1
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Weng Z, Zheng H, Li L, Lei W, Jiang H, Ang KW, Zhao Z. Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy-Efficient Neuromorphic Hardware. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304518. [PMID: 37752744 DOI: 10.1002/smll.202304518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 08/04/2023] [Indexed: 09/28/2023]
Abstract
Designing reliable and energy-efficient memristors for artificial synaptic arrays in neuromorphic computing beyond von Neumann architecture remains a challenge. Here, memristors based on emerging layered nickel phosphorus trisulfide (NiPS3 ) are reported that exhibit several favorable characteristics, including uniform bipolar nonvolatile switching with small operating voltage (<1 V), fast switching speed (< 20 ns), high On/Off ratio (>102 ), and the ability to achieve programmable multilevel resistance states. Through direct experimental evidence using transmission electron microscopy and energy dispersive X-ray spectroscopy, it is revealed that the resistive switching mechanism in the Ti/NiPS3 /Au device is related to the formation and dissolution of Ti conductive filaments. Intriguingly, further investigation into the microstructural and chemical properties of NiPS3 suggests that the penetration of Ti ions is accompanied by the drift of phosphorus-sulfur ions, leading to induced P/S vacancies that facilitate the formation of conductive filaments. Furthermore, it is demonstrated that the memristor, when operating in quasi-reset mode, effectively emulates long-term synaptic weight plasticity. By utilizing a crossbar array, multipattern memorization and multiply-and-accumulate (MAC) operations are successfully implemented. Moreover, owing to the highly linear and symmetric multiple conductance states, a high pattern recognition accuracy of ≈96.4% is demonstrated in artificial neural network simulation for neuromorphic systems.
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Affiliation(s)
- Zhengjin Weng
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Haofei Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Lingqi Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Wei Lei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Helong Jiang
- State Key Laboratory of Lake Science and Environment, Nanjing Institute of Geography and Limnology Chinese Academy of Sciences, Nanjing, 210008, China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Zhiwei Zhao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
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2
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Shcherbakov A, Synnatschke K, Bodnar S, Zerhoch J, Eyre L, Rauh F, Heindl MW, Liu S, Konecny J, Sharp ID, Sofer Z, Backes C, Deschler F. Solution-Processed NiPS 3 Thin Films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons. ACS NANO 2023. [PMID: 37220255 DOI: 10.1021/acsnano.3c01119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der Waals (vdW) antiferromagnets have been reported, which combine low-dimensional excitonic properties with complex spin-structure. While various methods for the fabrication of vdW 2D crystals exist, formation of large area and continuous thin films is challenging because of either limited scalability, synthetic complexity, or low opto-spintronic quality of the final material. Here, we fabricate centimeter-scale thin films of the van der Waals 2D antiferromagnetic material NiPS3, which we prepare using a crystal ink made from liquid phase exfoliation (LPE). We perform statistical atomic force microscopy (AFM) and scanning electron microscopy (SEM) to characterize and control the lateral size and number of layers through this ink-based fabrication. Using ultrafast optical spectroscopy at cryogenic temperatures, we resolve the dynamics of photoexcited excitons. We find antiferromagnetic spin arrangement and spin-entangled Zhang-Rice multiplet excitons with lifetimes in the nanosecond range, as well as ultranarrow emission line widths, despite the disordered nature of our films. Thus, our findings demonstrate scalable thin-film fabrication of high-quality NiPS3, which is crucial for translating this 2D antiferromagnetic material into spintronic and nanoscale memory devices and further exploring its complex spin-light coupled states.
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Affiliation(s)
- Andrii Shcherbakov
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Kevin Synnatschke
- School of Physics, Trinity College Dublin, The University of Dublin, Dublin 2, Ireland
- Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany
| | - Stanislav Bodnar
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Jonathan Zerhoch
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Lissa Eyre
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
- Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Ave, Cambridge CB3 0FA, United Kingdom
| | - Felix Rauh
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Markus W Heindl
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Shangpu Liu
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Jan Konecny
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Ian D Sharp
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Claudia Backes
- Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany
- Physical Chemistry of Nanomaterials, University of Kassel, Heinrich-Plett-Straße 40, 34132 Kassel, Germany
| | - Felix Deschler
- Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany
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3
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Li K, Yan M, Jin Y, Jin Y, Guo Y, Voloshina E, Dedkov Y. Dual Character of the Insulating State in the van der Waals Fe 1-xNi xPS 3 Alloyed Compounds. J Phys Chem Lett 2023; 14:57-65. [PMID: 36566431 DOI: 10.1021/acs.jpclett.2c03492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The electronic structure of the alloyed transition-metal phosphorus trichalcogenide van der Waals Fe1-xNixPS3 compounds is studied using X-ray absorption spectroscopy and resonant photoelectron spectroscopy combined with intensive density functional theory calculations. Our systematic spectroscopic and theoretical data demonstrate the strong localization of the Fe- and Ni-ions-derived electronic states that leads to the description of the spectroscopic data as belonging simultaneously to Mott-Hubbard and charge-transfer insulators. These findings reveal Fe1-xNixPS3 as unique layered compounds with dual character of the insulating state, pointing to the importance of these results for the description and understanding of the functionality of this class of materials in different applications.
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Affiliation(s)
- Kexin Li
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Mouhui Yan
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- State Key Laboratory of Advanced Special Steel & School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai200444, P. R. China
| | - Yukun Jin
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Yichen Jin
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Yefei Guo
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
| | - Elena Voloshina
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- Centre of Excellence ENSEMBLE3 Sp. z o.o., Wolczynska Str. 133, 01-919Warsaw, Poland
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195Berlin, Germany
| | - Yuriy Dedkov
- Department of Physics, Shanghai University, 99 Shangda Road, 200444Shanghai, P. R. China
- Centre of Excellence ENSEMBLE3 Sp. z o.o., Wolczynska Str. 133, 01-919Warsaw, Poland
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4
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Ran J, Zhang H, Fu S, Jaroniec M, Shan J, Xia B, Qu Y, Qu J, Chen S, Song L, Cairney JM, Jing L, Qiao SZ. NiPS 3 ultrathin nanosheets as versatile platform advancing highly active photocatalytic H 2 production. Nat Commun 2022; 13:4600. [PMID: 35933410 PMCID: PMC9357043 DOI: 10.1038/s41467-022-32256-6] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Accepted: 07/20/2022] [Indexed: 11/09/2022] Open
Abstract
High-performance and low-cost photocatalysts play the key role in achieving the large-scale solar hydrogen production. In this work, we report a liquid-exfoliation approach to prepare NiPS3 ultrathin nanosheets as a versatile platform to greatly improve the light-induced hydrogen production on various photocatalysts, including TiO2, CdS, In2ZnS4 and C3N4. The superb visible-light-induced hydrogen production rate (13,600 μmol h-1 g-1) is achieved on NiPS3/CdS hetero-junction with the highest improvement factor (~1,667%) compared with that of pure CdS. This significantly better performance is attributed to the strongly correlated NiPS3/CdS interface assuring efficient electron-hole dissociation/transport, as well as abundant atomic-level edge P/S sites and activated basal S sites on NiPS3 ultrathin nanosheets advancing hydrogen evolution. These findings are revealed by the state-of-art characterizations and theoretical computations. Our work for the first time demonstrates the great potential of metal phosphorous chalcogenide as a general platform to tremendously raise the performance of different photocatalysts.
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Affiliation(s)
- Jingrun Ran
- School of Chemical Engineering and Advanced Materials, University of Adelaide, Adelaide, SA 5005, Australia
| | - Hongping Zhang
- State Key Laboratory of Environmentally Friendly Energy Materials, Engineering Research Center of Biomass Materials (Ministry of Education), School of Materials Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, Sichuan, China
| | - Sijia Fu
- School of Chemical Engineering and Advanced Materials, University of Adelaide, Adelaide, SA 5005, Australia
| | - Mietek Jaroniec
- Department of Chemistry and Biochemistry & Advanced Materials and Liquid Crystal Institute, Kent State University, Kent, OH 44242, USA
| | - Jieqiong Shan
- School of Chemical Engineering and Advanced Materials, University of Adelaide, Adelaide, SA 5005, Australia
| | - Bingquan Xia
- School of Chemical Engineering and Advanced Materials, University of Adelaide, Adelaide, SA 5005, Australia
| | - Yang Qu
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education), School of Chemistry and Materials Science, International Joint Research Center for Catalytic Technology, Heilongjiang University, 150080, Harbin, P. R. China
| | - Jiangtao Qu
- Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006, Australia
| | - Shuangming Chen
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, 230029, Hefei, Anhui, P. R. China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, 230029, Hefei, Anhui, P. R. China
| | - Julie M Cairney
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Liqiang Jing
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education), School of Chemistry and Materials Science, International Joint Research Center for Catalytic Technology, Heilongjiang University, 150080, Harbin, P. R. China
| | - Shi-Zhang Qiao
- School of Chemical Engineering and Advanced Materials, University of Adelaide, Adelaide, SA 5005, Australia.
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5
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Ramos M, Marques-Moros F, Esteras DL, Mañas-Valero S, Henríquez-Guerra E, Gadea M, Baldoví JJ, Canet-Ferrer J, Coronado E, Calvo MR. Photoluminescence Enhancement by Band Alignment Engineering in MoS 2/FePS 3 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33482-33490. [PMID: 35839147 PMCID: PMC9335528 DOI: 10.1021/acsami.2c05464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 07/04/2022] [Indexed: 05/08/2023]
Abstract
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.
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Affiliation(s)
- Maria Ramos
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
| | | | - Dorye L. Esteras
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Samuel Mañas-Valero
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | | | - Marcos Gadea
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
| | - José J. Baldoví
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Josep Canet-Ferrer
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - M. Reyes Calvo
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
- Instituto
Universitario de Materiales de Alicante (IUMA), Universidad de Alicante, Alicante 03690, Spain
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6
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Zhao L, Lei S, Tang C, Tu Q, Rao L, Liao H, Zeng W, Xiao Y, Cheng B. Self-supported electrode based on two-dimensional NiPS3 for supercapacitor application. J Colloid Interface Sci 2022; 616:401-412. [DOI: 10.1016/j.jcis.2022.02.089] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Revised: 02/11/2022] [Accepted: 02/19/2022] [Indexed: 12/22/2022]
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7
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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8
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Wang F, Mathur N, Janes AN, Sheng H, He P, Zheng X, Yu P, DeRuiter AJ, Schmidt JR, He J, Jin S. Defect-mediated ferromagnetism in correlated two-dimensional transition metal phosphorus trisulfides. SCIENCE ADVANCES 2021; 7:eabj4086. [PMID: 34678059 PMCID: PMC8535790 DOI: 10.1126/sciadv.abj4086] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Accepted: 08/31/2021] [Indexed: 06/02/2023]
Abstract
Controlling the magnetic spin states of two-dimensional (2D) van der Waals (vdW) materials with strong electronic or magnetic correlation is important for spintronic applications but challenging. Crystal defects that are often present in 2D materials such as transition metal phosphorus trisulfides (MPS3) could influence their physical properties. Here, we report the effect of sulfur vacancies on the magnetic exchange interactions and spin ordering of few-layered vdW magnetic Ni1−xCoxPS3 nanosheets. Magnetic and structural characterization in corroboration with theoretical calculations reveal that sulfur vacancies effectively suppress the strong intralayer antiferromagnetic correlation, giving rise to a weak ferromagnetic ground state in Ni1−xCoxPS3 nanosheets. Notably, the magnetic field required to tune this ferromagnetic state (<300 Oe) is much lower than the value needed to tune a typical vdW antiferromagnet (> several thousand oersted). These findings provide a previously unexplored route for controlling competing correlated states and magnetic ordering by defect engineering in vdW materials.
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Affiliation(s)
- Fengmei Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - Nitish Mathur
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - Aurora N. Janes
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - Hongyuan Sheng
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - Peng He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Xueli Zheng
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Peng Yu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Andrew J. DeRuiter
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - J. R. Schmidt
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, WI 53706, USA
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9
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Rao T, Wang H, Zeng Y, Guo Z, Zhang H, Liao W. Phase Transitions and Water Splitting Applications of 2D Transition Metal Dichalcogenides and Metal Phosphorous Trichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2002284. [PMID: 34026429 PMCID: PMC8132069 DOI: 10.1002/advs.202002284] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Revised: 01/24/2021] [Indexed: 06/02/2023]
Abstract
2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic-scale thickness, direct bandgap, significant spin-orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water-splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications.
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Affiliation(s)
- Tingke Rao
- College of Electronic and Information EngineeringInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Huide Wang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Yu‐Jia Zeng
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Zhinan Guo
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Wugang Liao
- College of Electronic and Information EngineeringInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
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10
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Zhang Y, Fan T, Yang S, Wang F, Yang S, Wang S, Su J, Zhao M, Hu X, Zhang H, Zhai T. Recent Advances in 2D Layered Phosphorous Compounds. SMALL METHODS 2021; 5:e2001068. [PMID: 34927843 DOI: 10.1002/smtd.202001068] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2020] [Revised: 12/20/2020] [Indexed: 06/14/2023]
Abstract
2D layered phosphorous compounds (2D LPCs) have led to explosion of research interest in recent years. With the diversity of valence states of phosphorus, 2D LPCs exist in various material types and possess many novel physical and chemical properties. These properties, including widely adjustable range of bandgap, diverse electronic properties covering metal, semimetal, semiconductor and insulator, together with inherent magnetism and ferroelectricity at atomic level, render 2D LPCs greatly promising in the applications of electronics, spintronics, broad-spectrum optoelectronics, high-performance catalysts, and energy storage, etc. In this review, the recently research progress of 2D LPCs are presented in detail. First, the 2D LPCs are classified according to their elemental composition and the corresponding crystal structures are introduced, followed by their preparation methods. Then, the novel properties are summarized and the potential applications are discussed in detail. Finally, the conclusion and perspective of the promising 2D LPCs are discussed on the foundation of the latest research progress.
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Affiliation(s)
- Yue Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Taojian Fan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shuzhe Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Mei Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Han Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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11
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Yan M, Jin Y, Wu Z, Tsaturyan A, Makarova A, Smirnov D, Voloshina E, Dedkov Y. Correlations in the Electronic Structure of van der Waals NiPS 3 Crystals: An X-ray Absorption and Resonant Photoelectron Spectroscopy Study. J Phys Chem Lett 2021; 12:2400-2405. [PMID: 33661001 DOI: 10.1021/acs.jpclett.1c00394] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The electronic structure of high-quality van der Waals NiPS3 crystals was studied using near-edge X-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES) in combination with density functional theory (DFT) approach. The experimental spectroscopic methods, being element specific, allow one to discriminate between atomic contributions in the valence and conduction band density of states and give direct comparison with the results of DFT calculations. Analysis of the NEXAFS and ResPES data allows one to identify the NiPS3 material as a charge-transfer insulator. Obtained spectroscopic and theoretical data are very important for the consideration of possible correlated-electron phenomena in such transition-metal layered materials, where the interplay between different degrees of freedom for electrons defines their electronic properties, allowing one to understand their optical and transport properties and to propose further possible applications in electronics, spintronics, and catalysis.
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Affiliation(s)
- Mouhui Yan
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Yichen Jin
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Zhicheng Wu
- Department of Physics, Shanghai University, 200444 Shanghai, China
| | - Arshak Tsaturyan
- Institute of Physical and Organic Chemistry, Southern Federal University, 344090 Rostov on Don, Russia
| | - Anna Makarova
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
| | - Dmitry Smirnov
- Institut für Festkörper-und Materialphysik, Technische Universität Dresden, 01069 Dresden, Germany
| | - Elena Voloshina
- Department of Physics, Shanghai University, 200444 Shanghai, China
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
| | - Yuriy Dedkov
- Department of Physics, Shanghai University, 200444 Shanghai, China
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany
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12
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Li H, Wells N, Chong B, Xu B, Wei J, Yang B, Yang G. The layered cadmium phosphorus trichalcogenides nanosheet with anion mono-doping: A new candidate for solar-driven water splitting. Chem Eng Sci 2021. [DOI: 10.1016/j.ces.2020.116069] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
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13
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Ren Y, Qiao Z, Niu Q. Engineering Corner States from Two-Dimensional Topological Insulators. PHYSICAL REVIEW LETTERS 2020; 124:166804. [PMID: 32383951 DOI: 10.1103/physrevlett.124.166804] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Accepted: 04/08/2020] [Indexed: 06/11/2023]
Abstract
We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional Z_{2} topological insulators by applying an in-plane Zeeman field. The Zeeman field breaks the time-reversal symmetry and thus destroys the Z_{2} topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by the Zeeman field whereas the in-gap corner state at the intersection between two zigzag edges arises, which is independent of the field orientation. We further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.
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Affiliation(s)
- Yafei Ren
- ICQD, Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Zhenhua Qiao
- ICQD, Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qian Niu
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
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14
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Kumar R, Jenjeti RN, Sampath S. Two-Dimensional, Few-Layer MnPS 3 for Selective NO 2 Gas Sensing under Ambient Conditions. ACS Sens 2020; 5:404-411. [PMID: 31975587 DOI: 10.1021/acssensors.9b02064] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
In this study, two-dimensional few-layer MnPS3 is introduced as a selective and reversible NO2 gas sensor in dry nitrogen (N2) under ambient conditions. The solvent exfoliation technique is utilized to exfoliate bulk MnPS3 into a few layers, which are further assembled as thin films by the vacuum filtration method. The films are subsequently transferred onto a sensing device and used for NO2 sensing. Exfoliated MnPS3 shows excellent sensitivity toward NO2 gas with a low detection limit of a few tens of ppb at 25 °C. A sensitivity of 9530% is obtained at 35 ppm concentration of NO2 with the theoretical limit of detection calculated to be ∼9.5 ppb. The sensor is highly selective toward NO2 gas (with respect to interferents NO, NH3, H2, CO, CO2, C2H2, and O2) and is fully reversible under ambient conditions. The time constant is determined to be in the range of 30-160 s for adsorption and desorption processes. Raman spectroscopy reveals that the mechanism of sensing is based on charge transfer interactions between the sensor and analyte. This study opens up ways to fabricate gas sensors using few-layer metal phosphochalcogenides (MPX3).
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Affiliation(s)
- Rajat Kumar
- Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560012, India
| | - Ramesh Naidu Jenjeti
- Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560012, India
| | - S. Sampath
- Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560012, India
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15
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Yang J, Zhou Y, Guo Q, Dedkov Y, Voloshina E. Electronic, magnetic and optical properties of MnPX3 (X = S, Se) monolayers with and without chalcogen defects: a first-principles study. RSC Adv 2020; 10:851-864. [PMID: 35494474 PMCID: PMC9047969 DOI: 10.1039/c9ra09030d] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2019] [Accepted: 12/10/2019] [Indexed: 11/21/2022] Open
Abstract
Relative energy values (ΔE, in eV) as well as lattice parameters (in Å) for 3D MnPX3 (X = S, Se) in different magnetic states obtained with PBE + U + D2.
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Affiliation(s)
- Juntao Yang
- Department of Physics
- Shanghai University
- 200444 Shanghai
- P. R. China
- School of Science
| | - Yong Zhou
- Department of Physics
- Shanghai University
- 200444 Shanghai
- P. R. China
| | - Qilin Guo
- Department of Physics
- Shanghai University
- 200444 Shanghai
- P. R. China
| | - Yuriy Dedkov
- Department of Physics
- Shanghai University
- 200444 Shanghai
- P. R. China
| | - Elena Voloshina
- Department of Physics
- Shanghai University
- 200444 Shanghai
- P. R. China
- Institute of Physical and Organic Chemistry
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16
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Ningrum VP, Liu B, Wang W, Yin Y, Cao Y, Zha C, Xie H, Jiang X, Sun Y, Qin S, Chen X, Qin T, Zhu C, Wang L, Huang W. Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications. RESEARCH (WASHINGTON, D.C.) 2020; 2020:1768918. [PMID: 32637940 PMCID: PMC7321532 DOI: 10.34133/2020/1768918] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Accepted: 04/28/2020] [Indexed: 12/14/2022]
Abstract
The emergence of low-dimensional nanomaterials has brought revolutionized development of magnetism, as the size effect can significantly influence the spin arrangement. Since the first demonstration of truly two-dimensional magnetic materials (2DMMs) in 2017, a wide variety of magnetic phases and associated properties have been exhibited in these 2DMMs, which offer a new opportunity to manipulate the spin-based devices efficiently in the future. Herein, we focus on the recent progress of 2DMMs and heterostructures in the aspects of their structural characteristics, physical properties, and spintronic applications. Firstly, the microscopy characterization of the spatial arrangement of spins in 2D lattices is reviewed. Afterwards, the optical probes in the light-matter-spin interactions at the 2D scale are discussed. Then, particularly, we systematically summarize the recent work on the electronic and spintronic devices of 2DMMs. In the section of electronic properties, we raise several exciting phenomena in 2DMMs, i.e., long-distance magnon transport, field-effect transistors, varying magnetoresistance behavior, and (quantum) anomalous Hall effect. In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. At last, we also provide our perspectives on the current challenges and future expectations in this field, which may be a helpful guide for theorists and experimentalists who are exploring the optical, electronic, and spintronic properties of 2DMMs.
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Affiliation(s)
- Vertikasari P. Ningrum
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Bowen Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yao Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yi Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chenyang Zha
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hongguang Xie
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiaohong Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Yan Sun
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Sichen Qin
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Zhu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
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17
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Wang X, Song Z, Wen W, Liu H, Wu J, Dang C, Hossain M, Iqbal MA, Xie L. Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804682. [PMID: 30393917 DOI: 10.1002/adma.201804682] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2018] [Revised: 09/04/2018] [Indexed: 06/08/2023]
Abstract
Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few-layers and then become a large and important subfamily of two-dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long-range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase-transition materials have vast potential for use in new-concept and functional devices. Here, potential 2D phase-transition materials with CDWs and magnetic and dipole ordering, including transition metal dichalcogenides, transition metal halides, metal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced. The structures and experimental phase-transition properties are summarized for the bulk materials and some of the obtained monolayers. In addition, recent experimental progress on the synthesis and measurement of monolayers, such as 1T-TaS2 , CrI3 , and Cr2 Ge2 Te6 , is reviewed.
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Affiliation(s)
- Xinsheng Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhigang Song
- Department of Engineering, University of Cambridge, JJ Thomson Avenue, CB3 0FA, Cambridge, UK
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haining Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunhe Dang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Mongur Hossain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Muhammad Ahsan Iqbal
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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18
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Li H, Ruan S, Zeng YJ. Intrinsic Van Der Waals Magnetic Materials from Bulk to the 2D Limit: New Frontiers of Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900065. [PMID: 31069896 DOI: 10.1002/adma.201900065] [Citation(s) in RCA: 105] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 02/21/2019] [Indexed: 05/22/2023]
Abstract
2D van der Waals (vdW) magnets, which present intrinsic ferromagnetic/antiferromagnetic ground states at finite temperatures down to atomic-layer thicknesses, open a new horizon in materials science and enable the potential development of new spin-related applications. The layered structure of vdW magnets facilitates their atomic-layer cleavability and magnetic anisotropy, which counteracts spin fluctuations, thereby providing an ideal platform for theoretically and experimentally exploring magnetic phase transitions in the 2D limit. With reduced dimensions, the susceptibility of 2D magnets to a large variety of external stimuli also makes them more promising than their bulk counterpart in various device applications. Here, the current status of characterization and tuning of the magnetic properties of 2D vdW magnets, particularly the atomic-layer thickness, is presented. Various state-of-the-art optical and electrical techniques have been applied to reveal the magnetic states of 2D vdW magnets. Other emerging 2D vdW magnets and future perspectives on the stacking strategy are also given; it is believed that they will excite more intensive research and provide unprecedented opportunities in the field of spintronics.
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Affiliation(s)
- Hui Li
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Center for Advanced Material Diagnostic Technology, Shenzhen Technology University, Shenzhen, 518118, P. R. China
| | - Shuangchen Ruan
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Jia Zeng
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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