1
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Li F, Li D, Wang C, Liu G, Wang R, Ren H, Tang Y, Wang Y, Chen Y, Liang K, Huang Q, Sawan M, Qiu M, Wang H, Zhu B. An artificial visual neuron with multiplexed rate and time-to-first-spike coding. Nat Commun 2024; 15:3689. [PMID: 38693165 PMCID: PMC11063071 DOI: 10.1038/s41467-024-48103-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Accepted: 04/17/2024] [Indexed: 05/03/2024] Open
Abstract
Human visual neurons rely on event-driven, energy-efficient spikes for communication, while silicon image sensors do not. The energy-budget mismatch between biological systems and machine vision technology has inspired the development of artificial visual neurons for use in spiking neural network (SNN). However, the lack of multiplexed data coding schemes reduces the ability of artificial visual neurons in SNN to emulate the visual perception ability of biological systems. Here, we present an artificial visual spiking neuron that enables rate and temporal fusion (RTF) coding of external visual information. The artificial neuron can code visual information at different spiking frequencies (rate coding) and enables precise and energy-efficient time-to-first-spike (TTFS) coding. This multiplexed sensory coding scheme could improve the computing capability and efficacy of artificial visual neurons. A hardware-based SNN with the RTF coding scheme exhibits good consistency with real-world ground truth data and achieves highly accurate steering and speed predictions for self-driving vehicles in complex conditions. The multiplexed RTF coding scheme demonstrates the feasibility of developing highly efficient spike-based neuromorphic hardware.
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Affiliation(s)
- Fanfan Li
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Dingwei Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Chuanqing Wang
- CenBRAIN Neurotech, School of Engineering, Westlake University, Hangzhou, China
| | - Guolei Liu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yingjie Tang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yan Wang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Kun Liang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Qi Huang
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
| | - Mohamad Sawan
- CenBRAIN Neurotech, School of Engineering, Westlake University, Hangzhou, China
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
| | - Min Qiu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China.
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China.
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China.
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China.
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2
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Galloni AR, Yuan Y, Zhu M, Yu H, Bisht RS, Wu CTM, Grienberger C, Ramanathan S, Milstein AD. Neuromorphic one-shot learning utilizing a phase-transition material. Proc Natl Acad Sci U S A 2024; 121:e2318362121. [PMID: 38630718 PMCID: PMC11047090 DOI: 10.1073/pnas.2318362121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Accepted: 03/25/2024] [Indexed: 04/19/2024] Open
Abstract
Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient AI and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing material phase transitions. Here, we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to fourfold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning in neuromorphic hardware.
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Affiliation(s)
- Alessandro R. Galloni
- Department of Neuroscience and Cell Biology, Robert Wood Johnson Medical School, Rutgers, The State University of New Jersey, Piscataway, NJ08854
- Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Yifan Yuan
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Minning Zhu
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, IN47907
| | - Ravindra S. Bisht
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Chung-Tse Michael Wu
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Christine Grienberger
- Department of Neuroscience, Brandeis University, Waltham, MA02453
- Department of Biology and Volen National Center for Complex Systems, Brandeis University, Waltham, MA02453
| | - Shriram Ramanathan
- Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ08854
| | - Aaron D. Milstein
- Department of Neuroscience and Cell Biology, Robert Wood Johnson Medical School, Rutgers, The State University of New Jersey, Piscataway, NJ08854
- Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway, NJ08854
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3
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Matrone GM, van Doremaele ERW, Surendran A, Laswick Z, Griggs S, Ye G, McCulloch I, Santoro F, Rivnay J, van de Burgt Y. A modular organic neuromorphic spiking circuit for retina-inspired sensory coding and neurotransmitter-mediated neural pathways. Nat Commun 2024; 15:2868. [PMID: 38570478 PMCID: PMC10991258 DOI: 10.1038/s41467-024-47226-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/26/2023] [Accepted: 03/25/2024] [Indexed: 04/05/2024] Open
Abstract
Signal communication mechanisms within the human body rely on the transmission and modulation of action potentials. Replicating the interdependent functions of receptors, neurons and synapses with organic artificial neurons and biohybrid synapses is an essential first step towards merging neuromorphic circuits and biological systems, crucial for computing at the biological interface. However, most organic neuromorphic systems are based on simple circuits which exhibit limited adaptability to both external and internal biological cues, and are restricted to emulate only specific the functions of an individual neuron/synapse. Here, we present a modular neuromorphic system which combines organic spiking neurons and biohybrid synapses to replicate a neural pathway. The spiking neuron mimics the sensory coding function of afferent neurons from light stimuli, while the neuromodulatory activity of interneurons is emulated by neurotransmitters-mediated biohybrid synapses. Combining these functions, we create a modular connection between multiple neurons to establish a pre-processing retinal pathway primitive.
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Affiliation(s)
- Giovanni Maria Matrone
- Microsystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, 5612AJ, Eindhoven, The Netherlands.
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA.
| | - Eveline R W van Doremaele
- Microsystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, 5612AJ, Eindhoven, The Netherlands
| | - Abhijith Surendran
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Zachary Laswick
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Sophie Griggs
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
| | - Gang Ye
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, PR China
| | - Iain McCulloch
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Francesca Santoro
- Tissue Electronics, Istituto Italiano di Tecnologia, Naples, 80125, Italy
- Institute of Biological Information Processing IBI-3 Bioelectronics, Forschungszentrum Juelich, 52428, Juelich, Germany
- Neuroelectronic Interfaces, Faculty of Electrical Engineering and IT, RWTH Aachen, 52074, Aachen, Germany
| | - Jonathan Rivnay
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Yoeri van de Burgt
- Microsystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, 5612AJ, Eindhoven, The Netherlands.
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Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Roy VAL. Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface. Adv Mater 2024:e2306254. [PMID: 38532608 DOI: 10.1002/adma.202306254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 03/06/2024] [Indexed: 03/28/2024]
Abstract
Aging and genetic-related disorders in the human brain lead to impairment of daily cognitive functions. Due to their neural synaptic complexity and the current limits of knowledge, reversing these disorders remains a substantial challenge for brain-computer interfaces (BCI). In this work, a solution is provided to potentially override aging and neurological disorder-related cognitive function loss in the human brain through the application of the authors' quantum synaptic device. To illustrate this point, a quantum topological insulator (QTI) Bi2Se2Te-based synaptic neuroelectronic device, where the electric field-induced tunable topological surface edge states and quantum switching properties make them a premier option for establishing artificial synaptic neuromodulation approaches, is designed and developed. Leveraging these unique quantum synaptic properties, the developed synaptic device provides the capability to neuromodulate distorted neural signals, leading to the reversal of age-related disorders via BCI. With the synaptic neuroelectronic characteristics of this device, excellent efficacy in treating cognitive neural dysfunctions through modulated neuromorphic stimuli is demonstrated. As a proof of concept, real-time neuromodulation of electroencephalogram (EEG) deduced distorted event-related potentials (ERP) is demonstrated by modulation of the synaptic device array.
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Affiliation(s)
- Dani S Assi
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
| | - Hongli Huang
- Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, U.K
| | - Vaithinathan Karthikeyan
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
| | - Vaskuri C S Theja
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Maria Merlyne de Souza
- Electronics and Electrical Engineering, The University of Sheffield, Sheffield, S3 7HQ, U.K
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong, China
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5
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Sun B, Chen Y, Zhou G, Cao Z, Yang C, Du J, Chen X, Shao J. Memristor-Based Artificial Chips. ACS Nano 2024; 18:14-27. [PMID: 38153841 DOI: 10.1021/acsnano.3c07384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.
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Affiliation(s)
- Bai Sun
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, People's Republic of China
| | - Zelin Cao
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junmei Du
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xiaoliang Chen
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jinyou Shao
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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6
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Choi S, Moon T, Wang G, Yang JJ. Filament-free memristors for computing. Nano Converg 2023; 10:58. [PMID: 38110639 PMCID: PMC10728429 DOI: 10.1186/s40580-023-00407-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 12/06/2023] [Indexed: 12/20/2023]
Abstract
Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.
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Affiliation(s)
- Sanghyeon Choi
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Taehwan Moon
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
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7
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Maity K, Dayen JF, Doudin B, Gumeniuk R, Kundys B. Single Wavelength Operating Neuromorphic Device Based on a Graphene-Ferroelectric Transistor. ACS Appl Mater Interfaces 2023; 15:55948-55956. [PMID: 37983566 DOI: 10.1021/acsami.3c10010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than 2 orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.
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Affiliation(s)
- Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Jean-François Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Roman Gumeniuk
- Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09596, Germany
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
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8
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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9
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Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Xi N, Li WJ, Roy VAL. Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. Adv Sci (Weinh) 2023; 10:e2300791. [PMID: 37340871 PMCID: PMC10460853 DOI: 10.1002/advs.202300791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/02/2023] [Indexed: 06/22/2023]
Abstract
Neuromorphic artificial intelligence systems are the future of ultrahigh performance computing clusters to overcome complex scientific and economical challenges. Despite their importance, the advancement in quantum neuromorphic systems is slow without specific device design. To elucidate biomimicking mammalian brain synapses, a new class of quantum topological neuristors (QTN) with ultralow energy consumption (pJ) and higher switching speed (µs) is introduced. Bioinspired neural network characteristics of QTNs are the effects of edge state transport and tunable energy gap in the quantum topological insulator (QTI) materials. With augmented device and QTI material design, top notch neuromorphic behavior with effective learning-relearning-forgetting stages is demonstrated. Critically, to emulate the real-time neuromorphic efficiency, training of the QTNs is demonstrated with simple hand gesture game by interfacing them with artificial neural networks to perform decision-making operations. Strategically, the QTNs prove the possession of incomparable potential to realize next-gen neuromorphic computing for the development of intelligent machines and humanoids.
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Affiliation(s)
- Dani S. Assi
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Hongli Huang
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaithinathan Karthikeyan
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaskuri C. S. Theja
- Materials Science and EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | | | - Ning Xi
- Industrial and Manufacturing Systems EngineeringThe University of Hong KongPokfulam RoadHong KongHong Kong
| | - Wen Jung Li
- Mechanical EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | - Vellaisamy A. L. Roy
- School of Science and TechnologyHong Kong Metropolitan UniversityHo Man TinHong KongHong Kong
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