Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction

The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 106was obtained fromI-Vmeasurements of the device in the dark. TheI-Vmeasurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well asI-Vmeasurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W-1(at -1.72 V) and at zero bias, an impressive detectivity of 6.28 × 1012Jones, and a high on/off ratio of 8.38 × 105, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% (V = -1.72 V) and 2.60 × 1010W-1(V= 0.0 V), respectively, while the minimum NEP value was ∼10-14W.Hz-1/2for 365 nm atV= 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation.

Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.

Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions

Long-lived photon-stimulated conductance changes in solid-state materials can enable optical memory and brain-inspired neuromorphic information processing. It remains challenging to realize optical switching with low-energy consumption, and new mechanisms and design principles giving rise to persistent photoconductivity (PPC) can help overcome an important technological hurdle. Here, we demonstrate versatile heterojunctions between metal-halide perovskite nanocrystals and semiconducting single-walled carbon nanotubes that enable room-temperature, long-lived (thousands of seconds), writable, and erasable PPC. Optical switching and basic neuromorphic functions can be stimulated at low operating voltages with femto- to pico-joule energies per spiking event, and detailed analysis demonstrates that PPC in this nanoscale interface arises from field-assisted control of ion migration within the nanocrystal array. Contactless optical measurements also suggest these systems as potential candidates for photonic synapses that are stimulated and read in the optical domain. The tunability of PPC shown here holds promise for neuromorphic computing and other technologies that use optical memory.

Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Giga-Gain at Room Temperature in Functionalized Carbon Nanotube Phototransistors Based on a Nonequilibrium Mechanism

Achieving high gain in a photodetector is critical to detect weak light fields because of the need to amplify the signal. Here, we report the observation of a gain exceeding 10⁹ for a phototransistor composed of an array of aligned semiconducting carbon nanotubes functionalized with a nanoscale layer of poly(3-hexylthiophene-2,5-diyl) (P3HT). In contrast to the expectation based on simple band alignments, the phototransistor operates by transferring holes between the P3HT and the CNT, trapping negative charge near the nanotubes. This mechanism leads to an integrating detector that is shown to detect as little as 490 aW and to resolve as few as 8-13 photons/nanotube at room temperature. A detailed experimental and theoretical investigation of the mechanism shows that the phototransistor is most sensitive when prepared in a nonequilibrium state.

Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH3NH3PbI3 micro/nanowire

Hybrid organic-inorganic perovskite (HOIP) materials have remarkable potential in solar cells owing to their high power conversion efficiency and inexpensive preparation. However, their current-voltage (I-V) curves often exhibit hysteresis characteristics, which not only strongly affect the accuracy of measurements but also seriously impair device performance, and, moreover, their actual origin is still the subject of debate. Here, a single HOIP micro/nanowire-based two-terminal device was constructed. Not only can its hysteresis properties be accurately modulated, but also their origin can clearly be identified as variations in the surface barrier related to trap filling. Under illumination of the entire device with visible (VIS) light, two anticlockwise hysteresis loops appear symmetrically in cyclic I-V curves. Interestingly, the cyclic I-V curves can be switchably changed into asymmetrical "8"-shaped hysteresis loops with bipolar resistive switching (RS) features when only the vicinity of one electrode is illuminated. The traps located in the surface space charge region play a crucial role in the tunable hysteresis behaviour. Owing to the presence of abundant surface states, two back-to-back connected diodes related to the surface barrier can be formed in the two-terminal device. With the synergistic assistance of illumination and bias, moreover, the injection and extraction of holes in the surface space charge region can effectively modulate the surface barrier, which triggers the formation of a bipolar RS device. Accordingly, two switchable back-to-back connected bipolar RS devices were built. Regarding the tunable hysteresis with nonvolatile memory properties controlled by the synergistic action of bias and illumination, our results provide a valuable insight into the identification of its origin and, furthermore, also indicate that the HOIP materials have significant potential in nonvolatile memory applications.

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field-Effect Transistors

The past several years have witnessed tremendous developments of metal halide perovskite (MHP)-based optoelectronics. Particularly, the intensive research of MHP-based light-emitting diodes, photodetectors, and solar cells could probably reform the optoelectronic semiconductor industry. In comparison, in spite of the large intrinsic charge carrier mobility of MHPs, the development of MHP-based field-effect transistors (MHP-FETs) is relatively slow, which is essentially due to the gate-field screening effect induced by the ion migration and accumulation in MHP-FETs. This work mainly aims to summarize the recent important work on MHP-FETs and propose solutions in terms of the development bottleneck of perovskite-based transistors, in an attempt to boost the research of MHP transistors further. First, the advantages and potential applications of MHP-FETs are briefly introduced, which is followed by a detailed description of the MHP crystalline structure and various material fabrication techniques. Afterward, MHP-FETs are discussed, including transistors based on hybrid organic-inorganic perovskites, all-inorganic perovskites, and lead-free perovskites.

Perovskite-based photodetectors: materials and devices

While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic-inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.

All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance

High-performance all-inorganic perovskite-based metal/semiconductor/metal (MSM) photodetectors with a bilayer composite film of mesoporous TiO₂ and CsPbBr₃ quantum dots as a photosensitizer were prepared. The photodetectors demonstrated significantly improved on/off ratios of nearly three orders of magnitude compared to those of pure bromine-based perovskite nanocrystal photodetectors with an MSM structure.

Influence of the organic cation disorder on photoconductivity in ethylenediammonium lead iodide, NH3CH2CH2NH3PbI4

We report the synthesis, crystal structure, and photoconductivity of EDPbI₄. The ED disorder depends on the thermal treatment of EDPbI₄. The increased disorder is associated with increased photoconductivity.

Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Recent years have witnessed skyrocketing research achievements in organic-inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs-based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single-component perovskites in terms of different micromorphologies are discussed, namely, 3D thin-film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite-based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs-based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites-based photodetectors.

Optical detection of charge dynamics in CH3NH3PbI3/carbon nanotube composites

We have investigated the optical absorption of metallic and semiconducting carbon nanotubes/CH₃NH₃PbI₃ micro- and nanowire composites. Upon visible light illumination semiconducting carbon nanotube based samples show a photo-induced doping, originating from the charge carriers created in the perovskite while this kind of change is absent in the composites containing metallic nanotubes, due to their strikingly different electronic structure. The response in the nanotubes shows, beside a fast diffusion of photo-generated charges, a slow component similar to that observed in pristine CH₃NH₃PbI₃ attributed to structural rearrangement, and leading to slight, light induced changes of the optical gap of the perovskite. This charge transfer from the illuminated perovskite confirms that carbon nanotubes (especially semiconducting ones) can form efficient charge-transporting layers in the novel organometallic perovskite based optoelectronic devices.

High-performance nanotube-enhanced perovskite photodetectors

Organic-inorganic perovskites have already shown a tremendous potential for low-cost light-harvesting devices. Yet, the relatively low carrier mobilities in bulk perovskites still prevent large-area devices with performances competing with state-of-the-art technologies. Here, we tackle this fundamental challenge by incorporating single-wall carbon nanotubes within a perovskite matrix by means of a simple two-step method in ambient air. Using this nano-engineered hybrid film, we demonstrate large-area photodetectors with responsivities up-to 13.8 A.W⁻¹ and a broad spectral response from 300 to 800 nm, indicating that photocurrent generation arises from the charge transfer from the perovskite matrix to the embedded nanotube network. As the nanotubes facilitate the carrier extraction, these photodetectors also show a fast response time of 10 ms. This is significantly faster than most of previous reports on perovskite-based photodetectors, including devices with much smaller photosensitive areas. This approach is also well-suited for large-scale production of other perovskite-based light-harvesting devices.

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH₃NH₃PbI₃ and its close relative, CH₃NH₃SnI₃. In the dark state the device behaves as a diode, with the Sn homologue acting as the "p" side. The junction is extremely sensitive to illumination. A complete reversal of the diode polarity, the first observation of its kind, is seen when the junction is exposed to red laser light of 25 mW/cm² or larger power density. This finding opens up the possibility for a novel class of optoelectronic devices.

Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction

Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FE_pTs) based on CH₃NH₃PbI₃ perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cm²V^-1s^-1 for holes and 0.16 cm²V^-1s^-1 for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CH₃NH₃PbI₃ perovskite-PbSe quantum dot as a promising material for future photoelectronic applications.

Ultrasensitive photoelectrochemical aptasensing of miR-155 using efficient and stable CH3NH3PbI3 quantum dots sensitized ZnO nanosheets as light harvester

An ultrasensitive photoelectrochemical (PEC) aptasensor based on a novel signal amplification strategy was developed for the quantitative determination of microRNA (miR)-155. CH3NH3PbI3 quantum dots (QDs) functionalized ZnO nanosheets (NSs) were employed as the light harvester. Owing to the synergetic effect between CH3NH3PbI3 QDs and ZnO NSs, ZnO@CH3NH3PbI3 can provide an obviously increasing PEC signal by forming the heterojunction. Due to the larger steric hindrance, the sensitive decrease of the PEC signal can be achieved by the specific recognition between the primers and ssDNA of miR-155. In this sense, this developed aptasensor can achieve a high sensitivity (especially in the presence of the low concentrations of miR-155) and a wide detection range (0.01fmol/L to 20,000pmol/L). Under the optimal conditions, the proposed aptasensor offered an ultrasensitive and specific determination of miR-155 down to 0.005fmol/L. This aptassay method would open up a new promising platform at ultralow levels for early diagnose of different miRNA.