High-temperature stable field emission of B-doped SiC nanoneedle arrays

Field Emission Current Stability and Noise Generation Mechanism of Large Aspect Ratio Diamond Nanowires

This paper reports the field emission (FE) current stability of a diamond nanowire (DNW) array. Assembled with a silicon anode with a 1.03 μm gap, the FE properties, as well as the current stability of the DNW cathode, were systematically evaluated in a vacuum test system under different vacuum degrees, current densities, and atmospheres. Experiments demonstrate that lower pressure and current density can improve FE properties and current stability. In addition, compared to air and compressed air, DNWs exhibit higher FE properties and current stability in N2. DNWs achieve a remarkably low turn-on field of 1.65 V/μm and a high current density of 265.38 mA/cm2. Notably, they demonstrate merely 0.70% current fluctuation under test conditions of 1.2 × 10-4 Pa and 0.1 mA/cm2. Additionally, based on the Fowler-Nordheim theory, the change in work function after gas adsorption was analyzed, and the noise generation mechanism was derived from the noise power spectrum. The current exponent is determined as 1.94, while the frequency exponent ranges from 0.92 to 1.32, confirming that the dominant noise mechanism in DNWs arises from surface work function fluctuations due to the adsorption and desorption of residual gas.

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer-Scale Fabrication

Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid-state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low-cost IC-compatible manufacturing technologies on a 2-inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhibits outstanding stability during cyclic, long-term, and pulsed voltage testing. Additionally, it displays fast switching characteristics and good repeatability with a response time of fewer than 10 ns. Moreover, the temperature-dependent performance of the device can guide the design of GaN NACTs for applications in extreme conditions. The research holds great promise for large current NACTs and will speed up their practical implementation.

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Making field emitters with both low turn-on field (E_to) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the E_to of the as-fabricated SiC field emitter is low down to 0.52 V/μm, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.

Effect of heat preservation time on the micro morphology and field emission properties of La-doped SiC nanowires

Lanthanum doped SiC nanowires (La-doped SiC NWs) were prepared using the chemical vapor reaction technique at different heat preservation times.

Enhanced Flexibility and Microwave Absorption Properties of HfC/SiC Nanofiber Mats

Hafnium carbide (HfC) phase, with a high melting point, excellent strength, and high electrical conductivity, could be a suitable addition to enhance the microwave absorption properties of one-dimensional silicon carbide (SiC) nanomaterials without sacrificing its high-temperature thermal stability. In the present work, HfC/SiC hybrid nanofiber mats with different HfC loading contents are fabricated by electrospinning and high-temperature pyrolysis. HfC hybrids with sizes of 5-10 nm are embedded in the SiC nanofibers. As the HfC content increases from 0 to 6.3 wt %, the average diameter of the fibers drops from 2.62 μm to 260 nm. Meanwhile, the electrical conductivity rises from 7.9 × 10^-8 to 4.2 × 10^-5 S/cm. Moreover, the flexibility of the nanofiber mats is also greatly improved, according to a 200-times 180° bending test. Furthermore, compared with pure SiC fiber mats, the HfC/SiC nanofiber mats possess much larger dielectric loss because of higher electrical conductivity. At the optimal HfC content of 2.5 wt %, the HfC/SiC nanofibers/silicon resin composite (10 wt %) exhibits a minimal reflection loss (RL) of -33.9 dB at 12.8 GHz and a 3 mm thickness with a broad effective absorption bandwidth (RL < -10 dB) of 7.4 GHz. The above results prove that introducing HfC into SiC nanofiber mats is an effective way to enhance their flexibility, dielectric properties, and microwave absorption performance.

Flexible Fe3Si/SiC ultrathin hybrid fiber mats with designable microwave absorption performance

Flexible Fe₃Si/SiC ultrathin fiber mats have been fabricated by electrospinning and high temperature treatment (1400 °C) using polycarbosilane (PCS) and ferric acetylacetonate (Fe(acac)₃) as precursors.

SiC Nanofiber Mat: A Broad-Band Microwave Absorber, and the Alignment Effect

Fiber alignment is a key factor that determines the physical properties of nanofiber mats. In this work, SiC nanofiber mats with or without fiber alignment are fabricated via electrospinning and the microwave electromagnetic properties of their silicone resin composites (5 wt %) are investigated in 2-18 GHz. By comparing with the composite containing SiC whisker, it is found that the nanofiber mats show superior dielectric loss and a minimal reflection loss (RL) of around -49 dB at 8.6 GHz and 4.3 mm thickness, associated with a broad effective absorption (<-10 dB) bandwidth (EAB) of about 7.2 GHz at 2.8 mm thickness. Moreover, the performance can be further enhanced (RL = -53 dB at 17.6 GHz and 2.3 mm thickness) by aligning the nanofiber in the plane of mat, accompanied by the shift of absorption peak to higher-frequency direction and broader EAB up to 8.6 GHz at 3 mm. In addition, the stacking ways of aligned SiC nanofiber mats (either parallel or perpendicular) are proved to have a negligible effect on their microwave properties. Compared with parallel stacking of the aligned mats, cross-stacking (perpendicular) only leads to a slight drop of the attenuation ability. It confirms that alignment of nanofiber in the mats offers a more effective approach to improve the microwave absorption properties than changing the ways of stacking. Furthermore, it is worth mentioning that the low loading fraction (5 wt %) is a great advantage to reduce the weight as well as the cost for large-scale production. All of these facts indicate that the aligned SiC nanofiber mats can serve as a great lightweight and broad-band microwave absorber.

Superior B-Doped SiC Nanowire Flexible Field Emitters: Ultra-Low Turn-On Fields and Robust Stabilities against Harsh Environments

Low turn-on fields together with boosted stabilities are recognized as two key factors for pushing forward the implementations of the field emitters in electronic units. In current work, we explored superior flexible field emitters based on single-crystalline 3C-SiC nanowires, which had numbers of sharp edges, as well as corners surrounding the wire body and B dopants. The as-constructed field emitters behaved exceptional field emission (FE) behaviors with ultralow turn-on fields (E_to) of 0.94-0.68 V/μm and current emission fluctuations of ±1.0-3.4%, when subjected to harsh working conditions under different bending cycles, various bending configurations, as well as elevated temperature environments. The sharp edges together with the edges were able to significantly increase the electron emission sites, and the incorporated B dopants could bring a more localized state close to the Fermi level, which rendered the SiC nanowire emitters with low E_to, large field enhancement factor as well as robust current emission stabilities. Current B-doped SiC nanowires could meet all essential requirements for an ideal flexible emitters, which exhibit their promising prospect to be applied in flexible electronic units.

Electrospinning of Fe/SiC Hybrid Fibers for Highly Efficient Microwave Absorption

Fe/SiC hybrid fibers have been fabricated by electrospinning and subsequent high-temperature (1300 °C) pyrolysis in Ar atmosphere using polycarbosilane (PCS) and Fe₃O₄ precursors. It is found that the introduction of Fe has had a dramatic impact on the morphology, crystallization temperature, and microwave electromagnetic properties of the hybrid fibers. In addition, the Fe particles have acted as catalyst sites to facilitate the growth of SiCO nanowires on the surface of the hybrid fibers. As a result, the permittivity and permeability have been enhanced effectively, and the high reflection loss (RL) has been achieved at a low frequency band with a thin absorber thickness. At an optimal PCS/Fe ratio of 3:0.5, the hybrid fiber/silicone resin composite (35 wt %) with a 2.25 mm absorber thickness exhibits a minimal RL of about -46.3 dB at 6.4 GHz. The wide frequency band (4-9.6 GHz) and thin absorber thickness (1.5-3.5 mm) for effective absorption (<-20 dB) prove that the Fe/SiC hybrid fiber is a promising candidate to work as a highly efficient and lightweight absorber in the C band (4-8 GHz).

Temperature-controlled synthesis, thermodynamics and field emission properties of β-SiC/SiO2 coaxial heterojunction emitters

β-SiC/SiO₂ coaxial heterogeneous emitters composed of a SiC nanowire core and a uniform amorphous SiO₂ coating have been fabricated via the chemical vapor deposition (CVD) technique.

Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters

Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E_to of 1.03-0.73 Vμm^-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).