Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most transition metal compounds do not possess room-temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high-quality monolayers to multilayers.

Strains Induced Magnetic Hysteresis in MoS2 and WS2 Monolayers with Symmetric Double Sulfur Vacancy Defects

It has been found that magnetism in two-dimensional (2D) transition metal dichalco-genides can be realized by properly introducing vacancies and applying strains. However, not a work has clearly clarified the...

Substitution of copper atoms into defect-rich molybdenum sulfides and their electrocatalytic activity

Studies on intercalation or substitution of atoms into layered two-dimensional (2D) materials are rapidly expanding and gaining significant consideration due to their importance in electronics, catalysts, batteries, sensors, etc. In this manuscript, we report a straightforward method to create sulphur (S) deficient molybdenum (Mo) sulfide (MoS_2-x ) structures and substitute them with zerovalent copper (Cu) atoms using a colloidal synthesis method. The synthesized materials were studied using several techniques to understand the proportion and position of copper atoms and the effect of copper functionalization. Specifically, the impact of change in the ratio of Cu : S and the hydrogen evolution reaction (HER) activity of the derived materials were evaluated. This technique paves the way for the synthesis of various functionalized 2D materials with a significant impact on their physical and chemical behavior making them potential candidates for catalysis and several other applications such as energy storage and the development of numerous functional devices.

Visible Light-Driven Mn-MoS2/rGO Composite Photocatalysts for the Photocatalytic Degradation of Rhodamine B

The n%Mn-MoS2/rGO (labeled as n%MMS/rGO, where n% = Mn/(Mn + Mo) in mol) composites were successfully prepared by a facile hydrothermal method from the Mn-MoS2 (MMS) and rGO precursors, in which the MMS was obtained by a facile one-step calcination of (NH4)6Mo7O24·4H2O, (NH2)2CS, and Mn(CH3COO)2·4H2O as precursors in N2 gas at 650°C. The samples were characterized using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron paramagnetic resonance spectroscopy (EPR), UV-visible diffuse reflectance spectroscopy (UV-Vis DRS), and X-ray photoelectron spectroscopy (XPS), which indicates the composites containing nanosheets of Mn-MoS2 and rGO components. The photocatalytic activities of the n%MMS/rGO composite photocatalysts were evaluated through the photodegradation of rhodamine B (RhB) under the visible light irradiation. The enhancement in the photocatalytic performance of the achieved composites was attributed to the synergic effect of Mn doping and rGO matrix. The investigation of photocatalytic mechanism was also conducted.

Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis

Doping lies at the heart of modern semiconductor technologies. Therefore, for two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), the significance of controlled doping is no exception. Recent studies have indicated that, by substitutionally doping 2D TMDs with a judicious selection of dopants, their electrical, optical, magnetic, and catalytic properties can be effectively tuned, endowing them with great potential for various practical applications. Herein, and inspired by the sol-gel process, we report a liquid-phase precursor-assisted approach for in situ substitutional doping of monolayered TMDs and their in-plane heterostructures with tunable doping concentration. This highly reproducible route is based on the high-temperature chalcogenation of spin-coated aqueous solutions containing host and dopant precursors. The precursors are mixed homogeneously at the atomic level in the liquid phase prior to the synthesis process, thus allowing for an improved doping uniformity and controllability. We further demonstrate the incorporation of various transition metal atoms, such as iron (Fe), rhenium (Re), and vanadium (V), into the lattice of TMD monolayers to form Fe-doped WS₂, Re-doped MoS₂, and more complex material systems such as V-doped in-plane W_xMo_1-xS₂-Mo_xW_1-xS₂ heterostructures, among others. We envisage that our developed approach is universal and could be extended to incorporate a variety of other elements into 2D TMDs and create in-plane heterointerfaces in a single step, which may enable applications such as electronics and spintronics at the 2D limit.