1
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Zhou H, Li P, Zhang E, Kunigkeit J, Zhou X, Haase K, Rita Ortega Vega M, Wang S, Xu X, Grothe J, Mannsfeld SCB, Brunner E, Kaneko K, Kaskel S. General Design Concepts for CAPodes as Ionologic Devices. Angew Chem Int Ed Engl 2023; 62:e202305397. [PMID: 37394690 DOI: 10.1002/anie.202305397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/27/2023] [Accepted: 06/27/2023] [Indexed: 07/04/2023]
Abstract
Capacitive analogues of semiconductor diodes (CAPodes) present a new avenue for energy-efficient and nature-inspired next-generation computing devices. Here, we disclose the generalized concept for bias-direction-adjustable n- and p-CAPodes based on selective ion sieving. Controllable-unidirectional ion flux is realized by blocking electrolyte ions from entering sub-nanometer pores. The resulting CAPodes exhibit charge-storage characteristics with a high rectification ratio (96.29 %). The enhancement of capacitance is attributed to the high surface area and porosity of an omnisorbing carbon as counter electrode. Furthermore, we demonstrate the use of an integrated device in a logic gate circuit architecture to implement logic operations ('OR', 'AND'). This work demonstrates CAPodes as a generalized concept to achieve p-n and n-p analogue junctions based on selective ion electrosorption, provides a comprehensive understanding and highlights applications of ion-based diodes in ionologic architectures.
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Affiliation(s)
- Hanfeng Zhou
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Panlong Li
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - En Zhang
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Jonas Kunigkeit
- Bioanalytical Chemistry, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Xiongjun Zhou
- Mechanical and Electrical Engineering, Kunming University of Science and Technology, Jingming South 727, Kunming, 650093, China
| | - Katherina Haase
- Faculty of Electrical and Computer Engineering & Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Maria Rita Ortega Vega
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Shuwen Wang
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1, Wakasato, 390-8621, Nagano-City, Japan
| | - Xiaosa Xu
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Julia Grothe
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Stefan C B Mannsfeld
- Faculty of Electrical and Computer Engineering & Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Eike Brunner
- Bioanalytical Chemistry, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
| | - Katsumi Kaneko
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1, Wakasato, 390-8621, Nagano-City, Japan
| | - Stefan Kaskel
- Inorganic Chemistry I, Technische Universität Dresden, Bergstrasse 66, 01069, Dresden, Germany
- Fraunhofer IWS, Winterbergstrasse 28, 01277, Dresden, Germany
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2
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Li T, Bandari VK, Schmidt OG. Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209088. [PMID: 36512432 DOI: 10.1002/adma.202209088] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 11/28/2022] [Indexed: 06/02/2023]
Abstract
Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.
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Affiliation(s)
- Tianming Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Vineeth Kumar Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
- Nanophysics, Dresden University of Technology, 01069, Dresden, Germany
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3
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Zou D, He Z, Chen M, Yan L, Guo Y, Gao G, Li C, Piao Y, Cheng X, Chan PKL. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211600. [PMID: 36841244 DOI: 10.1002/adma.202211600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/14/2023] [Indexed: 05/19/2023]
Abstract
Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 -DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH ) less than 0.5 V, intrinsic mobility higher than 10 cm2 V-1 s-1 and a subthreshold swing (SS) less than 100 mV dec-1 . The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.
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Affiliation(s)
- Deng Zou
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
| | - Zhenfei He
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Ming Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Lizhi Yan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yifan Guo
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Guoyun Gao
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Can Li
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yingzhe Piao
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xing Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
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4
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Gupta R, Fereiro JA, Bayat A, Pritam A, Zharnikov M, Mondal PC. Nanoscale molecular rectifiers. Nat Rev Chem 2023; 7:106-122. [PMID: 37117915 DOI: 10.1038/s41570-022-00457-8] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 11/30/2022] [Indexed: 01/15/2023]
Abstract
The use of molecules bridged between two electrodes as a stable rectifier is an important goal in molecular electronics. Until recently, however, and despite extensive experimental and theoretical work, many aspects of our fundamental understanding and practical challenges have remained unresolved and prevented the realization of such devices. Recent advances in custom-designed molecular systems with rectification ratios exceeding 105 have now made these systems potentially competitive with existing silicon-based devices. Here, we provide an overview and critical analysis of recent progress in molecular rectification within single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. Examples of conceptually important and best-performing systems are discussed, alongside their rectification mechanisms. We present an outlook for the field, as well as prospects for the commercialization of molecular rectifiers.
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5
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Li Y, Zhu M, Karnaushenko DD, Li F, Qu J, Wang J, Zhang P, Liu L, Ravishankar R, Bandari VK, Tang H, Qu Z, Zhu F, Weng Q, Schmidt OG. Microbatteries with twin-Swiss-rolls redefine performance limits in the sub-square millimeter range. NANOSCALE HORIZONS 2022; 8:127-132. [PMID: 36444694 DOI: 10.1039/d2nh00472k] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
To maintain the downscaling of microelectronic devices with footprints less than one square millimeter, next-generation microbatteries should occupy the same area and deliver adequate energy for running a new generation of multi-functional microautonomous systems. However, the current microbattery technology fails in accomplishing this task because the micrometer-sized electrodes are not compatible with on-chip integration protocols and technologies. To tackle this critical challenge, an on-chip Swiss-roll microelectrode architecture is employed that exploits the self-assembly of thin films into ultra-compact device architectures. A twin-Swiss-roll microelectrode on a chip occupies a footprint of 0.045 mm2 and delivers an energy density up to 458 μW h cm-2. After packaging, the footprint of a full cell increases to 0.11 mm2 with a high energy density of 181 μW h cm-2. The volumetric energy density excluding the chip thickness is 16.3 mW h cm-3. These results open opportunities for deploying microbatteries as energy and power sources to drive smart dust microelectronics and microautonomous systems.
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Affiliation(s)
- Yang Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Minshen Zhu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Dmitriy D Karnaushenko
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
| | - Fei Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Jiang Qu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Jinhui Wang
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Panpan Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lixiang Liu
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Rachappa Ravishankar
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Vineeth Kumar Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Hongmei Tang
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Zhe Qu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
| | - Feng Zhu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Qunhong Weng
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
- School of Materials Science and Engineering, Hunan University, Changsha, 110016, China
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, 09126, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, 09107, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Dresden, 01069, Germany
- School of Science, Dresden University of Technology, Dresden, 01069, Germany
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6
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Shivran N, Koiry SP, Kushwah N, Chauhan AK, Aswal DK, Chattopadhyay S, Mula S. Effect of Alkyl Chain Length on Current‐Voltage Characteristics of BODIPY Molecules Deposited on Si(n
++
) Substrates. ChemistrySelect 2022. [DOI: 10.1002/slct.202203711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Neelam Shivran
- Bio-Organic Division Bhabha Atomic Research Centre 400085 Mumbai India
| | - Shankar P. Koiry
- Technical Physics Division Bhabha Atomic Research Centre 400085 Mumbai India
- Homi Bhabha National Institute Anushakti Nagar 400094 Mumbai India
| | - Nisha Kushwah
- Chemistry Division Bhabha Atomic Research Centre 400085 Mumbai India
| | - Anil K. Chauhan
- Technical Physics Division Bhabha Atomic Research Centre 400085 Mumbai India
- Homi Bhabha National Institute Anushakti Nagar 400094 Mumbai India
| | - Dinesh K. Aswal
- Homi Bhabha National Institute Anushakti Nagar 400094 Mumbai India
- Health, Safety and Environment Group Bhabha Atomic Research Centre 400085 Mumbai India
| | | | - Soumyaditya Mula
- Bio-Organic Division Bhabha Atomic Research Centre 400085 Mumbai India
- Homi Bhabha National Institute Anushakti Nagar 400094 Mumbai India
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7
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Ghosh SK, Waziri I, Bo M, Singh H, Islam RU, Mallick K. Organic molecule functionalized lead sulfide hybrid system for energy storage and field dependent polarization performances. Sci Rep 2022; 12:19280. [DOI: 10.1038/s41598-022-23909-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2022] [Accepted: 11/07/2022] [Indexed: 11/13/2022] Open
Abstract
AbstractA wet chemical route is reported for synthesising organic molecule stabilized lead sulfide nanoparticles. The dielectric capacitance, energy storage performances and field-driven polarization of the organic–inorganic hybrid system are investigated in the form of a device under varying temperature and frequency conditions. The structural analysis confirmed the formation of the monoclinic phase of lead sulfide within the organic network. The band structure of lead sulfide was obtained by density functional theory calculation that supported the semiconductor nature of the material with a direct band gap of 2.27 eV. The dielectric performance of the lead sulfide originated due to the dipolar and the space charge polarization. The energy storage ability of the material was investigated under DC-bias conditions, and the device exhibited the power density values 30 W/g and 340 W/g at 100 Hz and 10 kHz, respectively. The electric field-induced polarization study exhibited a fatigue-free behaviour of the device for 103 cycles with a stable dielectric strength. The study revealed that the lead sulfide-based system has potential in energy storage applications.
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8
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Plasmonic phenomena in molecular junctions: principles and applications. Nat Rev Chem 2022; 6:681-704. [PMID: 37117494 DOI: 10.1038/s41570-022-00423-4] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 08/15/2022] [Indexed: 11/08/2022]
Abstract
Molecular junctions are building blocks for constructing future nanoelectronic devices that enable the investigation of a broad range of electronic transport properties within nanoscale regions. Crossing both the nanoscopic and mesoscopic length scales, plasmonics lies at the intersection of the macroscopic photonics and nanoelectronics, owing to their capability of confining light to dimensions far below the diffraction limit. Research activities on plasmonic phenomena in molecular electronics started around 2010, and feedback between plasmons and molecular junctions has increased over the past years. These efforts can provide new insights into the near-field interaction and the corresponding tunability in properties, as well as resultant plasmon-based molecular devices. This Review presents the latest advancements of plasmonic resonances in molecular junctions and details the progress in plasmon excitation and plasmon coupling. We also highlight emerging experimental approaches to unravel the mechanisms behind the various types of light-matter interactions at molecular length scales, where quantum effects come into play. Finally, we discuss the potential of these plasmonic-electronic hybrid systems across various future applications, including sensing, photocatalysis, molecular trapping and active control of molecular switches.
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9
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Georgiadou DG, Wijeyasinghe N, Solomeshch O, Tessler N, Anthopoulos TD. Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN). ACS APPLIED MATERIALS & INTERFACES 2022; 14:29993-29999. [PMID: 35647869 PMCID: PMC9264318 DOI: 10.1021/acsami.1c22856] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al-Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C60F48 to improve the diode's operating characteristics. Rectifier circuits fabricated with the doped CuSCN/C60F48 diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
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Affiliation(s)
- Dimitra G. Georgiadou
- Electronics
and Computer Science, University of Southampton, Highfield Campus, Southampton SO17 1BJ, United Kingdom
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
| | - Nilushi Wijeyasinghe
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
| | - Olga Solomeshch
- The
Sarah and Moshe Zisapel Nano-Electronic Center, Department of Electrical
Engineering, Technion-Israel Institute of
Technology, Haifa 3200, Israel
| | - Nir Tessler
- The
Sarah and Moshe Zisapel Nano-Electronic Center, Department of Electrical
Engineering, Technion-Israel Institute of
Technology, Haifa 3200, Israel
| | - Thomas D. Anthopoulos
- Department
of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom
- King
Abdullah University of Science and Technology (KAUST), Division of Physical Sciences and Engineering, Thuwal 23955-6900, Saudi Arabia
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10
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Bai L, Wang N, Li Y. Controlled Growth and Self-Assembly of Multiscale Organic Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2102811. [PMID: 34486181 DOI: 10.1002/adma.202102811] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Revised: 06/18/2021] [Indexed: 06/13/2023]
Abstract
Currently, organic semiconductors (OSs) are widely used as active components in practical devices related to energy storage and conversion, optoelectronics, catalysis, and biological sensors, etc. To satisfy the actual requirements of different types of devices, chemical structure design and self-assembly process control have been synergistically performed. The morphology and other basic properties of multiscale OS components are governed on a broad scale from nanometers to macroscopic micrometers. Herein, the up-to-date design strategies for fabricating multiscale OSs are comprehensively reviewed. Related representative works are introduced, applications in practical devices are discussed, and future research directions are presented. Design strategies combining the advances in organic synthetic chemistry and supramolecular assembly technology perform an integral role in the development of a new generation of multiscale OSs.
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Affiliation(s)
- Ling Bai
- Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, No. 27 # Shanda South Street, Jinan, 250100, P. R. China
| | - Ning Wang
- Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, No. 27 # Shanda South Street, Jinan, 250100, P. R. China
| | - Yuliang Li
- Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, No. 27 # Shanda South Street, Jinan, 250100, P. R. China
- Institute of Chemistry, Chinese Academy of Sciences, No. 2 # Zhongguancun North First Street, Beijing, 100190, P. R. China
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11
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Li T, Hantusch M, Qu J, Bandari VK, Knupfer M, Zhu F, Schmidt OG. On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour. Nat Commun 2022; 13:2875. [PMID: 35610214 PMCID: PMC9130281 DOI: 10.1038/s41467-022-30498-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 05/05/2022] [Indexed: 11/24/2022] Open
Abstract
Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios. Developing molecular electronics is challenged by integrating fragile organic molecules into modern micro/nanoelectronics based on inorganic semiconductors. Li et al. apply rolled-up nanotechnology to assemble on-chip molecular devices, which can be switched between photodiodes and volatile memristors.
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Affiliation(s)
- Tianming Li
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany.,Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Martin Hantusch
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Jiang Qu
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany.,Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Vineeth Kumar Bandari
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany.,Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Martin Knupfer
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Feng Zhu
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany. .,Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany. .,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany. .,State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 130022, Changchun, China.
| | - Oliver G Schmidt
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany. .,Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany. .,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany. .,School of Science, Dresden University of Technology, 01069, Dresden, Germany.
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12
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Dynamics of Spin Crossover Molecular Complexes. NANOMATERIALS 2022; 12:nano12101742. [PMID: 35630963 PMCID: PMC9144206 DOI: 10.3390/nano12101742] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Revised: 05/09/2022] [Accepted: 05/16/2022] [Indexed: 02/04/2023]
Abstract
We review the current understanding of the time scale and mechanisms associated with the change in spin state in transition metal-based spin crossover (SCO) molecular complexes. Most time resolved experiments, performed by optical techniques, rely on the intrinsic light-induced switching properties of this class of materials. The optically driven spin state transition can be mediated by a rich interplay of complexities including intermediate states in the spin state transition process, as well as intermolecular interactions, temperature, and strain. We emphasize here that the size reduction down to the nanoscale is essential for designing SCO systems that switch quickly as well as possibly retaining the memory of the light-driven state. We argue that SCO nano-sized systems are the key to device applications where the “write” speed is an important criterion.
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13
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Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods. Top Catal 2022. [DOI: 10.1007/s11244-022-01582-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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14
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Krichevsky DM, Shi L, Baturin VS, Rybkovsky DV, Wu Y, Fedotov PV, Obraztsova ED, Kapralov PO, Shilina PV, Fung K, Stoppiello CT, Belotelov VI, Khlobystov A, Chernov AI. Magnetic nanoribbons with embedded cobalt grown inside single-walled carbon nanotubes. NANOSCALE 2022; 14:1978-1989. [PMID: 35060988 DOI: 10.1039/d1nr06179h] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Molecular magnetism and specifically magnetic molecules have recently gained plenty of attention as key elements for quantum technologies, information processing, and spintronics. Transition to the nanoscale and implementation of ordered structures with defined parameters is crucial for advanced applications. Single-walled carbon nanotubes (SWCNTs) provide natural one-dimensional confinement that can be implemented for encapsulation, nanosynthesis, and polymerization of molecules into nanoribbons. Recently, the formation of atomically precise graphene nanoribbons inside SWCNTs has been reported. However, there have been only a limited amount of approaches to form ordered magnetic structures inside the nanotube channels and the creation of magnetic nanoribbons is still lacking. In this work we synthesize and reveal the properties of cobalt-phthalocyanine based nanoribbons (CoPcNRs) encapsulated in SWCNTs. Raman spectroscopy, transmission electron microscopy, absorption spectroscopy, and density functional theory calculations allowed us to confirm the encapsulation and to reveal the specific fingerprints of CoPcNRs. The magnetic properties were studied by transverse magnetooptical Kerr effect measurements, which indicated a strong difference in comparison with the pristine unfilled SWCNTs due to the impact of Co incorporated atoms. We anticipate that this approach of polymerization of encapsulated magnetic molecules inside SWCNTs will result in a diverse class of protected low-dimensional ordered magnetic materials for various applications.
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Affiliation(s)
- Denis M Krichevsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny, 141701, Russia.
- Russian Quantum Center, 30, Bolshoy Bulvar, building 1, Skolkovo Innovative Center, Moscow region, 143026, Russian Federation
| | - Lei Shi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Vladimir S Baturin
- Vernadsky Institute of Geochemistry and Analytical Chemistry of Russian Academy of Sciences, 19, Kosygina street, Moscow, 119991, Russia
- Skolkovo Institute of Science and Technology, 3, Nobel street, Moscow, 143026, Russian Federation
| | - Dmitry V Rybkovsky
- Skolkovo Institute of Science and Technology, 3, Nobel street, Moscow, 143026, Russian Federation
| | - Yangliu Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Pavel V Fedotov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny, 141701, Russia.
- A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, 38, Vavilov street, Moscow, 119991, Russian Federation
| | - Elena D Obraztsova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny, 141701, Russia.
- A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, 38, Vavilov street, Moscow, 119991, Russian Federation
| | - Pavel O Kapralov
- Russian Quantum Center, 30, Bolshoy Bulvar, building 1, Skolkovo Innovative Center, Moscow region, 143026, Russian Federation
| | - Polina V Shilina
- Russian Quantum Center, 30, Bolshoy Bulvar, building 1, Skolkovo Innovative Center, Moscow region, 143026, Russian Federation
| | - Kayleigh Fung
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Craig T Stoppiello
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
- Nanoscale and Microscale Research Centre, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Vladimir I Belotelov
- Russian Quantum Center, 30, Bolshoy Bulvar, building 1, Skolkovo Innovative Center, Moscow region, 143026, Russian Federation
- Photonic and Quantum technologies school, Lomonosov Moscow State University, Leninskie gori, 119991 Moscow, Russia
| | - Andrei Khlobystov
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Alexander I Chernov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), Dolgoprudny, 141701, Russia.
- Russian Quantum Center, 30, Bolshoy Bulvar, building 1, Skolkovo Innovative Center, Moscow region, 143026, Russian Federation
- NTI Center for Quantum Communications, National University of Science and Technology MISiS, 4, Leninskiy pr., Moscow, 119049, Russia
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15
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Ganguly S, Maiti SK. Efficient current rectification in driven acenes. Phys Chem Chem Phys 2022; 24:28436-28443. [DOI: 10.1039/d2cp03823d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
We examine the current–voltage (I–V) characteristics of different polyacenes, such as anthracene, tetracene, pentacene, etc., under the influence of an arbitrarily polarized light.
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Affiliation(s)
- Sudin Ganguly
- Department of Physics, School of Applied Sciences, University of Science and Technology Meghalaya, Ri-Bhoi-793 101, India
| | - Santanu K. Maiti
- Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700 108, India
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16
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Merces L, Candiotto G, Ferro LMM, de Barros A, Batista CVS, Nawaz A, Riul A, Capaz RB, Bufon CCB. Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103897. [PMID: 34596956 DOI: 10.1002/smll.202103897] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2021] [Revised: 08/29/2021] [Indexed: 06/13/2023]
Abstract
Intermolecular electron-transfer reactions are key processes in physics, chemistry, and biology. The electron-transfer rates depend primarily on the system reorganization energy, that is, the energetic cost to rearrange each reactant and its surrounding environment when a charge is transferred. Despite the evident impact of electron-transfer reactions on charge-carrier hopping, well-controlled electronic transport measurements using monolithically integrated electrochemical devices have not successfully measured the reorganization energies to this date. Here, it is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome this challenge. The ongoing advances in nanomembrane-origami technology allow to manufacture the nCap, a nanocapacitor platform, to perform molecular-level charge transport characterization. Thereby, employing nCap, the copper-phthalocyanine (CuPc) reorganization energy is probed, ≈0.93 eV, from temperature-dependent measurements of CuPc nanometer-thick films. Supporting the experimental findings, density functional theory calculations provide the atomistic picture of the measured CuPc charge-transfer reaction. The experimental strategy demonstrated here is a consistent route towards determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.
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Affiliation(s)
- Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
| | - Graziâni Candiotto
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
- Instituto de Química, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-909, Brazil
| | - Letícia Mariê Minatogau Ferro
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Anerise de Barros
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Carlos Vinícius Santos Batista
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Antonio Riul
- Department of Applied Physics, "Gleb Wataghin" Institute of Physics, University of Campinas, Campinas, SP, 13083-859, Brazil
| | - Rodrigo B Capaz
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
| | - Carlos César Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
- Mackenzie Presbyterian University, São Paulo, 01302-907, Brazil
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