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Shugurov KY, Mozharov AM, Fedorov VV, Blokhin SA, Neplokh VV, Mukhin IS. Extremely high frequency Schottky diodes based on single GaN nanowires. NANOTECHNOLOGY 2023; 34:245204. [PMID: 36928235 DOI: 10.1088/1361-6528/acc4cb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 03/15/2023] [Indexed: 06/18/2023]
Abstract
Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on individual GaN nanowires. The electrical characterization ofI-Vcurves demonstrated relatively high ideality factor value (about 6-9) in comparison to the planar Au/GaN diodes that can be attributed to the nanowire geometry. The effective barrier height in the studied structures was defined in the range of 0.25-0.4 eV. The small-signal frequency analysis was employed to study the dependency of the scattering parameters in the broad range from 0.1 to 40 GHz. The approximation fitting of the experimental data indicated the record high cutoff frequency of about 165.8 GHz.
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Affiliation(s)
| | | | - V V Fedorov
- Alferov University, Saint-Petersburg, Russia
| | | | - V V Neplokh
- Alferov University, Saint-Petersburg, Russia
- Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, Russia
- St. Petersburg State University, Saint-Petersburg, Russia
| | - I S Mukhin
- Alferov University, Saint-Petersburg, Russia
- Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, Russia
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2
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Dvoretckaia L, Gridchin V, Mozharov A, Maksimova A, Dragunova A, Melnichenko I, Mitin D, Vinogradov A, Mukhin I, Cirlin G. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates. NANOMATERIALS 2022; 12:nano12121993. [PMID: 35745332 PMCID: PMC9230727 DOI: 10.3390/nano12121993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/06/2022] [Accepted: 06/07/2022] [Indexed: 12/19/2022]
Abstract
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.
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Affiliation(s)
- Liliia Dvoretckaia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Vladislav Gridchin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alexey Mozharov
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alina Maksimova
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Anna Dragunova
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Ivan Melnichenko
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Dmitry Mitin
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Alexandr Vinogradov
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Ivan Mukhin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
- Correspondence:
| | - Georgy Cirlin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
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Miroshnichenko AS, Deriabin KV, Baeva M, Kochetkov FM, Neplokh V, Fedorov VV, Mozharov AM, Koval OY, Krasnikov DV, Sharov VA, Filatov NA, Gets DS, Nasibulin AG, Makarov SV, Mukhin IS, Kukushkin VY, Islamova RM. Flexible Perovskite CsPbBr 3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones. J Phys Chem Lett 2021; 12:9672-9676. [PMID: 34590867 DOI: 10.1021/acs.jpclett.1c02611] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone rubbers and the semiconductor materials with original fabrication methods to design LEDs and demonstrate their significant flexibility. We developed electrodes based on a composite GaP nanowire-phenylethyl-functionalized silicone rubber membrane, improved with single-walled carbon nanotube films for a hybrid poly(ethylene oxide)-metal-halide perovskite (CsPbBr3) flexible green LED. The proposed approach provides a novel platform for fabrication of flexible hybrid optoelectronic devices.
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Affiliation(s)
- Anna S Miroshnichenko
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Konstantin V Deriabin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
| | - Maria Baeva
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, 5 Ulitsa Radio, 690041 Vladivostok, Russian Federation
| | - Fedor M Kochetkov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Vladimir Neplokh
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vladimir V Fedorov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Alexey M Mozharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Olga Yu Koval
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry V Krasnikov
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
| | - Vlad A Sharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Nikita A Filatov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry S Gets
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
- Aalto University, P.O. Box 151100, Espoo FI-00076, Finland
| | - Sergey V Makarov
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Ivan S Mukhin
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vadim Yu Kukushkin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- South Ural State University, 76 Lenin Avenue, 454080 Chelyabinsk, Russian Federation
| | - Regina M Islamova
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
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Shugurov KY, Mozharov AM, Bolshakov AD, Fedorov VV, Sapunov GA, Shtrom IV, Uvarov AV, Kudryashov DA, Baranov AI, Yu Mikhailovskii V, Neplokh VV, Tchernycheva M, Cirlin GE, Mukhin IS. Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. NANOTECHNOLOGY 2020; 31:244003. [PMID: 32066120 DOI: 10.1088/1361-6528/ab76f2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.
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Affiliation(s)
- K Yu Shugurov
- Alferov university (former St Petersburg Academic university), Khlopina 8/3, 194021, St. Petersburg, Russia
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Wu Y, Liu B, Li Z, Tao T, Xie Z, Wang K, Xiu X, Chen D, Lu H, Zhang R, Zheng Y. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates. NANOTECHNOLOGY 2020; 31:045604. [PMID: 31578003 DOI: 10.1088/1361-6528/ab4a4b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Gallium nitride (GaN)-based nanowires (NWs) have attracted much attention for the fabrication of novel nanostructured devices. In this paper, the influence of an AlN seeding layer on the nucleation of self-assembled GaN NWs grown by plasma-assisted molecular beam epitaxy (MBE) on Si (111) substrates has been investigated. Not only is the formation of a two-dimensional compact GaN layer at the bottom of the NWs suppressed, but also a high density of vertically aligned well-separated GaN NWs originating from GaN islands are successfully obtained after introducing annealing and nitridation processes. Scanning electronic microscope and transmission electron microscope measurements show that the NWs have a high crystalline wurtzite structure nearly free of dislocations and stacking faults and the NW diameter remains constant over almost the entire length. Due to the temperature-dependent diffusion length of Ga adatoms during the nucleation process, the formation of well-separated NWs relies on the distribution and morphology of the underlying AlN seeding layer. Moreover, the SiNx layer served as mask to inhibit coalescence at the nucleation sites. The developed growth processes and the obtained results provide a viable path facilitating the use of MBE growth techniques to fabricate III-nitride NW-based materials and related devices on Si substrates.
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Affiliation(s)
- Yaozheng Wu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
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Koval OY, Fedorov VV, Kryzhanovskaya NV, Sapunov GA, Kirilenko DA, Pirogov EV, Filosofov NG, Serov AY, Shtrom IV, Bolshakov AD, Mukhin IS. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon. CrystEngComm 2020. [DOI: 10.1039/c9ce01498e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Despite poor crystallinity, a dilute nitride phosphide heterostructure with 5% nitrogen content demonstrates PL response at RT centered at 1.76 eV.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Igor V. Shtrom
- St. Petersburg Academic University
- St. Petersburg
- Russia
- St. Petersburg University
- St Petersburg 199034
| | | | - Ivan S. Mukhin
- St. Petersburg Academic University
- St. Petersburg
- Russia
- ITMO University
- St. Petersburg
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7
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Bolshakov AD, Fedorov VV, Shugurov KY, Mozharov AM, Sapunov GA, Shtrom IV, Mukhin MS, Uvarov AV, Cirlin GE, Mukhin IS. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si. NANOTECHNOLOGY 2019; 30:395602. [PMID: 31234150 DOI: 10.1088/1361-6528/ab2c0c] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaO x buffer layers, monolayer thick Ga wetting layer and GaN seeding layer prepared by the droplet epitaxy is performed. It is demonstrated that the homogeneity and the morphology of the NW arrays drastically depend on the chosen buffer layer and surface preparation technique. An effect of the buffer and seeding layers on the nucleation and desorption is also discussed. The lowest NWs surface density of 14 μm-2 is obtained on AlN buffer layer and the highest density exceeding the latter value by more than an order of magnitude corresponds to the growth on the 0.3 ML thick Ga wetting layer. It is shown, that the highest NWs mean elongation rate is obtained with AlN buffer layer, while the lowest elongation rate corresponds to the bare Si (111) surface and it is twice as lower as the first case. It is found, that use of AlN buffer layer corresponds to the most homogeneous NWs array with the smallest length dispersion while the least homogeneous array corresponds to the bare Si substrate. Vertically aligned GaN NWs array on the wide bandgap GaO x semiconductor buffer layer grown by plasma-enhanced chemical vapor deposition demonstrates its potential for electronic applications. Photoluminescence (PL) study of the synthesized samples is characterized by an intense optical response related to the excitons bound to neutral donors. The highest PL intensity is obtained in the sample with AlN buffer layer.
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Affiliation(s)
- A D Bolshakov
- St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia
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Tyagi P, Ramesh C, Yadav BS, Kushvaha SS, Kumar MS. Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate. CrystEngComm 2019. [DOI: 10.1039/c9ce00855a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.
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Affiliation(s)
- Prashant Tyagi
- CSIR-National Physical Laboratory
- Dr. K. S. Krishnan Marg
- New Delhi 110012
- India
- Academy of Scientific and Innovative Research (AcSIR)
| | - Ch. Ramesh
- CSIR-National Physical Laboratory
- Dr. K. S. Krishnan Marg
- New Delhi 110012
- India
- Academy of Scientific and Innovative Research (AcSIR)
| | - B. S. Yadav
- Solid State Physics Laboratory
- New Delhi 110054
- India
| | - S. S. Kushvaha
- CSIR-National Physical Laboratory
- Dr. K. S. Krishnan Marg
- New Delhi 110012
- India
- Academy of Scientific and Innovative Research (AcSIR)
| | - M. Senthil Kumar
- CSIR-National Physical Laboratory
- Dr. K. S. Krishnan Marg
- New Delhi 110012
- India
- Academy of Scientific and Innovative Research (AcSIR)
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