1
|
Xiao Z, Ren Z, Zhuge Y, Zhang Z, Zhou J, Xu S, Xu C, Dong B, Lee C. Multimodal In-Sensor Computing System Using Integrated Silicon Photonic Convolutional Processor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2408597. [PMID: 39468388 DOI: 10.1002/advs.202408597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2024] [Revised: 09/12/2024] [Indexed: 10/30/2024]
Abstract
Photonic integrated circuits offer miniaturized solutions for multimodal spectroscopic sensory systems by leveraging the simultaneous interaction of light with temperature, chemicals, and biomolecules, among others. The multimodal spectroscopic sensory data is complex and has huge data volume with high redundancy, thus requiring high communication bandwidth associated with high communication power consumption to transfer the sensory data. To circumvent this high communication cost, the photonic sensor and processor are brought into intimacy and propose a photonic multimodal in-sensor computing system using an integrated silicon photonic convolutional processor. A microring resonator crossbar array is used as the photonic processor to implement convolutional operation with 5-bit accuracy, validated through image edge detection tasks. Further integrating the processor with a photonic spectroscopic sensor, the in situ processing of multimodal spectroscopic sensory data is demonstrated, achieving the classification of protein species of different types and concentrations at various temperatures. A classification accuracy of 97.58% across 45 different classes is achieved. The multimodal in-sensor computing system demonstrates the feasibility of integrating photonic processors and photonic sensors to enhance the data processing capability of photonic devices at the edge.
Collapse
Affiliation(s)
- Zian Xiao
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yangyang Zhuge
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Zixuan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Jingkai Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Siyu Xu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Bowei Dong
- Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-02, Singapore, 138634, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China
- NUS Graduate School-Integrative Sciences and Engineering Programme(ISEP), National University of Singapore, Singapore, 119077, Singapore
| |
Collapse
|
2
|
Igarashi A, Abe M, Kuroiwa S, Ohashi K, Yamada H. Enhancement of Refractive Index Sensitivity Using Small Footprint S-Shaped Double-Spiral Resonators for Biosensing. SENSORS (BASEL, SWITZERLAND) 2023; 23:6177. [PMID: 37448026 DOI: 10.3390/s23136177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Revised: 07/03/2023] [Accepted: 07/04/2023] [Indexed: 07/15/2023]
Abstract
We demonstrate an S-shaped double-spiral microresonator (DSR) for detecting small volumes of analytes, such as liquids or gases, penetrating a microfluidic channel. Optical-ring resonators have been applied as label-free and high-sensitivity biosensors by using an evanescent field for sensing the refractive index of analytes. Enlarging the ring resonator size is a solution for amplifying the interactions between the evanescent field and biomolecules to obtain a higher refractive index sensitivity of the attached analytes. However, it requires a large platform of a hundred square millimeters, and 99% of the cavity area would not involve evanescent field sensing. In this report, we demonstrate the novel design of a Si-based S-shaped double-spiral resonator on a silicon-on-insulator substrate for which the cavity size was 41.6 µm × 88.4 µm. The proposed resonator footprint was reduced by 680 times compared to a microring resonator with the same cavity area. The fabricated resonator exposed more sensitive optical characteristics for refractive index biosensing thanks to the enhanced contact interface by a long cavity length of DSR structures. High quality factors of 1.8 × 104 were demonstrated for 1.2 mm length DSR structures, which were more than two times higher than the quality factors of microring resonators. A bulk sensitivity of 1410 nm/RIU was calculated for detecting 1 µL IPA solutions inside a 200 µm wide microchannel by using the DSR cavity, which had more than a 10-fold higher sensitivity than the sensitivity of the microring resonators. A DSR device was also used for the detection of 100 ppm acetone gas inside a closed bottle.
Collapse
Affiliation(s)
- Anh Igarashi
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
| | - Maho Abe
- Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
| | - Shigeki Kuroiwa
- R&D Group, KOKOROMI Inc., Shinjuku-ku, Tokyo 169-0051, Japan
| | - Keishi Ohashi
- R&D Group, KOKOROMI Inc., Shinjuku-ku, Tokyo 169-0051, Japan
| | - Hirohito Yamada
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
| |
Collapse
|
3
|
Alsalman O, Crowe I. A Design of a Novel Silicon Photonics Sensor with Ultra-Large Free Spectral Range Based on a Directional Coupler-Assisted Racetrack Resonator (DCARR). SENSORS (BASEL, SWITZERLAND) 2023; 23:s23115332. [PMID: 37300058 DOI: 10.3390/s23115332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 05/29/2023] [Accepted: 05/31/2023] [Indexed: 06/12/2023]
Abstract
A novel refractive index-based sensor implemented within a silicon photonic integrated circuit (PIC) is reported. The design is based on a double-directional coupler (DC) integrated with a racetrack-type resonator (RR) to enhance the optical response to changes in the near-surface refractive index via the optical Vernier effect. Although this approach can give rise to an extremely large 'envelope' free spectral range (FSRVernier), we restrict the design geometry to ensure this is within the traditional silicon PIC operating wavelength range of 1400-1700 nm. As a result, the exemplar double DC-assisted RR (DCARR) device demonstrated here, with FSRVernier = 246 nm, has a spectral sensitivity SVernier = 5 × 104 nm/RIU.
Collapse
Affiliation(s)
- Osamah Alsalman
- Department of Electrical Engineering, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
| | - Iain Crowe
- Department of Electrical and Electronic Engineering, Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK
| |
Collapse
|
4
|
Wu J, Lin H, Moss DJ, Loh KP, Jia B. Graphene oxide for photonics, electronics and optoelectronics. Nat Rev Chem 2023; 7:162-183. [PMID: 37117900 DOI: 10.1038/s41570-022-00458-7] [Citation(s) in RCA: 61] [Impact Index Per Article: 30.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 12/01/2022] [Indexed: 01/19/2023]
Abstract
Graphene oxide (GO) was initially developed to emulate graphene, but it was soon recognized as a functional material in its own right, addressing an application space that is not accessible to graphene and other carbon materials. Over the past decade, research on GO has made tremendous advances in material synthesis and property tailoring. These, in turn, have led to rapid progress in GO-based photonics, electronics and optoelectronics, paving the way for technological breakthroughs with exceptional performance. In this Review, we provide an overview of the optical, electrical and optoelectronic properties of GO and reduced GO on the basis of their chemical structures and fabrication approaches, together with their applications in key technologies such as solar energy harvesting, energy storage, medical diagnosis, image display and optical communications. We also discuss the challenges of this field, together with exciting opportunities for future technological advances.
Collapse
|
5
|
Qu Y, Yang Y, Wu J, Zhang Y, Jia L, El Dirani H, Crochemore R, Sciancalepore C, Demongodin P, Grillet C, Monat C, Jia B, Moss DJ. Photo-Thermal Tuning of Graphene Oxide Coated Integrated Optical Waveguides. MICROMACHINES 2022; 13:1194. [PMID: 36014116 PMCID: PMC9416401 DOI: 10.3390/mi13081194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 07/25/2022] [Accepted: 07/26/2022] [Indexed: 12/07/2022]
Abstract
We experimentally investigate power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) films coated on integrated optical waveguides. We measure the light power thresholds for reversible and permanent GO reduction in silicon nitride (SiN) waveguides integrated with one and two layers of GO. For the device with one layer of GO, the power threshold for reversible and permanent GO reduction are ~20 and ~22 dBm, respectively. For the device with two layers of GO, the corresponding results are ~13 and ~18 dBm, respectively. Raman spectra at different positions of a hybrid waveguide with permanently reduced GO are characterized, verifying the inhomogeneous GO reduction along the direction of light propagation through the waveguide. The differences between the PTT induced by a continuous-wave laser and a pulsed laser are also compared, confirming that the PTT mainly depend on the average input power. These results reveal interesting features for 2D GO films coated on integrated optical waveguides, which are of fundamental importance for the control and engineering of GO's properties in hybrid integrated photonic devices.
Collapse
Affiliation(s)
- Yang Qu
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia; (Y.Q.); (Y.Z.); (L.J.)
| | - Yunyi Yang
- Center for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC 3122, Australia;
| | - Jiayang Wu
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia; (Y.Q.); (Y.Z.); (L.J.)
| | - Yuning Zhang
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia; (Y.Q.); (Y.Z.); (L.J.)
| | - Linnan Jia
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia; (Y.Q.); (Y.Z.); (L.J.)
| | | | - Romain Crochemore
- Minatec, Optics and Photonics Division, CEA-LETI, 38054 Grenoble, France;
| | | | - Pierre Demongodin
- Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Ecole Centrale Lyon, 69130 Ecully, France; (P.D.); (C.G.); (C.M.)
| | - Christian Grillet
- Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Ecole Centrale Lyon, 69130 Ecully, France; (P.D.); (C.G.); (C.M.)
| | - Christelle Monat
- Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Ecole Centrale Lyon, 69130 Ecully, France; (P.D.); (C.G.); (C.M.)
| | - Baohua Jia
- Center for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC 3122, Australia;
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - David J. Moss
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia; (Y.Q.); (Y.Z.); (L.J.)
| |
Collapse
|
6
|
Wu J, Jia L, Zhang Y, Qu Y, Jia B, Moss DJ. Graphene Oxide for Integrated Photonics and Flat Optics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006415. [PMID: 33258178 DOI: 10.1002/adma.202006415] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2020] [Revised: 11/05/2020] [Indexed: 05/15/2023]
Abstract
With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of 2D materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences such as photovoltaics, optical imaging, sensing, nonlinear optics, and light emitting. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.
Collapse
Affiliation(s)
- Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| |
Collapse
|
7
|
Ly NH, Kim HH, Joo S. On‐Site
Detection for Hazardous Materials in Chemical Accidents. B KOREAN CHEM SOC 2020. [DOI: 10.1002/bkcs.12140] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Affiliation(s)
- Nguyễn Hoàng Ly
- Department of Chemistry Soongsil University Seoul 06978 Republic of Korea
| | - Ho Hyun Kim
- Department of Integrated Environmental Systems Pyeongtaek University Pyeongtaek Republic of Korea
| | - Sang‐Woo Joo
- Department of Chemistry Soongsil University Seoul 06978 Republic of Korea
| |
Collapse
|