Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3. Suitable evaporation temperatures for the SnI4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225-600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established.

Polyethylenimine-Ethoxylated Interfacial Layer for Efficient Electron Collection in SnO2-Based Inverted Organic Solar Cells

In this work, we studied inverted organic solar cells based on bulk heterojunction using poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C71-butyric acid methyl ester (P3HT:PCBM) as an active layer and a novel cathode buffer bilayer consisting of tin dioxide (SnO2) combined with polyethylenimine-ethoxylated (PEIE) to overcome the limitations of the single cathode buffer layer. The combination of SnO2 with PEIE is a promising approach that improves the charge carrier collection and reduces the recombination. The efficient device, which is prepared with a cathode buffer bilayer of 20 nm SnO2 combined with 10 nm PEIE, achieved Jsc = 7.86 mA/cm2, Voc = 574 mV and PCE = 2.84%. The obtained results exceed the performances of reference solar cell using only a single cathode layer of either SnO2 or PEIE.

Photon management properties of Yb-doped SnO2 nanoparticles synthesized by the sol-gel technique

SnO2 is a transparent large band gap semiconductor, particularly interesting for optoelectronic and photovoltaic devices, mainly because its conduction can be easily tuned by doping or by modulating the amount of oxygen vacancies. Besides, rare earth doping was successfully exploited for up conversion properties. Here we report on the functionalization of SnO2 nanoparticles with optically active Yb3+ ions using the sol-gel method, which allows UV to NIR spectral (down) conversion. As starting solutions we used stable non-alkoxide metal-organic compounds, which is rather uncommon. Transmission electron microscopy analysis demonstrated the formation of small well-crystallized nanoparticles while X-ray photoelectron spectroscopy measurements have revealed that the Yb is well inserted in the host matrix and has a 3+ valence state. All nanoparticles present large absorption in the UV-visible range (250 to 550 nm) and a band gap that decreases down to 2.72 eV upon doping. The UV energy converted into NIR on the basis of efficient energy transfer from SnO2 to the Yb3+ ions ranges between 250 and 400 nm. Reference undoped SnO2 nanoparticles with a mean size of 20 nm allow converting UV light into broad visible emission centered at 650 nm. The incorporation of up to 3.5 at% of Yb3+ ions into the SnO2 host matrix results in a spectacular decrease of the nanoparticle size down to 6.6 nm. This allowed also the shift of the photoluminescence to NIR in the 970-1050 nm range. The energy level structure of Yb3+ in SnO2 was successfully determined from the deconvolution of the Yb emission. This emission is significantly enhanced by increasing the doping level. All optical measurements suggest that these nanoparticles can be efficiently used as down-shifting converters.

Nanoscale insights into doping behavior, particle size and surface effects in trivalent metal doped SnO2

Despite considerable research, the location of an aliovalent dopant into SnO₂ nanoparticles is far to be clarified. The aim of the present study on trivalent lanthanide doped SnO₂ is to differentiate between substitutional versus interstitial and surface versus bulk doping, delineate the bulk and surface defects induced by doping and establish an intrinsic dopant distribution. We evidence for the first time a complex distribution of intrinsic nature composed of substitutional isolated, substitutional associates with defects as well as surface centers. Such multi-modal distribution is revealed for Eu and Sm, while Pr, Tb and Dy appear to be distributed mostly on the SnO₂ surface. Like the previously reported case of Eu, Sm displays a long-lived luminescence decaying in the hundreds of ms scale which is likely related to a selective interaction between the traps and the substitutional isolated center. Analyzing the time-gated luminescence, we conclude that the local lattice environment of the lattice Sn is not affected by the particle size, being remarkably similar in the ~2 and 20 nm particles. The photocatalytic measurements employed as a probe tool confirm the conclusions from the luminescence measurements concerning the nature of defects and the temperature induced migration of lanthanide dopants.