Novel two-dimensional silicon-carbon binaries by crystal structure prediction

Effect and mechanism analysis of surface hydrogenation and fluorination on the electronic properties of th-GeC2

A two-dimensional (2D) tetrahex-GeC2 nanosheet demonstrates excellent electronic properties such as a finite direct band gap and high carrier mobilities, as predicted from theoretical calculations. To further expand its potential applications, various strategies can be employed to tailor its electronic properties. These strategies include alloying, strain application, and edge and surface functionalization. This work specifically focuses on the impact of surface functionalization with hydrogen and fluorine adsorption on the 2D tetrahex-GeC2 nanostructures. It was discovered that the electronic properties of these nanostructures undergo significant alterations through surface functionalization by adjusting the adsorption sites and coverage of H/F species. The underlying mechanisms responsible for these property changes have been thoroughly analyzed and discussed in detail. Our calculations, based on density functional theory, reveal that the band gap of tetrahex-GeC2 widens as the surface coverage of H atoms increases. Conversely, the band gap narrows in the case of F adsorption. Additionally, the indirect-direct band gap transition can be triggered through surface functionalization. Such modifications in the electronic band structure are primarily due to the disappearance of the π bond when the C atom is converted from sp2 to sp3 hybridization through the adsorption of surface functionalized species. Furthermore, the results indicate that surface adsorption can regulate the effective mass of carriers, electron affinity, and work function in the 2D tetrahex-GeC2 nanostructure.

Structure prediction in low dimensions: concepts, issues and examples

Structure prediction of stable and metastable polymorphs of chemical systems in low dimensions has become an important field, since materials that are patterned on the nano-scale are of increasing importance in modern technological applications. While many techniques for the prediction of crystalline structures in three dimensions or of small clusters of atoms have been developed over the past three decades, dealing with low-dimensional systems-ideal one-dimensional and two-dimensional systems, quasi-one-dimensional and quasi-two-dimensional systems, as well as low-dimensional composite systems-poses its own challenges that need to be addressed when developing a systematic methodology for the determination of low-dimensional polymorphs that are suitable for practical applications. Quite generally, the search algorithms that had been developed for three-dimensional systems need to be adjusted when being applied to low-dimensional systems with their own specific constraints; in particular, the embedding of the (quasi-)one-dimensional/two-dimensional system in three dimensions and the influence of stabilizing substrates need to be taken into account, both on a technical and a conceptual level. This article is part of a discussion meeting issue 'Supercomputing simulations of advanced materials'.

Two-Dimensional Tetrahex-GeC2: A Material with Tunable Electronic and Optical Properties Combined with Ultrahigh Carrier Mobility

Based on first-principles calculations, we propose a novel two-dimensional (2D) germanium carbide, tetrahex-GeC₂, and determine its electronic and optical properties. Each Ge atom binds to four C atoms, in contrast to the known 2D hexagonal germanium carbides. Monolayer tetrahex-GeC₂ possesses a narrow direct band gap of 0.89 eV, which can be effectively tuned by applying strain and increasing the thickness. Its electron mobility is extraordinarily high (9.5 × 10⁴ cm²/(V s)), about 80 times that of monolayer black phosphorus. The optical absorption coefficient is ∼10⁶ cm^-1 in a wide spectral range from near-infrared to near-ultraviolet, comparable to perovskite solar cell materials. We obtain high cohesive energy (5.50 eV/atom), excellent stability, and small electron/hole effective mass (0.19/0.10 m₀). Tetrahex-GeC₂ turns out to be a very promising semiconductor for nanoelectronic, optoelectronic, and photovoltaic applications.

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.