The dielectric constant of a bilayer graphene interface

Modulation of Electrokinetic Potentials Using Graphene-Based Surfaces and Variable Substrate Charge Density

Enhanced electrokinetic phenomena, manifested through the observation of a large streaming potential (Vs), were obtained in microchannels with single-layer graphene (SLG)-coated and few-layer graphene (FLG)-coated surfaces. In comparison to silicon microchannels, the Vs obtained for a given pressure difference along the channel (ΔP) was higher by 75% for the graphene-based channels, with larger values in the SLG case. Computational modeling was used to correlate the surface charge density, tuned through plasma processing, and related zeta potential to measured Vs. The implications related to deploying lower dimensional material surfaces for modulating electrokinetic flows were investigated.

Surface polarization enhances ionic transport and correlations in electrolyte solutions nanoconfined by conductors

Layered materials that perform mixed electron and ion transport are promising for energy harvesting, water desalination, and bioinspired functionalities. These functionalities depend on the interaction between ionic and electronic charges on the surface of materials. Here we investigate ion transport by an external electric field in an electrolyte solution confined in slit-like channels formed by two surfaces separated by distances that fit only a few water layers. We study different electrolyte solutions containing monovalent, divalent, and trivalent cations, and we consider walls made of non-polarizable surfaces and conductors. We show that considering the surface polarization of the confining surfaces can result in a significant increase in ionic conduction. The ionic conductivity is increased because the conductors' screening of electrostatic interactions enhances ionic correlations, leading to faster collective transport within the slit. While important, the change in water's dielectric constant in confinement is not enough to explain the enhancement of ion transport in polarizable slit-like channels.

Manipulation and Characterization of Submillimeter Shearing Contacts in Graphite by the Micro-Dome Technique

Manipulation techniques are the key to measuring fundamental properties of layered materials and their monolayers (2D materials) on the micro- and nanoscale as well as a necessity to the solution of relevant existing challenges. An example is the challenge against upscaling structural superlubricity, a phenomenon of near-zero friction and wear in solid contacts. To date, the largest single structural superlubric contact only has a size of a few tens of micrometers, which is achieved on graphite mesa, a system that has shown microscale superlubricity. The first obstacle against extending the contact size is the lack of suitable manipulation techniques. Here, a micro-dome technique is demonstrated on graphite mesas by shearing contacts 2500 times larger in area than previously possible. With this technique, submillimeter graphite mesas are opened, characterized for the first time, and compared to their microscale counterparts. Interfacial structures, which are possibly related to the failure of superlubricity, are observed: commensurate grains, external steps, and carbon aggregates. Furthermore, a proof-of-concept mechanical model is developed to understand how the micro-dome technique works and to predict its limits. Finally, a dual-axis force measuring device is developed and integrated with the micro-dome technique to measure the normal and lateral forces when shearing submillimeter mesas. These results provide a platform technique for future research on structural superlubricity on different scales and manipulation of structures of layered materials in general.

Spontaneous Spin and Valley Symmetry-Broken States of Interacting Massive Dirac Fermions in a Bilayer Graphene Quantum Dot

We predict the existence of spontaneous spin and valley symmetry-broken states of interacting massive Dirac Fermions in a gated bilayer graphene quantum dot based on the exact diagonalization of the many-body Hamiltonian. The dot is defined by a vertical electric field and lateral gates, and its single-particle (SP) energies, wave functions, and Coulomb matrix elements are computed by using the atomistic tight-binding model. The effect of the Coulomb interaction is measured by the ratio of Coulomb elements to the SP level spacing. As we increase the interaction strength, we find the electrons in a series of spin and valley symmetry-broken phases with increasing valley and spin polarizations. The phase transitions result from the competition of the SP, exchange, and correlation energy scales. A phase diagram for N = 1-6 electrons is mapped out as a function of the Coulomb interaction strength.

Tuning the many-body interactions in a helical Luttinger liquid

In one-dimensional (1D) systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga-Luttinger Liquid (TLL). The strength of its many-body correlations can be quantified by a single dimensionless parameter, the Luttinger parameter K, characterising the competition between the electrons’ kinetic and electrostatic energies. Recently, signatures of a TLL have been reported for the topological edge states of quantum spin Hall (QSH) insulators, strictly 1D electronic structures with linear (Dirac) dispersion and spin-momentum locking. Here we show that the many-body interactions in such helical Luttinger Liquid can be effectively controlled by the edge state’s dielectric environment. This is reflected in a tunability of the Luttinger parameter K, distinct on different edges of the crystal, and extracted to high accuracy from the statistics of tunnelling spectra at tens of tunnelling points. The interplay of topology and many-body correlations in 1D helical systems has been suggested as a potential avenue towards realising non-Abelian parafermions.

In one-dimensional systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga Luttinger Liquid (TLL), as recently reported in the helical edge states of quantum spin Hall insulators. Here, the authors show that the many-body interactions in the helical TLL of 1T’- WTe2 can be effectively controlled by the dielectric screening via the substrate.

Phonon-Limited Mobility in h-BN Encapsulated AB-Stacked Bilayer Graphene

The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of the shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. Using a microscopic tight-binding model, we reproduce experimental temperature dependence of mobilities in high-quality boron nitride encapsulated bilayer samples at temperatures up to ∼200  K. At elevated temperatures, the surface polar phonon scattering from boron nitride substrate contributes significantly to the measured mobilities of 15 000 to 20000  cm^{2}/Vs at room temperature and carrier concentration n∼10^{12}  cm^{-2}. A screened surface polar phonon potential for a dual-encapsulated bilayer and transferable tight-binding model allows us to predict mobility scaling with temperature and band gap for both electrons and holes in agreement with the experiment.

Edge State Quantum Interference in Twisted Graphitic Interfaces

Zigzag edges in graphitic systems exhibit localized electronic states that drastically affect their properties. Here, room-temperature charge transport experiments across a single graphitic interface are reported, in which the interlayer current is confined to the contact edges. It is shown that the current exhibits pronounced oscillations of up to ≈40 µA with a dominant period of ≈5 Å with respect to lateral displacement that do not directly correspond to typical graphene lattice spacing. The origin of these features is computationally rationalized as quantum mechanical interference of localized edge states showing significant amplitude and interlayer coupling variations as a function of the interface stacking configuration. Such interference effects may therefore dominate the transport properties of low-dimensional graphitic interfaces.

Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.

Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

2D materials are considered to be the most promising materials for photodetectors due to their unique optical and electrical properties. Since the discovery of graphene, many photodetectors based on 2D materials have been reported. However, the low quantum efficiency, large noise, and slow response caused by the thinness of 2D materials limit their application in photodetectors. Here, recent progress on 2D material photodetectors is reviewed, covering the spectrum from ultraviolet to terahertz waves. First the interaction of 2D materials with light is analyzed in terms of optical physics. Then the present methods to improve the performance of 2D material photodetectors are summarized, such as defect engineering, p-n junctions and hybrid detectors, and the issue of serious overestimation of the performance in reported photodetectors based on 2D materials is discussed. Next, a comparison of 2D material photodetectors with traditional commercially available detectors shows that it is difficult to balance the current 2D material photodetectors with regard to having simultaneously both high sensitivity and fast response. Finally, a possible novel EIW mechanism is suggested to advance the performance of 2D material photodetectors in the future.

Exploring the optoelectronic and third-order nonlinear optical susceptibility of cross-shaped molecules: insights from molecule to material level

In the present investigation, we use a dual computational approach (at single molecular and solid-state levels) to explore the optoelectronic and nonlinear optical (NLO) properties of cross-shaped derivatives. The solid-state electronic band structures of the compounds 1-3 (the derivatives of tetracarboxylic acid in cross-shaped having the core of benzene (1), pyrazinoquinoxaline (2), and tetrathiafulvalene (3)) are calculated. The calculated band gaps for compounds 1-2 are found to be direct bad gaps and compound 3 to be indirect bad gap with energy gaps of 2.749, 1.765, and 0.875 eV, respectively. The important optical properties including refractive index, absorption coefficients, loss functions, and extinction coefficient of these semiconductors are calculated at bulk level to seek their potential applications as efficient optoelectronic materials. Additionally, we use the Lorentz approximation to calculate the third-order NLO susceptibilities of compounds 1-3 using the molecular hyperpolarizability and solid-state parameters. The calculated third-order NLO susceptibilities of compounds 1-3 are found to be 6.92 × 10^-12, 64.0 × 10^-12, and 26.3 × 10^-12 esu, respectively. Thus, the present study not only provides a way to connect the calculated third-order molecular NLO polarizability to NLO susceptibilities for compounds 1-3 through Lorentz approximation but also highlights the importance of central core modifications on their NLO susceptibilities.

The scaling laws of edge vs. bulk interlayer conduction in mesoscale twisted graphitic interfaces

The unusual electronic properties of edges in graphene-based systems originate from the pseudospinorial character of their electronic wavefunctions associated with their non-trivial topological structure. This is manifested by the appearance of pronounced zero-energy electronic states localized at the material zigzag edges that are expected to have a significant contribution to the interlayer transport in such systems. In this work, we utilize a unique experimental setup and electronic transport calculations to quantitatively distinguish between edge and bulk transport, showing that their relative contribution strongly depends on the angular stacking configuration and interlayer potential. Furthermore, we find that, despite of the strong localization of edge state around the circumference of the contact, edge transport in incommensurate interfaces can dominate up to contact diameters of the order of 2 μm, even in the presence of edge disorder. The intricate interplay between edge and bulk transport contributions revealed in the present study may have profound consequences on practical applications of nanoscale twisted graphene-based electronics.