Ultralow-voltage operation of light-emitting diodes

Enhancing Thermal Tolerance for Bright and Stable Near-Infrared Perovskite LEDs

Perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation display technologies, owing to their high efficiency and color purity. However, the operational instability of PeLEDs at high current densities (>100 mA cm-2) remains a significant challenge. Here, near-infrared (≈797 nm) PeLEDs are reported with peak external quantum efficiencies (EQEs) of ≈24.7% and EQEs of >20% across a wide range of current densities (70-1200 mA cm-2), resulting in an ultra-high peak radiance of 2270 W sr-1 m-2. These PeLEDs exhibit outstanding operational stability with operational lifetimes (T50) of 6.6, 12.7, 19.2, 49.5, 238.6, and 350 h at current densities of 500, 400, 300, 200, 100, and 50 mA cm-2, respectively. The high stability is enabled by a multifunctional stabilizer containing formamidine groups, which prevent phase transition and decomposition of the α-FAPbI3 perovskite under elevated temperatures. This work demonstrates the feasibility of achieving efficient and stable PeLEDs at high current densities, providing strategies for the development of high-power optoelectronic devices based on halide perovskites.

Efficient Rec. 2020 Compliant Pure-Green Mixed-Cation Perovskite Light-Emitting Diodes With Multifunctional Co-Additives

Perovskite light-emitting diodes (PeLEDs) compliant with Rec. 2020 standards have raised increasing attention for next-generation displays. As a class of pure-green emitters, the mixed-cation FAxCs1-xPbBr3 perovskites exhibit compatible band emission, but suffer from inferior luminescence performance. The approach to tackling this issue is hindered by a lack of in-depth understanding of their crystallization manipulating mechanism. This work unveils the crystallization process of mixed-cation FA0.7Cs0.45GA0.1PbBr3 perovskites, demonstrating the fast spontaneous growth readily induces severe crystal defects accompanied by poor charge confinement. This motivates us to introduce additional kinetic barriers to manipulate the perovskite crystallization via the synergistic co-additives of 3-((2-(methacryloyloxy)ethyldimethyl)ammonio)-propane-1-sulfonate (DMAPS) and 1,4,7,10,13,16-hexaoxacyclooctadecane (crown). The multifunctional groups in the co-additives afford robust chemical affinities with the diverse organic and inorganic precursor ions simultaneously, which enable decent nanograin growth with effective crystal defect healing and charge confinement. Ultimately, mixed-cation FA0.7Cs0.45GA0.1PbBr3 perovskites with a high photoluminescence quantum yield of 96% are achieved. The resultant pure-green PeLEDs with the Rec. 2020 compliance exhibit a champion external quantum efficiency (EQE) of 31.89%, average EQE of 29.5%, maximum luminance of 2 × 105 cd m-2 and operational half-lifetime of 3.2 h at an initial luminance of 7000 cd m-2 (extrapolated: ≈3500 h at 100 cd m-2).

Influence of Interfacial Reactions on Perovskite Optoelectronic Devices

Interfacial materials tend to alter the crystallization, films growth and defect formation process of the as-deposited perovskites, which has been a critical and fundamental factor in determining the efficiency and operational stability of perovskite-based optoelectronic devices. This review explores the underlying mechanism of interfacial reactions, which can either result in degradations or be beneficial. The influence of interfacial reactions, mainly interface-induced deprotonation of organic cations and amidation processes, are discussed in relation to their impact on perovskite film growth and ensuing optoelectronic device performance. It is further proposed strategies to regulate these reactions and mitigate their negative effects to achieve high performance optoelectronic devices.

Surfactant-induced hole concentration enhancement for highly efficient perovskite light-emitting diodes

It is widely acknowledged that constructing small injection barriers for balanced electron and hole injections is essential for light-emitting diodes (LEDs). However, in highly efficient LEDs based on metal halide perovskites, a seemingly large hole injection barrier is usually observed. Here we rationalize this high efficiency through a surfactant-induced effect where the hole concentration at the perovskite surface is enhanced to enable sufficient bimolecular recombination pathways with injected electrons. This effect originates from the additive engineering and is verified by a series of optical and electrical measurements. In addition, surfactant additives that induce an increased hole concentration also significantly improve the luminescence yield, an important parameter for the efficient operation of perovskite LEDs. Our results not only provide rational design rules to fabricate high-efficiency perovskite LEDs but also present new insights to benefit the design of other perovskite optoelectronic devices.

Nanocrystalline Perovskites for Bright and Efficient Light-Emitting Diodes

Nanocrystalline perovskites have driven significant progress in metal halide perovskite light-emitting diodes (PeLEDs) over the past decade by enabling the spatial confinement of excitons. Consequently, three primary categories of nanocrystalline perovskites have emerged: nanoscale polycrystalline perovskites, quasi-2D perovskites, and perovskite nanocrystals. Each type has been developed to address specific challenges and enhance the efficiency and stability of PeLEDs. This review explores the representative material design strategies for these nanocrystalline perovskites, correlating them with exciton recombination dynamics and optical/electrical properties. Additionally, it summarizes the trends in progress over the past decade, outlining four distinct phases of nanocrystalline perovskite development. Lastly, this review addresses the remaining challenges and proposes a potential material design to further advance PeLED technology toward commercialization.

Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening

Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce "giant" fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting, shallow valence band maximum, and improved quasi-Fermi level splitting, which effectively flatten the energy landscape between the QD layer and hole transport layer. The higher electron concentration and accelerated hole injection significantly promote the carrier radiative recombination dynamics. Consequently, CdZnSe-based device exhibits a high power conversion efficiency (PCE) of 27.3% and an ultra-low efficiency roll-off, with a high external quantum efficiency (EQE) exceeding 25% over a wide range of low driving voltages (1.8-3.0 V) and low heat generation. The record-high luminance levels of 1,400 and 8,600 cd m-2 are achieved at bandgap voltages of 100% and 120%, respectively. Meanwhile, These LEDs show an unprecedented operation lifetime T95 (time for the luminance to decrease to 95%) of 72,968 h at 1,000 cd m-2. Our work points to a novel path to flatten energy landscape at the QD-related interface for solution-processed photoelectronic devices.

High-Voltage Stable Perovskite Light-Emitting Diodes Enabled by an Optoelectric-Tunable Sandwiched Nanostructure

While metal halide light-emitting diodes (PeLEDs) with unique optoelectronic properties are promising emitters for next-generation displays, their performance degrades rapidly due to severe ion migration during continuous operation, especially at high voltages. Here, we realize highly stable PeLEDs by designing inorganic dielectric/perovskite semiconductor emitter/organic dielectric sandwiched nanostructures to mitigate ion migration via regulating the electric field distribution. The bilateral cesium carbonate (Cs2CO3) and tetraoctylammonium bromide (TOAB) thin interlayers can not only largely reduce the voltage imposed on the perovskite layer by serving as series resistors and, thus, mitigate the ion migration but also regulate the charge carrier transfer to improve the radiative recombination efficiency. In addition, the underneath inorganic Cs2CO3 film also provides more heterogeneous nucleation sites for growing high-crystallinity perovskite crystals, while the atop TOAB with bifunctional groups (organic amino and Br- ions) refines the morphology and enhances the optical properties of the perovskite film. As a result, efficient and stable green PeLEDs based on such an optoelectric-tunable nanostructure exhibit extremely slow efficiency decay as the applied voltage increases, and the external quantum efficiencies were maintained over 10% at a high bias up to 20 V.

Atomic Layer-Deposited Silane Coupling Agent for Interface Passivation of Quantum Dot Light-Emitting Diodes

Inserting an insulating layer between the charge transport layer (CTL) and quantum dot emitting layer (QDL) is widely used in improving the performance of quantum dot light-emitting diodes (QLEDs). However, the additional layer inevitably leads to energy loss and joule heat. Herein, a monolayer silane coupling agent is used to modify the said interfaces via the self-limiting adsorption effect. Because the ultrathin layers induce negligible series resistance to the device, they can partially passivate the interfacial defects on the electron transport side and help confine the electrons within the QDL on the hole transport side. These interfacial modifications can not only suppress the nonradiative recombination but also slow down the aging of the hole transport layer. The findings here underline a low-temperature adsorption-based strategy for effective interfacial modification which can be used in any layer-by-layer device structures.

Ultralow voltage-driven efficient and stable perovskite light-emitting diodes

The poor operational stability of perovskite light-emitting diodes (PeLEDs) remains a major obstacle to their commercial application. Achieving high brightness and quantum efficiency at low driving voltages, thus effectively reducing heat accumulation, is key to enhancing the operational lifetime of PeLEDs. Here, we present a breakthrough, attaining a record-low driving voltage while maintaining high brightness and efficiency. By thoroughly suppressing interface recombination and ensuring excellent charge transport, our PeLEDs, with an emission peak at 515 nanometers, achieve a maximum brightness of 90,295 candelas per square meter and a peak external quantum efficiency of 27.8% with an ultralow turn-on voltage of 1.7 volts (~70% bandgap voltage). Notably, Joule heat is nearly negligible at these low driving voltages, substantially extending the operational lifetime to 7691.1 hours. Our optimized strategies effectively tackle stability issue through thermal management, paving the way for highly stable PeLEDs.

Efficient Perovskite Nanograin Light-Emitting Diodes in Green-to-Blue Gamut with Co-Additive Engineering

Perovskite nanograins exceeding the Bohr exciton diameter show great potential for high-performance light-emitting diodes (LEDs) owing to their bandgap homogeneity, spatial charge confinement, and nonlocal interaction. However, it is challenging to directly synthesize proper nanograins along with reduced crystal defects on functional substrate, and the corresponding high-efficiency perovskite LEDs (PeLEDs) have rarely been reported. In this study, crystallization modulation for perovskites with an effective co-additive system, including lithium bromide, p-fluorophenethylammonium bromide, and 18-crown-6, is performed. Furthermore, it is demonstrated that the proposed co-additive system can synergistically retard perovskite crystallization and reduce crystal defects. Consequently, high-quality perovskite nanograin solids (≈22.8 nm) are obtained with a high photoluminescence quantum yield (≈88%). These superior optical properties contribute to developing efficient green PeLEDs with a champion external quantum efficiency (EQE) of 28.4% and an average EQE of 27.1%. The co-additive system can be universally applied to mixed-halide perovskite nanograin LED, presenting a maximum EQE of 24.4%, 21.6%, 17.5%, and 11.1% for the blue device at 496, 488, 478, and 472 nm, respectively, along with a narrow spectral linewidth (17-14 nm) and stable color. These results supplement the research on high-efficiency perovskite nanograin LEDs for multicolor displays and lighting.

Reduced-Toxicity and Highly Luminescent Germanium-Lead Perovskites Enabled by Strain Reduction for Light-Emitting Diodes

Germanium-lead (Ge-Pb) perovskites provide a promising solution for perovskite optoelectronic devices with reduced toxicity. However, Ge-Pb perovskite light-emitting diodes (PeLEDs) with >30 mol % Ge showed low emission efficiencies [Yang, D.; Zhang, G.; Lai, R.; Cheng, Y.; Lian, Y.; Rao, M.; Huo, D.; Lan, D.; Zhao, B.; Di, D. Germanium-Lead Perovskite Light-Emitting Diodes. Nat. Commun. 2021, 12 (1), 4295]. Here, we apply strain engineering to effectively improve the light emission efficiency and stability of Ge-Pb perovskite films and PeLEDs with 30 and 60 mol % Ge, through A-site modulation. The maximum external quantum efficiencies of the Ge-Pb PeLEDs with 30 and 60 mol % Ge are 8.5% and 3.0% at 3.32 mA cm-2 (∼922 cd m-2) and 0.53 mA cm-2 (∼60 cd m-2), respectively. Time-resolved transient absorption spectroscopy analysis of Ge-Pb perovskite films on different hole-transport layers shows that incorporating 30 mol % Ge into the perovskite with mixed A-site cations can effectively suppress trap-assisted recombination. Further analysis of their current density-voltage (J-V) curves reveals the efficiency loss mechanisms of Ge-Pb PeLEDs with high Ge fractions, indicating the possibility of further improvements.

High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr3 Emitters in a Carrier-Confined Heterostructure

Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.

A robust thin-film droplet-induced electricity generator

The pursuit of cost-effective, high-voltage electricity generators activated by droplets represents a new frontier in hydropower technology. This study presents an economical method for crafting droplet generators using common materials such as solid polytetrafluoroethylene (PTFE) films and readily available tapes, eliminating the need for specialized cleanroom facilities. A thorough investigation into voltage-limiting factors, encompassing device capacitance and induced electrode charges, reveals specific areas with potential for optimization. A substantial enhancement in the open-circuit voltage (Voc) was achieved, reaching approximately 282.2 ± 27.9 V-an impressive increase of around 60 V compared to earlier benchmarks. One device showcased its capability to power 100 LEDs concurrently, underscoring its efficacy. Ten such devices created diverse luminous patterns with uniform light intensity for each LED, showcasing the practical potential of the approach. The methodology's cost-effectiveness results in a remarkable cost reduction compared to solution-based materials, paving the way for the widespread adoption of large-scale water droplet energy harvesting.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides

Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.

Blue organic light-emitting diode with a turn-on voltage of 1.47 V

Among the three primary colors, blue emission in organic light-emitting diodes (OLEDs) are highly important but very difficult to develop. OLEDs have already been commercialized; however, blue OLEDs have the problem of requiring a high applied voltage due to the high-energy of blue emission. Herein, an ultralow voltage turn-on at 1.47 V for blue emission with a peak wavelength at 462 nm (2.68 eV) is demonstrated in an OLED device with a typical blue-fluorescent emitter that is widely utilized in a commercial display. This OLED reaches 100 cd/m2, which is equivalent to the luminance of a typical commercial display, at 1.97 V. Blue emission from the OLED is achieved by the selective excitation of the low-energy triplet states at a low applied voltage by using the charge transfer (CT) state as a precursor and triplet-triplet annihilation, which forms one emissive singlet from two triplet excitons.

The fatigue effects in red emissive CdSe based QLED operated around turn-on voltage

The operational stability is a current bottleneck facing the quantum dot light-emitting diodes (QLEDs). In particular, the device working around turn-on voltage suffers from unbalanced charge injection and heavy power loss. Here, we investigate the operational stability of red emissive CdSe QLEDs operated at different applied voltages. Compared to the rising luminance at higher voltages, the device luminance quickly decreases when loaded around the turn-on voltage, but recovers after unloading or slight heat treatment, which is termed fatigue effects of operational QLED. The electroluminescence and photoluminescence spectra before and after a period of operation at low voltages show that the abrupt decrease in device luminance derives from the reduction of quantum yield in quantum dots. Combined with transient photoluminescence and electroluminescence measurements, as well as equivalent circuit model analysis, the electron accumulation in quantum dots mainly accounts for the observed fatigue effects of a QLED during the operation around turn-on voltage. The underlying mechanisms at the low-voltage working regime will be very helpful for the industrialization of QLED.

Bright and stable perovskite light-emitting diodes in the near-infrared range

Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1-15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm-2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm-2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm-2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm-2, along with a high radiance of more than 3,200 W s-1 m-2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s-1 m-2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

Sub-Bandgap-Voltage Electroluminescence of Light-Emitting Diodes

Sub-bandgap-voltage electroluminescence (EL) has been frequently reported in quantum dot, organic, and perovskite light-emitting diodes. Due to the complex physical process across devices, the underlying mechanism is still under intensive debate. Here, based on thermodynamics, we offer an orthodox explanation of sub-bandgap-voltage EL and discuss the applicability of the previously proposed models.