Point defects in turbostratic stacked bilayer graphene

Various defects in graphene: a review

Pristine graphene has been considered one of the most promising materials because of its excellent physical and chemical properties. However, various defects in graphene produced during synthesis or fabrication hinder its performance for applications such as electronic devices, transparent electrodes, and spintronic devices. Due to its intrinsic bandgap and nonmagnetic nature, it cannot be used in nanoelectronics or spintronics. Intrinsic and extrinsic defects are ultimately introduced to tailor electronic and magnetic properties and take advantage of their hidden potential. This article emphasizes the current advancement of intrinsic and extrinsic defects in graphene for potential applications. We also discuss the limitations and outlook for such defects in graphene.

Effect of point defects on acetylene hydrogenation reaction over Ni(111) surface: a density functional theory study

Density functional theory (DFT) calculations are carried out to investigate the effect of point defects on acetylene hydrogenation reaction over Ni(111) surface with three different defect concentrations (DC = 0.0500, 0.0625, and 0.0833), compared with the perfect Ni(111) surface. The adsorptions of C₂ species and H atoms and the mechanism of acetylene hydrogenation via the ethylene pathway are systematically analyzed. The results indicate that the existence of defects will make C₂ species and H atoms more inclined to adsorb near the defects. Introducing an appropriate amount of point defect concentration can enhance the catalytic activity and ethylene selectivity of Ni. In this work, DC = 0.0625 Ni(111) surface has the highest catalytic activity and selectivity of ethylene. This work provides useful theoretical information on the effect of defects on acetylene hydrogenation and is helpful for the design of Ni and related metal catalysts with defects.

Binding Free Energy Calculations of Bilayer Graphenes Using Molecular Dynamics

Bilayer graphenes are dimeric assemblies of single graphene layers bound together by π-complexation interactions. Controlling these assemblies can be complicated, as the layered compounds disperse in solvents or aggregate into higher columnar configurations and clusters. One way to assess the interactions that contribute to the stability of the layered compounds is to use molecular simulation. We perform pulling molecular dynamics on bilayer graphenes with different sizes and obtain the normal and shear force profiles of dissociation. We generate pathways of dissociation along the two directions and calculate the binding free energies of the structures with umbrella sampling simulations. We show that the dissociation process is direction-dependent. Along the shear direction, we compute the same free energy for the different samples, which validates the consistency of our simulations. We notice that the dissociation is less adiabatic on the normal than the shear direction, having an entropic contribution to the Gibbs energy. This contribution is more enhanced for the larger bilayer graphenes.