1
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Wu T, Liu Z, Lin H, Gao P, Shen W. Free-standing ultrathin silicon wafers and solar cells through edges reinforcement. Nat Commun 2024; 15:3843. [PMID: 38714695 PMCID: PMC11076549 DOI: 10.1038/s41467-024-48290-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 04/26/2024] [Indexed: 05/10/2024] Open
Abstract
Crystalline silicon solar cells with regular rigidity characteristics dominate the photovoltaic market, while lightweight and flexible thin crystalline silicon solar cells with significant market potential have not yet been widely developed. This is mainly caused by the brittleness of silicon wafers and the lack of a solution that can well address the high breakage rate during thin solar cells fabrication. Here, we present a thin silicon with reinforced ring (TSRR) structure, which is successfully used to prepare free-standing 4.7-μm 4-inch silicon wafers. Experiments and simulations of mechanical properties for both TSRR and conventional thin silicon structures confirm the supporting role of reinforced ring, which can share stress throughout the solar cell preparation and thus suppressing breakage rate. Furthermore, with the help of TSRR structure, an efficiency of 20.33% (certified 20.05%) is achieved on 28-μm silicon solar cell with a breakage rate of ~0%. Combining the simulations of optoelectrical properties for TSRR solar cell, the results indicate high efficiency can be realized by TSRR structure with a suitable width of the ring. Finally, we prepare 50 ~ 60-μm textured 182 × 182 mm2 TSRR wafers and perform key manufacturing processes, confirming the industrial compatibility of the TSRR method.
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Affiliation(s)
- Taojian Wu
- Institute of Solar Energy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
| | - Zhaolang Liu
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, China
| | - Hao Lin
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, China.
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
| | - Pingqi Gao
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Shenzhen, Guangdong, 518107, China.
- Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, China.
| | - Wenzhong Shen
- Institute of Solar Energy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China.
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2
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Hao Y. The dawn of ultralong flexible semiconductor fibers. Innovation (N Y) 2024; 5:100613. [PMID: 38590386 PMCID: PMC10999862 DOI: 10.1016/j.xinn.2024.100613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Accepted: 03/15/2024] [Indexed: 04/10/2024] Open
Affiliation(s)
- Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
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3
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Liu S, Wang X, Xu N, Li R, Ou H, Li S, Zhu Y, Ke Y, Zhan R, Chen H, Deng S. A Flexible and Wearable Photodetector Enabling Ultra-Broadband Imaging from Ultraviolet to Millimeter-Wave Regimes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401631. [PMID: 38654695 DOI: 10.1002/advs.202401631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 04/11/2024] [Indexed: 04/26/2024]
Abstract
Flexible and miniaturized photodetectors, offering a fast response across the ultraviolet (UV) to millimeter (MM) wave spectrum, are crucial for applications like healthcare monitoring and wearable optoelectronics. Despite their potential, developing such photodetectors faces challenges due to the lack of suitable materials and operational mechanisms. Here, the study proposes a flexible photodetector composed of a monolayer graphene connected by two distinct metal electrodes. Through the photothermoelectric effect, these asymmetric electrodes induce electron flow within the graphene channel upon electromagnetic wave illumination, resulting in a compact device with ultra-broadband and rapid photoresponse. The devices, with footprints ranging from 3 × 20 µm2 to 50 × 20 µm2, operate across a spectrum from 325 nm (UV) to 1.19 mm (MM) wave. They demonstrate a responsivity (RV) of up to 396.4 ± 5.1 mV W-1, a noise-equivalent power (NEP) of 8.6 ± 0.1 nW Hz- 0.5, and a response time as small as 0.8 ± 0.1 ms. This device facilitates direct imaging of shielded objects and material differentiation under simulated human body-wearing conditions. The straightforward device architecture, aligned with its ultra-broadband operational frequency range, is anticipated to hold significant implications for the development of miniaturized, wearable, and portable photodetectors.
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Affiliation(s)
- Shaojing Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Runli Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Hai Ou
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Shangdong Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yongsheng Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yanlin Ke
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Runze Zhan
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
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4
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Wang X, Zheng J, Ying Z, Li X, Zhang M, Guo X, Su S, Sun J, Yang X, Ye J. Ultrathin (∼30 µm) flexible monolithic perovskite/silicon tandem solar cell. Sci Bull (Beijing) 2024:S2095-9273(24)00256-1. [PMID: 38658235 DOI: 10.1016/j.scib.2024.04.022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 03/01/2024] [Accepted: 04/07/2024] [Indexed: 04/26/2024]
Abstract
The efficiency of rigid perovskite/silicon tandem solar cells has reached 33.9%. However, there has been no report on flexible perovskite/silicon tandem solar cells due to the challenge of overcoming the poor light absorption of ultrathin silicon bottom cells while maintaining their mechanical flexibility. Herein, we report the first demonstration of the perovskite/silicon tandem solar cell based on flexible ultrathin silicon. We show that reducing the wafer thicknesses and feature sizes of the light-trapping textures can significantly improve the flexibility of silicon without sacrificing light utilization. In addition, the capping of the perovskite top cells can further improve the device's mechanical durability by shifting the neutral plane toward the silicon surface that is prone to fracture. Finally, the resulting ultrathin (∼30 µm) flexible perovskite/silicon tandem solar cell achieves a certified stabilized efficiency of 22.8% with an extremely high power-to-weight ratio of 3.12 W g-1. Moreover, the flexible tandems exhibit remarkable bending durability, maintaining 98.2% of their initial performance after 3000 bending cycles at a radius of only 1 cm.
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Affiliation(s)
- Xinlong Wang
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingming Zheng
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiqin Ying
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Xin Li
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meili Zhang
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xuchao Guo
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shiqian Su
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jingsong Sun
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xi Yang
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Jichun Ye
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
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5
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Li Y, Ru X, Yang M, Zheng Y, Yin S, Hong C, Peng F, Qu M, Xue C, Lu J, Fang L, Su C, Chen D, Xu J, Yan C, Li Z, Xu X, Shao Z. Flexible silicon solar cells with high power-to-weight ratios. Nature 2024; 626:105-110. [PMID: 38297175 DOI: 10.1038/s41586-023-06948-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Accepted: 12/06/2023] [Indexed: 02/02/2024]
Abstract
Silicon solar cells are a mainstay of commercialized photovoltaics, and further improving the power conversion efficiency of large-area and flexible cells remains an important research objective1,2. Here we report a combined approach to improving the power conversion efficiency of silicon heterojunction solar cells, while at the same time rendering them flexible. We use low-damage continuous-plasma chemical vapour deposition to prevent epitaxy, self-restoring nanocrystalline sowing and vertical growth to develop doped contacts, and contact-free laser transfer printing to deposit low-shading grid lines. High-performance cells of various thicknesses (55-130 μm) are fabricated, with certified efficiencies of 26.06% (57 μm), 26.19% (74 μm), 26.50% (84 μm), 26.56% (106 μm) and 26.81% (125 μm). The wafer thinning not only lowers the weight and cost, but also facilitates the charge migration and separation. It is found that the 57-μm flexible and thin solar cell shows the highest power-to-weight ratio (1.9 W g-1) and open-circuit voltage (761 mV) compared to the thick ones. All of the solar cells characterized have an area of 274.4 cm2, and the cell components ensure reliability in potential-induced degradation and light-induced degradation ageing tests. This technological progress provides a practical basis for the commercialization of flexible, lightweight, low-cost and highly efficient solar cells, and the ability to bend or roll up crystalline silicon solar cells for travel is anticipated.
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Affiliation(s)
- Yang Li
- School of Energy and Power, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China
| | - Xiaoning Ru
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Miao Yang
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Yuhe Zheng
- School of Energy and Power, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China
| | - Shi Yin
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Chengjian Hong
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Fuguo Peng
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Minghao Qu
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Chaowei Xue
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Junxiong Lu
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Liang Fang
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China
| | - Chao Su
- School of Energy and Power, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China
| | - Daifen Chen
- School of Energy and Power, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China.
| | - Junhua Xu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China.
| | - Chao Yan
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, China.
| | - Zhenguo Li
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China.
| | - Xixiang Xu
- LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd, Xi'an, Shaanxi, China.
| | - Zongping Shao
- WA School of Mines: Minerals, Energy and Chemical Engineering (WASM-MECE), Curtin University, Perth, Western Australia, Australia.
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6
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Bendy silicon solar cells pack a powerful punch. Nature 2024:10.1038/d41586-023-04132-w. [PMID: 38297046 DOI: 10.1038/d41586-023-04132-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
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7
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Musiienko A, Yang F, Gries TW, Frasca C, Friedrich D, Al-Ashouri A, Sağlamkaya E, Lang F, Kojda D, Huang YT, Stacchini V, Hoye RLZ, Ahmadi M, Kanak A, Abate A. Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport. Nat Commun 2024; 15:316. [PMID: 38182589 PMCID: PMC10770130 DOI: 10.1038/s41467-023-44418-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 12/13/2023] [Indexed: 01/07/2024] Open
Abstract
The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material's effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10-3 to 103 cm2V-1s-1 and lifetimes varying between 10-9 and 10-3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.
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Affiliation(s)
- Artem Musiienko
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany.
| | - Fengjiu Yang
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Thomas William Gries
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
| | - Chiara Frasca
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
| | - Dennis Friedrich
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - Amran Al-Ashouri
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
| | - Elifnaz Sağlamkaya
- Disordered Semiconductor Optoelectronics, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany
| | - Felix Lang
- ROSI Freigeist Juniorgroup, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany
| | - Danny Kojda
- Department Dynamics and Transport in Quantum Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - Yi-Teng Huang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Valerio Stacchini
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Mahshid Ahmadi
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, The University of Tennessee Knoxville, Knoxville, TN, 37996, USA
| | - Andrii Kanak
- Laboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich, Switzerland
- Department of General Chemistry and Chemistry of Materials, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
| | - Antonio Abate
- Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany
- Department of Chemistry, University of Bielefeld, Bielefeld, Germany
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8
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Kauk-Kuusik M, Timmo K, Pilvet M, Muska K, Danilson M, Krustok J, Josepson R, Mikli V, Grossberg-Kuusk M. Cu 2ZnSnS 4 monograin layer solar cells for flexible photovoltaic applications. JOURNAL OF MATERIALS CHEMISTRY. A 2023; 11:23640-23652. [PMID: 38014362 PMCID: PMC10644763 DOI: 10.1039/d3ta04541b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 10/20/2023] [Indexed: 11/29/2023]
Abstract
Monograin powder technology is one possible path to developing sustainable, lightweight, flexible, and semi-transparent solar cells, which might be ideal for integration with various building and product elements. In recent years, the main research focus of monograin technology has centered around understanding the synthesis and optoelectronic properties of kesterite-type absorber materials. Among these, Cu2ZnSnS4 (CZTS) stands out as a promising solar cell absorber due to its favorable optical and electrical characteristics. CZTS is particularly appealing as its constituent elements are abundant and non-toxic, and it currently holds the record for highest power conversion efficiency (PCE) among emerging inorganic thin-film PV candidates. Despite its advantages, kesterite solar cells' PCE still falls significantly behind the theoretical maximum efficiency due to the large VOC deficit. This review explores various strategies aimed at improving VOC losses to enhance the overall performance of CZTS monograin layer solar cells. It was found that low-temperature post-annealing of CZTS powders reduced Cu-Zn disordering, increasing Eg by ∼100 meV and VOC values; however, achieving the optimal balance between ordered and disordered regions in kesterite materials is crucial for enhancing photovoltaic device performance due to the coexistence of ordered and disordered phases. CZTS alloying with Ag and Cd suppressed non-radiative recombination and increased short-circuit current density. Optimizing Ag content at 1% reduced CuZn antisite defects, but higher Ag levels compensated for acceptor defects, leading to reduced carrier density and decreased solar cell performance. Co-doping with Li and K resulted in an increased bandgap (1.57 eV) and improved VOC, but further optimization is required due to a relatively large difference between measured and theoretical VOC. Heterojunction modifications led to the most effective PCE improvement in CZTS-based solar cells, achieving an overall efficiency of 12.06%.
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Affiliation(s)
- Marit Kauk-Kuusik
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Kristi Timmo
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Maris Pilvet
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Katri Muska
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Mati Danilson
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Jüri Krustok
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Raavo Josepson
- Division of Physics, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Valdek Mikli
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Maarja Grossberg-Kuusk
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
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9
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Zhou Y, Ding T, Cheng Y, Huang Y, Wang W, Yang J, Xie L, Ho GW, He J. Non-planar dielectrics derived thermal and electrostatic field inhomogeneity for boosted weather-adaptive energy harvesting. Natl Sci Rev 2023; 10:nwad186. [PMID: 37565206 PMCID: PMC10411684 DOI: 10.1093/nsr/nwad186] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 06/05/2023] [Accepted: 06/25/2023] [Indexed: 08/12/2023] Open
Abstract
Weather-adaptive energy harvesting of omnipresent waste heat and rain droplets, though promising in the field of environmental energy sustainability, is still far from practice due to its low electrical output owing to dielectric structure irrationality and unscalability. Here we present atypical upcycling of ambient heat and raindrop energy via an all-in-one non-planar energy harvester, simultaneously increasing solar pyroelectricity and droplet-based triboelectricity by two-fold, in contrast to conventional counterparts. The delivered non-planar dielectric with high transmittance confines the solar irradiance onto a focal hotspot, offering transverse thermal field propagation towards boosted inhomogeneous polarization with a generated power density of 6.1 mW m-2 at 0.2 sun. Moreover, the enlarged lateral surface area of curved architecture promotes droplet spreading/separation, thus travelling the electrostatic field towards increased triboelectricity. These enhanced pyroelectric and triboelectric outputs, upgraded with advanced manufacturing, demonstrate applicability in adaptive sustainable energy harvesting on sunny, cloudy, night, and rainy days. Our findings highlight a facile yet efficient strategy, not only for weather-adaptive environmental energy recovery but also in providing key insights for spatial thermal/electrostatic field manipulation in thermoelectrics and ferroelectrics.
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Affiliation(s)
- Yi Zhou
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117581, Singapore
| | - Tianpeng Ding
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117581, Singapore
- School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yin Cheng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117581, Singapore
| | - Yi Huang
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wu Wang
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jianmin Yang
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Lin Xie
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ghim Wei Ho
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117581, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Jiaqing He
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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10
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Affiliation(s)
- Zhongbin B Li
- School of Remote Sensing and Information Engineering, Wuhan University, Wuhan, China
| | - Yongjun Zhang
- School of Remote Sensing and Information Engineering, Wuhan University, Wuhan, China
| | - Mengqiu Wang
- School of Remote Sensing and Information Engineering, Wuhan University, Wuhan, China
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