Atomically thin photoanode of InSe/graphene heterostructure

Infrared In-Sensor Computing Based on Flexible Photothermoelectric Tellurium Nanomesh Arrays

The inherent limitations of traditional von Neumann architectures hinder the rapid development of internet of things technologies. Beyond conventional, complementary metal-oxide-semiconductor technologies, imaging sensors integrated with near- or in-sensor computing architectures emerge as a promising solution. In this study, the multi-scale van der Waals (vdWs) interactions in 1D tellurium (Te) atomic chains are explored, leading to the deposition of a photothermoelectric (PTE) Te nanomesh on a polymeric polyimide substrate. The self-welding process enables the lateral vapor growth of a well-connected Te nanomesh with robust electrical and mechanical properties, including a PTE responsivity of ≈120 V W-1 in the infrared light regime. Leveraging the PTE operation, the thermal-coupled bi-directional photoresponse is investigated to demonstrate a proof-of-principle in-sensor convolutional network for edge computing. This work presents a scalable approach for assembling functional vdWs Te nanomesh and highlights its potential applications in PTE image sensing and convolutional processing.

Symmetry Breaking in Twisted Mixed-Dimensional Heterostructure Interfaces for Multifunctional Polarization-Sensitive Photodetection

Moiré superlattices, created by stacking different van der Waals materials at twist angles, have emerged as a versatile platform for exploring intriguing phenomena such as topological properties, superconductivity, the quantum anomalous Hall effect, and the unconventional Stark effect. Additionally, the formation of moiré superlattice potential can generate spontaneous symmetry breaking, leading to an anisotropic optical response and electronic transport behavior. Herein, we propose a two-step chemical vapor deposition (CVD) strategy for synthesizing WS2/Sb2S3 moiré superlattices. Density functional theory calculations show that the moiré potential and interlayer distance at the WS2/Sb2S3 interface can generate anisotropic electronic states. The atomic-resolution HAADF-STEM image clearly reveals angle-dependent complicated moiré periodicity. The polarization-dependent second harmonic generation, Raman, photoluminescence, and absorption spectroscopy of the WS2/Sb2S3 heterostructure confirm optical anisotropic behavior due to symmetry breaking by the moiré superlattice formation. The WS2/Sb2S3 device exhibits high on/off ratios up to 106, a relatively low leakage current of 10-13 A, and a broadband optoelectronic response range from 360 to 914 nm. Notably, the broken symmetry by C2-symmetric Sb2S3 nanowires grown on a C3-symmetric WS2 nanosheet endows the WS2/Sb2S3 photodetector with strong polarization-dependent photocurrent intensity and high-resolution polarization imaging capability. Our study demonstrates the potential for constructing multifunctional moiré materials by incorporating symmetry-breaking engineering.

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Two-dimensional (2D) InSe and PtTe2 have drawn extensive attention due to their intriguing properties. However, the InSe monolayer is an indirect bandgap semiconductor with a low hole mobility. van der Waals (vdW) heterostructures produce interesting electronic and optoelectronic properties beyond the existing 2D materials and endow totally new device functions. Herein, we theoretically investigated the electronic structures, transport behaviors, and electric field tuning effects of the InSe/PtTe2 vdW heterostructures. The calculated results show that the direct bandgap type-II vdW heterostructures can be realized by regulating the stacking configurations of heterostructures. By applying an external electric field, the band alignment and bandgap of the heterostructures can also be flexibly modulated. Particularly, the hole mobility of the heterostructures is improved by 2 orders of magnitude to ∼103 cm2 V-1 s-1, which overcomes the intrinsic disadvantage of the InSe monolayer. The InSe/PtTe2 vdW heterostructures have great potential applications in developing novel optoelectronic devices.

One-atom-thick hexagonal boron nitride co-catalyst for enhanced oxygen evolution reactions

Developing efficient (co-)catalysts with optimized interfacial mass and charge transport properties is essential for enhanced oxygen evolution reaction (OER) via electrochemical water splitting. Here we report one-atom-thick hexagonal boron nitride (hBN) as an attractive co-catalyst with enhanced OER efficiency. Various electrocatalytic electrodes are encapsulated with centimeter-sized hBN films which are dense and impermeable so that only the hBN surfaces are directly exposed to reactive species. For example, hBN covered Ni-Fe (oxy)hydroxide anodes show an ultralow Tafel slope of ~30 mV dec-1 with improved reaction current by about 10 times, reaching ~2000 mA cm-2 (at an overpotential of ~490 mV) for over 150 h. The mass activity of hBN co-catalyst is found exceeding that of commercialized catalysts by up to five orders of magnitude. Using isotope experiments and simulations, we attribute the results to the adsorption of oxygen-containing intermediates at the insulating co-catalyst, where localized electrons facilitate the deprotonation processes at electrodes. Little impedance to electron transfer is observed from hBN film encapsulation due to its ultimate thickness. Therefore, our work also offers insights into mechanisms of interfacial reactions at the very first atomic layer of electrodes.

Surface Stoichiometry Control of Colloidal Heterostructured Quantum Dots for High-Performance Photoelectrochemical Hydrogen Generation

Manipulating the separation and transfer behaviors of charges has long been pursued for promoting the photoelectrochemical (PEC) hydrogen generation based on II-VI quantum dot (QDs), but remains challenging due to the lack of effective strategies. Herein, a facile strategy is reported to regulate the recombination and transfer of interfacial charges through tuning the surface stoichiometry of heterostructured QDs. Using this method, it is demonstrated that the PEC cells based on CdSe-(Se_x S_{1- x} )₄ -(CdS)₂ core/shell QDs with a proper S_surface /Cd_surface ratio exhibits a remarkably improved photocurrent density (≈18.4 mA cm^-2 under one sun illumination), superior to the PEC cells based on QDs with Cd-rich or excessive S-rich surface. In-depth electrochemical and spectroscopic characterizations reveal the critical role (hole traps) of surface S atoms in suppressing the recombination of photogenerated charges, and further attribute the inferior performance of excessive S-rich QDs to the impeded charge transfer from QDs to TiO₂ and electrolyte. This work puts forward a simple surface engineering strategy for improving the performance of QDs PEC cells, providing an efficient method to guide the surface design of QDs for their applications in other optoelectronic devices.

Pristine GaFeO3 Photoanodes with Surface Charge Transfer Efficiency of Almost Unity at 1.23 V for Photoelectrochemical Water Splitting

Oxide-based photoelectrodes commonly generate deep trap states associated with various intrinsic defects such as vacancies, antisites, and dislocations, limiting their photoelectrochemical properties. Herein, it is reported that rhombohedral GaFeO3 (GFO) thin-film photoanodes exhibit defect-inactive features, which manifest themselves by negligible trap-states-associated charge recombination losses during photoelectrochemical water splitting. Unlike conventional defect-tolerant semiconductors, the origin of the defect-inactivity in GFO is the strongly preferred antisite formation, suppressing the generation of other defects that act as deep traps. In addition, defect-inactive GFO films possess really appropriate oxygen vacancy concentration for the oxygen evolution reaction (OER). As a result, the as-prepared GFO films achieve the surface charge transfer efficiency (ηsurface ) of 95.1% for photoelectrochemical water splitting at 1.23 V versus RHE without any further modification, which is the highest ηsurface reported of any pristine inorganic photoanodes. The onset potential toward the OER remarkably coincides with the flat band potential of 0.43 V versus RHE. This work not only demonstrates a new benchmark for the surface charge transfer yields of pristine metal oxides for solar water splitting but also enriches the arguments for defect tolerance and highlights the importance of rational tuning of oxygen vacancies.

Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering

Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe₂ (or MoS₂) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe₂ channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe₂ p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 10³. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors require complex fabrication processes. Here, we demonstrate high-performance self-powered InSe-based photoelectrochemical (PEC) photodetectors using electrochemical intercalated ultrathin InSe nanosheets. The ultrathin InSe nanosheets have good crystallinity with a uniform thickness of 1.4-2.1 nm, lateral size up to 18 μm, and yield of 82%. The self-powered InSe-based PEC photodetectors show broadband photoresponse ranging from 365 to 850 nm. The photoresponse of InSe-based PEC photodetectors is boosted by suppressing p-type doping of the intercalator with annealing, which improves the electrical properties and facilitates electron transport from InSe to the electrode. The self-powered annealed InSe (A-InSe) PEC photodetectors show a high responsivity of 10.14 mA/W and fast response speed of 2/37 ms. Moreover, the self-powered PEC photodetectors have good stability under UV-NIR irradiation. Furthermore, the photoresponse can be effectively tuned by the concentration and kind of electrolyte. The facile large-scale fabrication and good photoresponse demonstrate that 2D ultrathin InSe can be applied in high-performance optoelectronic devices.

Host/Guest Nanostructured Photoanodes Integrated with Targeted Enhancement Strategies for Photoelectrochemical Water Splitting

Photoelectrochemical (PEC) hydrogen production from water splitting is a green technology that can solve the environmental and energy problems through converting solar energy into renewable hydrogen fuel. The construction of host/guest architecture in semiconductor photoanodes has proven to be an effective strategy to improve solar-to-fuel conversion efficiency dramatically. In host/guest photoanodes, the absorber layer is deposited onto a high-surface-area electron collector, resulting in a significant enhancements in light-harvesting as well as charge collection and separation efficiency. The present review aims to summarize and highlight recent state-of-the-art progresses in the architecture designing of host/guest photoanodes with integrated enhancement strategies, including i) light trapping effect; ii) optimization of conductive host scaffolds; iii) hierarchical structure engineering. The challenges and prospects for the future development of host/guest nanostructured photoanodes are also presented.

When graphene meets white graphene - recent advances in the construction of graphene and h-BN heterostructures

2D heterostructures have very recently witnessed a boom in scientific and technological activities owing to the customized spatial orientation and tailored physical properties. A large amount of 2D heterostructures have been constructed on the basis of the combination of mechanical exfoliation and located transfer method, opening wide possibilities for designing novel hybrid systems with tuned structures, properties, and applications. Among the as-developed 2D heterostructures, in-plane graphene and h-BN heterostructures have drawn the most attention in the past few decades. The controllable synthesis, the investigation of properties, and the expansion of applications have been widely explored. Herein, the fabrication of graphene and h-BN heterostructures is mainly focused on. Then, the spatial configurations for the heterostructures are systematically probed to identify the highly related unique features. Moreover, as a most promising approach for the scaled production of 2D materials, the in situ CVD fabrication of the heterostructures is summarized, demonstrating a significant potential in the controllability of size, morphology, and quality. Further, the recent applications of the 2D heterostructures are discussed. Finally, the concerns and challenges are fully elucidated and a bright future has been envisioned.

Kinetic photovoltage along semiconductor-water interfaces

External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast, in-plane potential gradient along the interface has been rarely observed. Here we show that scanning a light beam can induce a persistent in-plane photoelectric voltage along, instead of across, silicon-water interfaces. It is attributed to the following movement of a charge packet in the vicinity of the silicon surface, whose formation is driven by the light-induced potential change across the capacitive interface and a high permittivity of water with large polarity. Other polar liquids and hydrogel on silicon also allow the generation of the in-plane photovoltage, which is, however, negligible for nonpolar liquids. Based on the finding, a portable silicon-hydrogel array has been constructed for detecting the shadow path of a moving Cubaris. Our study opens a window for silicon-based photoelectronics through introducing semiconductor-water interfaces.