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Liu H, Qin Y, Chen HY, Wu J, Ma J, Du Z, Wang N, Zou J, Lin S, Zhang X, Zhang Y, Wang H. Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205047. [PMID: 36609920 DOI: 10.1002/adma.202205047] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2022] [Revised: 12/02/2022] [Indexed: 06/17/2023]
Abstract
Artificial neuronal devices are critical building blocks of neuromorphic computing systems and currently the subject of intense research motivated by application needs from new computing technology and more realistic brain emulation. Researchers have proposed a range of device concepts that can mimic neuronal dynamics and functions. Although the switching physics and device structures of these artificial neurons are largely different, their behaviors can be described by several neuron models in a more unified manner. In this paper, the reports of artificial neuronal devices based on emerging volatile switching materials are reviewed from the perspective of the demonstrated neuron models, with a focus on the neuronal functions implemented in these devices and the exploitation of these functions for computational and sensing applications. Furthermore, the neuroscience inspirations and engineering methods to enrich the neuronal dynamics that remain to be implemented in artificial neuronal devices and networks toward realizing the full functionalities of biological neurons are discussed.
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Affiliation(s)
- Hefei Liu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Yuan Qin
- Center for Power Electronics Systems, Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA
| | - Hung-Yu Chen
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jiangbin Wu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jiahui Ma
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Zhonghao Du
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Nan Wang
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Jingyi Zou
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Sen Lin
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Xu Zhang
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Yuhao Zhang
- Center for Power Electronics Systems, Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA
| | - Han Wang
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
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Bhalla P, MacDonald AH, Culcer D. Resonant Photovoltaic Effect in Doped Magnetic Semiconductors. PHYSICAL REVIEW LETTERS 2020; 124:087402. [PMID: 32167346 DOI: 10.1103/physrevlett.124.087402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 02/05/2020] [Indexed: 06/10/2023]
Abstract
The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.
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Affiliation(s)
- Pankaj Bhalla
- Beijing Computational Science Research Center, Beijing 100193, China
- School of Physics, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Dimitrie Culcer
- School of Physics, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia
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Jiang Z, Gao Y, He L, Song H, Zhou J, Zhu R. Helical edge states of topological photonic crystals with line defects. APPLIED OPTICS 2019; 58:2294-2299. [PMID: 31044934 DOI: 10.1364/ao.58.002294] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2018] [Accepted: 02/19/2019] [Indexed: 06/09/2023]
Abstract
Topologically protected edge states of honeycomb photonic crystals (PCs) have been extensively studied in recent years. Here we propose several optimized two-dimensional PC configurations with distinct line defects introduced by breaking the C6 symmetry of each topological lattice along the interfaces between two different topologies. The spin-flipping nature of the defect modes of these PC configurations is measured, which is expected to offer a novel realization mechanism of quantum spin Hall effect. The line defects can be treated as unidirectional air waveguides due to the characteristic topological properties. We manipulate the coupling effect of two helical edge states with tunable waveguide widths. It shows that the air waveguide has possibility for practical applications because of its suppression of backward scattering and considerable transmission efficiency.
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