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Guo H, Guo J, Wang Y, Wang H, Cheng S, Wang Z, Miao Q, Xu X. An Organic Optoelectronic Synapse with Multilevel Memory Enabled by Gate Modulation. ACS Appl Mater Interfaces 2024. [PMID: 38573883 DOI: 10.1021/acsami.3c19624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Artificial synaptic devices are emerging as contenders for next-generation computing systems due to their combined advantages of self-adaptive learning mechanisms, high parallel computation capabilities, adjustable memory level, and energy efficiency. Optoelectronic devices are particularly notable for their responsiveness to both voltage inputs and light exposure, making them attractive for dynamic modulation. However, engineering devices with reconfigurable synaptic plasticity and multilevel memory within a singular configuration present a fundamental challenge. Here, we have established an organic transistor-based synaptic device that exhibits both volatile and nonvolatile memory characteristics, modulated through gate voltage together with light stimuli. Our device demonstrates a range of synaptic behaviors, including both short/long-term plasticity (STP and LTP) as well as STP-LTP transitions. Further, as an encoding unit, it delivers exceptional read current levels, achieving a program/erase current ratio exceeding 105, with excellent repeatability. Additionally, a prototype 4 × 4 matrix demonstrates potential in practical neuromorphic systems, showing capabilities in the perception, processing, and memory retention of image inputs.
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Affiliation(s)
- Haotian Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Jing Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yujing Wang
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Hezhen Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Simin Cheng
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Zehao Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Qian Miao
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Xiaomin Xu
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
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Zou D, He Z, Chen M, Yan L, Guo Y, Gao G, Li C, Piao Y, Cheng X, Chan PKL. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping. Adv Mater 2023; 35:e2211600. [PMID: 36841244 DOI: 10.1002/adma.202211600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/14/2023] [Indexed: 05/19/2023]
Abstract
Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 -DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH ) less than 0.5 V, intrinsic mobility higher than 10 cm2 V-1 s-1 and a subthreshold swing (SS) less than 100 mV dec-1 . The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.
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Affiliation(s)
- Deng Zou
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
| | - Zhenfei He
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Ming Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Lizhi Yan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yifan Guo
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Guoyun Gao
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Can Li
- Department of Electrical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Yingzhe Piao
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xing Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Paddy K L Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, Hong Kong, P. R. China
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Abstract
Multivalued logic circuits, which can handle more information than conventional binary logic circuits, have attracted much attention as a promising way to improve the data-processing capabilities of integrated circuits. In this study, we developed a ternary inverter based on organic field-effect transistors (OFET) as a potential component of high-performance and flexible integrated circuits. Key elements are anti-ambipolar and n-type OFETs connected in series. First, we demonstrate an organic ternary inverter that exhibits three distinct logic states. Second, the operating voltage was greatly reduced by taking advantage of an Al2O3 gate dielectric. Finally, the operating voltage was finely tuned by the designing of the device geometry. These results are achievable owing to the flexible controllability of the device configuration, suggesting that the organic ternary inverter plays an important role with regard to high-performance organic integrated circuits.
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Affiliation(s)
- Kazuyoshi Kobashi
- International Center for Materials Nanoarchitectonics (WPI-MANA) , National Institute for Materials Science (NIMS) 1-1 Namiki , Tsukuba 305-0044 , Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering , Kyushu University 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA) , National Institute for Materials Science (NIMS) 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Toyohiro Chikyow
- International Center for Materials Nanoarchitectonics (WPI-MANA) , National Institute for Materials Science (NIMS) 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA) , National Institute for Materials Science (NIMS) 1-1 Namiki , Tsukuba 305-0044 , Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering , Kyushu University 1-1 Namiki , Tsukuba 305-0044 , Japan
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Tsuruoka T, Hayakawa R, Kobashi K, Higashiguchi K, Matsuda K, Wakayama Y. Laser Patterning of Optically Reconfigurable Transistor Channels in a Photochromic Diarylethene Layer. Nano Lett 2016; 16:7474-7480. [PMID: 27960497 DOI: 10.1021/acs.nanolett.6b03162] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Optical switching organic field-effect transistors (OFETs) provide a new direction for optoelectronics based on photochromic molecules. However, the patterning of OFETs is difficult because conventional fabrication processes, including lithography and ion etching, inevitably cause severe damage to organic molecules. Here, we demonstrate laser patterning of one-dimensional (1D) channels on an OFET with a photochromic diarylethene (DAE) layer. The main findings are (i) a number of 1D channels can be repeatedly written and erased in the DAE layer by scanning focused ultraviolet and visible light laser beams alternately between the source and drain electrodes, (ii) the conductivity (or resistivity) of the 1D channel can be controlled by the illumination conditions, such as the laser power density and the scan speed, and (iii) it is possible to draw an analogue adder circuit by optically writing 1D channels so that a portion of the channels overlaps and to perform optical summing operations by local laser illumination of the respective channels. These findings will open new possibilities for realizing various optically reconfigurable, low-dimensional organic transistor circuits, which are not possible with conventional thin film OFETs.
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Affiliation(s)
- Tohru Tsuruoka
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kazuyoshi Kobashi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba, 305-0044, Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Higashiguchi
- Department of Synthetic Chemistry and Biological Chemistry, Graduate School of Engineering, Kyoto University , Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Kenji Matsuda
- Department of Synthetic Chemistry and Biological Chemistry, Graduate School of Engineering, Kyoto University , Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba, 305-0044, Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University , 1-1 Namiki, Tsukuba 305-0044, Japan
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Zhuang X, Huang W, Yang X, Han S, Li L, Yu J. Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol)-Blended Dielectric Layer Towards High-Performance Organic Field-Effect Transistor. Nanoscale Res Lett 2016; 11:439. [PMID: 27709560 PMCID: PMC5052155 DOI: 10.1186/s11671-016-1660-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2016] [Accepted: 09/26/2016] [Indexed: 05/22/2023]
Abstract
Biocompatible silk fibroin (SF):poly(vinyl alcohol) (PVA) blends were prepared as the dielectric layers of organic field-effect transistors (OFETs). Compared with those with pure SF dielectric layer, an optimal threshold voltage of ~0 V, high on/off ratio of ~104, and enhanced field-effect mobility of 0.22 cm2/Vs of OFETs were obtained by carefully controlling the weight ratio of SF:PVA blends to 7:5. Through the morphology characterization of dielectrics and organic semiconductors by utilizing atom force microscopy and electrical characterization of the devices, the performance improvement of OFETs with SF:PVA hybrid gate dielectric layers were attributed to the smooth and homogeneous morphology of blend dielectrics. Furthermore, due to lower charge carrier trap density, the OFETs based on SF:PVA-blended dielectric exhibited a higher bias stability than those based on pure SF dielectric.
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Affiliation(s)
- Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
| | - Wei Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
- Department of Chemistry and the Materials Research Center Northwestern University, 2145, Sheridan Road, Evanston, IL 60208 USA
| | - Xin Yang
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
| | - Shijiao Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
| | - Lu Li
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
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Wakayama Y, Hayakawa R, Seo HS. Recent progress in photoactive organic field-effect transistors. Sci Technol Adv Mater 2014; 15:024202. [PMID: 27877655 PMCID: PMC5090406 DOI: 10.1088/1468-6996/15/2/024202] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2014] [Revised: 04/08/2014] [Accepted: 03/17/2014] [Indexed: 05/19/2023]
Abstract
Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.
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Affiliation(s)
- Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan
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