Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces

In this work, we investigate the adsorption process of two carboxylic acids (stearic and undecylenic) on a H-Si(111) surface via the calculation of structural and energy changes as well as the simulation of their IR and Raman spectra. The two molecules adsorb differently at the surface since the stearic acid simply physisorbs while the undecylenic acid undergoes a chemical reaction with the hydrogen atoms of the surface. This difference is observed in the change of geometry during the adsorption. Indeed, the chemisorption of the undecylenic acid has a bigger impact on the structure than the physisorption of the stearic acid. Consistently, the former is also characterized by a larger value of adsorption energy and a smaller value of the tilting angle with respect to the normal plane. For both the IR and Raman signatures, the spectra of both molecules adsorbed at the surface are in a first approximation the superposition of the spectra of the Si cluster and of the carboxylic acid considered individually. The main deviation from this simple observation is the peak of the stretching Si-H (ν(Si-H)) mode, which is split into two peaks upon adsorption. As expected, the splitting is bigger for the chemisorption than the physisorption. The modes corresponding to atomic displacements close to the adsorption site display a frequency upshift by a dozen wavenumbers. One can also see the disappearance of the peaks associated with the C=C double bond when the undecylenic acid chemisorbs at the surface. The Raman and IR spectra are complementary and one can observe here that the most active Raman modes are generally IR inactive. Two exceptions to this are the two ν(Si-H) modes which are active in both spectroscopies. Finally, we compare our simulated spectra with some experimental measurements and we find an overall good agreement.

Selective electroless metallization of patterned polymeric films for lithography applications

The fabrication of electrical interconnects to provide power for and communication with computers as their component complementary metal oxide semiconductor (CMOS) devices continue to shrink in size presents significant materials and processing compatibility challenges. We describe here our efforts to address these challenges using top-surface imaging and hybrid photoresist/self-assembled monolayer patterning approaches, in conjunction with selective electroless metal deposition, to develop processes capable of fabricating appropriate submicron and nanoscale metal features useful as electrical interconnects, as well as plasma-etch-resistant masks and metal diffusion barriers. Our efforts focus on the development of cost-effective methods compatible with a manufacturing environment that satisfy materials and process constraints associated with CMOS device production. We demonstrate the fabrication of approximately 50-nm-width features in metal with high fidelity and sufficient control of edge acuity to satisfy current industry design rules using our processes and discuss the challenges and opportunities for fabrication of analogous sub-10-nm metal features.

Nanopatterned monolayers of an adsorbed chromophore

A simple lift-off process was developed to rapidly fabricate nanopatterned photofunctional surfaces. Dye molecules of a perylene derivative (PDID) were adsorbed irreversibly on clean silicon through the holes of an electron-beam lithographied polymer mask. The subsequent removal of the mask in a proper solvent results in PDID nanosized regions of width as small as 30 nm for stripes and of diameter as small as 120 nm for dots. Numerical analyses of atomic force microscopy and laser-scanning confocal microscopy images show that the dye molecules are confined to the regions defined by the lithographic process, with the integrated fluorescence intensity being essentially proportional to the size of the nanofeatures. This demonstrates that a simple organic lift-off process compatible with clean-room technology, and not involving any chemical step, is able to produce photofunctional nanopatterned surfaces, even though the dye is not chemically bonded to the silicon surface.