1
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Yan S, Yang J, Cai Y, Wang Y, Li S, Zhan X, Wang F, He J, Wang Z. Filter-Free UV Photodetectors Based on Unipolar Barrier Van der Waals α-In 2Se 3/h-BN Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401996. [PMID: 38829026 DOI: 10.1002/smll.202401996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 05/13/2024] [Indexed: 06/05/2024]
Abstract
Visible-blind ultraviolet (UV) light detection has a wide application range in scenes like space environment monitoring and medical imaging. To realize miniaturized UV detectors with high performance and high integration ability, new device structures without bulky light filters need to be developed based on advanced mechanisms. Here the unipolar barrier van der Waals heterostructure (UB-vdWH) photodetector is reported that realizes filter-free visible-blind UV detection with good stability, robustness, selectivity, and high detection performance. The UB-vdWH shows a responsivity of 2452 A W-1, a photo on-off ratio of 2.94 × 105 and a detectivity of 1.26 × 1015 Jones as a UV detector, owing to the intentionally designed barrier height that suppresses dark current and photoresponse to visible light during the transport process. The good performance remains intact during 104 test cycles or even under high temperatures, which proves the stability, and robustness of the UB-vdWH, thus shows the huge potential for a wider application range.
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Affiliation(s)
- Shan Yan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Sino-Danish Centre for Education and Research, Beijing, 100049, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yanrong Wang
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450000, P. R. China
| | - Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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2
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Hou X, Liu Y, Bai S, Yu S, Huang H, Yang K, Li C, Peng Z, Zhao X, Zhou X, Xu G, Long S. Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314249. [PMID: 38564779 DOI: 10.1002/adma.202314249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 02/29/2024] [Indexed: 04/04/2024]
Abstract
Detecting high-energy photons from the deep ultraviolet (DUV) to X-rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting high-energy photons. However, the implementation of highly sensitive and high-speed detectors based on WBG semiconductors has been a huge challenge due to the inevitable deep level traps and the lack of appropriate device structure engineering. Here, a sensitive and fast pyroelectric photoconductive diode (PPD), which couples the interface pyroelectric effect with the photoconductive effect based on tailored polycrystal Ga-rich GaOx (PGR-GaOx) Schottky photodiode, is first proposed. The PPD device exhibits ultrahigh detection performance for DUV and X-ray light. The responsivity for DUV light and sensitivity for X-ray are up to 104 A W-1 and 105 µC Gyair -1 cm-2, respectively. Especially, the interface pyroelectric effect induced by polar symmetry in the depletion region of the PGR-GaOx can significantly improve the response speed of the device by 105 times. Furthermore, the potential of the device is demonstrated for imaging enhancement systems with low power consumption and high sensitivity. This work fully excavates the potential of the pyroelectric effect for detectors and provides a novel design strategy to achieve sensitive and high-speed detectors.
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Affiliation(s)
- Xiaohu Hou
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Yan Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Shiyu Bai
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Shunjie Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Hong Huang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Kai Yang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Chen Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Zhixin Peng
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaolong Zhao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Xuanze Zhou
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Guangwei Xu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
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3
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Xi Z, Liu Z, Yan S, Liu M, Zhang JH, Guo X, Li L, Ma W, Li S, Yang L, Jiang M, Tang W. Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In xGa 1-x) 2O 3 Solar-Blind Photodetectors. J Phys Chem Lett 2024:4906-4912. [PMID: 38683690 DOI: 10.1021/acs.jpclett.4c00812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (InxGa1-x)2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.99 eV is achieved by varying the In-doping content. Alloy-based metal-semiconductor-metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.
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Affiliation(s)
- Zhaoying Xi
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Zeng Liu
- School of Electronic Information Engineering, Inner Mongolia University, Hohhot, Inner Mongolia 010021, People's Republic of China
| | - Sihan Yan
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Maosheng Liu
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 211106, People's Republic of China
| | - Jia-Han Zhang
- School of Electronic Information Engineering, Inner Mongolia University, Hohhot, Inner Mongolia 010021, People's Republic of China
| | - Xin Guo
- School of Information and Communication Engineering, North University of China, Taiyuan, Shanxi 030051, People's Republic of China
| | - Lei Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Wanyu Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Shan Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Lili Yang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Mingming Jiang
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 211106, People's Republic of China
| | - Weihua Tang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
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4
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Wu C, Zhang G, Jia J, Hu H, Wu F, Wang S, Guo D. Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga 2O 3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application. J Phys Chem Lett 2024; 15:3828-3834. [PMID: 38557063 DOI: 10.1021/acs.jpclett.4c00561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Ultrawide bandgap semiconductor β-Ga2O3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, β-Ga2O3 epitaxial films were deposited on sapphire substrates with different orientations, and the mechanisms underlying the anisotropy of these epitaxial films were investigated. Compared to c-plane sapphire, the lattice mismatch between m- or r-plane sapphire and β-Ga2O3 is more pronounced, disrupting the rotational symmetry of the films and rendering them anisotropic. Thanks to the improved anisotropy, the polarization ratio of the photodetector based on β-Ga2O3 films grown on r-plane substrates is 0.24, nearly ten times higher than that on c-plane substrates. Finally, by utilizing these polarization-sensitive photodetectors, we developed an encrypted solar-blind ultraviolet optical communication system. Our work provides a new approach to facilitate the fabrication and application of high-performance polarization-sensitive solar-blind photodetectors.
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Affiliation(s)
- Chao Wu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Guang Zhang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Jinhua Jia
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Haizheng Hu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Fengmin Wu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Shunli Wang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Daoyou Guo
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
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5
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Cheng Y, Guo X, Shi Y, Pan L. Recent advance of high-quality perovskite nanostructure and its application in flexible photodetectors. NANOTECHNOLOGY 2024; 35:242001. [PMID: 38467065 DOI: 10.1088/1361-6528/ad3251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Accepted: 03/11/2024] [Indexed: 03/13/2024]
Abstract
Flexible photodetectors (PDs) have garnered increasing attention for their potential applications in diverse fields, including weather monitoring, smart robotics, smart textiles, electronic eyes, wearable biomedical monitoring devices, and so on. Notably, perovskite nanostructures have emerged as a promising material for flexible PDs due to their distinctive features, such as a large optical absorption coefficient, tunable band gap, extended photoluminescence decay time, high carrier mobility, low defect density, long exciton diffusion lengths, strong self-trapped effect, good mechanical flexibility, and facile synthesis methods. In this review, we first introduce various synthesis methods for perovskite nanostructures and elucidate their corresponding optical and electrical properties, encompassing quantum dots, nanocrystals, nanowires, nanobelts, nanosheets, single-crystal thin films, polycrystalline thin films, and nanostructured arrays. Furthermore, the working mechanism and key performance parameters of optoelectronic devices are summarized. The review also systematically compiles recent advancements in flexible PDs based on various nanostructured perovskites. Finally, we present the current challenges and prospects for the development of perovskite nanostructures-based flexible PDs.
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Affiliation(s)
- Yan Cheng
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Xin Guo
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Yi Shi
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Lijia Pan
- The Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
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6
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Chen Y, Zhu Q, Sun J, Sun Y, Hanagata N, Xu M. A high-performance broadband phototransistor array of a PdSe 2/SOI Schottky junction. NANOSCALE 2024; 16:6078-6086. [PMID: 38441960 DOI: 10.1039/d3nr06643f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
There is great interest in the incorporation of novel two-dimensional materials into Si-based technologies to realize multifunctional optoelectronic devices via heterogeneous integration. Here, we demonstrate a gate-tunable, self-driven, high-performance broadband phototransistor array based on a PdSe2/Si Schottky junction, which is fabricated by pre-depositing a semi-metallic PdSe2 film on a SOI substrate. In addition, thanks to the zero bandgap of the PdSe2 material and the PdSe2/Si vertical heterostructure, the prepared phototransistor exhibits pronounced photovoltaic properties in a wide spectral range from ultraviolet to near-infrared. The responsivity, specific detectivity and response time of the device at the incident light wavelength of 808 nm are 1.15 A W-1, 9.39 × 1010 Jones, and 27.1/40.3 μs, respectively, which are better than those of previously reported PdSe2-based photodetectors. The photoelectric performance can be further improved by applying an appropriate gate voltage to the phototransistor and the responsivity of the device increases to 1.61 A W-1 at VG = 5 V. We demonstrate the excellent imaging capabilities of a 4 × 4 array image sensor using PdSe2/SOI phototransistors under 375 nm, 532 nm, and 808 nm laser sources.
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Affiliation(s)
- Yexin Chen
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
| | - Qinghai Zhu
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
| | - Jiabao Sun
- College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Yijun Sun
- College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Nobutaka Hanagata
- Research Center for Functional Materials and Nanotechnology Innovation Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Mingsheng Xu
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
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Zhou Y, Zhang Z, Yang X, Liu T, He G, Lin C, Huang WT, Liu H, Wang Y, Wang Y, Xiang Z, Shan CX. Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy. ACS NANO 2024; 18:7610-7617. [PMID: 38426715 DOI: 10.1021/acsnano.4c00090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. Ga2O3, characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped β-Ga2O3 microbelts (MBs). These MBs, which have a conductive core surrounded by a high-resistivity depletion surface layer resulting from the segregation of Sn and oxygen, are woven into a grid structure. Each intersection of the MBs functions as a photodetector pixel, with the intersecting MBs serving as the output electrodes of the pixel. This design simplifies the readout circuit for the photodetector array. The solar-blind photodetector array demonstrates superior solar-blind detection performance, including a dark current of 0.5 pA, a response time of 38.8 μs, a light/dark current ratio of 108, and a responsivity of 300 A/W. This research may provide a feasible strategy for the fabrication of photodetector arrays, thus pushing forward the application of photodetectors in imaging.
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Affiliation(s)
- Ying Zhou
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Zhenfeng Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xun Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Gaohang He
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Chaonan Lin
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wen-Tao Huang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Hang Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yong Wang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yanan Wang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - ZhiYu Xiang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Liu Z, Li J, Liu S, Yuan Y, Chen A, Yu H, Wang S, Ding J, Fang H. Suppressing Carrier Recombination in BiVO 4/PEDOT:PSS Heterojunction for High-Performance Photodetector. J Phys Chem Lett 2024; 15:2476-2484. [PMID: 38407931 DOI: 10.1021/acs.jpclett.4c00148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/27/2024]
Abstract
The organic-inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.
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Affiliation(s)
- Zhe Liu
- Center for Advanced Laser Technology, Hebei University of Technology & Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jiaqi Li
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shaojie Liu
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yao Yuan
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ainong Chen
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Haolin Yu
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shouxiong Wang
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jie Ding
- Center for Advanced Laser Technology, Hebei University of Technology & Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
| | - Huajing Fang
- State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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9
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Min L, Sun H, Guo L, Wang M, Cao F, Zhong J, Li L. Frequency-selective perovskite photodetector for anti-interference optical communications. Nat Commun 2024; 15:2066. [PMID: 38453948 PMCID: PMC10920912 DOI: 10.1038/s41467-024-46468-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 02/28/2024] [Indexed: 03/09/2024] Open
Abstract
Free-space coupling, essential for various communication applications, often faces significant signal loss and interference from ambient light. Traditional methods rely on integrating complex optical and electronic systems, leading to bulkier and costlier communication equipment. Here, we show an asymmetric 2D-3D-2D perovskite structure device to achieve a frequency-selective photoresponse in a single device. By combining two electromotive forces of equal magnitude in the opposite directions, the device output is attenuated to zero under constant light illumination. Because these reverse photodiodes have different response speeds, the device only responds near a certain frequency, which can be tuned by manipulating the 2D perovskite components. The target device achieves an ultrafast response of 19.7/18.3 ns in the frequency-selective photoresponse range 0.8-9.7 MHz. This anti-interference photodetector can accurately transmit character and video data under strong light interference with a source intensity of up to 454 mW cm-2.
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Affiliation(s)
- Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China.
| | - Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Jun Zhong
- Institute of Functional Nano and Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China.
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10
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Jia H, Zhang R, Niu X, Zhang X, Zhou H, Liu X, Fang Z, Chang F, Guan BO, Qiu J. Enabling Broadband Solar-Blind UV Photodetection by a Rare-Earth Doped Oxyfluoride Transparent Glass-Ceramic. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309433. [PMID: 38225714 DOI: 10.1002/advs.202309433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 12/24/2023] [Indexed: 01/17/2024]
Abstract
Oxyfluoride transparent glass-ceramics (GC) are widely used as the matrix for rare-earth (RE) ions due to their unique properties such as low phonon energy, high transmittance, and high solubility for RE ions. Tb3+ doped oxyfluoride glasses exhibit a large absorption cross section for ultraviolet (UV) excitation, high stability, high photoluminescence quantum efficiency, and sensitive spectral conversion characteristics, making them promising candidate materials for use as the spectral converter in UV photodetectors. Herein, a Tb3+ doped oxyfluoride GC is developed by using the melt-quenching method, and the microstructure and optical properties of the GC sample are carefully investigated. By combining with a Si-based photo-resistor,a solar-blind UV detector is fabricated, which exhibits a significant photoelectric response with a broad detection range from 188 to 400 nm. The results indicate that the designed UV photodetector is of great significance for the development of solar-blind UV detectors.
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Affiliation(s)
- Hong Jia
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
- Longmen Laboratory of Luoyang, Luoyang, 471000, China
| | - Rui Zhang
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xuying Niu
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xian Zhang
- Department of Optoelectronics Science, Harbin Institute of Technology, Weihai, 264209, China
| | - Hui Zhou
- College of Physics and Electronic Information & Henan Key Laboratory of Electromagnetic Transformation and Detection, Luoyang Normal University, Luoyang, 471934, China
| | - Xiaofeng Liu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zaijin Fang
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Fei Chang
- Senba Sensing Technology Co., Ltd., NanYang, 473300, China
| | - Bai-Ou Guan
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Jianrong Qiu
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
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11
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Ding S, Chen K, Xiu X, Shao P, Xie Z, Tao T, Liu B, Chen P, Chen D, Zhang R, Zheng Y. β-Ga 2O 3nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors. NANOTECHNOLOGY 2024; 35:175205. [PMID: 38271740 DOI: 10.1088/1361-6528/ad22a6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 01/25/2024] [Indexed: 01/27/2024]
Abstract
Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically alignedβ-Ga2O3nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area ofβ-Ga2O3NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA W-1(32.04 mA W-1) and a high detectivity of 1.58 × 1011Jones (1.01 × 1011Jones) were achieved for theβ-Ga2O3NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.
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Affiliation(s)
- Shan Ding
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Kai Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Xiangqian Xiu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Peng Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
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12
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Lu C, Li M, Gao L, Zhang Q, Zhu M, Lyu X, Wang Y, Liu J, Liu P, Wang L, Tao H, Song J, Ji A, Li P, Gu L, Cao Z, Lu N. Freestanding Crystalline β-Ga 2O 3 Flexible Membrane Obtained via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device. ACS NANO 2024. [PMID: 38335925 DOI: 10.1021/acsnano.3c10025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Wearable and flexible β-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible β-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline β-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible β-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid β-Ga2O3 film-based devices. Moreover, based on the transferred β-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/β-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible β-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.
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Affiliation(s)
- Chao Lu
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mengcheng Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiangyu Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Yuqian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jin Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Pengyu Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huayu Tao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Jiayi Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Ailing Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Peigang Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zexian Cao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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13
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Chen W, Wang D, Wang W, Kang Y, Liu X, Fang S, Li L, Luo Y, Liang K, Liu Y, Luo D, Memon MH, Yu H, Gu W, Liu Z, Hu W, Sun H. Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307779. [PMID: 38009587 DOI: 10.1002/adma.202307779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 10/15/2023] [Indexed: 11/29/2023]
Abstract
The operational principle of semiconductor devices critically relies on the band structures that ultimately govern their charge-transfer characteristics. Indeed, the precise orchestration of band structure within semiconductor devices, notably at the semiconductor surface and corresponding interface, continues to pose a perennial conundrum. Herein, for the first time, this work reports a novel postepitaxy method: thickness-tunable carbon layer decoration to continuously manipulate the surface band bending of III-nitride semiconductors. Specifically, the surface band bending of p-type aluminum-gallium-nitride (p-AlGaN) nanowires grown on n-Si can be precisely controlled by depositing different carbon layers as guided by theoretical calculations, which eventually regulate the ambipolar charge-transfer behavior between the p-AlGaN/electrolyte and p-AlGaN/n-Si interface in an electrolyte environment. Enabled by the accurate modulation of the thickness of carbon layers, a spectrally distinctive bipolar photoresponse with a controllable polarity-switching-point over a wide spectrum range can be achieved, further demonstrating reprogrammable photoswitching logic gates "XOR", "NAND", "OR", and "NOT" in a single device. Finally, this work constructs a secured image transmission system where the optical signals are encrypted through the "XOR" logic operations. The proposed continuous surface band tuning strategy provides an effective avenue for the development of multifunctional integrated-photonics systems implemented with nanophotonics.
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Affiliation(s)
- Wei Chen
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Danhao Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Weiyi Wang
- Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Yang Kang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Xin Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Liuan Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Yuanmin Luo
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Kun Liang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Yuying Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Dongyang Luo
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Muhammad Hunain Memon
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Huabin Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Wengang Gu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
| | - Zhenghui Liu
- Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China
| | - Wei Hu
- Hefei National Laboratory for Physical Science at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230027, P. R. China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, P. R. China
- Key Laboratory of Wireless-Optical Communications, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230029, P. R. China
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14
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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15
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Mou J, Ding J, Qin W. Modern Potentiometric Biosensing Based on Non-Equilibrium Measurement Techniques. Chemistry 2023; 29:e202302647. [PMID: 37733874 DOI: 10.1002/chem.202302647] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Revised: 09/20/2023] [Accepted: 09/21/2023] [Indexed: 09/23/2023]
Abstract
Modern potentiometric sensors based on polymeric membrane ion-selective electrodes (ISEs) have achieved new breakthroughs in sensitivity, selectivity, and stability and have extended applications in environmental surveillance, medical diagnostics, and industrial analysis. Moreover, nonclassical potentiometry shows promise for many applications and opens up new opportunities for potentiometric biosensing. Here, we aim to provide a concept to summarize advances over the past decade in the development of potentiometric biosensors with polymeric membrane ISEs. This Concept article articulates sensing mechanisms based on non-equilibrium measurement techniques. In particular, we emphasize new trends in potentiometric biosensing based on attractive dynamic approaches. Representative examples are selected to illustrate key applications under zero-current conditions and stimulus-controlled modes. More importantly, fruitful information obtained from non-equilibrium measurements with dynamic responses can be useful for artificial intelligence (AI). The combination of ISEs with advanced AI techniques for effective data processing is also discussed. We hope that this Concept will illustrate the great possibilities offered by non-equilibrium measurement techniques and AI in potentiometric biosensing and encourage further innovations in this exciting field.
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Affiliation(s)
- Junsong Mou
- CAS Key Laboratory of Coastal Environmental Processes, and Ecological Remediation, Shandong Key Laboratory of Coastal Environmental Processes, YICCAS, Yantai Institute of Coastal Zone Research (YIC), Chinese Academy of Sciences (CAS), Yantai, 264003, Shandong, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jiawang Ding
- CAS Key Laboratory of Coastal Environmental Processes, and Ecological Remediation, Shandong Key Laboratory of Coastal Environmental Processes, YICCAS, Yantai Institute of Coastal Zone Research (YIC), Chinese Academy of Sciences (CAS), Yantai, 264003, Shandong, P. R. China
- Qingdao National Laboratory for Marine Science and Technology, Qingdao 266237, Shandong (P. R. China), Center for Ocean Mega-Science, Chinese Academy of Sciences, Qingdao, 266071, Shandong, P. R. China
| | - Wei Qin
- CAS Key Laboratory of Coastal Environmental Processes, and Ecological Remediation, Shandong Key Laboratory of Coastal Environmental Processes, YICCAS, Yantai Institute of Coastal Zone Research (YIC), Chinese Academy of Sciences (CAS), Yantai, 264003, Shandong, P. R. China
- Qingdao National Laboratory for Marine Science and Technology, Qingdao 266237, Shandong (P. R. China), Center for Ocean Mega-Science, Chinese Academy of Sciences, Qingdao, 266071, Shandong, P. R. China
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16
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Zhang Q, Dong D, Zhang T, Zhou T, Yang Y, Tang Y, Shen J, Wang T, Bian T, Zhang F, Luo W, Zhang Y, Wu Z. Over 5 × 10 3-Fold Enhancement of Responsivity in Ga 2O 3-Based Solar Blind Photodetector via Acousto-Photoelectric Coupling. ACS NANO 2023. [PMID: 38014834 DOI: 10.1021/acsnano.3c08938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
The emergence of the wide-band-gap semiconductor Ga2O3 has propelled it to the forefront of solar blind detection activity owing to its key features. Although various architectures and designs of Ga2O3-based solar blind photodetectors have been proposed, their performance still falls short of commercial standards. In this study, we demonstrate a method to enhance the performance of a simple metal-semiconductor-metal-structured Ga2O3-based solar blind photodetector by exciting acoustic surface waves. Specifically, we demonstrate that under a bias voltage of 100 mV and a radio frequency signal of 20 dBm, the responsivity and detectivity can increase from 2.78 to 1.65 × 104 A/W and from 8.35 × 1014 to 2.66 × 1016 jones, respectively, rivaling a commercial photomultiplier tube. The over 5 × 103-fold enhancement in responsivity could be attributed to the acousto-photoelectric coupling mechanism. Furthermore, since surface acoustic waves can also serve as signal receivers, such photodetectors offer the prospect of dual-mode detection. Our findings reveal a promising pathway for achieving high-performance Ga2O3-based electronics and optoelectronics.
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Affiliation(s)
- Qingyi Zhang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Dianmeng Dong
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Tao Zhang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Tianhong Zhou
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, People's Republic of China
| | - Yongtao Yang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Yuanjun Tang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Tiejun Wang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Taiyu Bian
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, People's Republic of China
| | - Fan Zhang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Wei Luo
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, People's Republic of China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
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17
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Wang R, Shao Z, Xu K, Zhi T, Gao C, Xue J, Wang J. GaN/Ga 2O 3 avalanche photodiodes with separate absorption and multiplication structure. OPTICS LETTERS 2023; 48:5651-5654. [PMID: 37910725 DOI: 10.1364/ol.505699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 10/07/2023] [Indexed: 11/03/2023]
Abstract
This article proposes a new, to the best of our knowledge, separate absorption and multiplication (SAM) APD based on GaN/β-Ga2O3 heterojunction with high gains. The proposed APD achieved a high gain of 1.93 × 104. We further optimized the electric field distribution by simulating different doping concentrations and thicknesses of the transition region, resulting in the higher avalanche gain of the device. Furthermore, we designed a GaN/β-Ga2O3 heterojunction instead of the single Ga2O3 homogeneous layer as the multiplication region. Owing to the higher hole ionization coefficient, the device offers up to a 120% improvement in avalanche gain reach to 4.24 × 104. We subsequently clearly elaborated on the working principle and gain mechanism of GaN/β-Ga2O3 SAM APD. The proposed structure is anticipated to provide significant guidance for ultraweak ultraviolet light detection.
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18
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Shao Z, Qu L, Cui M, Yao J, Gao F, Feng W, Lu H. Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:43994-44000. [PMID: 37672724 DOI: 10.1021/acsami.3c08077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
The exploration and development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity have far-reaching significance for versatile applications. Although In2O3 shows potential for UV detection due to good UV absorption and electrical transport properties, the poor wavelength selectivity impedes further application in VBUV PDs. Here, a self-powered photoelectrochemical-type (PEC) VBUV PD is demonstrated by using gallium-indium oxide alloys (Ga-In OAs). The self-powered Ga-In OAs-based PEC VBUV PDs exhibit good VBUV photodetection performance, including a high responsivity of 50.04 mA/W and a high detectivity of 6.03 × 1010 Jones under 254 nm light irradiation, a good wavelength selectivity (UV/visible light rejection ratio of 262.45), and a fast response time (0.45/0.38 s). The good self-powered VBUV detection performance of Ga-In OAs is attributed to the larger band gap and smaller charge-transfer resistance induced by alloy engineering, which not only suppresses the absorption of visible light but also accelerates interfacial charge transfer. Moreover, an underwater optical communication system is demonstrated by using the self-powered Ga-In OAs PEC VBUV PDs. This study demonstrates that alloy engineering is a powerful tool to improve the performance of In2O3-based PEC PDs, and Ga-In OAs have great application potential for underwater optoelectronic devices.
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Affiliation(s)
- Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Lihang Qu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jing Yao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Huiqing Lu
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
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19
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Xi Z, Liu Z, Yang L, Tang K, Li L, Shen G, Zhang M, Li S, Guo Y, Tang W. Comprehensive Study on Ultra-Wide Band Gap La 2O 3/ε-Ga 2O 3 p-n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40744-40752. [PMID: 37592828 DOI: 10.1021/acsami.3c07597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.
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Affiliation(s)
- Zhaoying Xi
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zeng Liu
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Lili Yang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
| | - Lei Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Gaohui Shen
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Maolin Zhang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Shan Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yufeng Guo
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Weihua Tang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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20
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Huang S, Lin J, Lin X, Wang Z, Xie Y, Chen X, Kong X, Zheng W, Hu Q. Application of Graphene-Combined Rare-Earth Oxide (Sm 2O 3) in Solar-Blind Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37649-37657. [PMID: 37490695 DOI: 10.1021/acsami.3c06695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Rare-earth oxide Sm2O3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 1011 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm2O3-based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.
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Affiliation(s)
- Shiya Huang
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Jun Lin
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Xiuyu Lin
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Zhao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yuanyu Xie
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Xiong Chen
- Organic Optoelectronics Engineering Research Center of Fujian's Universities, Fujian Jiangxia University, Fuzhou, Fujian 350002, China
| | - Xiangzeng Kong
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Qichang Hu
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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21
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Zhou F, Gong H, Xiao M, Ma Y, Wang Z, Yu X, Li L, Fu L, Tan HH, Yang Y, Ren FF, Gu S, Zheng Y, Lu H, Zhang R, Zhang Y, Ye J. An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics. Nat Commun 2023; 14:4459. [PMID: 37491528 PMCID: PMC10368629 DOI: 10.1038/s41467-023-40194-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 07/17/2023] [Indexed: 07/27/2023] Open
Abstract
Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.
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Affiliation(s)
- Feng Zhou
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Hehe Gong
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Ming Xiao
- Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, 24060, VA, USA
| | - Yunwei Ma
- Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, 24060, VA, USA
| | - Zhengpeng Wang
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Xinxin Yu
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Li Li
- Australian National Fabrication Facility ACT Node, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Lan Fu
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Hark Hoe Tan
- Australian National Fabrication Facility ACT Node, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Yi Yang
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Fang-Fang Ren
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Shulin Gu
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Youdou Zheng
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China
| | - Hai Lu
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China.
| | - Rong Zhang
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China.
| | - Yuhao Zhang
- Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, 24060, VA, USA.
| | - Jiandong Ye
- School of Electronic Science and Engineering, Nanjing University, 210008, Nanjing, China.
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22
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He H, Wu C, Hu H, Wang S, Zhang F, Guo D, Wu F. Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga 2O 3 Films through Plasma-Enhanced Technology. J Phys Chem Lett 2023:6444-6450. [PMID: 37433104 DOI: 10.1021/acs.jpclett.3c01368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge due to nitrogen's limited solubility in the material. In this study, a new method utilizing plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma was explored to enhance the nitrogen solubility in the material. By adjusting the N2 and O2 carrier gas ratio, we could tune the thin film's bandgap from 4.64 to 3.25 eV, leading to a reduction in the oxygen vacancy density from 32.89% to 19.87%. GaON-based photodetectors exhibited superior performance compared to that of Ga2O3-based devices, with a lower dark current and a faster photoresponse speed. This investigation presents an innovative approach to achieving high-performance devices based on Ga2O3.
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Affiliation(s)
- Huaile He
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Chao Wu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Haizheng Hu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Shunli Wang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
- Changshan Research Institute, Zhejiang Sci-Tech University, Changshan 324200, China
| | - Fabi Zhang
- School of Information and Communication, Guilin University of Electronic Technology, Guilin 541000, China
| | - Daoyou Guo
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
| | - Fengmin Wu
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310000, China
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23
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Zhang F, Zhang Y, Li L, Mou X, Peng H, Shen S, Wang M, Xiao K, Ji SH, Yi D, Nan T, Tang J, Yu P. Nanoscale multistate resistive switching in WO 3 through scanning probe induced proton evolution. Nat Commun 2023; 14:3950. [PMID: 37402709 DOI: 10.1038/s41467-023-39687-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 06/22/2023] [Indexed: 07/06/2023] Open
Abstract
Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO3, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.
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Affiliation(s)
- Fan Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, 100876, Beijing, China
| | - Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Linglong Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Xing Mou
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Kunhong Xiao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shuai-Hua Ji
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- Frontier Science Center for Quantum Information, 100084, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China.
- Frontier Science Center for Quantum Information, 100084, Beijing, China.
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24
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Zhang C, Dou W, Yang X, Zang H, Chen Y, Fan W, Wang S, Zhou W, Chen X, Shan C. X-ray Detectors Based on Ga 2O 3 Microwires. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4742. [PMID: 37445057 DOI: 10.3390/ma16134742] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 06/05/2023] [Accepted: 06/09/2023] [Indexed: 07/15/2023]
Abstract
X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga2O3 microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 102 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga2O3 X-ray detectors to date. These findings offer a promising new direction for the design of Ga2O3-based X-ray detectors.
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Affiliation(s)
- Chongyang Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wenjie Dou
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xun Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Huaping Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yancheng Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wei Fan
- Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
| | - Shaoyi Wang
- Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
| | - Weimin Zhou
- Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
| | - Xuexia Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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25
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Yang H, Cheng TH, Xin Q, Liu Y, Feng HY, Luo F, Mu W, Jia Z, Tao X. Efficient Suppression of Persistent Photoconductivity in β-Ga 2O 3-Based Photodetectors with Square Nanopore Arrays. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37368844 DOI: 10.1021/acsami.3c05265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
In this work, square nanopore arrays were developed on the surface of β-Ga2O3 microflakes using focused ion beam (FIB) etching, and solar-blind photodetectors (PDs) were fabricated based on the β-Ga2O3 microflakes with square nanopore arrays. The β-Ga2O3 microflake-based device was transformed from a gate voltage depletion mode to an oxygen depletion mode by FIB etching. The developed device exhibited excellent solar-blind PD performance with extremely high responsivity (1.8 × 105 at 10 V), detectivity (3.4 × 1018 Jones at 10 V), and light-to-dark ratio (9.3 × 108 at 5 V) as well as good repeatability and excellent stability. The intrinsic mechanism responsible for this performance was then systematically discussed. This work opens up a new avenue for the fabrication of high-performance β-Ga2O3-based low-dimensional PDs with high reproducibility by employing the FIB etching process.
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Affiliation(s)
- Huarong Yang
- School of Microelectronics, Shandong University, Ji'nan 250100, China
| | - Tong-Huai Cheng
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Qian Xin
- School of Microelectronics, Shandong University, Ji'nan 250100, China
| | - Yiyuan Liu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China
| | - Hua Yu Feng
- School of Microelectronics, Shandong University, Ji'nan 250100, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Wenxiang Mu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China
| | - Zhitai Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China
- Shandong Research Institute of Industrial Technology, Jinan 250100, Shandong, China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
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26
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Rogalski A, Bielecki Z, Mikołajczyk J, Wojtas J. Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids. SENSORS (BASEL, SWITZERLAND) 2023; 23:s23094452. [PMID: 37177656 PMCID: PMC10181614 DOI: 10.3390/s23094452] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 04/26/2023] [Accepted: 04/28/2023] [Indexed: 05/15/2023]
Abstract
The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.
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Affiliation(s)
- Antoni Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Zbigniew Bielecki
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Janusz Mikołajczyk
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Jacek Wojtas
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
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Han Y, Wang Y, Xia D, Fu S, Gao C, Ma J, Xu H, Li B, Shen A, Liu Y. Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa 2 O 3 :N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method. SMALL METHODS 2023:e2300041. [PMID: 37096880 DOI: 10.1002/smtd.202300041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/23/2023] [Indexed: 05/03/2023]
Abstract
This work reports a high-detectivity solar-blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2 O3 /GaN p-i-n heterojunction. The i layer of βGa2 O3 with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole. X-ray diffractometershows that the transformation of GaN into βGa2 O3 with (-201) preferred orientation at temperature above 900 °C in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 µs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a reverse bias of -5 V, the photoresponsivity is 8.3 A W-1 with a high Ilight /Idark ratio of over 106 and a detectivity of ≈9 × 1014 Jones. The excellent performance of the device is attributed to 1) the continuous conduction band without a potential energy barrier, 2) the larger built-in potential in the heterojunction because of the downward shift of Fermi energy level in β-Ga2 O3 , and 3) an enhanced built-in electric field in the βGa2 O3 due to introducing p-type graphene with a high hole concentration of up to ≈1020 cm-3 .
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Affiliation(s)
- Yurui Han
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yuefei Wang
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Danyang Xia
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Shihao Fu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Chong Gao
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jiangang Ma
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Haiyang Xu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Bingsheng Li
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Aidong Shen
- Department of Electrical Engineering, The City College of New York, New York, NY, 10031, USA
| | - Yichun Liu
- Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China
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Yoon Y, Park S, Park T, Kim H, Kim K, Hong J. Enhanced Responsivity and Optoelectronic Properties of Self-Powered Solar-Blind Ag 2O/β-Ga 2O 3 Heterojunction-Based Photodetector with Ag:AZO Co-Sputtered Electrode. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1287. [PMID: 37049380 PMCID: PMC10096629 DOI: 10.3390/nano13071287] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 04/03/2023] [Accepted: 04/03/2023] [Indexed: 06/19/2023]
Abstract
A Ag:AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet photodetector based on a Ag2O/β-Ga2O3 heterojunction. The Ag:AZO electrode was fabricated by co-sputtering Ag and AZO heterogeneous targets using the structural characteristics of a Facing Targets Sputtering (FTS) system with two-facing targets, and the electrical, crystallographic, structural, and optical properties of the fabricated thin film were evaluated. A photodetector was fabricated and evaluated based on the research results that the surface roughness of the electrode can reduce the light energy loss by reducing the scattering and reflectance of incident light energy and improving the trapping phenomenon between interfaces. The thickness of the electrodes was varied from 20 nm to 50 nm depending on the sputtering time. The optoelectronic properties were measured under 254 nm UV-C light, the on/off ratio of the 20 nm Ag:AZO electrode with the lowest surface roughness was 2.01 × 108, and the responsivity and detectivity were 56 mA/W and 6.99 × 1011 Jones, respectively. The Ag2O/β-Ga2O3-based solar-blind photodetector with a newly fabricated top electrode exhibited improved response with self-powered characteristics.
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