K-point longitudinal acoustic phonons are responsible for ultrafast intervalley scattering in monolayer MoSe2

Ultrafast chirality-dependent dynamics from helicity-resolved transient absorption spectroscopy

Chirality, a pervasive phenomenon in nature, is widely studied across diverse fields including the origins of life, chemical catalysis, drug discovery, and physical optoelectronics. The investigations of natural chiral materials have been constrained by their intrinsically weak chiral effects. Recently, significant progress has been made in the fabrication and assembly of low-dimensional micro and nanoscale chiral materials and their architectures, leading to the discovery of novel optoelectronic phenomena such as circularly polarized light emission, spin and charge flip, advocating great potential for applications in quantum information, quantum computing, and biosensing. Despite these advancements, the fundamental mechanisms underlying the generation, propagation, and amplification of chirality in low-dimensional chiral materials and architectures remain largely unexplored. To tackle these challenges, we focus on employing ultrafast spectroscopy to investigate the dynamics of chirality evolution, with the aim of attaining a more profound understanding of the microscopic mechanisms governing chirality generation and amplification. This review thus provides a comprehensive overview of the chiral micro-/nano-materials, including two-dimensional transition metal dichalcogenides (TMDs), chiral halide perovskites, and chiral metasurfaces, with a particular emphasis on the physical mechanism. This review further explores the advancements made by ultrafast chiral spectroscopy research, thereby paving the way for innovative devices in chiral photonics and optoelectronics.

Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions

In recent years, computational approaches which couple density functional theory (DFT)-based description of the electron-phonon and phonon-phonon scattering rates with the Boltzmann transport equation have been shown to obtain the electron and thermal transport characteristics of many 3D and 2D semiconductors in excellent agreement with experimental measurements. At the same time, progress in the DFT-based description of the electron-phonon scattering has also allowed to describe the non-equilibrium relaxation dynamics of hot or photo-excited electrons in several materials, in very good agreement with time-resolved spectroscopy experiments. In the latter case, as the time-resolved spectroscopy techniques provide the possibility to monitor transient material characteristics evolving on the femtosecond and attosecond time scales, the time evolution of photo-excited, nonthermal carrier distributions has to be described. Similarly, reliable theoretical approaches are needed to describe the transient transport properties of devices involving high energy carriers. In this review, we aim to discuss recent progress in coupling the ab initio description of materials, especially that of the electron-phonon scattering, with the time-dependent approaches describing the time evolution of the out-of-equilibrium carrier distributions, in the context of time-resolved spectroscopy experiments as well as in the context of transport simulations. We point out the computational limitations common to all numerical approaches, which describe time propagation of strongly out-of-equilibrium carrier distributions in 3D materials, and discuss the methods used to overcome them.

Holstein Polarons, Rashba-Like Spin Splitting, and Ising Superconductivity in Electron-Doped MoSe2

Interaction between electrons and phonons in solids is a key effect defining the physical properties of materials, such as electrical and thermal conductivity. In transition metal dichalcogenides (TMDCs), the electron-phonon coupling results in the formation of polarons, quasiparticles that manifest themselves as discrete features in the electronic spectral function. In this study, we report the formation of polarons at the alkali-dosed MoSe2 surface, where Rashba-like spin splitting of the conduction band states is caused by an inversion-symmetry breaking electric field. In addition, we observed a crossover from phonon-like to plasmon-like polaronic spectral features at the MoSe2 surface with increasing doping. Our findings support the concept of electron-phonon coupling-mediated superconductivity in electron-doped layered TMDC materials, as observed using ionic liquid gating technology. Furthermore, the discovered spin-splitting at the Fermi level could offer crucial experimental validation for theoretical models of Ising-type superconductivity in these materials.

Influence of Edges and Interlayer Electron-phonon Coupling in WS2/h-BN Heterostructure

The semiconducting layered transition metal dichalcogenides (e.g., WS2) are excellent candidates for the realization of optoelectronic and nanophotonic applications on account of their band gap tunability, high binding energy and oscillator strength of the excitons, strong light-matter interaction, appreciable charge carrier mobility, and valleytronic properties. However, the photoluminescence (PL) emissions are reported to show a nonuniform spatial distribution, with the edges emitting features like defect-bound excitons and biexcitons at low temperatures in addition to the typical excitons and trions. The appearance of these additional PL features has been shown in the literature to have a strong dependence on the presence of S-vacancies and excess charge carriers. We demonstrate an enhancement of the defect-bound excitons and biexcitons by creating a heterostructure of WS2 with h-BN where the coupling between the charge carriers in WS2 with the polar phonons in h-BN governs the enhancement. Furthermore, we have performed a comprehensive resonant Raman study with varying polarization and magnetic field which not only confirms the presence of electron-phonon coupling in WS2/h-BN heterostructure, it further demonstrates a thermally induced differential resonance behavior with the excitonic level and the defect-induced midgap states (due to S-vacancies at the edge of WS2) exhibited by a dome-shaped behavior of the Raman intensities with temperature for the normal and defect-induced phonon modes. The defect-bound Raman modes exhibit maximum resonance at ∼240 K while normal Raman modes show at ∼280 K owing to a thermal variation of the electronic states.

Precision-controlled ultrafast electron microscope platforms. A case study: Multiple-order coherent phonon dynamics in 1T-TaSe2 probed at 50 fs-10 fm scales

We report on the first detailed beam tests attesting the fundamental principle behind the development of high-current-efficiency ultrafast electron microscope systems where a radio frequency (RF) cavity is incorporated as a condenser lens in the beam delivery system. To allow for the experiment to be carried out with a sufficient resolution to probe the performance at the emittance floor, a new cascade loop RF controller system is developed to reduce the RF noise floor. Temporal resolution at 50 fs in full-width-at-half-maximum and detection sensitivity better than 1% are demonstrated on exfoliated 1T-TaSe2 system under a moderate repetition rate. To benchmark the performance, multi-terahertz edge-mode coherent phonon excitation is employed as the standard candle. The high temporal resolution and the significant visibility to very low dynamical contrast in diffraction signals via high-precision phase-space manipulation give strong support to the working principle for the new high-brightness femtosecond electron microscope systems.

Ultrafast acousto-optic modulation at the near-infrared spectral range by interlayer vibrations

The acousto-optic modulation over a broad near-infrared (NIR) spectrum with high speed, excellent integrability, and relatively simple scheme is crucial for the application of next-generation opto-electronic and photonic devices. This study aims to experimentally demonstrate ultrafast acousto-optic phenomena in the broad NIR spectral range of 0.77-1.1 eV (1130-1610 nm). Hundreds of GHz of light modulation are revealed in an all-optical configuration by combining ultrafast optical spectroscopy and light-sound conversion in 10-20 nm-thick bismuth selenide (Bi2Se3) van der Waals thin films. The modified optical transition energy and the line shape in the NIR band indicate phonon-photon interactions, resulting in a modulation of optical characteristics by the photoexcited interlayer vibrations in Bi2Se3. This all-optical, ultrafast acousto-optic modulation approach may open avenues for next-generation nanophotonic applications, including optical communications and processing, due to the synergistic combination of large-area capability, high photo-responsivity, and frequency tunability in the NIR spectral range.

Biexciton and Singlet Trion Upconvert Exciton Photoluminescence in a MoSe2 Monolayer Supported by Acoustic and Optical K-Valley Phonons

Transition metal dichalcogenide monolayers represent unique platforms for studying both electronic and phononic interactions as well as intra- and intervalley exciton complexes. Here, we investigate the upconversion of exciton photoluminescence in MoSe2 monolayers. Within the nominal transparency window of MoSe2 the exciton emission is enhanced for resonantly addressing the spin-singlet negative trion and neutral biexciton at a few tens of meV below the neutral exciton transition. We identify that the A'1 optical phonon at the K valley provides the energy gain in the upconversion process at the trion resonance, while ZA(K) phonons with their spin- and valley-switching properties support the biexciton driven upconversion of the exciton emission. Interestingly, the latter upconversion process yields unpolarized exciton photoluminescence, while the former also leads to circularly polarized emission. Our study highlights high-order exciton complexes interacting with optical and acoustic K-valley phonons and upconverting light into the bright exciton.

Vibrational Dichroism of Chiral Valley Phonons

Valley degrees of freedom in transition metal dichalcogenides thoroughly influence electron-phonon coupling and its nonequilibrium dynamics. We conducted a first-principles study of the quantum kinetics of chiral phonons following valley-selective carrier excitation with circularly polarized light. Our numerical investigations treat the ultrafast dynamics of electrons and phonons on equal footing within a parameter-free ab initio framework. We report the emergence of valley-polarized phonon populations in monolayer MoS2 that can be selectively excited at either the K or K' valleys depending on the light helicity. The resulting vibrational state is characterized by a distinctive chirality, which lifts time-reversal symmetry of the lattice on transient time scales. We show that chiral valley phonons can further lead to fingerprints of vibrational dichroism detectable by ultrafast diffuse scattering and persist beyond 10 ps. The valley polarization of nonequilibrium phonon populations could be exploited as an information carrier, thereby extending the paradigm of valleytronics to the domain of vibrational excitations.

Localized coherent phonon generation in monolayer MoSe2 from ultrafast exciton trapping at shallow traps

We report spectroscopic evidence for the ultrafast trapping of band edge excitons at defects and the subsequent generation of defect-localized coherent phonons (CPs) in monolayer MoSe2. While the photoluminescence measurement provides signals of exciton recombination at both shallow and deep traps, our time-resolved pump-probe spectroscopy on the sub-picosecond time scale detects localized CPs only from the ultrafast exciton trapping at shallow traps. Based on occupation-constrained density functional calculations, we identify the Se vacancy and the oxygen molecule adsorbed on a Se vacancy as the atomistic origins of deep and shallow traps, respectively. Establishing the correlations between the defect-induced ultrafast exciton trapping and the generation of defect-localized CPs, our work could open up new avenues to engineer photoexcited carriers through lattice defects in two-dimensional materials.

Real-Time GW-Ehrenfest-Fan-Migdal Method for Nonequilibrium 2D Materials

Quantum simulations of photoexcited low-dimensional systems are pivotal for understanding how to functionalize and integrate novel two-dimensional (2D) materials in next-generation optoelectronic devices. First-principles predictions are extremely challenging due to the simultaneous interplay of light-matter, electron-electron, and electron-nuclear interactions. We here present an advanced ab initio many-body method that accounts for quantum coherence and non-Markovian effects while treating electrons and nuclei on equal footing, thereby preserving fundamental conservation laws like the total energy. The impact of this advancement is demonstrated through real-time simulations of the complex multivalley dynamics in a molybdenum disulfide (MoS2) monolayer pumped above gap. Within a single framework, we provide a parameter-free description of the coherent-to-incoherent crossover, elucidating the role of microscopic and collective excitations in the dephasing and thermalization processes.

Solution-Phase Synthesis of Vanadium Intercalated 1T'-WS2 with Tunable Electronic Properties

Metal ion intercalation into Group VI transition metal dichalcogenides enables control over their carrier transport properties. In this work, we demonstrate a low-temperature, solution-phase synthetic method to intercalate cationic vanadium complexes into bulk WS₂. Vanadium intercalation expands the interlayer spacing from 6.2 to 14.2 Å and stabilizes the 1T' phase of WS₂. Kelvin-probe force microscopy measurements indicate that vanadium binding in the van der Waals gap causes an increase in the Fermi level of 1T'-WS₂ by 80 meV due to hybridization of vanadium 3d orbitals with the conduction band of the TMD. As a result, the carrier type switches from p-type to n-type, and carrier mobility increases by an order of magnitude relative to the Li-intercalated precursor. Both the conductivity and thermal activation barrier for carrier transport are readily tuned by varying the concentration of VCl₃ during the cation-exchange reaction.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.