bias currents.

Defect Density-Dependent pH Response of Graphene Derivatives: Towards the Development of pH-Sensitive Graphene Oxide Devices

In this study, we demonstrate that a highly pH-sensitive substrate could be fabricated by controlling the type and defect density of graphene derivatives. Nanomaterials from single-layer graphene resembling a defect-free structure to few-layer graphene and graphene oxide with high defect density were used to demonstrate the pH-sensing mechanisms of graphene. We show the presence of three competing mechanisms of pH sensitivity, including the availability of functional groups, the electrochemical double layer, and the ion trapping that determines the overall pH response. The graphene surface was selectively functionalized with hydroxyl, amine, and carboxyl groups to understand the role and density of the graphene pH-sensitive functional groups. Later, we establish the development of highly pH-sensitive graphene oxide by controlling its defect density. This research opens a new avenue for integrating micro-nano-sized pH sensors based on graphene derivatives into next-generation sensing platforms.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Nitrogen Functionalities of Amino-Functionalized Nitrogen-Doped Graphene Quantum Dots for Highly Efficient Enhancement of Antimicrobial Therapy to Eliminate Methicillin-Resistant Staphylococcus aureus and Utilization as a Contrast Agent

There is an urgent need for materials that can efficiently generate reactive oxygen species (ROS) and be used in photodynamic therapy (PDT) as two-photon imaging contrast probes. In this study, graphene quantum dots (GQDs) were subjected to amino group functionalization and nitrogen doping (amino-N-GQDs) via annealing and hydrothermal ammonia autoclave treatments. The synthesized dots could serve as a photosensitizer in PDT and generate more ROS than conventional GQDs under 60-s low-energy (fixed output power: 0.07 W·cm⁻²) excitation exerted by a 670-nm continuous-wave laser. The generated ROS were used to completely eliminate a multidrug-resistant strain of methicillin-resistant Staphylococcus aureus (MRSA), a Gram-positive bacterium. Compared with conventional GQDs, the amino-N-GQDs had superior optical properties, including stronger absorption, higher quantum yield (0.34), stronger luminescence, and high stability under exposure. The high photostability and intrinsic luminescence of amino-N-GQDs contribute to their suitability as contrast probes for use in biomedical imaging, in addition to their bacteria tracking and localization abilities. Herein, the dual-modality amino-N-GQDs in PDT easily eliminated multidrug-resistant bacteria, ultimately revealing their potential for use in future clinical applications.

Strain Engineering in 2D Material-Based Flexible Optoelectronics

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.

Large Responsivity of Graphene Radiation Detectors With Thermoelectric Readout: Results of Simulations

Simple estimations show that the thermoelectric readout in graphene radiation detectors can be extremely effective even for graphene with modest charge-carrier mobility ∼1000 cm2/(Vs). The detector responsivity depends mostly on the residual charge-carrier density and split-gate spacing and can reach competitive values of ∼103–104 V/W at room temperature. The optimum characteristics depend on a trade-off between the responsivity and the total device resistance. Finding out the key parameters and their roles allows for simple detectors and their arrays, with high responsivity and sufficiently low resistance matching that of the radiation-receiving antenna structures.

Theoretical study of a p-n homojunction SiGe field-effect transistor via covalent functionalization

p-n homojunctions are superior to p-n heterojunctions in constructing nanoscale functional devices, owing to the excellent crystallographic alignment. We tune the electronic properties of monolayer siligene (SiGe) into p/n-type via the covalent functionalization of electrophilic/nucleophilic dopants, using ab initio quantum transport calculations. It is found that the n-type doping effect of K atoms is stronger than that of benzyl viologen (BV) molecule on the surface of SiGe monolayer, owing to the strong covalent interaction. Both of p-type 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)-adsorbed and n-type 4 K-adsorbed SiGe systems show enhanced optical absorption in the infrared region, indicating their promising applications in infrared optoelectronic devices. By spatially adsorbing F4TCNQ molecule and K atoms on the source and drain leads, respectively, we designed a p-n homojunction SiGe field-effect transistor (FET). It is predicted that the built F4TCNQ-4K/SiGe FET can meet the requirements for high-performance (the high current density) and low-power (low subthreshold swing (SS)) applications, according to the International Technology Roadmap for Semiconductors in 2028. The present study gains some key insights into the importance of surface functionalization in constructing p-n homojunction electronic and optoelectronic devices based on monolayer SiGe.

Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe

A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO)3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single probe wired for two types of quantum standards - GaAs, the established material, and graphene, the newer material that may promote the development of more user-friendly equipment.

Metrological Suitability of Functionalized Epitaxial Graphene

This work presents one solution for long-term storage of epitaxial graphene (EG) in air, namely through the functionalization of millimeter-scale devices with chromium tricarbonyl - Cr(CO)3. The carrier density may be tuned reproducibly by annealing below 400 K due to the presence of Cr(CO)3. All tuning is easily reversible with exposure to air, with the idle, in-air, carrier density always being close to the Dirac point. Precision measurements in the quantum Hall regime indicate no detrimental effects from the treatment, validating the pursuit of developing air-stable EG-based QHR devices.

Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications

Graphene decorated by palladium (Pd) nanoparticles has been investigated for hydrogen sensor applications. The density of Pd nanoparticles is critical for the sensor performance. We develop a new chemical method to deposit high-density, small-size and uniformly-distributed Pd nanoparticles on graphene. With this method, Pd precursors are connected to the graphene by π-π bonds without introducing additional defects in the hexagonal carbon lattice. Our method is simple, cheap, and compatible with complementary metal-oxide semiconductor (CMOS) technology. This method is used to fabricate hydrogen sensors on 3-inch silicon wafers. The sensors show high performance at room temperature. Particularly, the sensors present a shorter recovery time under light illumination. The sensing mechanism is explained and discussed. The proposed deposition method facilitates mass fabrication of the graphene sensors and allows integration with CMOS circuits for practical applications.

The Quantum Hall Effect in the Era of the New SI

The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the foundation of the ohm while also expanding its territory into other SI derived units. The foundation, evolution, and significance of all of these devices exhibiting some form of the QHE will be described in the context of optimizing future electrical resistance standards. As the world adapts to using the quantum SI, it remains essential that the global metrology community pushes forth and continues to innovate and produce new technologies for disseminating the ohm and other electrical units.

Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν = 2 (R H ≈ 12906 Ω) that take the form:a b R H . Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of R H. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl

Monolayer epitaxial graphene (EG) has been shown to have clearly superior properties for the development of quantized Hall resistance (QHR) standards. One major difficulty with QHR devices based on EG is that their electrical properties drift slowly over time if the device is stored in air due to adsorption of atmospheric molecular dopants. The crucial parameter for device stability is the charge carrier density, which helps determine the magnetic flux density required for precise QHR measurements. This work presents one solution to this problem of instability in air by functionalizing the surface of EG devices with chromium tricarbonyl -Cr(CO)3. Observations of carrier density stability in air over the course of one year are reported, as well as the ability to tune the carrier density by annealing the devices. For low temperature annealing, the presence of Cr(CO)3 stabilizes the electrical properties and allows for the reversible tuning of the carrier density in millimeter-scale graphene devices close to the Dirac point. Precision measurements in the quantum Hall regime show no detrimental effect on the carrier mobility.

Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices

Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared to GaAs QHR devices and a 100 Ω standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of the 100 Ω resistor with the graphene QHR devices agreed within 5 nΩ/Ω of the values for the 100 Ω resistor obtained through GaAs measurements. The electron density of the graphene devices was adjusted at AIST to restore device properties such that operation was possible at low magnetic flux densities of 4 T to 6 T. This adjustment was accomplished with a functionalization method utilized at NIST, allowing for consistent tunability of the graphene QHR devices with simple annealing. Such a method replaces older and less predictable methods for adjusting graphene for metrological suitability. The milestone results demonstrate the ease with which graphene can be used to make resistance comparison measurements among many National Metrology Institutes.