Gate controlled valley polarizer in bilayer graphene

Acoustic Valley Filter, Valve, and Diverter

The discovery of valley degrees of freedom in electronic and classical waves opened the field of valleytronics and offered the prospect for new devices based on valleys. However, the implementation of valley-based devices remains challenging in practice. Here, by taking advantage of the flexibility of phononic crystals in design and fabrication, the realizations of valley devices, or filters, valves, and diverters for acoustic waves are reported. All the devices are configured as the structures of input and output ports bridged by channels. The phononic crystals serving as ports allow the propagation of both valley polarizations, whereas the phononic crystals serving as channels, as they are narrow, only allow the propagation of single polarizations. For valley filters that achieve valley-polarized currents, the bridge channel is simply a straight single phononic crystal, but for valley valves that can turn off the valley-polarized currents, the channel consists of two parts, allowing the propagation of opposite valley polarizations. The valley diverters have one input port, and two output ports, and thus a branched channel, and the three parts in the channel allow the propagation of the same valley polarizations, so that the energy flow can be partitioned. The results may serve as a basis for developing advanced acoustic valley devices.

Chiral light detection with centrosymmetric-metamaterial-assisted valleytronics

The full-range, high-sensitivity and integratable detection of circularly polarized light (CPL) is critically important for quantum information processing, advanced imaging systems and optical sensing technologies. However, mainstream CPL detectors rely on chiral absorptive materials, and thus suffer from limited response wavelengths, low responsivity and poor discrimination ratios. Here we present a chiral light detector by utilizing valley materials to observe the spin angular momentum carried by chiral light. Delicately designed centrosymmetric metamaterials that can preserve the sign of optical spin angular momentum and greatly enhance its intensity in the near field are harnessed as a medium to inject polarized electrons into valley materials, which are then detected by the valley Hall effect. This enables high-sensitivity infrared CPL detection at room temperature by valleytronic transistors, and the detection wavelength is extended to the infrared. This approach opens pathways for chiral light detection and provides insights into potential applications of valleytronics in optoelectronic sensing.

Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction

The valley degree of freedom in two-dimensional (2D) materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a building block in manipulating valley quantum numbers and scalable valleytronics.

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states-a manifestation of the quantum valley Hall effect in Bernal bilayer graphene-quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Dissipationless layertronics in axion insulator MnBi2Te4

Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic [Formula: see text] with tailored domain structure. This makes [Formula: see text] a versatile platform to exploit the 'layertronics' to encode, process and store information. Importantly, the layer filter, layer valve and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of the Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low-energy consumption in the framework of layertronics.

Non-Hermitian Moiré Valley Filter

A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moiré pattern in the overlapping region of the two layers controlled by heterostrain. In the presence of a lattice modulation between layers, electrons propagating in one layer can have valley-dependent dissipation due to valley asymmetric interlayer coupling, thus giving rise to a valley-polarized current. Such a process can be described by an effective non-Hermitian theory, in which the valley filter is driven by a valley-resolved non-Hermitian skin effect. Nearly 100% valley polarization can be achieved within a wide parameter range and the functionality of the valley filter is electrically tunable. The non-Hermitian topological scenario of the valley filter ensures high tolerance against imperfections such as disorder and edge defects. Our work opens a new route for efficient and robust valley filters while significantly relaxing the stringent implementation requirements.

Electrostatic Tuning of Bilayer Graphene Edge Modes

We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of unprotected edge modes, propagating in both directions along the boundary. These counterpropagating edge modes allow edge backscattering, as opposed to the case of valley-momentum-locked edge modes. We then calculate the conductance of a bilayer graphene wire in presence of finger-gate electrodes, finding strong asymmetries with energy inversion and deviations from conductance quantization that can be understood with the gate-induced unprotected edge modes.

Interplay between topological valley and quantum Hall edge transport

An established way of realising topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field, topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls potentially do not correspond to a topological domain wall in the order parameter.

Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots

Pauli blockade mechanisms-whereby carrier transport through quantum dots (QD) is blocked due to selection rules even when energetically allowed-are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. The Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet-valley-singlet ground state, valley blockade is observed; and with the spin-singlet-valley-triplet ground state, robust spin blockade is shown.

Quantum Spin-Valley Hall Kink States: From Concept to Materials Design

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against both nonmagnetic short- and long-range and magnetic long-range disorder, verified by the Green-function calculations. Based on first-principles results and our fabricated samples, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications of spin-valley filters, valves, and waveguides even at room temperature.

Topological kink states in graphene

Due to the unique band structure, graphene exhibits a number of exotic electronic properties that have not been observed in other materials. Among them, it has been demonstrated that there exist the one-dimensional valley-polarized topological kink states localized in the vicinity of the domain wall of graphene systems, where a bulk energy gap opens due to the inversion symmetry breaking. Notably, the valley-momentum locking nature makes the topological kink states attractive to the property manipulation in valleytronics. This paper systematically reviews both the theoretical research and experimental progress on topological kink states in monolayer graphene, bilayer graphene and graphene-like classical wave systems. Besides, various applications of topological kink states, including the valley filter, current partition, current manipulation, Majorana zero modes and etc, are also introduced.

Ballistic Graphene Cooper Pair Splitter

We report an experimental study of a Cooper pair splitter based on ballistic graphene multiterminal junctions. In a two transverse junction geometry, namely the superconductor-graphene-superconductor and the normal metal-graphene-normal metal, we observe clear signatures of Cooper pair splitting in the local as well as nonlocal electronic transport measurements. Our experimental data can be very well described by our beam splitter model. These results open up possibilities to design new entangled state detection experiments using ballistic Cooper pair splitters.

Low-Loss Broadband Transverse Electric Pass Hybrid Plasmonic Fiber Polarizers Using Metallic Nanomaterials

Metals were for decades perceived as devoid of interesting optical properties that could be harnessed for optical components and devices. However, with the development of accurate nanofabrication techniques and precise control over architectural parameters, metals can be structured and characterized on the nanoscale. Metallic plasmonic nanomaterials exhibit a number of unique structural and optical properties, which offer the potential for developing new types of plasmonic devices. Here, we demonstrate a low-loss broadband polarizer based on a hybrid plasmonic fiber structure using metals as polarization-selective absorption materials. The polarization mechanism, design, fabrication, and characteristics of the plasmonic polarizers are investigated theoretically, numerically, and experimentally. The theoretical analysis predicts that the polarization-selective absorption with insensitivity to wavelength enables hybrid plasmonic fibers to function as broadband polarizers. Numerical simulations give the comparison of the polarization-selective absorption of various metallic nanomaterials (Ag, Au, In, Al, Cr) and show that aluminum is regarded as the optimum absorption material for the plasmonic polarizer. Experimental results show that through precise control over geometrical parameters, this device is capable of offering a high polarization extinction ratio (PER) of over 40 dB and a low insertion loss (IL) of less than 1.3 dB in the wavelength region of 810.1-870.0 nm. Compared with commercial birefringent-crystal-fiber polarizers, the plasmonic fiber polarizer has a better PER and IL bandwidth. These merits, combined with a compact and robust configuration, enable the plasmonic polarizer to have great potential in a broad range of applications.

Binding Free Energy Calculations of Bilayer Graphenes Using Molecular Dynamics

Bilayer graphenes are dimeric assemblies of single graphene layers bound together by π-complexation interactions. Controlling these assemblies can be complicated, as the layered compounds disperse in solvents or aggregate into higher columnar configurations and clusters. One way to assess the interactions that contribute to the stability of the layered compounds is to use molecular simulation. We perform pulling molecular dynamics on bilayer graphenes with different sizes and obtain the normal and shear force profiles of dissociation. We generate pathways of dissociation along the two directions and calculate the binding free energies of the structures with umbrella sampling simulations. We show that the dissociation process is direction-dependent. Along the shear direction, we compute the same free energy for the different samples, which validates the consistency of our simulations. We notice that the dissociation is less adiabatic on the normal than the shear direction, having an entropic contribution to the Gibbs energy. This contribution is more enhanced for the larger bilayer graphenes.