High performance III-V photoelectrodes for solar water splitting via synergistically tailored structure and stoichiometry

Chemistry of Materials Underpinning Photoelectrochemical Solar Fuel Production

Since its inception, photoelectrochemistry has sought to power the generation of fuels, particularly hydrogen, using energy from sunlight. Efficient and durable photoelectrodes, however, remain elusive. Here we review the current state of the art, focusing our discussion on advances in photoelectrodes made in the past decade. We open by briefly discussing fundamental photoelectrochemical concepts and implications for photoelectrode function. We next review a broad range of semiconductor photoelectrodes broken down by material class (oxides, nitrides, chalcogenides, and mature photovoltaic semiconductors), identifying intrinsic properties and discussing their influence on performance. We then identify innovative in situ and operando techniques to directly probe the photoelectrode|electrolyte interface, enabling direct assessment of structure-property relationships for catalytic surfaces in active reaction environments. We close by considering more complex photoelectrochemical fuel-forming reactions (carbon dioxide and nitrogen reduction, as well as alternative oxidation reactions), where product selectivity imposes additional criteria on electrochemical driving force and photoelectrode architecture. By contextualizing recent literature within a fundamental framework, we seek to provide direction for continued progress toward achieving efficient and stable fuel-forming photoelectrodes.

Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces

To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose. The band alignment between such a protection layer and the III-V semiconductor should be aligned to minimize corrosion and nonradiative interfacial recombination and to promote selective charge carrier transport. Here, we investigate the band alignment between GaN passivation layers and n-type doped GaInP(100) photoabsorbers and grew n-type GaInP(100) epitaxially by metalorganic vapor phase epitaxy on oxidized GaAs(100) substrates to mimic a realistic preparation sequence. We prepared 1-20 nm GaN films on top employing atomic layer deposition and studied the band alignment at the GaN/GaInP(100) heterointerface by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of measurements, in which we increased the thickness of the GaN films successively. The n-GaInP(100) surfaces, prepared with a well-known phosphorus-terminated p(2 × 2)/c(4 × 2) reconstruction, show an upward surface band bending (BB) of 0.38 eV and a Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated, resulting in a reduction of the BB to 0.16 eV and a valence band offset (VBO) between the GaInP(100) and the thin oxide layer of 2.01 eV. Applying Kraut's approach, we identified a VBO of 1.90 eV and a conduction band offset of 0.44 eV between GaInP(100) with a thin oxide layer and the GaN passivation layer. We conclude that the GaN is a well-suited passivation layer for PEC cells and facilitates selective transport of photogenerated electrons.

AlGaAs as an Alternative Solar Water Splitting Material: Insights into Performance, Stability, and Future Directions

This study offers an in-depth examination of aluminum gallium arsenide (AlGaAs) as a high-performance and durable material for photoelectrochemical water splitting, a key method of cost-effective renewable hydrogen production. Purpose-designed pin-AlGaAs photocathodes are demonstrated to yield a remarkable photocurrent density of over 15 mA/cm2 and an impressive onset potential of 1.11 V vs RHE. These results significantly outperform those achieved with other materials, marking a considerable advancement in the field. Moreover, this work addresses the long-standing issue of AlGaAs corrosion in an aqueous electrolyte. An innovative approach using a 60 nm TiO2 protection layer is introduced, providing substantial corrosion resistance in acidic environments and thereby enhancing material durability. This research also provides valuable insights into the role of passivation layers on charge transfer. It was found that an n-GaAs passivation layer further enhances the onset potential, whereas an n-InGaP layer contributes to a decline in the overall performance. These findings pave the way for new applications of AlGaAs in solar water splitting technology, offering a promising pathway toward the development of efficient AlGaAs/Si tandem water splitting devices.

Anodic Reconstructed p+-GaAs/a-InAsN for Stable and Efficient Photoelectrochemical Hydrogen Evolution

The extremely poor solution stability and massive carrier recombination have seriously prevented III-V semiconductor nanomaterials from efficient and stable hydrogen production. In this work, an anodic reconstruction strategy based on group III-V active semiconductors is proposed for the first time, resulting in 19-times photo-gain. What matters most is that the device after anodic reconstruction shows very superior stability under the protracted photoelectrochemical (PEC) test over 8100 s, while the final photocurrent density does not decrease but rather increases by 63.15%. Using the experiment and DFT theoretical calculation, the anodic reconstruction mechanism is elucidated: through the oxidation of indium clusters and the migration of arsenic atoms, the reconstruction formed p+-GaAs/a-InAsN. The hole concentration of the former is increased by 10 times (5.64 × 1018 cm-1 increases up to 5.95 × 1019 cm-1) and the band gap of the latter one is reduced to a semi-metallic state, greatly strengthening the driving force of PEC water splitting. This work turns waste into treasure, transferring the solution instability into better efficiency.

Enhanced solar-driven photoelectrochemical water splitting using nanoflower Au/CuO/GaN hybrid photoanodes

Harnessing solar energy for large-scale hydrogen fuel (H2) production shows promise in addressing the energy crisis and ecological degradation. This study focuses on the development of GaN-based photoelectrodes for efficient photoelectrochemical (PEC) water splitting, enabling environmentally friendly H2 production. Herein, a novel nanoflower Au/CuO/GaN hybrid structure was successfully synthesized using a combination of methods including successive ionic layer adsorption and reaction (SILAR), RF/DC sputtering, and metal-organic chemical vapour deposition (MOCVD) techniques. Structural, morphological, and optical characteristics and elemental composition of the prepared samples were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectroscopy, and energy-dispersive X-ray (EDX) spectroscopy, respectively. PEC and electrochemical impedance measurements were performed for all samples. The nanoflower Au/CuO/GaN hybrid structure exhibited the highest photocurrent density of ∼4 mA cm-2 at 1.5 V vs. RHE in a Na2SO4 electrolyte with recorded moles of H2 of about 3246 μmol h-1 cm-2. By combining these three materials in a unique structure, we achieved improved performance in the conversion of solar energy into chemical energy. The nanoflower structure provides a large surface area and promotes light absorption while the Au, CuO, and GaN components contribute to efficient charge separation and transfer. This study presents a promising strategy for advancing sustainable H2 production via efficient solar-driven water splitting.

Metal-free photoanodes for C-H functionalization

Organic semiconductors, such as carbon nitride, when employed as powders, show attractive photocatalytic properties, but their photoelectrochemical performance suffers from low charge transport capability, charge carrier recombination, and self-oxidation. High film-substrate affinity and well-designed heterojunction structures may address these issues, achieved through advanced film generation techniques. Here, we introduce a spin coating pretreatment of a conductive substrate with a multipurpose polymer and a supramolecular precursor, followed by chemical vapor deposition for the synthesis of dual-layer carbon nitride photoelectrodes. These photoelectrodes are composed of a porous microtubular top layer and an interlayer between the porous film and the conductive substrate. The polymer improves the polymerization degree of carbon nitride and introduces C-C bonds to increase its electrical conductivity. These carbon nitride photoelectrodes exhibit state-of-the-art photoelectrochemical performance and achieve high yield in C-H functionalization. This carbon nitride photoelectrode synthesis strategy may be readily adapted to other reported processes to optimize their performance.

Photocatalysis screening for group III-V vdW heterostructures constructed by MX (M = Ga, In and X = P, As) monolayers

To harvest solar energy for water splitting and produce pollution-free hydrogen and oxygen, high-performance photocatalysts are essential. Here, by combining different two-dimensional (2D) group III-V MX (M = Ga, In and X = P, As) monolayers, we designed 144 van der Waals (vdW) heterostructures to identify efficient photoelectrochemical materials. Using first-principles calculations, we investigated the stabilities, electronic properties, and optical properties of these heterostructures. After a careful screening process, we elected GaP/InP in a BB-II stacking configuration as the most promising candidate. This specific GaP/InP configuration has a type-II band alignment with a gap value of 1.83 eV. The conduction band minimum (CBM) is located at -4.276 eV, and the valence band maximum (VBM) is located at -6.217 eV, fully satisfying the requirements of the catalytic reaction under pH = 0. Additionally, light absorption has been improved through the construction of the vdW heterostructure. These results could help in understanding the properties of the III-V heterostructures and guide the experimental synthesis of these materials for photocatalysis applications.

Stability of Photocathodes: A Review on Principles, Design, and Strategies

Photoelectrochemical devices based on semiconductor photoelectrode can directly convert and store solar energy into chemical fuels. Although the efficient photoelectrodes with commercially valuable solar-to-fuel energy conversion efficiency have been reported over past decades, one of the most enormous challenges is the stability of the photoelectrode due to corrosion during operation. Thus, it is of paramount importance for developing a stable photoelectrode to deploy solar-fuel production. This Review commences with a fundamental understanding of thermodynamics for photoelectrochemical reactions and the fundamentals of photocathodes. Then, the commercial application of photoelectrochemical technology is prospected. We specifically focus on recent strategies for designing photocathodes with long-term stability, including energy band alignment, hole transport/storage/blocking layer, spatial decoupling, grafting molecular catalysts, protective/passivation layer, surface element reconstruction, and solvent effects. Based on the insights gained from these effective strategies, we propose an outlook of key aspects that address the challenges for development of stable photoelectrodes in future work.

Oxynitrides enabled photoelectrochemical water splitting with over 3,000 hrs stable operation in practical two-electrode configuration

Solar photoelectrochemical reactions have been considered one of the most promising paths for sustainable energy production. To date, however, there has been no demonstration of semiconductor photoelectrodes with long-term stable operation in a two-electrode configuration, which is required for any practical application. Herein, we demonstrate the stable operation of a photocathode comprising Si and GaN, the two most produced semiconductors in the world, for 3,000 hrs without any performance degradation in two-electrode configurations. Measurements in both three- and two-electrode configurations suggest that surfaces of the GaN nanowires on Si photocathode transform in situ into Ga-O-N that drastically enhances hydrogen evolution and remains stable for 3,000 hrs. First principles calculations further revealed that the in-situ Ga-O-N species exhibit atomic-scale surface metallization. This study overcomes the conventional dilemma between efficiency and stability imposed by extrinsic cocatalysts, offering a path for practical application of photoelectrochemical devices and systems for clean energy.

Siloxane Hybrid Material-Encapsulated Highly Robust Flexible μLEDs for Biocompatible Lighting Applications

Flexible micro-light-emitting diodes (f-μLEDs) have been regarded as an attractive light source for the next-generation human-machine interfaces, thanks to their noticeable optoelectronic performances. However, when it comes to their practical utilizations fulfilling industrial standards, there have been unsolved reliability and durability issues of the f-μLEDs, despite previous developments in the high-performance f-μLEDs for various applications. Herein, highly robust flexible μLEDs (f-HμLEDs) with 20 × 20 arrays, which are realized by a siloxane-based organic-inorganic hybrid material (SHM), are reported. The f-HμLEDs are created by combining the f-μLED fabrication process with SHM synthesis procedures (i.e., sol-gel reaction and successive photocuring). The outstanding mechanical, thermal, and environmental stabilities of our f-HμLEDs are confirmed by a host of experimental and theoretical examinations, including a bending fatigue test (10⁵ bending/unbending cycles), a lifetime accelerated stress test (85 °C and 85% relative humidity), and finite element method simulations. Eventually, to demonstrate the potential of our f-HμLEDs for practical applications of flexible displays and/or biomedical devices, their white light emission due to quantum dot-based color conversion of blue light emitted by GaN-based f-HμLEDs is demonstrated, and the biocompatibility of our f-HμLEDs is confirmed via cytotoxicity and cell proliferation tests with muscle, bone, and neuron cell lines. As far as we can tell, this work is the first demonstration of the flexible μLED encapsulation platform based on the SHM, which proved its mechanical, thermal, and environmental stabilities and biocompatibility, enabling us to envisage biomedical and/or flexible display applications using our f-HμLEDs.

Understanding the Stability of Etched or Platinized p-GaInP Photocathodes for Solar-Driven H2 Evolution

The long-term stability in acidic or alkaline aqueous electrolytes of p-Ga_0.52In_0.48P photocathodes, with a band gap of ∼1.8 eV, for the solar-driven hydrogen-evolution reaction (HER) has been evaluated from a thermodynamic, kinetic, and mechanistic perspective. At either pH 0 or pH 14, etched p-GaInP electrodes corroded cathodically under illumination and formed metallic In⁰ on the photoelectrode surface. In contrast, under the same conditions, electrodeposition of Pt facilitated the HER kinetics and stabilized p-GaInP/Pt photoelectrodes against such cathodic decomposition. When held at 0 V versus the reversible hydrogen electrode, p-GaInP/Pt electrodes in either pH = 0 or pH = 14 exhibited stable current densities (J) of ∼-9 mA cm^-2 for hundreds of hours under simulated 1 sun illumination. During the stability tests, the current density-potential (J-E) characteristics of the p-GaInP/Pt photoelectrodes degraded due to pH-dependent changes in the surface chemistry of the photocathode. This work provides a fundamental understanding of the stability and corrosion mechanisms of p-GaInP photocathodes that constitute a promising top light absorber for tandem solar-fuel generators.

Pressure effects on the metallization and dielectric properties of GaP

In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions. The resulting InP NW photocathodes exhibit an excellent photocurrent density of 33 mA/cm² under 1 sun illumination in 1 M HCl with a highly stabilized performance without needing additional protection layers. Our approach combining large-area NW fabrication and surface engineering synergistically enhances light harvesting and PEC performance and stability, thereby providing a pathway for the development of efficient and durable InP photoelectrodes in a scalable manner.

Development of a photoelectrochemically self-improving Si/GaN photocathode for efficient and durable H2 production

Development of an efficient yet durable photoelectrode is of paramount importance for deployment of solar-fuel production. Here, we report the photoelectrochemically self-improving behaviour of a silicon/gallium nitride photocathode active for hydrogen production with a Faradaic efficiency approaching ~100%. By using a correlative approach based on different spectroscopic and microscopic techniques, as well as density functional theory calculations, we provide a mechanistic understanding of the chemical transformation that is the origin of the self-improving behaviour. A thin layer of gallium oxynitride forms on the side walls of the gallium nitride grains, via a partial oxygen substitution at nitrogen sites, and displays a higher density of catalytic sites for the hydrogen-evolving reaction. This work demonstrates that the chemical transformation of gallium nitride into gallium oxynitride leads to sustained operation and enhanced catalytic activity, thus showing promise for oxynitride layers as protective catalytic coatings for hydrogen evolution.

Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p⁺n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm² under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm² is maintained at 1.3 V versus RHE for 7 days.

Authors demonstrate Si-based MIS photoanodes using Al thin-film reactions to create localized conduction paths through the insulator and Ni electrodeposition to form metal catalyst islands. These approaches yielded low onset potential, high saturation current density, and excellent stability.

Stable Unbiased Photo-Electrochemical Overall Water Splitting Exceeding 3% Efficiency via Covalent Triazine Framework/Metal Oxide Hybrid Photoelectrodes

Photo-electrochemical (PEC) water splitting systems using oxide-based photoelectrodes are highly attractive for solar-to-chemical energy conversion. However, despite decades-long efforts, it is still challenging to develop efficient and stable photoelectrodes for practical applications. Here, thin layers of covalent triazine frameworks (CTF-BTh) containing a bithiophene moiety are conformably deposited onto the surfaces of a Cu₂ O photocathode and a Mo-doped BiVO₄ photoanode via electropolymerization to construct new hybrid photoelectrodes, successfully addressing the efficiency and stability issues. The CTF-BTh possesses a suitable band structure to form favorable band edge alignment with each metal oxide, creating a p-n junction and a staggered type-II heterojunction with Cu₂ O and Mo-doped BiVO₄ , respectively. Thus, the as-fabricated hybrid photoelectrodes exhibit substantially increased PEC performances. Meanwhile, the CTF-BTh film also serves as an effective corrosion-resistant overlayer for both photoelectrodes to inhibit photocorrosion and enable long-term operation for 150 h with only ≈10% loss in photocurrent densities. Furthermore, a stand-alone unbiased PEC tandem device comprising CTF-BTh-coated photoelectrodes exhibits 3.70% solar-to-hydrogen conversion efficiency. Even after continuous operation for 120 h, the efficiency can still retain at 3.24%.

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Growth of high-quality III-V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III-V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III-V nanowire growth studies provide an excellent example to guide the nanowire growth.

Nanostructured metal phosphides: from controllable synthesis to sustainable catalysis

Metal phosphides (MPs) with unique and desirable physicochemical properties provide promising potential in practical applications, such as the catalysis, gas/humidity sensor, environmental remediation, and energy storage fields, especially for transition metal phosphides (TMPs) and MPs consisting of group IIIA and IVA metal elements. Most studies, however, on the synthesis of MP nanomaterials still face intractable challenges, encompassing the need for a more thorough understanding of the growth mechanism, strategies for large-scale synthesis of targeted high-quality MPs, and practical achievement of functional applications. This review aims at providing a comprehensive update on the controllable synthetic strategies for MPs from various metal sources. Additionally, different passivation strategies for engineering the structural and electronic properties of MP nanostructures are scrutinized. Then, we showcase the implementable applications of MP-based materials in emerging sustainable catalytic fields including electrocatalysis, photocatalysis, mild thermocatalysis, and related hybrid systems. Finally, we offer a rational perspective on future opportunities and remaining challenges for the development of MPs in the materials science and sustainable catalysis fields.

Recent Advances in the Design of Plasmonic Au/TiO2 Nanostructures for Enhanced Photocatalytic Water Splitting

Plasmonic nanostructures have played a key role in extending the activity of photocatalysts to the visible light spectrum, preventing the electron-hole combination and providing with hot electrons to the photocatalysts, a crucial step towards efficient broadband photocatalysis. One plasmonic photocatalyst, Au/TiO2, is of a particular interest because it combines chemical stability, suitable electronic structure, and photoactivity for a wide range of catalytic reactions such as water splitting. In this review, we describe key mechanisms involving plasmonics to enhance photocatalytic properties leading to efficient water splitting such as production and transport of hot electrons through advanced analytical techniques used to probe the photoactivity of plasmonics in engineered Au/TiO2 devices. This work also discusses the emerging strategies to better design plasmonic photocatalysts and understand the underlying mechanisms behind the enhanced photoactivity of plasmon-assisted catalysts.