1
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Rocchino L, Balduini F, Schmid H, Molinari A, Luisier M, Süß V, Felser C, Gotsmann B, Zota CB. Magnetoresistive-coupled transistor using the Weyl semimetal NbP. Nat Commun 2024; 15:710. [PMID: 38267457 PMCID: PMC11258312 DOI: 10.1038/s41467-024-44961-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 01/04/2024] [Indexed: 01/26/2024] Open
Abstract
Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices-attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.
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Affiliation(s)
- Lorenzo Rocchino
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland.
| | - Federico Balduini
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Alan Molinari
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland
| | | | - Vicky Süß
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187, Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187, Dresden, Germany
| | - Bernd Gotsmann
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Cezar B Zota
- IBM Research Europe-Zürich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland
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2
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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3
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Zhang H, Wu Y, Huang Z, Shen X, Li B, Zhang Z, Wu R, Wang D, Yi C, He K, Zhou Y, Liu J, Li B, Duan X. Synthesis of Two-Dimensional MoO 2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect. NANO LETTERS 2023; 23:2179-2186. [PMID: 36862981 DOI: 10.1021/acs.nanolett.2c04721] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very interesting owing to their potential application in magnetic storage or sensor devices. Here, we report the synthesis of 2D MoO2 nanoplates grown by a chemical vapor deposition (CVD) method and observe large LMR and nonlinear Hall behavior in MoO2 nanoplates. As-obtained MoO2 nanoplates exhibit rhombic shapes and high crystallinity. Electrical studies indicate that MoO2 nanoplates feature a metallic nature with an excellent conductivity of up to 3.7 × 107 S m-1 at 2.5 K. MoO2 nanoplates display a large LMR of up to 455% at 3 K and -9 T. A thickness-dependent LMR analysis suggests that LMR values increase upon increasing the thickness of nanoplates. Besides, nonlinearity has been found in the magnetic-field-dependent Hall resistance, which decreases with increasing temperatures. Our studies highlight that MoO2 nanoplates are promising materials for fundamental studies and potential applications in magnetic storage devices.
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Affiliation(s)
- Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Yangwu Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Yucheng Zhou
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
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4
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Meng J, Chen X, Liu M, Jiang W, Zhang Z, Ling J, Shao T, Yao C, He L, Dou R, Xiong C, Nie J. Large linear magnetoresistance caused by disorder in WTe 2-δthin film. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:355703. [PMID: 32489186 DOI: 10.1088/1361-648x/ab8d74] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2019] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Weyl semimetal WTe2has attracted considerable attention owing to its extremely large, unsaturated and quadratic magnetoresistance. Here, we study the magnetotransport properties of WTe2-δthin film, which shows an unsaturated and linear magnetoresistance of up to ∼1650%. A more complex and accurate method, known as the maximum entropy mobility spectrum, is used to analyze the mobility and density of carriers. The results show that linear magnetoresistance can be explained by the classical disorder model because the slope of linear magnetoresistance and the crossover field are proportional to the mobility and inverse mobility, respectively. Furthermore, the validity of the maximum entropy mobility spectrum is validated by the Shubnikov-de Haas oscillations. Moreover, at low temperature, we determined that the unsaturated and near-quadratic magnetoresistance in the WTe1.93thin film can be explained by charge compensation. Note that the electron-hole compensation is broken in the WTe1.42thin film, which indicates that the carrier scattering induced by the disorder may suppress the charge compensation in the WTe2sample with defects/dopants. To summarize, the discovery of disorder-induced linear magnetoresistance allows us to explain different magnetoresistance behaviors of WTe2.
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Affiliation(s)
- Jianchao Meng
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xinxiang Chen
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Mingrui Liu
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Weimin Jiang
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Zhe Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jingzhuo Ling
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Tingna Shao
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Chunli Yao
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Lin He
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Ruifen Dou
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Changmin Xiong
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jiacai Nie
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
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5
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Wang C, Huang S, Xing Q, Xie Y, Song C, Wang F, Yan H. Van der Waals thin films of WTe 2 for natural hyperbolic plasmonic surfaces. Nat Commun 2020; 11:1158. [PMID: 32127535 PMCID: PMC7054419 DOI: 10.1038/s41467-020-15001-9] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2019] [Accepted: 02/13/2020] [Indexed: 11/16/2022] Open
Abstract
A hyperbolic plasmonic surface supports highly directional propagating polaritons with extremely large density of states. Such plasmon polaritons have been realized in artificially structured metasurfaces. However, the upper bound of the achievable plasmon wave vector is limited by the structure size, which calls for a natural hyperbolic surface without any structuring. Here, we experimentally demonstrate a natural hyperbolic plasmonic surface based on thin films of WTe2 in the light wavelength range of 16 to 23 microns by far infrared absorption spectroscopy. The topological transition from the elliptic to the hyperbolic regime is further manifested by mapping the isofrequency contours of the plasmon. Moreover, the anisotropy character and plasmon frequency exhibit prominent temperature dependence. Our study demonstrates the first natural platform to host 2D hyperbolic plasmons, which opens exotic avenues for the manipulation of plasmon propagation, light-matter interaction and light emission in planar photonics. Hyperbolic plasmonic surfaces supporting highly directional propagating plasmon-polaritons have been realized in artificial metamaterials. Here, the authors demonstrate experimentally a hyperbolic plasmonic surface naturally occurring in thin films of WTe2, a type-II Weyl semimetal with layered structure.
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Affiliation(s)
- Chong Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China. .,Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China.
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6
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Wang Y, Wang L, Liu X, Wu H, Wang P, Yan D, Cheng B, Shi Y, Watanabe K, Taniguchi T, Liang SJ, Miao F. Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe 2. NANO LETTERS 2019; 19:3969-3975. [PMID: 31082263 DOI: 10.1021/acs.nanolett.9b01275] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.
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Affiliation(s)
- Yaojia Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Xiaowei Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Heng Wu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Pengfei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Dayu Yan
- Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
| | - Bin Cheng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Youguo Shi
- Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki Tsukuba , Ibaraki 305-0044 , Japan
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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7
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Lee BC, Na J, Choi JH, Ji H, Kim GT, Joo MK. Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805860. [PMID: 30549104 DOI: 10.1002/adma.201805860] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2018] [Revised: 10/28/2018] [Indexed: 06/09/2023]
Abstract
Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas-Fermi charge screening (λTF ) and interlayer resistance (Rint ). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2 ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2 .
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Affiliation(s)
- Byung Chul Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Junhong Na
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jun Hee Choi
- Department of Physics, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Hyunjin Ji
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul, 04310, Republic of Korea
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8
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Huang SM, Chen KJ, Yan YJ, Yu SH, Chou M. The thickness-induced magneto-transport and optic properties enhancement in Sb 2Te 3 flakes. Sci Rep 2018; 8:16690. [PMID: 30420731 PMCID: PMC6232170 DOI: 10.1038/s41598-018-34857-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2018] [Accepted: 10/25/2018] [Indexed: 11/09/2022] Open
Abstract
The electric and optical properties were studied in Sb2Te3 with different thickness. It reveals the same resistivity at measured temperatures, but shows a larger magnetoresistance ratio at thicker flakes. All measured data conformed to a linear correlation between magnetoresistance ratio which is one-order enhanced, and mobility over a wide mobility range. A higher photocurrent response is observed in thicker flakes. These results support that the thickness enhances the effective carrier mobility which leads to magneto-transport and optic properties enhancement.
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Affiliation(s)
- Shiu-Ming Huang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
| | - Kai-Jui Chen
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - You-Jhih Yan
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Shih-Hsun Yu
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Mitch Chou
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.,Taiwan Consortium of Emergent Crystalline Materials, TCECM, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
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9
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Di Sante D, Das PK, Bigi C, Ergönenc Z, Gürtler N, Krieger JA, Schmitt T, Ali MN, Rossi G, Thomale R, Franchini C, Picozzi S, Fujii J, Strocov VN, Sangiovanni G, Vobornik I, Cava RJ, Panaccione G. Three-Dimensional Electronic Structure of the Type-II Weyl Semimetal WTe_{2}. PHYSICAL REVIEW LETTERS 2017; 119:026403. [PMID: 28753342 DOI: 10.1103/physrevlett.119.026403] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2017] [Indexed: 06/07/2023]
Abstract
By combining bulk sensitive soft-x-ray angular-resolved photoemission spectroscopy and first-principles calculations we explored the bulk electron states of WTe_{2}, a candidate type-II Weyl semimetal featuring a large nonsaturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we directly observe a three-dimensional electronic dispersion. We report a band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the Γ point, differently from previous more surface sensitive angle-resolved photoemission spectroscopy experiments that additionally found a pronounced quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of WTe_{2} around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.
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Affiliation(s)
- Domenico Di Sante
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany
| | - Pranab Kumar Das
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
- International Centre for Theoretical Physics (ICTP), Strada Costiera 11, I-34100 Trieste, Italy
| | - C Bigi
- Dipartimento di Fisica, Universitá di Milano, Via Celoria 16, I-20133 Milano, Italy
| | - Z Ergönenc
- Computational Materials Physics, University of Vienna, Sensengasse 8/8, A-1090 Vienna, Austria
| | - N Gürtler
- Computational Materials Physics, University of Vienna, Sensengasse 8/8, A-1090 Vienna, Austria
| | - J A Krieger
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
- Laboratorium für Festkörperphysik, ETH-Hönggerberg, CH-8093 Zürich, Switzerland
| | - T Schmitt
- Paul Scherrer Institute, Swiss Light Source, CH-5232 Villigen, Switzerland
| | - M N Ali
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
| | - G Rossi
- Dipartimento di Fisica, Universitá di Milano, Via Celoria 16, I-20133 Milano, Italy
| | - R Thomale
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany
| | - C Franchini
- Computational Materials Physics, University of Vienna, Sensengasse 8/8, A-1090 Vienna, Austria
| | - S Picozzi
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Via Vetoio, L'Aquila 67100, Italy
| | - J Fujii
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - V N Strocov
- Paul Scherrer Institute, Swiss Light Source, CH-5232 Villigen, Switzerland
| | - G Sangiovanni
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg 97074, Germany
| | - I Vobornik
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - R J Cava
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
| | - G Panaccione
- Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy
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