Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm^-1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm²/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.

Graphene Incorporated Electrospun Nanofiber for Electrochemical Sensing and Biomedical Applications: A Critical Review

The extraordinary material graphene arrived in the fields of engineering and science to instigate a material revolution in 2004. Graphene has promptly risen as the super star due to its outstanding properties. Graphene is an allotrope of carbon and is made up of sp²-bonded carbon atoms placed in a two-dimensional honeycomb lattice. Graphite consists of stacked layers of graphene. Due to the distinctive structural features as well as excellent physico-chemical and electrical conductivity, graphene allows remarkable improvement in the performance of electrospun nanofibers (NFs), which results in the enhancement of promising applications in NF-based sensor and biomedical technologies. Electrospinning is an easy, economical, and versatile technology depending on electrostatic repulsion between the surface charges to generate fibers from the extensive list of polymeric and ceramic materials with diameters down to a few nanometers. NFs have emerged as important and attractive platform with outstanding properties for biosensing and biomedical applications, because of their excellent functional features, that include high porosity, high surface area to volume ratio, high catalytic and charge transfer, much better electrical conductivity, controllable nanofiber mat configuration, biocompatibility, and bioresorbability. The inclusion of graphene nanomaterials (GNMs) into NFs is highly desirable. Pre-processing techniques and post-processing techniques to incorporate GNMs into electrospun polymer NFs are precisely discussed. The accomplishment and the utilization of NFs containing GNMs in the electrochemical biosensing pathway for the detection of a broad range biological analytes are discussed. Graphene oxide (GO) has great importance and potential in the biomedical field and can imitate the composition of the extracellular matrix. The oxygen-rich GO is hydrophilic in nature and easily disperses in water, and assists in cell growth, drug delivery, and antimicrobial properties of electrospun nanofiber matrices. NFs containing GO for tissue engineering, drug and gene delivery, wound healing applications, and medical equipment are discussed. NFs containing GO have importance in biomedical applications, which include engineered cardiac patches, instrument coatings, and triboelectric nanogenerators (TENGs) for motion sensing applications. This review deals with graphene-based nanomaterials (GNMs) such as GO incorporated electrospun polymeric NFs for biosensing and biomedical applications, that can bridge the gap between the laboratory facility and industry.

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10^-7-10^-3 mbar and 900-980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2-3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3-10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth.

Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO2. The presence of trigonal GeO2 under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO2 leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO2 from the Ge(001) surface.

Materials Science Challenges to Graphene Nanoribbon Electronics

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.

Integration of 3D nanographene into mesoporous germanium

Graphene is a key material of interest for the modification of physicochemical surface properties. However, its flat surface is a limitation for applications requiring a high specific surface area. This restriction may be overcome by integrating 2D materials in a 3D structure. Here, a strategy for the controlled synthesis of Graphene-Mesoporous Germanium (Gr-MP-Ge) nanomaterials is presented. Bipolar electrochemical etching and chemical vapor infiltration were employed, respectively, for the nanostructuration of Ge substrate and subsequent 3D nanographene coating. While Raman spectroscopy reveals a tunable domain size of nanographene with the treatment temperature, transmission electron microscopy data confirm that the crystallinity of Gr-MP-Ge is preserved. X-ray photoelectron spectroscopy indicates the non-covalent bonding of carbon to Ge for Gr-MP-Ge. State-of-the-art molecular dynamics modeling provides a deeper understanding of the synthesis process through the presence of radicals. The successful synthesis of these nanomaterials offers the integration of nanographene into a 3D structure with a high aspect ratio and light weight, thereby opening avenues to a variety of applications for this versatile nanomaterial.

High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

Graphene was shown to reveal intriguing properties of its relativistic two-dimensional electron gas; however, its implementation to microelectronic applications is missing to date. In this work, we present a comprehensive study of epitaxial graphene on technologically relevant and in a standard CMOS process achievable Ge(100) epilayers grown on Si(100) substrates. Crystalline graphene monolayer structures were grown by means of chemical vapor deposition (CVD). Using angle-resolved photoemission spectroscopy and in situ surface transport measurements, we demonstrate their metallic character both in momentum and real space. Despite numerous crystalline imperfections, e.g., grain boundaries and strong corrugation, as compared to epitaxial graphene on SiC(0001), charge carrier mobilities of 1 × 10⁴ cm²/Vs were obtained at room temperature, which is a result of the quasi-charge neutrality within the graphene monolayers on germanium and not dependent on the presence of an interface oxide. The interface roughness due to the facet structure of the Ge(100) epilayer, formed during the CVD growth of graphene, can be reduced via subsequent in situ annealing up to 850 °C coming along with an increase in the mobility by 30%. The formation of a Ge(100)-(2 × 1) structure demonstrates the weak interaction and effective delamination of graphene from the Ge/Si(100) substrate.

Graphene impregnated electrospun nanofiber sensing materials: a comprehensive overview on bridging laboratory set-up to industry

Owing to the unique structural characteristics as well as outstanding physio-chemical and electrical properties, graphene enables significant enhancement with the performance of electrospun nanofibers, leading to the generation of promising applications in electrospun-mediated sensor technologies. Electrospinning is a simple, cost-effective, and versatile technique relying on electrostatic repulsion between the surface charges to continuously synthesize various scalable assemblies from a wide array of raw materials with diameters down to few nanometers. Recently, electrospun nanocomposites have emerged as promising substrates with a great potential for constructing nanoscale biosensors due to their exceptional functional characteristics such as complex pore structures, high surface area, high catalytic and electron transfer, controllable surface conformation and modification, superior electric conductivity and unique mat structure. This review comprehends graphene-based nanomaterials (GNMs) (graphene, graphene oxide (GO), reduced GO and graphene quantum dots) impregnated electrospun polymer composites for the electro-device developments, which bridges the laboratory set-up to the industry. Different techniques in the base polymers (pre-processing methods) and surface modification methods (post-processing methods) to impregnate GNMs within electrospun polymer nanofibers are critically discussed. The performance and the usage as the electrochemical biosensors for the detection of wide range analytes are further elaborated. This overview catches a great interest and inspires various new opportunities across a wide range of disciplines and designs of miniaturized point-of-care devices.

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.

Epitaxial graphene/Ge interfaces: a minireview

The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to a huge interest in this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the method of graphene integration in modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene-semiconductor interfaces that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shedding light on the interaction of graphene with these substrates, whose range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art field of studies of the graphene-Ge epitaxial interfaces and draws some conclusions in this research area.

CVD graphene/Ge interface: morphological and electronic characterization of ripples

Graphene grown directly on germanium is a possible route for the integration of graphene into nanoelectronic devices as well as it is of great interest for materials science. The morphology of the interface between graphene and germanium influences the electronic properties and has not already been completely elucidated at atomic scale. In this work, we investigated the morphology of the single-layer graphene grown on Ge substrates with different crystallographic orientations. We determined the presence of sinusoidal ripples with a single propagation direction, zig-zag, and could arise due to compressive biaxial strain at the interface generated as a result of the opposite polarity of the thermal expansion coefficient of graphene and germanium. Local density of states measurements on the ripples showed a linear dispersion relation with the Dirac point slightly shifted with respect to the Fermi energy indicating that these out-of-plane deformations were n-doped, while the graphene regions between the highs were undoped.

Graphene on Group-IV Elementary Semiconductors: The Direct Growth Approach and Its Applications

Since the first development of large-area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD-graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene-based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal-oxide-semiconductor (CMOS)-based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group-IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

Graphene growth by molecular beam epitaxy: an interplay between desorption, diffusion and intercalation of elemental C species on islands

The growth of graphene by molecular beam epitaxy from an elemental carbon precursor is a very promising technique to overcome some of the main limitations of the chemical vapour deposition approach, such as the possibility to synthesize graphene directly on a wide variety of surfaces including semiconductors and insulators. However, while the individual steps of the chemical vapour deposition growth process have been extensively studied for several surfaces, such knowledge is still missing for the case of molecular beam epitaxy, even though it is a key ingredient to optimise its performance and effectiveness. In this work, we have performed a combined experimental and theoretical study comparing the growth rate of the molecular beam epitaxy and chemical vapour deposition processes on the prototypical Ir (111) surface. In particular, by employing high-resolution fast X-ray photoelectron spectroscopy, we were able to follow the growth of both single- and multi-layer graphene in real time, and to identify the spectroscopic fingerprints of the different C layers. Our experiments, supported by density functional theory calculations, highlight the role of the interaction between different C precursor species and the growing graphene flakes on the growth rate of graphene. These results provide an overview of the main differences between chemical vapour deposition and molecular beam epitaxy growth and thus on the main parameters which can be tuned to optimise growth conditions.

The graphene/n-Ge(110) interface: structure, doping, and electronic properties

The implementation of graphene in semiconducting technology requires precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/n-Ge(110) interface are investigated on the local (nm) and macro (from μm to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density functional theory calculations. The electronic structure of freestanding graphene remains almost completely intact in this system, with only a moderate n-doping indicating weak interaction between graphene and the Ge substrate. With regard to the optimisation of graphene growth it is found that the substrate temperature is a crucial factor, which determines the graphene layer alignment on the Ge(110) substrate during its growth from the atomic carbon source. Moreover, our results demonstrate that the preparation route for graphene on the doped semiconducting material (n-Ge) leads to the effective segregation of dopants at the interface between graphene and Ge(110). Furthermore, it is shown that these dopant atoms might form regular structures at the graphene/Ge interface and induce the doping of graphene. Our findings help to understand the interface properties of the graphene-semiconductor interfaces and the effect of dopants on the electronic structure of graphene in such systems.

Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures

Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO₂. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO₂. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO₂. The results from the electrical and structural characterization suggest that a charge transfer in the order of 10¹² cm^-2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures.

Mechanistic study of graphitic carbon layer and nanosphere formation on the surface of T-ZnO

New vapour-deposition-solid (VDS) growth mechanism of graphitic carbon has been proposed and supported by both theoretical calculations and experimental evidence.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH₄ as carbon source on epitaxial Ge(100) layers, which were grown on Si(100), prior to the graphene synthesis. Graphene layer with the 2D/G ratio ∼3 and low D mode (i.e., low concentration of defects) was measured over the entire 200 mm wafer by Raman spectroscopy. A typical full-width-at-half-maximum value of 39 cm^-1 was extracted for the 2D mode, further indicating that graphene of good structural quality was produced. The study also revealed that the lack of interfacial oxide correlates with superior properties of graphene. In order to evaluate electrical properties of graphene, its 2 × 2 cm² pieces were transferred onto SiO₂/Si substrates from Ge/Si wafers. The extracted sheet resistance and mobility values of transferred graphene layers were ∼1500 ± 100 Ω/sq and μ ≈ 400 ± 20 cm²/V s, respectively. The transferred graphene was free of metallic contaminations or mechanical damage. On the basis of results of DFT calculations, we attribute the high structural quality of graphene grown by CVD on Ge to hydrogen-induced reduction of nucleation probability, explain the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei, and clarify the orientation of graphene domains on Ge(001) as resulting from good lattice matching between Ge(001) and graphene nucleated on such nuclei.

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using μ-Raman spectroscopy, X-ray photoemission spectroscopy, scanning electron microscopy, and atomic force microscopy. We find that by simply varying the carbon precursor flow different growth regimes yielding to graphene nanoribbons, graphene monolayer, and graphene multilayer are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.