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Wang H, Ning M, Wang Q, Liang Y, Li S, Li Z, Wang L, Wang Y, Jiang L. High-performance ultraviolet detector based on self-assembled 3D/2D perovskite heterostructure. RSC Adv 2024; 14:27323-27331. [PMID: 39193308 PMCID: PMC11349043 DOI: 10.1039/d4ra05576d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2024] [Accepted: 08/23/2024] [Indexed: 08/29/2024] Open
Abstract
Heterogeneous assembly of metal halide perovskites (MHPs) structures offers convenience for promoting the interfacial properties of perovskite heterojunctions, which have been widely used in the new generation of photoelectric devices. In this study, three-dimensional (3D) CsPbBr3 quantum dots (CPB QDs) were epitaxially grown on two-dimensional (2D) (BA)2PbBr4 nanoplates (BPB NPs) via self-assembly in a toluene mixing solution. The morphological, structural, and optical properties of the synthesized structure reveal that a highly-qualified interface and coherence were formed between the two different perovskites. These heterostructures (HSs) facilitate the separation and transportation of electrons and holes in opposite directions. Based on this property, a high-performance ultraviolet light detector was fabricated by depositing a layer of CPB@BPB film on a textured silicon (T-Si) substrate. The prepared CPB@BPB/T-Si detector has shown enhanced properties i.e. quick response time, high responsivity (6.9 A W-1), high detection rate (3.17 × 109 jones), and low detection limit (0.24 μW cm-2). This enhanced performance could be attributed to the large light-absorbing area, effective carrier transport channels in BPB NPs, and improved interfacial properties of the CPB@BPB HS.
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Affiliation(s)
- Haiyan Wang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Mengxin Ning
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Qiaohe Wang
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Yachuan Liang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Sen Li
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Zijiong Li
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Lingli Wang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Yan Wang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
| | - Liying Jiang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
- School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China
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Zhu Z, Zhu C, Yang L, Chen Q, Zhang L, Dai J, Cao J, Zeng S, Wang Z, Wang Z, Zhang W, Bao J, Yang L, Yang Y, Chen B, Yin C, Chen H, Cao Y, Gu H, Yan J, Wang N, Xing G, Li H, Wang X, Li S, Liu Z, Zhang H, Wang L, Huang X, Huang W. Room-temperature epitaxial welding of 3D and 2D perovskites. NATURE MATERIALS 2022; 21:1042-1049. [PMID: 35879439 DOI: 10.1038/s41563-022-01311-4] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2021] [Accepted: 06/10/2022] [Indexed: 06/15/2023]
Abstract
Formation of epitaxial heterostructures via post-growth self-assembly is important in the design and preparation of functional hybrid systems combining unique properties of the constituents. This is particularly attractive for the construction of metal halide perovskite heterostructures, since their conventional solution synthesis usually leads to non-uniformity in composition, crystal phase and dimensionality. Herein, we demonstrate that a series of two-dimensional and three-dimensional perovskites of different composition and crystal phase can form epitaxial heterostructures through a ligand-assisted welding process at room temperature. Using the CsPbBr3/PEA2PbBr4 heterostructure as a demonstration, in addition to the effective charge and energy transfer across the epitaxial interface, localized lattice strain was observed at the interface, which was extended to the top layer of the two-dimensional perovskite, leading to multiple new sub-bandgap emissions at low temperature. Given the versatility of our strategy, unlimited hybrid systems are anticipated, yielding composition-, interface- and/or orientation-dependent properties.
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Affiliation(s)
- Zhaohua Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Lei Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jie Dai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, China
| | - Shaoyu Zeng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zeyi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Zhiwei Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Wei Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jusheng Bao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lijuan Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yang Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Chunyang Yin
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hong Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yang Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Hao Gu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, People's Republic of China
| | - Jiaxu Yan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, People's Republic of China
| | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shaozhou Li
- Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore, Singapore
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, China.
- Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing, China.
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Pandres EP, Crane MJ, Davis EJ, Pauzauskie PJ, Holmberg VC. Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals. ACS NANO 2021; 15:8653-8662. [PMID: 33950682 DOI: 10.1021/acsnano.1c00683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Semiconductor nanowire production through vapor- and solution-based processes has propelled nanowire systems toward a wide range of technological applications. Although vapor-based nanowire syntheses enable precise control over nanowire composition and phase, they typically employ batch processes with specialized pressure management systems, limiting throughput. Solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive nanowire growth photothermally. Laser irradiation of a solution containing metal nanocrystals and semiconductor precursors facilitates rapid heating, precursor decomposition, and nanowire growth on a benchtop in simple glassware under standard conditions, potentially enabling a range of solution-based experiments including in-line combinatorial identification of optimized reaction parameters, in situ measurements, and the production of nanowires with complex compositions.
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Affiliation(s)
- Elena P Pandres
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, United States
| | - Matthew J Crane
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, United States
| | - E James Davis
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, United States
| | - Peter J Pauzauskie
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195-2120, United States
- Molecular Engineering & Sciences Institute, University of Washington, Seattle, Washington 98195-1652, United States
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Vincent C Holmberg
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, United States
- Molecular Engineering & Sciences Institute, University of Washington, Seattle, Washington 98195-1652, United States
- Clean Energy Institute, University of Washington, Seattle, Washington 98195-1653, United States
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Ding H, Kollipara PS, Lin L, Zheng Y. Atomistic modeling and rational design of optothermal tweezers for targeted applications. NANO RESEARCH 2021; 14:295-303. [PMID: 35475031 PMCID: PMC9037963 DOI: 10.1007/s12274-020-3087-z] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Revised: 08/22/2020] [Accepted: 09/03/2020] [Indexed: 05/26/2023]
Abstract
Optical manipulation of micro/nanoscale objects is of importance in life sciences, colloidal science, and nanotechnology. Optothermal tweezers exhibit superior manipulation capability at low optical intensity. However, our implicit understanding of the working mechanism has limited the further applications and innovations of optothermal tweezers. Herein, we present an atomistic view of opto-thermo-electro-mechanic coupling in optothermal tweezers, which enables us to rationally design the tweezers for optimum performance in targeted applications. Specifically, we have revealed that the non-uniform temperature distribution induces water polarization and charge separation, which creates the thermoelectric field dominating the optothermal trapping. We further design experiments to systematically verify our atomistic simulations. Guided by our new model, we develop new types of optothermal tweezers of high performance using low-concentrated electrolytes. Moreover, we demonstrate the use of new tweezers in opto-thermophoretic separation of colloidal particles of the same size based on the difference in their surface charge, which has been challenging for conventional optical tweezers. With the atomistic understanding that enables the performance optimization and function expansion, optothermal tweezers will further their impacts.
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Affiliation(s)
- Hongru Ding
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, USA
| | | | - Linhan Lin
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Yuebing Zheng
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, USA
- Materials Science & Engineering Program and Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA
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Shen B, Huang L, Shen J, Meng L, Kluender EJ, Wolverton C, Tian B, Mirkin CA. Synthesis of Metal-Capped Semiconductor Nanowires from Heterodimer Nanoparticle Catalysts. J Am Chem Soc 2020; 142:18324-18329. [PMID: 33078944 DOI: 10.1021/jacs.0c09222] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Semiconductor nanowires (NWs) capped with metal nanoparticles (NPs) show multifunctional and synergistic properties, which are important for applications in the fields of catalysis, photonics, and electronics. Conventional colloidal syntheses of this class of hybrid structures require complex sequential seeded growth, where each section requires its own set of growth conditions, and methods for preparing such wires are not universal. Here, we report a new and general method for synthesizing metal-semiconductor nanohybrids based on particle catalysts, prepared by scanning probe block copolymer lithography, and chemical vapor deposition. In this process, metallic heterodimer NPs were used as catalysts for NW growth to form semiconductor NWs capped with metallic particles (Au, Ag, Co, Ni). Interestingly, the growth processes for NWs on NPs are regioselective and controlled by the chemical composition of the metallic heterodimer used. Using a systematic experimental approach, paired with density functional theory calculations, we were able to postulate three different growth modes, one without precedent.
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