1
|
Yadav A, Ahmad S. Single Crystal Ruddlesden-Popper and Dion-Jacobson Metal Halide Perovskites for Visible Light Photodetectors: Present Status and Future Perspectives. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43134-43155. [PMID: 39116407 DOI: 10.1021/acsami.4c07170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2024]
Abstract
2D metal halide perovskites (MHPs), mainly the studied Ruddlesden-Popper (RP) and Dion-Jacobson (DJ) phases, have gained enormous popularity as optoelectronic materials owing to their self-assembled multiple quantum well structures, tunable semiconducting properties, and improved structural stability compared to their bulk 3D counterparts. The performance of polycrystalline thin film devices is limited due to the formation of defects and trap states. However, as studied so far, single crystal-based devices can provide a better platform to improve device performance and investigate their fundamental properties more reliably. This Review provides the first comprehensive report on the emerging field of RP and DJ perovskite single crystals and their use in visible light photodetectors of varied device configurations. This Review structurally summarizes the 2D MHP single crystal growth methods and the parameters that control the crystal growth process. In addition, the characterization techniques used to investigate their crystal properties are discussed. The review further provides detailed insights into the working mechanisms as well as the operational performance of 2D MHP single crystal photodetector devices. In the end, to outline the present status and future directions, this Review provides a forward-looking perspective concerning the technical challenges and bottlenecks associated with the developing field of RP and DJ perovskite single crystals. Therefore, this timely review will provide a detailed overview of the fast-growing field of 2D MHP single crystal-based photodetectors as well as ignite new concepts for a wide range of applications including solar cells, photocatalysts, solar H2 production, neuromorphic bioelectronics, memory devices, etc.
Collapse
Affiliation(s)
- Abhishek Yadav
- Advanced Energy Materials Lab, Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan 342037, India
| | - Shahab Ahmad
- Advanced Energy Materials Lab, Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan 342037, India
| |
Collapse
|
2
|
Lee MH, Kim DW, Noh YW, Kim HS, Han J, Lee H, Choi KJ, Cho S, Song MH. Controlled Crystal Growth of All-Inorganic CsPbI 2Br via Sequential Vacuum Deposition for Efficient Perovskite Solar Cells. ACS NANO 2024; 18:17764-17773. [PMID: 38935840 DOI: 10.1021/acsnano.4c03079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Vacuum deposition of perovskites is a promising method for scale-up fabrication and uniform film growth. However, improvements in the photovoltaic performance of perovskites are limited by the fabrication of perovskite films, which are not optimized for high device efficiency in the vacuum evaporation process. Herein, we fabricate CsPbI2Br perovskite with high crystallinity and larger grain size by controlling the deposition sequence between PbI2 and CsBr. The nucleation barrier for perovskite formation is significantly lowered by first evaporating CsBr and then PbI2 (CsBr-PbI2), followed by the sequential evaporation of multiple layers. The results show that the reduced Gibbs free energy of CsBr-PbI2, compared with that of PbI2-CsBr, accelerates perovskite formation, resulting in larger grain size and reduced defect density. Furthermore, surface-modified homojunction perovskites are fabricated to efficiently extract charge carriers and enhance the efficiency of perovskite solar cells (PeSCs) by modulating the final PbI2 thickness before thermal annealing. Using these strategies, the best PeSC exhibits a power conversion efficiency of 13.41% for a small area (0.135 cm2), the highest value among sequential thermal deposition inorganic PeSCs, and 11.10% for a large area PeSC (1 cm2). This study presents an effective way to understand the crystal growth of thermally deposited perovskites and improve their performance in optoelectronic devices.
Collapse
Affiliation(s)
- Min Hyeong Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae Woo Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young Wook Noh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hye Seung Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jongmin Han
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Heunjeong Lee
- Department of semiconductor physics and energy harvest storage research center, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Kyoung Jin Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Shinuk Cho
- Department of semiconductor physics and energy harvest storage research center, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Myoung Hoon Song
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| |
Collapse
|
3
|
Wan Z, Chen Z, Shi L, Zheng A, Min J, Shen C, Du B, Guo Y, Gao X, Yin J, Ge H, Niu S, Lu H, Yin K, Wu D, Liu Z, Xia Y. Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon. ACS NANO 2024; 18:15096-15106. [PMID: 38810232 DOI: 10.1021/acsnano.4c02336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.
Collapse
Affiliation(s)
- Zuteng Wan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S3E4, Canada
| | - Lei Shi
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Anqi Zheng
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Jin Min
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cong Shen
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bingfeng Du
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanhua Guo
- College of Materials Science and Engineering, Tech Institute for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
| | - Jiang Yin
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haixiong Ge
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shanyuan Niu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haiming Lu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Di Wu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiguo Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yidong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| |
Collapse
|
4
|
Zhong J, Zhou D, Bai Q, Liu C, Fan X, Zhang H, Li C, Jiang R, Zhao P, Yuan J, Li X, Zhan G, Yang H, Liu J, Song X, Zhang J, Huang X, Zhu C, Zhu C, Wang L. Growth of millimeter-sized 2D metal iodide crystals induced by ion-specific preference at water-air interfaces. Nat Commun 2024; 15:3185. [PMID: 38609368 PMCID: PMC11014996 DOI: 10.1038/s41467-024-47241-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Accepted: 03/25/2024] [Indexed: 04/14/2024] Open
Abstract
Conventional liquid-phase methods lack precise control in synthesizing and processing materials with macroscopic sizes and atomic thicknesses. Water interfaces are ubiquitous and unique in catalyzing many chemical reactions. However, investigations on two-dimensional (2D) materials related to water interfaces remain limited. Here we report the growth of millimeter-sized 2D PbI2 single crystals at the water-air interface. The growth mechanism is based on an inherent ion-specific preference, i.e. iodine and lead ions tend to remain at the water-air interface and in bulk water, respectively. The spontaneous accumulation and in-plane arrangement within the 2D crystal of iodide ions at the water-air interface leads to the unique crystallization of PbI2 as well as other metal iodides. In particular, PbI2 crystals can be customized to specific thicknesses and further transformed into millimeter-sized mono- to few-layer perovskites. Additionally, we have developed water-based techniques, including water-soaking, spin-coating, water-etching, and water-flow-assisted transfer to recycle, thin, pattern, and position PbI2, and subsequently, perovskites. Our water-interface mediated synthesis and processing methods represents a significant advancement in achieving simple, cost-effective, and energy-efficient production of functional materials and their integrated devices.
Collapse
Affiliation(s)
- Jingxian Zhong
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Qi Bai
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Xinlian Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Hehe Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Congzhou Li
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Ran Jiang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xiaojiao Li
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Hongyu Yang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Junran Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xiao Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Chongqin Zhu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China.
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China.
| |
Collapse
|
5
|
Liu C, Pan J, Yuan Q, Zhu C, Liu J, Ge F, Zhu J, Xie H, Zhou D, Zhang Z, Zhao P, Tian B, Huang W, Wang L. Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305580. [PMID: 37882079 DOI: 10.1002/adma.202305580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Revised: 10/11/2023] [Indexed: 10/27/2023]
Abstract
Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.
Collapse
Affiliation(s)
- Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jie Pan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Qihui Yuan
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jijie Zhu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Haitao Xie
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicheng Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wei Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Key Laboratory of Flexible Electronics (KLOFE), Shaanxi Institute of Flexible Electronics (SIFE), Institute of Flexible Electronics (IFE), North-Western Polytechnical University (NPU), Xi'an, 710072, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong, 518107, China
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| |
Collapse
|
6
|
Tang J, Ge F, Chen J, Zhou D, Zhan G, Liu J, Yuan J, Shi X, Zhao P, Fan X, Su Y, Liu Z, He J, Tang J, Zha C, Zhang L, Song X, Wang L. A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301573. [PMID: 37365697 DOI: 10.1002/smll.202301573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 05/28/2023] [Indexed: 06/28/2023]
Abstract
2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3 , SbI3 ), divalent (SnI2 , GeI2 ), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3 /WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3 . The work opens a new pathway for 2D metal halides toward widespread investigation and applications.
Collapse
Affiliation(s)
- Jin Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jinlian Chen
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinlin Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Yu Su
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicong Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiahao He
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaqi Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chenyang Zha
- Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078, China
| | - Linghai Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| |
Collapse
|
7
|
Fiedler C, Kleinhanns T, Garcia M, Lee S, Calcabrini M, Ibáñez M. Solution-Processed Inorganic Thermoelectric Materials: Opportunities and Challenges. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2022; 34:8471-8489. [PMID: 36248227 PMCID: PMC9558429 DOI: 10.1021/acs.chemmater.2c01967] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Revised: 09/05/2022] [Indexed: 05/25/2023]
Abstract
Thermoelectric technology requires synthesizing complex materials where not only the crystal structure but also other structural features such as defects, grain size and orientation, and interfaces must be controlled. To date, conventional solid-state techniques are unable to provide this level of control. Herein, we present a synthetic approach in which dense inorganic thermoelectric materials are produced by the consolidation of well-defined nanoparticle powders. The idea is that controlling the characteristics of the powder allows the chemical transformations that take place during consolidation to be guided, ultimately yielding inorganic solids with targeted features. Different from conventional methods, syntheses in solution can produce particles with unprecedented control over their size, shape, crystal structure, composition, and surface chemistry. However, to date, most works have focused only on the low-cost benefits of this strategy. In this perspective, we first cover the opportunities that solution processing of the powder offers, emphasizing the potential structural features that can be controlled by precisely engineering the inorganic core of the particle, the surface, and the organization of the particles before consolidation. We then discuss the challenges of this synthetic approach and more practical matters related to solution processing. Finally, we suggest some good practices for adequate knowledge transfer and improving reproducibility among different laboratories.
Collapse
Affiliation(s)
- Christine Fiedler
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Tobias Kleinhanns
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Maria Garcia
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Seungho Lee
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Mariano Calcabrini
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Maria Ibáñez
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| |
Collapse
|
8
|
Mustonen K, Hofer C, Kotrusz P, Markevich A, Hulman M, Mangler C, Susi T, Pennycook TJ, Hricovini K, Richter C, Meyer JC, Kotakoski J, Skákalová V. Toward Exotic Layered Materials: 2D Cuprous Iodide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106922. [PMID: 34877720 DOI: 10.1002/adma.202106922] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Revised: 11/30/2021] [Indexed: 06/13/2023]
Abstract
Heterostructures composed of 2D materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials were increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist at other temperatures and pressures. This work demonstrates how such structures can be stabilized in 2D van der Waals (vdw) stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K, is produced. The results establish a simple route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient.
Collapse
Affiliation(s)
- Kimmo Mustonen
- Faculty of Physics, University of Vienna, Vienna, 1090, Austria
| | - Christoph Hofer
- Eberhard Karls University of Tuebingen, Institute for Applied Physics, 72076, Tuebingen, Germany
- NMI Natural and Medical Sciences Institute at the University of Tuebingen, Markwiesenstr. 55, D-72770, Reutlingen, Germany
- University of Antwerp, EMAT, Antwerp, 2020, Belgium
| | - Peter Kotrusz
- Danubia NanoTech s.r.o., Bratislava, Slovakia
- Institute of Electrical Engineering, SAS, Bratislava, Slovakia
| | | | - Martin Hulman
- Danubia NanoTech s.r.o., Bratislava, Slovakia
- Institute of Electrical Engineering, SAS, Bratislava, Slovakia
| | - Clemens Mangler
- Faculty of Physics, University of Vienna, Vienna, 1090, Austria
| | - Toma Susi
- Faculty of Physics, University of Vienna, Vienna, 1090, Austria
| | | | - Karol Hricovini
- Université Paris-Saclay, CEA, CNRS, LIDYL, Gif-sur-Yvette, 91191, France
- Laboratoire de Physique des Matériaux et Surfaces, CY Cergy Paris Université, Cergy-Pontoise, 95 031, France
| | - Christine Richter
- Université Paris-Saclay, CEA, CNRS, LIDYL, Gif-sur-Yvette, 91191, France
- Laboratoire de Physique des Matériaux et Surfaces, CY Cergy Paris Université, Cergy-Pontoise, 95 031, France
| | - Jannik C Meyer
- Eberhard Karls University of Tuebingen, Institute for Applied Physics, 72076, Tuebingen, Germany
- NMI Natural and Medical Sciences Institute at the University of Tuebingen, Markwiesenstr. 55, D-72770, Reutlingen, Germany
| | - Jani Kotakoski
- Faculty of Physics, University of Vienna, Vienna, 1090, Austria
| | - Viera Skákalová
- Faculty of Physics, University of Vienna, Vienna, 1090, Austria
- Danubia NanoTech s.r.o., Bratislava, Slovakia
- Institute of Electrical Engineering, SAS, Bratislava, Slovakia
| |
Collapse
|
9
|
Yan J, Ou Q, Vincenti MA, De Angelis C, Bao Q, Neshev DN. Nonlinear microscopy of lead iodide nanosheets. OPTICS EXPRESS 2022; 30:4793-4805. [PMID: 35209453 DOI: 10.1364/oe.451214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 01/17/2022] [Indexed: 06/14/2023]
Abstract
Lead iodide (PbI2) is a van der Waals layered semiconductor with a direct bandgap in its bulk form and a hexagonal layered crystalline structure. The recently developed PbI2 nanosheets have shown great promise for high-performance optoelectronic devices, including nanolasers and photodetectors. However, despite being widely used as a precursor for perovskite materials, the optical properties of PbI2 nanomaterials remain largely unexplored. Here, we determine the nonlinear optical properties of PbI2 nanosheets by utilising nonlinear microscopy as a non-invasive optical technique. We demonstrate the nonlinearity enhancement dependent on excitonic resonances, crystalline orientation, thickness, and influence of the substrate. Our results allow for estimating the second- and third-order nonlinear susceptibilities of the nanosheets, opening new opportunities for the use of PbI2 nanosheets as nonlinear and quantum light sources.
Collapse
|
10
|
Tuan VV, Phuc H, Nguyen CV, Vi V, Kertamyshev A, Hieu NN. Rashba-type spin splitting and transport properties of novel Janus $X$WGeN$_2$ ($X =$ O, S, Se, Te) monolayers. Phys Chem Chem Phys 2022; 24:16512-16521. [DOI: 10.1039/d2cp02015g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We propose and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers $X$WGeN$_2$ ($X =$ O, S, Se, Te) using {\it ab-initio} density functional theory. All four monolayers...
Collapse
|
11
|
Kim D, Lim J, Lee S, Soufiani AM, Choi E, Ievlev AV, Borodinov N, Liu Y, Ovchinnikova OS, Ahmadi M, Lim S, Sharma P, Seidel J, Noh JH, Yun JS. Microstructural Evaluation of Phase Instability in Large Bandgap Metal Halide Perovskites. ACS NANO 2021; 15:20391-20402. [PMID: 34846843 DOI: 10.1021/acsnano.1c08726] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The optoelectronic performance of organic-inorganic halide perovskite (OIHP)-based devices has been improved in recent years. Particularly, solar cells fabricated using mixed-cations and mixed-halides have outperformed their single-cation and single-halide counterparts. Yet, a systematic evaluation of the microstructural behavior of mixed perovskites is missing despite their known composition-dependent photoinstability. Here, we explore microstructural inhomogeneity in (FAPbI3)x(MAPbBr3)1-x using advanced scanning probe microscopy techniques. Contact potential difference (CPD) maps measured by Kelvin probe force microscopy show an increased fraction of grains exhibiting a low CPD with flat topography as MAPbBr3 concentration is increased. The higher portion of low CPD contributes to asymmetric CPD distribution curves. Chemical analysis reveals these grains being rich in MA, Pb, and I. The composition-dependent phase segregation upon illumination, reflected on the emergence of a low-energy peak emission in the original photoluminescence spectra, arises from the formation of such grains with flat topology. Bias-dependent piezo-response force microscopy measurements, in these grains, further confirm vigorous ion migration and cause a hysteretic piezo-response. Our results, therefore, provide insights into the microstructural evaluation of phase segregation and ion migration in OIHPs pointing toward process optimization as a mean to further enhance their optoelectronic performance.
Collapse
Affiliation(s)
- Dohyung Kim
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
- Joint Institute for Advanced Materials, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jihoo Lim
- Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Seungmin Lee
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Arman Mahboubi Soufiani
- Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Eunyoung Choi
- Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Anton V Ievlev
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nikolay Borodinov
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yongtao Liu
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Olga S Ovchinnikova
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Mahshid Ahmadi
- Joint Institute for Advanced Materials, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sean Lim
- Electron Microscope Unit, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Pankaj Sharma
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jun Hong Noh
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Jae Sung Yun
- Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
- Department of Electrical and Electronic Engineering, Advanced Technology Institute (ATI), University of Surrey, Guildford GU2 7XH, U.K
| |
Collapse
|
12
|
Wang H, Wang X, Li D. Defects of monolayer PbI 2: a computational study. Phys Chem Chem Phys 2021; 23:20553-20559. [PMID: 34505581 DOI: 10.1039/d1cp01246k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
PbI2 is highly desired for optoelectronics, particularly as a crucial precursor in the preparation of hybrid perovskites. Multifarious defects of PbI2 have been frequently observed in experiments; however, the origin and impact on its intrinsic properties are not clear currently. Hereby, a systematic study on the defects in PbI2 was performed by first principles calculations. Likely defect structures in both 1T and 1H phases were predicted, and the corresponding formation energies at the neutral and charged states based on the pre-estimated chemical potential of I/Pb were both calculated. At the neutral states, the formation energy of VI is relatively low, which is consistent with the experimental observation. However, at the charged states, VPb seems to be dominant regardless of the chemical potential and contributes more to the conductivity. Compared with the two-dimensional transition metal dichalcogenides, the relatively low formation energy of PbI2 indicates its flexibility and the weak Pb-I interaction. Our DFT calculations bring new insights into understanding the influence of defects on its opto-electrical performance and instruct to suppress the formation of those defects that are deleterious to its performance.
Collapse
Affiliation(s)
- Han Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China.
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Da Li
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China.
| |
Collapse
|
13
|
Ghoshal D, Shang H, Sun X, Wen X, Chen D, Wang T, Lu Z, Gupta T, Efstathiadis H, West D, Koratkar N, Lu TM, Zhang S, Shi SF. Orientation-Controlled Large-Area Epitaxial PbI 2 Thin Films with Tunable Optical Properties. ACS APPLIED MATERIALS & INTERFACES 2021; 13:32450-32460. [PMID: 34196518 DOI: 10.1021/acsami.1c05734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead iodide (PbI2) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI2 with well-controlled orientation has been challenging. Additionally, the nature of grain boundaries in epitaxial thin films of PbI2 remains elusive. Here, we use mica as a model substrate to unravel the growth mechanism of large-area epitaxial PbI2 thin films. The partial growth leading to uncoalesced domains reveals the existence of inversion domain boundaries in epitaxial PbI2 thin films on mica. Combining the experimental results with first-principles calculations, we also develop an understanding of the thermodynamic and kinetic factors that govern the growth mechanism, which paves the way for the synthesis of high-quality large-area PbI2 on other substrates and heterostructures of PbI2 on single-crystalline graphene. The ability to reproducibly synthesize high-quality large-area thin films with precise control over orientation and tunable optical properties could open up unique and hitherto unavailable opportunities for the use of PbI2 and its heterostructures in optoelectronics, twistronics, substrate engineering, and strain engineering.
Collapse
Affiliation(s)
- Debjit Ghoshal
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Hanzhi Shang
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Xin Sun
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Xixing Wen
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Dongxue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Tianmeng Wang
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Zonghuan Lu
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Tushar Gupta
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Harry Efstathiadis
- Colleges of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, United States
| | - Damien West
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Nikhil Koratkar
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Toh-Ming Lu
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Shengbai Zhang
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Su-Fei Shi
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| |
Collapse
|
14
|
Sandoval S, Tobias G. Encapsulation of Fullerenes: A Versatile Approach for the Confinement and Release of Materials Within Open-Ended Multiwalled Carbon Nanotubes. Front Bioeng Biotechnol 2021; 9:644793. [PMID: 33777916 PMCID: PMC7987908 DOI: 10.3389/fbioe.2021.644793] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Accepted: 02/17/2021] [Indexed: 11/20/2022] Open
Abstract
We have employed fullerenes as versatile agents to "cork" the open tips of multiwalled carbon nanotubes (MWCNTs), and as promoting species for the release of the inorganic material filled within the nanotubes' cavities. High Z element compounds, namely, PbI2, ZnI2, and CeI3, were chosen to easily determine the presence of the filler inside the hosting nanotubes by transmission electron microscopy (TEM). Fullerenes can isolate inorganic nanostructures confined within the hollow cavities of MWCNTs, which allows the removal of the external material remnant after the filling. Otherwise, taking advantage of the affinity of fullerenes with selected solvents, we have confirmed the ability of the C60 molecules to promote the displacement of the inorganic guest from the host. We propose two different strategies to trigger the release, employing vapor and liquid phase treatments. The first protocol involves annealing filled MWCNTs in presence of fullerenes (to obtain C60PbI2@MWCNTs) and the subsequent washing of the sample in ethanol under mild conditions. On the other hand, the simultaneous introduction of the C60 molecules and the liberation of the guest are produced by a single step wet procedure; the latter being potentially useful when materials that are not stable at high temperatures are employed for filling.
Collapse
Affiliation(s)
- Stefania Sandoval
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Barcelona, Spain
| | - Gerard Tobias
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Barcelona, Spain
| |
Collapse
|
15
|
Kengmana ES, Lee JK, Li X, Warner JH, Han GGD. Self-Assembly of Bowlic Supramolecules on Graphene Imaged at the Individual Molecular Level using Heavy Atom Tagging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002860. [PMID: 32870596 DOI: 10.1002/smll.202002860] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 07/16/2020] [Indexed: 06/11/2023]
Abstract
The self-assembly of bowlic supramolecules on graphene surface is studied with single molecular sensitivity. This is achieved by incorporating a heavy metal tag in the form of a single W atom into the tip of the molecular structure, which enables the direct imaging of molecular distribution using annular dark-field scanning transmission electron microscopy (ADF-STEM) along with graphene as an electron transparent support. The bowlic molecules have nonplanar geometry, and their orientations with respect to their graphene substrate and with each other result in various packing configurations. Statistical data on intermolecular distances is obtained from numerous measurements of the bright contrast from the single metal atom tags. The analysis shows that the bowlic molecules lie sideways on the graphene surface with favorable head-to-tail stacking, rather than sitting vertically with the bowl facing toward the graphene surface. In thicker film regions, nanoscale lamellar fringes are observed, demonstrating that large-scale aligned packing extends into 3D. Image simulations and various molecular packing schemes are discussed to help interpret the ADF-STEM images and the possible range of molecular interactions occurring. These results aid the understanding of nonplanar supramolecular assemblies on van der Waals surfaces for potential applications in molecular recognition by porous films.
Collapse
Affiliation(s)
- Everett S Kengmana
- Department of Chemistry, Brandeis University, 415 South Street, Waltham, MA, 02453, USA
| | - Ja Kyung Lee
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Xiang Li
- Department of Chemistry, Brandeis University, 415 South Street, Waltham, MA, 02453, USA
| | - Jamie H Warner
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
- Department of Mechanical Engineering, University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
| | - Grace G D Han
- Department of Chemistry, Brandeis University, 415 South Street, Waltham, MA, 02453, USA
| |
Collapse
|
16
|
Tai KL, Chen J, Wen Y, Park H, Zhang Q, Lu Y, Chang RJ, Tang P, Allen CS, Wu WW, Warner JH. Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors. ACS NANO 2020; 14:11677-11690. [PMID: 32809801 DOI: 10.1021/acsnano.0c04230] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Two-dimensional (2D) materials and van der Waals heterostructures with atomic-scale thickness provide enormous potential for advanced science and technology. However, insufficient knowledge of compatible synthesis impedes wafer-scale production. PdSe2 and Pd2Se3 are two of the noble transition-metal chalcogenides with excellent physical properties that have recently emerged as promising materials for electronics, optoelectronics, catalyst, and sensors. This research presents a feasible approach to synthesize PdSe2 and Pd2Se3 with inherently asymmetric structure on honeycomb lattice 2D monolayer substrates of graphene and MoS2. We directly deposit a molecular transition-metal precursor complex on the surface of the 2D substrates, followed by low-temperature selenization by chemical vapor flow. Parameter control leads to tuning of the material from monolayer nanocrystals with Pd2Se3 phase, to continuous few-layer PdSe2 films. Annular dark-field scanning transmission electron microscopy (ADF-STEM) reveals the structure, phase variations, and heteroepitaxy at the atomic level. PdSe2 with unconventional interlayer stacking shifts appeared as the kinetic product, whereas the bilayer PdSe2 and monolayer Pd2Se3 are the thermodynamic product. The epitaxial alignment of interlayer rotation and translation between the PdSe2 and underlying 2D substrate was also revealed by ADF-STEM. These results offer both nanoscale and atomic-level insights into direct growth of van der Waals heterostructures, as well as an innovative method for 2D synthesis by predetermined nucleation.
Collapse
Affiliation(s)
- Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
| | - Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Hyoju Park
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Qianyang Zhang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Peng Tang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Christopher S Allen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Electron Physical Sciences Imaging Center, Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| |
Collapse
|