Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers

Two-dimensional wide-bandgap GeSe2 vertical ultraviolet photodetectors with high responsivity and ultrafast response speed

Germanium selenide (GeSe₂), as a typical member of 2D wide bandgap semiconductors (WBSs), shows great potential in ultraviolet (UV) optoelectronics due to its excellent flexibility, superior environmental stability, competitive UV absorption coefficient, and significant spectral selectivity. However, the GeSe₂-based UV photodetector suffers from high operation voltages and low photocurrent, which prevents its practical imaging applications. In this work, we report an elevated photocurrent generation in a vertical stacking graphene/GeSe₂/graphene heterostructure with low operation voltage and low power consumption. Efficient collection of photoexcited carriers in GeSe₂ through graphene electrodes results in outstanding UV detection properties, including a pronounced responsivity of 37.1 A W^-1, a specific detectivity of 8.83 × 10¹¹ Jones, and an ultrahigh on/off ratio (∼10⁵) at 355 nm. In addition, building a Schottky barrier between GeSe₂ and graphene and reducing the channel length can increase the photoresponse speed to ∼300 μs. These accomplishments set the stage for future optoelectronic applications of vertical 2D WBS heterostructure UV photodetectors.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

2D BeP2 monolayer: investigation of electronic and optical properties by driven modulated strain

Recently, the two-dimensional (2D) material beryllium diphosphide (BeP₂) has attracted significant attention for potential device applications due to its Dirac semimetal state, dynamic and thermal stability, and high carrier mobility. In this work, we investigated its electronic and optical properties under biaxial Lagrangian strain using density functional theory (DFT). Electronic band gaps and effective charge carrier mass were highly sensitive to the Lagrangian strain of BeP₂ monolayer. The bandgaps of BeP₂ varied from 0 eV to 0.30 eV for 2% to 8% strain, where the strain range is based on the final stable condition of the system. The absorption spectra for the dielectric properties show the highest absorption peaks in the infrared (IR) region. These abundant strain-dependent studies of the BeP₂ monolayer provide guidelines for its application in infrared sensors and devices.

BeP₂ monolayer is a promising material for the novel IR optical device.