Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO3 substrate

Polarity-Switchable Sensitive Photodetection in a Superconducting van der Waals Heterostructure

The exploration of switchable photoconductivity, alternating between positive and negative responses, has been conducted across various materials and systems, presenting numerous potential applications, including optical logic gates, quantum computing, and optoelectronic integration. Nevertheless, many existing polarity-tunable photodetectors struggle with low responsivity or a restricted spectral range, limiting effective information processing, storage, and energy transfer efficiency. In this research, we introduce a superconducting photodetector constructed from a NbSe2-WTe2-NbSe2 van der Waals heterostructure, which demonstrates a highly sensitive and adjustable photoresponse spanning the visible to near-infrared spectrum. In the high bias voltage range, we observe a conventional negative photoresponse, attributed to the photoinduced superconducting phase transition of NbSe2. Conversely, in the low bias voltage regime, we detect an unusual positive photoconductivity associated with light-modulated Andreev reflection at the superconducting interface. Both types of photoresponsivity surpass 0.3 A/W (0.35 A/W for positive and -5 A/W for negative photocurrent signals), and the polarity of photoconductivity can be toggled by precisely adjusting the bias voltage, excitation light power, or temperature. Our results provide fresh insights into the physical mechanisms behind superconducting photodetectors influenced by quantum effects, with significant implications for the development of optoelectronic devices in information processing.

Gate-Controlled Superconducting Switch in GaSe/NbSe2 van der Waals Heterostructure

The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit, and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe2 van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe2 under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial for the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal states under an electric field. Our findings highlight the significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors and demonstrate the potential for applications in superconducting integrated circuits.

Reversible modulation of superconductivity in thin-film NbSe2 via plasmon coupling

In recent years, lightwave has stood out as an ultrafast, non-contact control knob for developing compact superconducting circuitry. However, the modulation efficiency is limited by the low photoresponse of superconductors. Plasmons, with the advantages of strong light-matter interaction, present a promising route to overcome the limitations. Here we achieve effective modulation of superconductivity in thin-film NbSe2 via near-field coupling to plasmons in gold nanoparticles. Upon resonant plasmon excitation, the superconductivity of NbSe2 is substantially suppressed. The modulation factor exceeds 40% at a photon flux of 9.36 × 1013 s-1mm-2, and the effect is significantly diminished for thicker NbSe2 samples. Our observations can be theoretically interpreted by invoking the non-equilibrium electron distribution in NbSe2 driven by the plasmon-associated evanescent field. Finally, a reversible plasmon-driven superconducting switch is realized in this system. These findings highlight plasmonic tailoring of quantum states as an innovative strategy for superconducting electronics.

Optically Gated Electrostatic Field-Effect Thermal Transistor

Dynamic tuning of thermal transport in solids is scientifically intriguing with wide applications for thermal transport control in electronic devices. In this work, we demonstrate a thermal transistor, a device in which heat flow can be regulated using external control, realized in a topological insulator (TI) through the topological surface states. The tuning of thermal transport is achieved by using optical gating of a thin dielectric layer deposited on the TI film. The gate-dependent thermal conductivity is measured using micro-Raman thermometry. The transistor has a large ON/OFF ratio of 2.8 at room temperature and can be continuously and repetitively switched in tens of seconds by optical gating and potentially much faster by electrical gating. Such thermal transistors with a large ON/OFF ratio and fast switching times offer the possibilities of smart thermal devices for active thermal management and control in future electronic systems.

Magnetic Field-Induced Spin Nematic Phase Up to Room Temperature in Epitaxial Antiferromagnetic FeTe Thin Films Grown by Molecular Beam Epitaxy

Electronic nematicity, where strong correlations drive electrons to align in a way that lowers the crystal symmetry, is ubiquitous among unconventional superconductors. Understanding the interplay of such a nematic state with other electronic phases underpins the complex behavior of these materials and the potential for tuning their properties through external stimuli. Here, we report magnetic field-induced spin nematicity in a model system tetragonal FeTe, the parent compound of iron chalcogenide superconductors, which exhibits a bicollinear antiferromagnetic order. The studies were conducted on epitaxial FeTe thin films grown on SrTiO3(001) substrates by molecular beam epitaxy, where the bicollinear antiferromagnetic order was confirmed by in situ atomic resolution scanning tunneling microscopy imaging. A 2-fold anisotropy is observed in in-plane angle-dependent magnetoresistance measurements, indicative of magnetic field-induced nematicity. Such 2-fold anisotropy persists up to 300 K, well-above the bicollinear antiferromagnetic ordering temperature of 75 K, indicating a magnetic field-induced spin nematic phase up to room temperature in the antiferromagnet FeTe.

Electrical switching of a bistable moiré superconductor

Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements^1-4, superconducting field-effect transistors (FETs)^5-7 and gate-tunable qubits^8-10. Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered^11,12. Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers. This bistable behaviour coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new switchable moiré superconductor into highly tunable superconducting electronics.

Realization of multiple luminescence manipulation in tungsten bronze oxides based on photochromism toward real-time, reversible, and fast processes

Multiple luminescence manipulation in tungsten bronze oxides based on photochromism.

Suppression and Revival of Superconducting Phase Coherence in Monolayer FeSe/SrTiO3

Monolayer FeSe grown on SrTiO₃ (FeSe/STO) is an interfacial high-temperature superconductor distinctively different from bulk FeSe. However, the superconducting phase coherence of the interface is challenging to probe due to its fragility in the atmosphere. Here, we perform in situ mutual inductance under ultrahigh vacuum on FeSe/STO in combination with band mapping by angle-resolved photoemission spectroscopy. We find that even though the monolayer shows a gap-closing temperature above 50 K, no diamagnetism is visible down to 5 K. This is the case for few-layer FeSe/STO until it exceeds a critical number of five layers, where diamagnetism suddenly appears. The suppression of diamagnetism in the monolayer is also lifted by depositing a top FeTe layer. However, T_c and superfluid density both decrease with thicker FeTe, suggesting unconventional electron pairing and phase coherence competition. Our observation may be understood by a scenario in which the interfacial superconducting phase coherence is highly anisotropic.

Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe2 Lateral Heterostructure

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe₂ by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x², indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.

Stoichiometric Growth of Monolayer FeSe Superconducting Films Using a Selenium Cracking Source

As a novel interfacial high-temperature superconductor, monolayer FeSe on SrTiO3 has been intensely studied in the past decade. The high selenium flux involved in the traditional growth method complicates the film’s composition and entails more sample processing to realize the superconductivity. Here we use a Se cracking source for the molecular beam epitaxy growth of FeSe films to boost the reactivity of the Se flux. Reflection high-energy electron diffraction shows that the growth rate of FeSe increases with the increasing Se flux when the Fe flux is fixed, indicating that the Se over-flux induces Fe vacancies. Through careful tuning, we find that the proper Se/Fe flux ratio with Se cracked that is required for growing stoichiometric FeSe is close to 1, much lower than that with the uncracked Se flux. Furthermore, the FeSe film produced by the optimized conditions shows high-temperature superconductivity in the transport measurements without any post-growth treatment. Our work reinforces the importance of stoichiometry for superconductivity and establishes a simpler and more efficient approach to fabricating monolayer FeSe superconducting films.

Research Progress of FeSe-based Superconductors Containing Ammonia/Organic Molecules Intercalation

As an important part of Fe-based superconductors, FeSe-based superconductors have become a hot field in condensed matter physics. The exploration and preparation of such superconducting materials form the basis of studying their physical properties. With the help of various alkali/alkaline-earth/rare-earth metals, different kinds of ammonia/organic molecules have been intercalated into the FeSe layer to form a large number of FeSe-based superconductors with diverse structures and different layer spacing. Metal cations can effectively provide carriers to the superconducting FeSe layer, thus significantly increasing the superconducting transition temperature. The orientation of organic molecules often plays an important role in structural modification and can be used to fine-tune superconductivity. This review introduces the crystal structures and superconducting properties of several typical FeSe-based superconductors containing ammonia/organic molecules intercalation discovered in recent years, and the effects of FeSe layer spacing and superconducting transition temperature are briefly summarized.

Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO_{3}

The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO_{3}, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO_{3} substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO_{3}, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings and relative peak intensities between the higher-order replicas, as well as other self-energy effects, allows us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of λ=0.19±0.02, providing valuable insights into the enhancement of superconductivity in monolayer FeSe/SrTiO_{3}. The methodology employed here can also serve as a new and general approach for making more rigorous and quantitative comparisons to theoretical calculations of electron-phonon interactions and coupling constants.

Spatially expandable fiber-based probes as a multifunctional deep brain interface

Understanding the cytoarchitecture and wiring of the brain requires improved methods to record and stimulate large groups of neurons with cellular specificity. This requires miniaturized neural interfaces that integrate into brain tissue without altering its properties. Existing neural interface technologies have been shown to provide high-resolution electrophysiological recording with high signal-to-noise ratio. However, with single implantation, the physical properties of these devices limit their access to one, small brain region. To overcome this limitation, we developed a platform that provides three-dimensional coverage of brain tissue through multisite multifunctional fiber-based neural probes guided in a helical scaffold. Chronic recordings from the spatially expandable fiber probes demonstrate the ability of these fiber probes capturing brain activities with a single-unit resolution for long observation times. Furthermore, using Thy1-ChR2-YFP mice we demonstrate the application of our probes in simultaneous recording and optical/chemical modulation of brain activities across distant regions. Similarly, varying electrographic brain activities from different brain regions were detected by our customizable probes in a mouse model of epilepsy, suggesting the potential of using these probes for the investigation of brain disorders such as epilepsy. Ultimately, this technique enables three-dimensional manipulation and mapping of brain activities across distant regions in the deep brain with minimal tissue damage, which can bring new insights for deciphering complex brain functions and dynamics in the near future.

Existing neural interfaces are limited in accessing one, small brain region. Here, the authors introduce a scaffold with helix hollow channels, which direct multisite multifunctional fibre probes into the brain at different angles, allowing for simultaneous recording and stimulation across distant regions.

Emerging Magnetic Interactions in van der Waals Heterostructures

Vertical van der Waals (vdWs) heterostructures based on layered materials are attracting interest as a new class of quantum materials, where interfacial charge-transfer coupling can give rise to fascinating strongly correlated phenomena. Transition metal chalcogenides are a particularly exciting material family, including ferromagnetic semiconductors, multiferroics, and superconductors. Here, we report the growth of an organic-inorganic heterostructure by intercalating molecular electron donating bis(ethylenedithio)tetrathiafulvalene into (Li,Fe)OHFeSe, a layered material in which the superconducting ground state results from the intercalation of hydroxide layer. Molecular intercalation in this heterostructure induces a transformation from a paramagnetic to spin-glass-like state that is sensitive to the stoichiometry of molecular donor and an applied magnetic field. Besides, electron-donating molecules reduce the electrical resistivity in the heterostructure and modify its response to laser illumination. This hybrid heterostructure provides a promising platform to study emerging magnetic and electronic behaviors in strongly correlated layered materials.

Superconductivity on Edge: Evidence of a One-Dimensional Superconducting Channel at the Edges of Single-Layer FeTeSe Antiferromagnetic Nanoribbons

How superconductivity emerges from antiferromagnetic ordering is an essential question for Fe-based superconductors. Here, we explore the effect of dimensionality on the interplay between antiferromagnetic ordering and superconductivity by investigating nanoribbons of single-layer FeTe_1-xSe_x films grown on SrTiO₃(001) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we find a one-dimensional (1D) superconducting channel 2 nm wide with a T_C of 42 ± 4 K on the edge of FeTe_1-xSe_x (x < 0.1) ribbons, coexisting with a non-superconducting ribbon interior that remains bicollinear antiferromagnetically ordered. Density functional theory calculations indicate that both Se and the presence of the edge destabilize the bicollinear antiferromagnetic magnetic order, resulting in a paramagnetic region near the edge with strong local checkerboard fluctuations that is conducive to superconductivity. Our results represent the highest T_C achieved in 1D superconductors and demonstrate an effective route toward stabilizing superconductivity in Fe-based superconductors at reduced dimensions.

Superconductivity enhancement in FeSe/SrTiO3: a review from the perspective of electron-phonon coupling

Single-layer FeSe films grown on SrTiO3, with the highest superconducting transition temperature (TC) among all the iron-based superconductors, serves as an ideal platform for studying the microscopic mechanisms of high-TCsuperconductivity. The significant role of interfacial coupling has been widely recognized, while the precise nature of theTCenhancement remains open. In this review, we focus on the investigations of the interfacial coupling in FeSe/SrTiO3from the perspective of electron-phonon coupling (EPC). The main content will include an overview of the experimental measurements associated with different theoretical models and arguments about the EPC. Especially, besides the discussions of EPC based on the measurements of electronic states, we will emphasize the analyses based on phonon measurements. A uniform picture about the nature of the EPC and its relation to theTCenhancement in FeSe/SrTiO3has still not achieved, which should be the key for further studies aiming to the in-depth understanding of high-TCsuperconductivity and the discovery of new superconductors with even enhancedTC.