1
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Guo Y, Li J, Zhan X, Wang C, Li M, Zhang B, Wang Z, Liu Y, Yang K, Wang H, Li W, Gu P, Luo Z, Liu Y, Liu P, Chen B, Watanabe K, Taniguchi T, Chen XQ, Qin C, Chen J, Sun D, Zhang J, Wang R, Liu J, Ye Y, Li X, Hou Y, Zhou W, Wang H, Han Z. Van der Waals polarity-engineered 3D integration of 2D complementary logic. Nature 2024:10.1038/s41586-024-07438-5. [PMID: 38811731 DOI: 10.1038/s41586-024-07438-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 04/18/2024] [Indexed: 05/31/2024]
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.
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Affiliation(s)
- Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Chunwen Wang
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Min Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Biao Zhang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China
| | - Zirui Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Yueyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China
| | - Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Hai Wang
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yingjia Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Bo Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Runsheng Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
- Liaoning Academy of Materials, Shenyang, China
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
- Liaoning Academy of Materials, Shenyang, China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Liaoning Academy of Materials, Shenyang, China.
| | - Yanglong Hou
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Hanwen Wang
- Liaoning Academy of Materials, Shenyang, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
- Liaoning Academy of Materials, Shenyang, China.
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2
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Tan T, Guo H, Li Y, Wang Y, Cai W, Bao W, Zhou P, Feng X. Integration of MoS 2 Memtransistor Devices and Analogue Circuits for Sensor Fusion in Autonomous Vehicle Target Localization. ACS NANO 2024; 18:13652-13661. [PMID: 38751043 DOI: 10.1021/acsnano.4c00456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
In contemporary autonomous driving systems relying on sensor fusion, traditional digital processors encounter challenges associated with analogue-to-digital conversion and iterative vector-matrix operations, which are encumbered by limitations in terms of response time and energy consumption. In this study, we present an analogue Kalman filter circuit based on molybdenum disulfide (MoS2) memtransistor, designed to accelerate sensor fusion for precise localization in autonomous vehicle applications. The nonvolatile memory characteristics of the memtransistor allow for the storage of a fixed Kalman gain, which eliminates the data convergence and thus accelerates the processing speeds. Additionally, the modulation of multiple conductance states by the gate terminal enables fast adaptability to diverse autonomous driving scenarios by tuning multiple Kalman filter gains. Our proposed analogue Kalman filter circuit accurately estimates the position coordinates of target vehicles by fusing sensor data from light detection and ranging (LiDAR), millimeter-wave radar (Radar), and camera, and it successfully solves real-word problems in a signal-free crossroad intersection. Notably, our system achieves a 1000-fold improvement in energy efficiency compared to that of digital circuits. This work underscores the viability of a memtransistor for achieving fast, energy-efficient real-time sensing, and continuous signal processing in advanced sensor fusion technology.
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Affiliation(s)
- Tian Tan
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Haoyue Guo
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yida Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yafei Wang
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Weiwei Cai
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wenzhong Bao
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shaoxing Laboratory, Shaoxing 312300, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xuewei Feng
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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3
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Lu D, Chen Y, Lu Z, Ma L, Tao Q, Li Z, Kong L, Liu L, Yang X, Ding S, Liu X, Li Y, Wu R, Wang Y, Hu Y, Duan X, Liao L, Liu Y. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 2024:10.1038/s41586-024-07406-z. [PMID: 38778106 DOI: 10.1038/s41586-024-07406-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 04/10/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) semiconductors have shown great potential for monolithic three-dimensional (M3D) integration due to their dangling-bonds-free surface and the ability to integrate to various substrates without the conventional constraint of lattice matching1-10. However, with atomically thin body thickness, 2D semiconductors are not compatible with various high-energy processes in microelectronics11-13, where the M3D integration of multiple 2D circuit tiers is challenging. Here we report an alternative low-temperature M3D integration approach by van der Waals (vdW) lamination of entire prefabricated circuit tiers, where the processing temperature is controlled to 120 °C. By further repeating the vdW lamination process tier by tier, an M3D integrated system is achieved with 10 circuit tiers in the vertical direction, overcoming previous thermal budget limitations. Detailed electrical characterization demonstrates the bottom 2D transistor is not impacted after repetitively laminating vdW circuit tiers on top. Furthermore, by vertically connecting devices within different tiers through vdW inter-tier vias, various logic and heterogeneous structures are realized with desired system functions. Our demonstration provides a low-temperature route towards fabricating M3D circuits with increased numbers of tiers.
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Affiliation(s)
- Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yunxin Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.
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4
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Liu Y, Pan X, He Y, Guo B, Xu J. In Situ Monitoring and Tuning Multilayer Stacking of Polymer Lamellar Crystals in Solution with Aggregation-Induced Emission. NANO LETTERS 2024. [PMID: 38621356 DOI: 10.1021/acs.nanolett.3c03048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Many types of self-assembled 2D materials with fascinating morphologies and novel properties have been prepared and used in solution. However, it is still a challenge to monitor their in situ growth in solution and to control the number of layers in these materials. Here, we demonstrate that the aggregation-induced emission (AIE) effect can be applied for the in situ decoupled tracing of the lateral growth and multilayer stacking of polymer lamellar crystals in solution. Multilayer stacking considerably enhances the photoluminescence intensity of the AIE molecules sandwiched between two layers of lamellar crystals, which is 2.4 times that on the surface of monolayer crystals. Both variation of the self-seeding temperature of crystal seeds and addition of a trace amount of long polymer chains during growth can control multilayer lamellar stacking, which are applied to produce tunable fluorescent patterns for functional applications.
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Affiliation(s)
- Yang Liu
- Advanced Materials Laboratory of Ministry of Education, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China
| | - Xinyi Pan
- Advanced Materials Laboratory of Ministry of Education, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China
| | - Yaning He
- Advanced Materials Laboratory of Ministry of Education, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China
| | - Baohua Guo
- Advanced Materials Laboratory of Ministry of Education, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China
| | - Jun Xu
- Advanced Materials Laboratory of Ministry of Education, Department of Chemical Engineering, Tsinghua University, 100084 Beijing, China
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5
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Lee T, Jung KS, Seo S, Lee J, Park J, Kang S, Park J, Kang J, Ahn H, Kim S, Lee HW, Lee D, Kim KS, Kim H, Heo K, Kim S, Bae SH, Kang S, Kang K, Kim J, Park JH. Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2310015. [PMID: 38450812 DOI: 10.1002/adma.202310015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 01/31/2024] [Indexed: 03/08/2024]
Abstract
Negative-differential-resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multivalued logic computing. Nevertheless, conventional approaches aimed at attaining the NDR phenomenon involve intricate junction configurations and/or external doping processes in the channel region, impeding the progress of NDR devices to the circuit and system levels. Here, an NDR device is presented that incorporates a channel without junctions. The NDR phenomenon is achieved by introducing a metal-insulator-semiconductor capacitor to a portion of the channel area. This approach establishes partial potential barrier and well that effectively restrict the movement of hole and electron carriers within specific voltage ranges. Consequently, this facilitates the implementation of both a ternary inverter and a ternary static-random-access-memory, which are essential components in the development of multivalued logic computing technology.
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Affiliation(s)
- Taeran Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Kil-Su Jung
- Flash Memory Technology Design Team, Samsung Electronics Co. Ltd., Giheung, 17113, South Korea
- Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
| | - Junseo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Jihye Park
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Sumin Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Juncheol Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Hogeun Ahn
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Suhyun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Hae Won Lee
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
| | - Doyoon Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
| | - Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA
- Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA
| | - Keun Heo
- School of Semiconductor Science & Technology, Jeonbuk National University, Jeonju, 54896, South Korea
| | - Sunmean Kim
- School of Electronics Engineering College of IT Engineering, Kyungpook National University, Daegu, 41566, South Korea
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Missouri, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University in Saint Louis, Missouri, MO, 63130, USA
| | - Seokhyeong Kang
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
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6
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Wang F, Hu W. All-2D electronics for AI processing. NATURE MATERIALS 2023:10.1038/s41563-023-01720-z. [PMID: 38012389 DOI: 10.1038/s41563-023-01720-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
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