Direct visualization of electronic transport in a quantum anomalous Hall insulator

Direct observation of chiral edge current at zero magnetic field in a magnetic topological insulator

The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. The van der Waals antiferromagnet MnBi2Te4 is theorized to be a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution. When gated to the charge neutral point, our device exhibits edge current, which flows unidirectionally on the odd-layer boundary both with vacuum and with the even-layers. The edge current chirality reverses with the magnetization of the bulk. Surprisingly, we find the edge channels coexist with finite bulk conduction even though the bulk chemical potential is in the band gap, suggesting their robustness under significant edge-bulk scattering. Our result establishes the existence of chiral edge currents in a topological antiferromagnet and offers an alternative for identifying QAH states.

Meandering conduction channels and the tunable nature of quantized charge transport

The discovery of the quantum Hall effect has established the foundation of the field of topological condensed matter physics. An amazingly accurate quantization of the Hall conductance, now enshrined in quantum metrology, is stable against any reasonable perturbation due to its topological protection. Conversely, the latter implies a form of censorship by concealing any local information from the observer. The spatial distribution of the current in a quantum Hall system is such a piece of information, which, thanks to spectacular recent advances, has now become accessible to experimental probes. It is an old question whether the original and intuitively compelling theoretical picture of the current, flowing in a narrow channel along the sample edge, is the physically correct one. Motivated by recent experiments locally imaging quantized current in a Chern insulator (Bi, Sb)[Formula: see text]Te[Formula: see text] heterostructure [Rosen et al., Phys. Rev. Lett. 129, 246602 (2022); Ferguson et al., Nat. Mater. 22, 1100-1105 (2023)], we theoretically demonstrate the possibility of a broad "edge state" generically meandering away from the sample boundary deep into the bulk. Further, we show that by varying experimental parameters one can continuously tune between the regimes with narrow edge states and meandering channels, all the way to the charge transport occurring primarily within the bulk. This accounts for various features observed in, and differing between, experiments. Overall, our findings underscore the robustness of topological condensed matter physics, but also unveil the phenomenological richness, hidden until recently by the topological censorship-most of which, we believe, remains to be discovered.

Mitigation of Device Heterogeneity in Graphene Hall Sensor Arrays Using Per-Element Backgate Tuning

Graphene Hall-effect magnetic field sensors (GHSs) exhibit high performance comparable to state-of-the-art commercial Hall sensors made from III-V semiconductors. Graphene is also amenable to CMOS-compatible fabrication processes, making GHSs attractive candidates for implementing magnetic sensor arrays for imaging fields in biosensing and scanning probe applications. However, their practical appeal is limited by response heterogeneity and drift, arising from the high sensitivity of two-dimensional (2D) materials to local device imperfections. To address this challenge, we designed a GHS array in which an individual backgate is added to each GHS, allowing the carrier density of each sensor to be electrostatically tuned independent of other sensors in the array. Compared to the constraints encountered when all devices are tuned with the same backgate, we expected that the flexibility afforded by individual tuning would allow for the array's sensitivity, uniformity, and reconfigurability to be enhanced. We fabricated an array of 16 GHSs, each with its own backgate terminal, and characterized the ability to modulate GHS carrier density and Hall sensitivity within CMOS-compatible voltage ranges. We then demonstrated that individual device tuning can be used to break the trade-off between device sensitivity and uniformity in the GHS array, allowing for enhancement of both objectives. Our results showed that GHS arrays exhibiting >30% variability under single-backgate operation could be compensated using individual tuning to achieve <2% variability with minimal impact on the array sensitivity.

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

The quantum anomalous Hall (QAH) insulator is a vital material for the investigation of emerging topological quantum effects, but its extremely low working temperature limits experiments. Apart from the temperature challenge, effective regulation of the topological state of QAH insulators is another crucial concern. Here, by first-principles calculations, we find a family of stable two-dimensional materials TlTiX (X = Si, Ge) are large-gap QAH insulators. Their extremely robust ferromagnetic (FM) ground states are determined by both the direct- and super-exchange FM coupling. In the absence of spin-orbit coupling (SOC), there exist a spin-polarized crossing point located at eachKandK' points, respectively. The SOC effect results in the spontaneous breaking ofC2symmetry and introduces a mass term, giving rise to a QAH state with sizable band gap. The tiny magnetocrystalline anisotropic energy (MAE) implies that an external magnetic field can be easily used to align magnetization deviating fromzdirection to thex-yplane, thereby leading to a transformation of the electronic state from the QAH state to the Weyl half semimetals state, which indicate monolayers TlTiX (X = Si, Ge) exhibit a giant magneto topological band effect. Finally, we examined the impact of stress on the band gap and MAE, which underlies the reasons for the giant magneto topological band effect attributed to the crystal field. These findings present novel prospects for the realization of large-gap QAH states with the characteristic of easily modifiable topological states.