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Wang L, Guo Z, Lan Q, Song W, Zhong Z, Yang K, Zhao T, Huang H, Zhang C, Shi W. Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics. MICROMACHINES 2023; 14:2125. [PMID: 38004982 PMCID: PMC10673063 DOI: 10.3390/mi14112125] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 11/17/2023] [Accepted: 11/18/2023] [Indexed: 11/26/2023]
Abstract
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we present an electron-beam (e-beam) doping approach to achieve controllable carrier doping effects in graphene and MoS2 field-effect transistors (FETs) by leveraging charge-trapping oxide dielectrics. By adding an atomic layer deposition (ALD)-grown Al2O3 dielectric layer on top of the SiO2/Si substrate, we demonstrate that controllable and reversible carrier doping effects can be effectively induced in graphene and MoS2 FETs through e-beam doping. This new device configuration establishes an oxide interface that enhances charge-trapping capabilities, enabling the effective induction of electron and hole doping beyond the SiO2 breakdown limit using high-energy e-beam irradiation. Importantly, these high doping effects exhibit non-volatility and robust stability in both vacuum and air environments for graphene FET devices. This methodology enhances carrier modulation capabilities in 2D materials and holds great potential for advancing the development of scalable 2D nano-devices.
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Affiliation(s)
- Lu Wang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Zejing Guo
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Qing Lan
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Wenqing Song
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Zhipeng Zhong
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, China
| | - Kunlin Yang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Tuoyu Zhao
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Hai Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Wu Shi
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
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Pizzocchero F, Jessen BS, Gammelgaard L, Andryieuski A, Whelan PR, Shivayogimath A, Caridad JM, Kling J, Petrone N, Tang PT, Malureanu R, Hone J, Booth TJ, Lavrinenko A, Bøggild P. Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly. ACS OMEGA 2022; 7:22626-22632. [PMID: 35811885 PMCID: PMC9260747 DOI: 10.1021/acsomega.2c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
The purity and morphology of the copper surface is important for the synthesis of high-quality, large-grained graphene by chemical vapor deposition. We find that atomically smooth copper foils-fabricated by physical vapor deposition and subsequent electroplating of copper on silicon wafer templates-exhibit strongly reduced surface roughness after the annealing of the copper catalyst, and correspondingly lower nucleation and defect density of the graphene film, when compared to commercial cold-rolled copper foils. The "ultrafoils"-ultraflat foils-facilitate easier dry pickup and encapsulation of graphene by hexagonal boron nitride, which we believe is due to the lower roughness of the catalyst surface promoting a conformal interface and subsequent stronger van der Waals adhesion between graphene and hexagonal boron nitride.
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Affiliation(s)
- Filippo Pizzocchero
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Bjarke S. Jessen
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Lene Gammelgaard
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Andryieuski
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Patrick R. Whelan
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Materials and Production, Aalborg University, Skjernvej 4A, Aalborg 9220, Denmark
| | - Abhay Shivayogimath
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - José M. Caridad
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Applied Physics and USAL NanoLab, University
of Salamanca, 37008 Salamanca, Spain
| | - Jens Kling
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Nanolab, Technical University of Denmark, Fysikvej 307, Kongens Lyngby 2800, Denmark
| | - Nicholas Petrone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Peter T. Tang
- IPU,
Danmarks Tekniske Universitet, Produktionstorvet 425, Kongens Lyngby 2800 Denmark
| | - Radu Malureanu
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - James Hone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Timothy J. Booth
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Lavrinenko
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Peter Bøggild
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
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Fan S, Tang X, Zhang D, Hu X, Liu J, Yang L, Su J. Ambipolar and n/p-type conduction enhancement of two-dimensional materials by surface charge transfer doping. NANOSCALE 2019; 11:15359-15366. [PMID: 31386753 DOI: 10.1039/c9nr05343c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
The controllable and wide-range modulation of the carrier type and mobility in atomically thin two-dimensional (2D) materials is one of the most critical issues to be addressed before 2D materials can be practically used for future electronic and optoelectronic devices. In this work, we propose using a novel surface charge transfer mechanism to accomplish the controllable and wide-range modulation of the carrier type and mobility in 2D materials. Our methodology uses a solution of triphenylboron (TPB) to physically coat 2D materials; the TPB molecule contains positive and negative charge centers that are spatially separable when induced by an electrical field. Consequently, the TPB can transfer either positive or negative charges to 2D materials depending on the direction of the applied electrical field and thus enhance the ambipolar behavior of the 2D-material FET. This method is so versatile that seven types of 2D materials including graphene, black phosphorus and five transition metal dichalcogenides (TMDCs) can be modulated to strong ambipolar behavior with significantly increased conduction. In addition, selectively suppressing or enhancing the negative charge center enables solely p-type and n-type doping. We also accomplish the precise tuning of carrier mobility in TMDCs from ambipolar to p-type by coating a mixture of TPB/BCF in certain concentration ratios.
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Affiliation(s)
- Shuangqing Fan
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China.
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