Higher order effects in organic LEDs with sub-bandgap turn-on

Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit

The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.e., ~60%). As a novel solution, a hybrid organic-Si image sensor was developed by implementing B, G, and R organic photodiodes on four n-MOSFETs for photocurrent sensing. Photosensitive organic donor and acceptor materials were designed with cost-effective small molecules, i.e., the B, G, and R donor and acceptor small molecules were Coumarin6 and C_60, DMQA and MePTC, and ZnPc and TiOPc, respectively. The output voltage sensing margins (i.e., photocurrent signal difference) of the hybrid organic-Si B, G, and R image sensor pixels presented results 17, 11, and 37% higher than those of conventional Si CISs. In addition, the hybrid organic-Si B, G, and R image sensor pixels could achieve an ideal aperture ratio (i.e., ~100%) compared with a Si CIS pixel using the backside illumination process (i.e., ~60%). Moreover, they may display a lower fabrication cost than image sensors because of the simple image sensor structure (i.e., hybrid organic-Si photodiode with four n-MOSFETs).

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Understanding the degradation mechanism of TTA-based blue fluorescent OLEDs by exciton dynamics and transient electroluminescence measurements

The lifetime of blue organic light-emitting diodes (OLEDs) has always been a big challenge in practical applications. Blue OLEDs based on triplet-triplet annihilation (TTA) up-conversion materials have potential to achieve long lifetimes due to fusing two triplet excitons to one radiative singlet exciton, but there is a lack of an in-depth understanding of exciton dynamics on degradation mechanisms. In this work, we established a numerical model of exciton dynamics to study the impact factors in the stability of doped blue OLEDs based on TTA up-conversion hosts. By performing transient electroluminescence experiments, the intrinsic parameters related to the TTA up-conversion process of aging devices were determined. By combining the change of excess charge density in the emitting layer (EML) with aging time, it is concluded that the TTA materials are damaged by the excess electrons in the EML during ageing, which is the main degradation mechanism of OLEDs. This work provides a theoretical basis for preparing long-lifetime blue fluorescent OLEDs.

Blue organic light-emitting diode with a turn-on voltage of 1.47 V

Among the three primary colors, blue emission in organic light-emitting diodes (OLEDs) are highly important but very difficult to develop. OLEDs have already been commercialized; however, blue OLEDs have the problem of requiring a high applied voltage due to the high-energy of blue emission. Herein, an ultralow voltage turn-on at 1.47 V for blue emission with a peak wavelength at 462 nm (2.68 eV) is demonstrated in an OLED device with a typical blue-fluorescent emitter that is widely utilized in a commercial display. This OLED reaches 100 cd/m2, which is equivalent to the luminance of a typical commercial display, at 1.97 V. Blue emission from the OLED is achieved by the selective excitation of the low-energy triplet states at a low applied voltage by using the charge transfer (CT) state as a precursor and triplet-triplet annihilation, which forms one emissive singlet from two triplet excitons.

The fatigue effects in red emissive CdSe based QLED operated around turn-on voltage

The operational stability is a current bottleneck facing the quantum dot light-emitting diodes (QLEDs). In particular, the device working around turn-on voltage suffers from unbalanced charge injection and heavy power loss. Here, we investigate the operational stability of red emissive CdSe QLEDs operated at different applied voltages. Compared to the rising luminance at higher voltages, the device luminance quickly decreases when loaded around the turn-on voltage, but recovers after unloading or slight heat treatment, which is termed fatigue effects of operational QLED. The electroluminescence and photoluminescence spectra before and after a period of operation at low voltages show that the abrupt decrease in device luminance derives from the reduction of quantum yield in quantum dots. Combined with transient photoluminescence and electroluminescence measurements, as well as equivalent circuit model analysis, the electron accumulation in quantum dots mainly accounts for the observed fatigue effects of a QLED during the operation around turn-on voltage. The underlying mechanisms at the low-voltage working regime will be very helpful for the industrialization of QLED.

A Magnetic field sensor based on OLED / organic photodetector stack

In this study an all-organic magnetic field sensor based on an organic light emitting diode (OLED) and organic photodetector (OPD) layer stack is presented. This sensor opens possibilities to create printable, flexible magnetic field sensors using commercially viable components, allowing magnetic field sensors to be simply integrated into existing OLED technology. The sensor function is driven by the large magneto-electroluminescence (MEL) of a thermally activated delayed fluorescence (TADF)-emitter based OLED, which in reference devices have shown an MEL of about 60% for magnetic fields on the order of 10 mT. Maximum sensitivity of about 0.15 nA/mT (150 μV/mT or 15 mV/kG with amplification) is achieved at a magnetic field of 3 mT to 4 mT. While the detectivity is limited to ~ 10-3 T·Hz-1/2, we show this can be improved upon on as the magnetic field detection sensitivity of OLEDs measured by an external Si-detector is about an order of magnitude higher. Sensitivity of 2 nA/mT and detectivities better than 10-5 T·Hz -1/2 are demonstrated, and the intrinsic detectivity limit is estimated to be on the order of 10-9 T·Hz -1/2.

Sub-Bandgap-Voltage Electroluminescence of Light-Emitting Diodes

Sub-bandgap-voltage electroluminescence (EL) has been frequently reported in quantum dot, organic, and perovskite light-emitting diodes. Due to the complex physical process across devices, the underlying mechanism is still under intensive debate. Here, based on thermodynamics, we offer an orthodox explanation of sub-bandgap-voltage EL and discuss the applicability of the previously proposed models.

Direct detection of spin polarization in photoinduced charge transfer through a chiral bridge

It is well assessed that the charge transport through a chiral potential barrier can result in spin-polarized charges. The possibility of driving this process through visible photons holds tremendous potential for several aspects of quantum information science, e.g., the optical control and readout of qubits. In this context, the direct observation of this phenomenon via spin-sensitive spectroscopies is of utmost importance to establish future guidelines to control photo-driven spin selectivity in chiral structures. Here, we provide direct proof that time-resolved electron paramagnetic resonance (EPR) can be used to detect long-lived spin polarization generated by photoinduced charge transfer through a chiral bridge. We propose a system comprising CdSe quantum dots (QDs), as a donor, and C60, as an acceptor, covalently linked through a saturated oligopeptide helical bridge (χ) with a rigid structure of ∼10 Å. Time-resolved EPR spectroscopy shows that the charge transfer in our system results in a C60 radical anion, whose spin polarization maximum is observed at longer times with respect to that of the photogenerated C60 triplet state. Notably, the theoretical modelling of the EPR spectra reveals that the observed features may be compatible with chirality-induced spin selectivity, but the electronic features of the QD do not allow the unambiguous identification of the CISS effect. Nevertheless, we identify which parameters need optimization for unambiguous detection and quantification of the phenomenon. This work lays the basis for the optical generation and direct manipulation of spin polarization induced by chirality.

'Molecular Beam Epitaxy' on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques

Epitaxial growth, often termed "epitaxy", is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.

Ultralow-voltage operation of light-emitting diodes

For a light-emitting diode (LED) to generate light, the minimum voltage required is widely considered to be the emitter’s bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on perovskite, organic, quantum-dot and III–V semiconductors, light emission can be observed at record-low voltages of 36–60% of their bandgaps, exhibiting a large apparent energy gain of 0.6–1.4 eV per photon. For 17 types of LEDs with different modes of charge injection and recombination (dark saturation currents of ~10⁻³⁹–10⁻¹⁵mA cm⁻²), their emission intensity-voltage curves under low voltages show similar behaviours. These observations and their consistency with the diode simulations suggest the ultralow-voltage electroluminescence arises from a universal origin—the radiative recombination of non-thermal-equilibrium band-edge carriers whose populations are determined by the Fermi-Dirac function perturbed by a small external bias. These results indicate the potential of low-voltage LEDs for communications, computational and energy applications.

Light emission from 17 types of LEDs is observed at record-low voltages of 36–60% of the bandgaps, which cannot be explained by earlier theories. The electroluminescence-voltage curves reveal a unified mechanism for ultralow-voltage LED operation.

Designable Integration of Silicide Nanowire Springs as Ultra-Compact and Stretchable Electronic Interconnections

Stretchable electronics are finding widespread applications in bio-sensing, skin-mimetic electronics, and flexible displays, where high-density integration of elastic and durable interconnections is a key capability. Instead of forming a randomly crossed nanowire (NW) network, here, a large-scale and precise integration of highly conductive nickel silicide nanospring (SiNi_x -NS) arrays are demonstrated, which are fabricated out of an in-plane solid-liquid-solid guided growth of planar Si nanowires (SiNWs), and subsequent alloy-forming process that boosts the channel conductivity over 4 orders of magnitude (to 2 × 10⁴ S cm^-1 ). Thanks to the narrow diameter of the serpentine SiNi_x -NS channels, the elastic geometry engineering can be accomplished within a very short interconnection distance (down to ≈3 µm), which is crucial for integrating high-density displays or logic units in a rigid-island and elastic-interconnection configuration. Deployed over soft polydimethylsiloxane thin film substrate, the SiNi_x -NS array demonstrates an excellent stretchability that can sustain up to 50% stretching and for 10 000 cycles (at 15%). This approach paves the way to integrate high-density inorganic electronics and interconnections for high-performance health monitoring, displays, and on-skin electronic applications, based on the mature and rather reliable Si thin film technology.

Thermal assisted up-conversion electroluminescence in quantum dot light emitting diodes

Up-conversion electroluminescence, in which the energy of a emitted photon is higher than that of the excitation electron, is observed in quantum-dot light-emitting diodes. Here, we study its mechanism by investigating the effect of thermal energy on the charge injection dynamic. Based on the results of temperature-dependent electroluminescence and theoretical analysis, we reveal that at sub-bandgap voltage, holes can be successfully injected into quantum-dots via thermal-assisted thermionic-emission mechanism, thereby enabling the sub-bandgap turn-on and up-conversion electroluminescence of the devices. Further theoretical deduction and experimental results confirm that thermal-assisted hole-injection is the universal mechanism responsible for the up-conversion electroluminescence. This work uncovers the charge injection process and unlocks the sub-bandgap turn-on mechanism, which paves the road for the development of up-conversion devices with power conversion efficiency over 100%.

How holes are injected into quantum dots at sub-bandgap bias has puzzled researchers for years. Here, authors show, using temperature-dependent electroluminescence (EL) and theoretical analysis, such injection occurs via thermal-assisted thermionic-emission, consequently enabling the sub-bandgap turn-on and up-conversion EL.

Doping-free bandgap tunability in Fe2O3 nanostructured films

A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe2O3 nanostructured films is simply tuned by changing the synthesis temperature. The Fe2O3 nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe2O3 nanostructured films contain two mixtures of Fe2+ and Fe3+ cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe2+ cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe2O3 nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.

The role of orientation in the MEL response of OLEDs

Magneto electroluminescence (MEL) is emerging as a powerful tool to study spin dynamics in organic light emitting diodes (OLEDs). The shape of the MEL response is typically used to draw qualitative inference on the dominant process (singlet fission or triplet fusion) in the device. In this study, we develop a quantitative model for MEL and apply it to devices based on Rubrene, and three solution processable anthradithiophene emitters. The four emitters allow us to systematically vary the film structure between highly textured, poly-crystalline to amorphous. We find significant diversity in the MEL, with the textured films giving highly structured responses. We find that the additional structure does not coincide with energy anti-crossings, but intersections in the singlet character between adjacent states. In all cases the MEL can be adequately described by an extended Merrifield model. Via the inclusion of charge injection, we are able to draw additional information on underlying physics in OLED devices.

Comparisons of magnetic defects and coercive forces for Co/Si(100) and Co/rubrene/Si(100)

Spintronics can add new functionalities to electronic devices by utilizing the spin degree of freedom of electrons. Investigating magnetic defects is crucial for the performance of spintronics devices. However, the effects of magnetic defects that are introduced by the presence of organic materials on their magnetic properties remain unclear. Herein, we report on a novel method using rubrene combined with Kerr microscopy that enables quantitative and direct measurements of magnetic defect density. For Co/Si(100) at a magnetic field near the coercivity value, Kerr microscopy images show a dark image with some magnetic defects. Because of domain wall motion, small patches gradually change the contrast. These magnetic defects are immovable at different magnetic fields and serve as pinning sites for domain wall motion. Experimental evidence shows that coercive force can be reduced by controlling the magnetic defect density by introducing small amounts of rubrene into the films. Furthermore, direct quantitative measurements of magnetic defects show both a one-dimensional bowing of domain walls and strong defect-domain wall interactions in the films. Based on these findings, we propose a viable strategy for reducing the coercive force of Co/Si(100) by controlling the magnetic defect density and this new information promises to be valuable for future applications of spintronics devices.

Work Function Engineering of Electrohydrodynamic-Jet-Printed PEDOT:PSS Electrodes for High-Performance Printed Electronics

Poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) has demonstrated outstanding performance as a charge transport layer or an electrode in various electronic devices, including organic solar cells, organic light-emitting diodes, and organic field-effect transistors (OFETs). The electrical properties of these devices are affected by the contact properties at the PEDOT:PSS-semiconductor junction. In this research, we performed work function (WF) engineering of electrohydrodynamic (EHD)-jet-printed PEDOT:PSS and successfully used it as an electrode to fabricate high-performance OFETs and complementary logic circuits. Two types of PEDOT:PSS materials-one with a high WF (HWF, 5.28 eV) and the other with a low WF (LWF, 4.53 eV)-were synthesized and EHD-jet-printed. The WF of PEDOT:PSS was deterministically modulated by approximately 0.75 eV through simple mixing of the two synthesized PEDOT:PSS materials in various ratios. OFETs fabricated with HWF and LWF PEDOT:PSS electrodes showed excellent electrical properties, including the ON/OFF switching ratio higher than 10⁷ and the highest carrier mobility greater than 1 cm²·V^-1·s^-1. Furthermore, the HWF and LWF PEDOT:PSS electrodes were integrated to fabricate complementary metal-oxide-semiconductor (CMOS) NOT, NOR, and NAND circuits.

Origin of Subthreshold Turn-On in Quantum-Dot Light-Emitting Diodes

The subthreshold (or sub-bandgap) turn-on for electroluminescence is one of the most discussed, but often misinterpreted, phenomena for solution-processed quantum-dot light-emitting diodes. Here, multiple techniques are applied to show that the phenomenon can be readily explained using the fundamental rules of carrier injection and transport. Evident from temperature dependent photovoltage measurements, it is found that the energy up-conversion originating from the decay of charge transfer excitons is not responsible for the subthreshold turn-on. Further analysis using electroabsorption reveals that the turn-on voltage of electroluminescence consistently correlates with the flat-band voltage of the emission layer. Under such subthreshold bias, although the device current is still limited by the depleted hole-transporting layer, field-assisted carrier injection starts to provide enough electrons and holes for detectable radiative recombination, thereby enabling distinct subthreshold turn-on.

Electrochemically triggered upconverted luminescence for light-emitting devices

Electrochemically triggered upconverted luminescence through triplet–triplet energy transfer (TTET) and subsequent triplet–triplet annihilation upconversion (TTA-UC) is observed for the first time.