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Pozina G, Hemmingsson C, Abrikossova N, Girshova EI, Lähderanta E, Kaliteevski MA. Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1421. [PMID: 37111006 PMCID: PMC10145853 DOI: 10.3390/nano13081421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 04/17/2023] [Accepted: 04/18/2023] [Indexed: 06/19/2023]
Abstract
The combination of plasmonic nanoparticles and semiconductor substrates changes the properties of hybrid structures that can be used for various applications in optoelectronics, photonics, and sensing. Structures formed by colloidal Ag nanoparticles (NPs) with a size of 60 nm and planar GaN nanowires (NWs) have been studied by optical spectroscopy. GaN NWs have been grown using selective-area metalorganic vapor phase epitaxy. A modification of the emission spectra of hybrid structures has been observed. In the vicinity of the Ag NPs, a new emission line appears at 3.36 eV. To explain the experimental results, a model considering the Fröhlich resonance approximation is suggested. The effective medium approach is used to describe the enhancement of emission features near the GaN band gap.
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Affiliation(s)
- Galia Pozina
- Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden; (C.H.)
| | - Carl Hemmingsson
- Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden; (C.H.)
| | - Natalia Abrikossova
- Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden; (C.H.)
| | - Elizaveta I. Girshova
- Department of Physics, LUT-University, 53850 Lappeenranta, Finland; (E.I.G.); (E.L.)
| | - Erkki Lähderanta
- Department of Physics, LUT-University, 53850 Lappeenranta, Finland; (E.I.G.); (E.L.)
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Zhao L, Liu C, Wang K. Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106757. [PMID: 35218296 DOI: 10.1002/smll.202106757] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.
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Affiliation(s)
- Lixia Zhao
- School of Electrical Engineering, Tiangong University, 399 Binshuixi Road, Tianjin, 300387, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Chang Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
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Petronijevic E, Belardini A, Leahu G, Hakkarainen T, Piton MR, Koivusalo E, Sibilia C. Broadband optical spin dependent reflection in self-assembled GaAs-based nanowires asymmetrically hybridized with Au. Sci Rep 2021; 11:4316. [PMID: 33619343 PMCID: PMC7900205 DOI: 10.1038/s41598-021-83899-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Accepted: 12/29/2020] [Indexed: 11/09/2022] Open
Abstract
Hybridization of semiconductor nanostructures with asymmetric metallic layers offers new paths to circular polarization control and chiral properties. Here we study, both experimentally and numerically, chiral properties of GaAs-based nanowires (NWs) which have two out of six sidewalls covered by Au. Sparse ensembles of vertical, free-standing NWs were fabricated by means of lithography-free self-assembled technique on Si substrates and subsequently covered by Au using tilted evaporation. We report on optical spin-dependent specular reflection in the 680–1000 nm spectral range when the orientation of the golden layers follows the rule of extrinsic chirality. The analysis shows reflection peaks of the chiral medium whose intensity is dependent on the light handedness. We further propose a novel, time-efficient numerical method that enables a better insight into the far-field intensity and distribution of the scattered light from a sparse NW ensembles. The measurements done on three different samples in various orientations show good agreement with theoretical predictions over a broad wavelength range.
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Affiliation(s)
- Emilija Petronijevic
- Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16, 00161, Rome, Italy.
| | - Alessandro Belardini
- Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16, 00161, Rome, Italy
| | - Grigore Leahu
- Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16, 00161, Rome, Italy
| | - Teemu Hakkarainen
- Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16, 00161, Rome, Italy.,Optoelectronics Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720, Tampere, Finland
| | - Marcelo Rizzo Piton
- Optoelectronics Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720, Tampere, Finland
| | - Eero Koivusalo
- Optoelectronics Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720, Tampere, Finland
| | - Concita Sibilia
- Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, Via A. Scarpa 16, 00161, Rome, Italy
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High Circular Polarized Nanolaser with Chiral Gammadion Metal Cavity. Sci Rep 2020; 10:7880. [PMID: 32398835 PMCID: PMC7217972 DOI: 10.1038/s41598-020-64836-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2019] [Accepted: 12/16/2019] [Indexed: 11/08/2022] Open
Abstract
We demonstrate a circularly polarized laser with the metal-gallium-nitride gammadion nanocavities. The ultraviolet lasing signal was observed with the high circular dichroism at room temperature under pulsed optical pump conditions. Without external magnetism which breaks the time-reversal symmetry to favor optical transitions of a chosen handedness, the coherent outputs of these chiral nanolasers show a dissymmetry factor as high as 1.1. The small footprint of these lasers are advantageous for applications related to circularly polarized photons in future integrated systems, in contrast to the bulky setup of linearly-polarized lasers and quarter-wave plates.
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Mohammadi F, Schmitzer H, Kunert G, Hommel D, Ge J, Duscher G, Langbein W, Wagner HP. Emission dynamics of hybrid plasmonic gold/organic GaN nanorods. NANOTECHNOLOGY 2017; 28:505710. [PMID: 29064371 DOI: 10.1088/1361-6528/aa95a3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We studied the emission of bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ∼1.5 μm length and ∼250 nm diameter were grown by plasma-assisted molecular beam epitaxy. Gold/Alq3 coated GaN nanorods were synthesized by organic molecular beam deposition. The near band-edge and donor-acceptor pair luminescence was investigated in bare GaN nanorods and compared with multilevel model calculations providing the dynamical parameters for electron-hole pairs, excitons, impurity bound excitons, donors and acceptors. Subsequently, the influence of a 10 nm gold coating without and with an Alq3 spacer layer was studied and the experimental results were analyzed with the multilevel model. Without a spacer layer, a significant PL quenching and lifetime reduction of the near band-edge emission is found. The behavior is attributed to surface band-bending and Förster energy transfer from excitons to surface plasmons in the gold layer. Inserting a 5 nm Alq3 spacer layer reduces the PL quenching and lifetime reduction which is consistent with a reduced band-bending and Förster energy transfer. Increasing the spacer layer to 30 nm results in lifetimes which are similar to uncoated structures, showing a significantly decreased influence of the gold coating on the excitonic dynamics.
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Affiliation(s)
- F Mohammadi
- Department of Physics, University of Cincinnati, Cincinnati, OH 45221, United States of America
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Yan SS, Chen AQ, Wu YY, Zhu H, Wang XH, Ling CC, Su SC. Photoluminescence and lasing characteristics of single nonpolar GaN microwires. RSC Adv 2017. [DOI: 10.1039/c7ra01921a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.
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Affiliation(s)
- S. S. Yan
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices
- Institute of Opto-electronic Materials and Technology
- South China Normal University
- Guangzhou 510631
- China
| | - A. Q. Chen
- Department of Physics
- The University of Hong Kong
- China
| | - Y. Y. Wu
- State Key Laboratory of Optoelectronic Materials and Technologies
- School of Physics
- Sun Yat-Sen University
- Guangzhou 510275
- China
| | - H. Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies
- School of Physics
- Sun Yat-Sen University
- Guangzhou 510275
- China
| | - X. H. Wang
- Institute of Microelectronics
- Tsinghua University
- Beijing 100084
- China
| | - C. C. Ling
- Department of Physics
- The University of Hong Kong
- China
| | - S. C. Su
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices
- Institute of Opto-electronic Materials and Technology
- South China Normal University
- Guangzhou 510631
- China
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