Deterministic radiative coupling of two semiconductor quantum dots to the optical mode of a photonic crystal nanocavity

Radiative coupling of two quantum emitters in arbitrary metallic nanostructures

We propose a general formalism beyond Weisskopf–Wigner approximation to efficiently calculate the coupling matrix element, evolution spectrum and population evolution of two quantum emitters in arbitrary metallic nanostructures. We demonstrate this formalism to investigate the radiative coupling and decay dynamics of two quantum emitters embedded in the two hot spots of three silver nano-spheroids. The vacuum Rabi oscillation in population evolution and the anti-crossing behavior in evolution spectrum show strong radiative coupling is realized in this metallic nanostructure despite its strong plasmon damping. Our formalism can serve as a flexible and efficient calculation tool to investigate the distant coherent interaction in a large variety of metallic nanostructures, and may be further developed to handle the cases for multiple quantum emitters and arbitrary dielectric–metallic hybrid nanostructures.

Synthesis of gadolinium-based Bi2S3 nanoparticles as cancer theranostics for dual-modality computed tomography/magnetic resonance imaging-guided photothermal therapy

Development of a safe, efficient and inexpensive multifunctional nanoplatform using a facile approach for multimodal imaging and therapeutic functions becomes more and more practically relevant but challenging. In this work, we demonstrated a novel nanocomposites (Bi₂S₃-Gd) for computed tomography (CT)/magnetic resonance (MR) imaging-guided photothermal therapy (PTT) for cancer in vitro. It was achieved by modification of hydrophobic Bi₂S₃ with a smart amphiphilic gadolinium-chelated ligand. The as-prepared nanocomposites composed of low-cost Bi₂S₃ and gadolinium complexes, showed high stability, excellent biocompatibility and good photostability. It was observed that Bi₂S₃-Gd nanocomposites can efficiently convert the NIR light into heat, and then suppressed the growth of tumor cells under NIR laser irradiation. Apart from serving as an effective photothermal agent, the as-prepared nanomaterials could induce an efficient contrast enhancement for both CT and MR imaging at low concentrations of Bi and Gd, rendering more accurate diagnosis. This work suggests the potential of Bi₂S₃-Gd nanomaterials as a novel multifunctional nanoplatform for CT/MR imaging-guided PTT for cancer.

Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination

Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy <100 nm and it can easily be applied to the realization of more complex nanostructures.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g⁽²⁾(0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Numerical optimization of the extraction efficiency of a quantum-dot based single-photon emitter into a single-mode fiber

We present a numerical method for the accurate and efficient simulation of strongly localized light sources, such as quantum dots, embedded in dielectric micro-optical structures. We apply the method in order to optimize the photon extraction efficiency of a single-photon emitter consisting of a quantum dot embedded into a multi-layer stack with further lateral structures. Furthermore, we present methods to study the robustness of the extraction efficiency with respect to fabrication errors and defects.