Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

Operando Scanning Electron Microscopy Study of Support Interactions and Mechanisms of Salt-Assisted WS2 Growth

Salt enhanced chemical vapor deposition of WS2 and related 2D materials is widespread, and while many mechanisms including vapor-liquid-solid (VLS) mediated growth have been suggested, gaining a more detailed understanding remains challenging. We employ operando scanning electron microscopy to resolve the entire process of salt-assisted CVD of WS2, focusing on a model system of individual, small (<100 μm), sapphire supported sodium tungstate (Na2WO4) salt particles. We reveal support interactions that lead a salt particle to develop a lateral halo interface, driven by surface eutectic melting above 630 °C. This halo dictates the salt wetting as well as Na and W transport, and thus upon gaseous sulfur precursor exposure dominates the spatiotemporal WS2 nucleation and mono- and multilayer domain expansion kinetics, all of which we can directly track by secondary electron (SE) contrast with a conventional In-Lens SE detector. Unlike for a conventional VLS mechanism, large (>20 μm) monolayer WS2 formation does not involve the salt droplet directly attached to the growth facets, rather the salt droplet drives WS2 layer growth in the contiguous halo interface region with a continuous supply of W. We compare this to SiO2 and NaOH treated sapphire where corrosive surface roughening dictates the salt wetting, and critically discuss our findings in the context of the connected wider literature.

Resolving the Electron Plume within a Scanning Electron Microscope

Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and thereby overlook the rich material information contained within them. Here, by simple modifications to a standard SEM tool, we resolve the momentum and energy information on secondary electrons by directly imaging the electron plume generated by the electron beam of the SEM. Leveraging these spectroscopic imaging capabilities, our technique is able to image lateral electric fields across a prototypical silicon p-n junctions and to distinguish differently doped regions, even when buried beyond depths typically accessible by SEM. Intriguingly, the subsurface sensitivity of this technique reveals unexpectedly strong surface band bending within nominally passivated semiconductor structures, providing useful insights for complex layered component designs, in which interfacial dynamics dictate device operation. These capabilities for noninvasive, multimodal probing of complicated electronic components are crucial in today's electronic manufacturing but is largely inaccessible even with sophisticated techniques. These results show that seemingly simple SEM can be extended to probe complex and useful material properties.

A review on SEM imaging of graphene layers

Atomic-thick graphene has stimulated great interests for exploring fundamental science and technological applications due to its promising electronic, mechanical and thermal properties. It is important to gain a deeper understanding of geometrical/structural characteristics of graphene and its properties/performance. Scanning electron microscopy (SEM) is indispensable for characterizing graphene layers. This review details SEM imaging of graphene layer, including the SEM image contrast mechanism of graphene layers, imaging parameter-dependent contrast of graphene layers and the influence of polycrystalline substrates on image contrast. Furthermore, a summary of SEM applications in imaging graphene layers is also provided, including layer-number determinations, study of chemical vapor deposition (CVD)-growth mechanism, and reveal of anti-corrosive failure mechanism of graphene layers. This review will provide a systematic and comprehensive understanding on SEM imaging of graphene layers for graphene community.

Nonequilibrium Dynamics of Electron Emission from Cold and Hot Graphene under Proton Irradiation

Characteristic properties of secondary electrons emitted from irradiated two-dimensional materials arise from multi-length and multi-time-scale relaxation processes that connect the initial nonequilibrium excited electron distribution with their eventual emission. To understand these processes, which are critical for using secondary electrons as high-resolution thermalization probes, we combine first-principles real-time electron dynamics with irradiation experiments. Our data for cold and hot proton-irradiated graphene show signatures of kinetic and potential emission and generally good agreement for electron yields between experiment and theory. The duration of the emission pulse is about 1.5 fs, which indicates high time resolution when used as a probe. Our newly developed method to predict kinetic energy spectra shows good agreement with electron and ion irradiation experiments and prior models. We find that the lattice temperature significantly increases secondary electron emission, whereas electron temperature has a negligible effect.

Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

We use epitaxial lateral overgrowth (ELO) to produce semimetallic graphene nanostructures embedded in a semiconducting GaAs matrix for potential applications in plasmonics, THz generation and detection, and tunnel junctions in multijunction solar cells. We show that (1) the combination of low sticking coefficient and fast surface diffusion on graphene enhances nucleation selectivity at exposed regions of the substrate and (2) high growth temperatures favor efficient lateral overgrowth, coalescence, and planarization of epitaxial GaAs films over the graphene nanostructures. Our work provides a more complete understanding of ELO using graphene masks, as opposed to more conventional dielectric masks, and enables new types of metal/semiconductor nanocomposites.

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS₂) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.

Scalable Characterization of 2D Gallium-Intercalated Epitaxial Graphene

Scalable synthesis of two-dimensional gallium (2D-Ga) covered by graphene layers was recently realized through confinement heteroepitaxy using silicon carbide substrates. However, the thickness, uniformity, and area coverage of the 2D-Ga heterostructures have not previously been studied with high-spatial resolution techniques. In this work, we resolve and measure the 2D-Ga heterostructure thicknesses using scanning electron microscopy (SEM). Utilizing multiple correlative methods, we find that SEM image contrast is directly related to the presence of uniform bilayer Ga at the interface and a variation of the number of graphene layers. We also investigate the origin of SEM contrast using both experimental measurements and theoretical calculations of the surface potentials. We find that a carbon buffer layer is detached due to the gallium intercalation, which increases the surface potential as an indication of the 2D-Ga presence. We then scale up the heterostructure characterization over a few-square millimeter area by segmenting SEM images, each acquired with nanometer-scale in-plane resolution. This work leverages the spectroscopic imaging capabilities of SEM that allows high-spatial resolution imaging for tracking intercalants, identifying relative surface potentials, determining the number of 2D layers, and further characterizing scalability and uniformity of low-dimensional materials.

A 2D material-based floating gate device with linear synaptic weight update

Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN).

Synthesis and Physicochemical Transformations of Size-Sorted Graphene Oxide during Simulated Digestion and Its Toxicological Assessment against an In Vitro Model of the Human Intestinal Epithelium

In the last decade, along with the increasing use of graphene oxide (GO) in various applications, there is also considerable interest in understanding its effects on human health. Only a few experimental approaches can simulate common routes of exposure, such as ingestion, due to the inherent complexity of the digestive tract. This study presents the synthesis of size-sorted GO of sub-micrometer- or micrometer-sized lateral dimensions, its physicochemical transformations across mouth, gastric, and small intestinal simulated digestions, and its toxicological assessment against a physiologically relevant, in vitro cellular model of the human intestinal epithelium. Results from real-time characterization of the simulated digestas of the gastrointestinal tract using multi-angle laser diffraction and field-emission scanning electron microscopy show that GO agglomerates in the gastric and small intestinal phase. Extensive morphological changes, such as folding, are also observed on GO following simulated digestion. Furthermore, X-ray photoelectron spectroscopy reveals that GO presents covalently bound N-containing groups on its surface. It is shown that the GO employed in this study undergoes reduction. Toxicological assessment of the GO small intestinal digesta over 24 h does not point to acute cytotoxicity, and examination of the intestinal epithelium under electron microscopy does not reveal histological alterations. Both sub-micrometer- and micrometer-sized GO variants elicit a 20% statistically significant increase in reactive oxygen species generation compared to the untreated control after a 6 h exposure.

High-Contrast SEM Imaging of Supported Few-Layer Graphene for Differentiating Distinct Layers and Resolving Fine Features: There is Plenty of Room at the Bottom

For supported graphene, reliable differentiation and clear visualization of distinct graphene layers and fine features such as wrinkles are essential for revealing the structure-property relationships for graphene and graphene-based devices. Scanning electron microscopy (SEM) has been frequently used for this purpose where high-quality image contrast is critical. However, it is surprising that the effect of key imaging parameters on the image contrast has been seriously undermined by the graphene community. Here, superior image contrast of secondary electron (SE) images for few-layer graphene supported on SiC and SiO₂ /Si is realized through simultaneously tuning two key parameters-acceleration voltage (V_acc ) and working distance (WD). The overlooked role of WD in characterizing graphene is highlighted and clearly demonstrated. A unified model of V_acc and WD dependence of three types of SE collected by the standard side-attached Everhart-Thornley (E-T) SE detector is conceptually developed for mechanistically understanding the improved mass thickness contrast for supported few-layer graphene. The findings reported here will have important implications for effective characterizations of atomically thick 2D materials and devices.

High resolution SEM characterization of nano-precipitates in ODS steels

The performance of the present-day scanning electron microscopy (SEM) extends far beyond delivering electronic images of the surface topography. Oxide dispersion strengthened (ODS) steel is on of the most promising materials for the future nuclear fusion reactor because of its good radiation resistance, and higher operation temperature up to 750°C. The microstructure of ODS should not exceed tens of nm, therefore there is a strong need in a fast and reliable technique for their characterization. In this work, the results of low-kV SEM characterization of nanoprecipitates formed in the ODS matrix are presented. Application of highly sensitive photo-diode BSE detector in SEM imaging allowed for the registration of single nm-sized precipitates in the vicinity of the ODS alloys. The composition of the precipitates has been confirmed by TEM-EDS.

Stabilization of hybrid perovskite CH3NH3PbI3 thin films by graphene passivation

We report the long-term stability of water-sensitive hybrid perovskites CH₃NH₃PbI₃ that were protected with monolayer graphene. This successful passivation was enabled by our development of a new water-free and polymer-free graphene transfer method. Monolayer graphene samples grown by plasma-enhanced chemical vapor deposition and transferred onto different substrates with the water/polymer-free method were found to preserve their high-quality characteristics after the transfer, as manifested by the studies of Raman, X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), optical absorption, and sheet resistance. Additionally, XPS, UPS and optical absorption studies of fully graphene-covered CH₃NH₃PbI₃ thin films showed spectral invariance even after 3 months, which was in sharp contrast to the drastic spectral changes after merely one week in control CH₃NH₃PbI₃ samples without graphene protection. This successful demonstration of the graphene-enabled passivation and long-term stability of CH₃NH₃PbI₃ thin films therefore opens up a new pathway towards realistic photovoltaic applications of hybrid perovskites.

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (<1.25 eV) to create valence-band holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

Auger processes are at the core of electron emission in solid-state physics, however measuring the spectra of electrons emitted solely as a result of Auger transitions remains a challenge. Here, the authors measure the electron energy spectrum in graphene and observe the prominence of Auger-like processes in its valence band.